CN102969307B - Light emitting diode structure and manufacturing method thereof - Google Patents
Light emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN102969307B CN102969307B CN201110296432.8A CN201110296432A CN102969307B CN 102969307 B CN102969307 B CN 102969307B CN 201110296432 A CN201110296432 A CN 201110296432A CN 102969307 B CN102969307 B CN 102969307B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000010276 construction Methods 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 7
- 230000002262 irrigation Effects 0.000 description 3
- 238000003973 irrigation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
Abstract
The invention relates to a light emitting diode structure and a manufacturing method thereof, wherein the light emitting diode structure comprises: a light emitting chip and a conductive support. The light emitting wafer is provided with a plurality of light emitting diode units. The conductive bracket is provided with an electric connecting circuit and at least one pair of electrodes electrically connected to the electric connecting circuit, wherein the light-emitting diode units face to the electric connecting circuit and are electrically connected with each other through the electric connecting circuit. The circuit connection relationship among the plurality of light emitting diode units can be achieved through external electric connection circuits, so that the manufacturing process can be simplified, and the yield can be improved.
Description
Technical field
The present invention relates to a kind of photoelectric cell structure and manufacture method thereof, particularly relate to a kind of light emitting diode construction (Light Emitting Diode structure, LED structure) and manufacture method thereof.
Background technology
Along with the technical development of light-emitting diode (Light Emitting Diode, LED), light-emitting diode little by little replaces conventional bulb and is applied to lighting field.Because known light-emitting diode adopts DC powered, so can only be applied to the environment of DC powered; Or, need to use AC-DC power supply transducer and transformer to convert AC mains to low-voltage DC, light-emitting diode can be supplied to and use.
But general commercially available electricity consumption is the alternating current of 110V/220V, therefore, the galvanic light-emitting diode of known employing also exists inconvenient problem with use.Hold above-mentioned, had researcher to develop alternating-current light emitting diode (AC LED) or high-voltage LED (HV LED), alternating-current light emitting diode is without the need to extra transformer, rectifier or drive circuit, direct use alternating current just can drive alternating-current light emitting diode, and high-voltage LED (HV LED), then need not convert low-voltage DC to, general direct current can be used to drive, reduce the energy loss that transformer produces by this.
Current interchange/high-voltage LED is all on the single-chip that size is quite small, form light emitting diode matrix (LED unit matrix) and intraconnections circuit (metalinterconnection), utilize the multiple light emitting diode of intraconnections circuit serial or parallel connection, with the characteristic making interchange/high-voltage LED possess adjustable-voltage and electric current.But the processing procedure making intraconnections circuit is on a single wafer quite complicated, and make on a single wafer in the manufacturing process of intraconnections circuit, the broken string of intraconnections circuit or the problem of loose contact often can occur.So, can make that the making yield of alternating-current light emitting diode is low and interchange/high-voltage LED easily produces leaky.
Summary of the invention
In view of this, the invention provides a kind of light emitting diode construction, can directly use alternating current or high voltage direct current, there is good making yield and can leaky be reduced.
The invention provides a kind of manufacture method of light emitting diode construction, there is simple processing procedure, good making yield can be reached and can leaky be reduced.
The present invention proposes a kind of light emitting diode construction, comprising: luminescent wafer and conducting bracket.Luminescent wafer has multiple light emitting diode.Conducting bracket have electrical interconnection, be electrically connected at least one pair of electrode of electrical interconnection, wherein, light emitting diode subtend is in electrical interconnection, and light emitting diode is electrically connected to each other via electrical interconnection.
The present invention also proposes a kind of manufacture method of light emitting diode construction, comprises the following steps.One luminescent wafer is provided, luminescent wafer is formed with multiple light emitting diode.One conducting bracket is provided, conducting bracket have an electrical interconnection, be electrically connected at least one pair of electrode of electrical interconnection.In conjunction with luminescent wafer and conducting bracket, wherein, light emitting diode subtend is in electrical interconnection, and light emitting diode is electrically connected to each other via electrical interconnection.
In one embodiment of this invention, above-mentioned electrical interconnection comprises: connection wire road and outer connection line.Connection wire road corresponds to light emitting diode and arranges, and by connection wire road, light emitting diode is electrically connected to each other.Outer connection line is arranged at the outside on connection wire road, is electrically connected connection wire road and this is to electrode by outer connection line.
In one embodiment of this invention, above-mentioned light emitting diode has n × m and with n × m arrayed on luminescent wafer, by electrical interconnection, to make in said n row, m the light emitting diode of every a line be one another in series into a light emitting diode group, and become n light emitting diode group, and be connected in parallel to each other between described n light emitting diode group, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
In one embodiment of this invention, above-mentioned light emitting diode has n × m and with n × m arrayed on luminescent wafer, by this electrical interconnection, to make in said n row, m the light emitting diode of every a line be one another in series into a light emitting diode group, and become n light emitting diode group, and be one another in series between described n light emitting diode group, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
In one embodiment of this invention, above-mentioned electrical interconnection is this same electric bridge of favour (Wheatstone bridge), and light emitting diode is electrically connected to each other.
In one embodiment of this invention, above-mentioned light emitting diode construction also comprises: an insulating unit, and be arranged on luminescent wafer, insulating unit separates light emitting diode, and light emitting diode is electrically insulated each other.
In one embodiment of this invention, a part for above-mentioned light emitting diode embeds in the electrical interconnection of conducting bracket.
In one embodiment of this invention, each above-mentioned light emitting diode comprises: the first contact and the second contact, makes light emitting diode be electrically connected to electrical interconnection via the first contact and the second contact.
In one embodiment of this invention, above-mentioned light emitting diode construction is crystal-coated light-emitting diodes structure, luminescent wafer and conducting bracket have upper surface and lower surface separately, and light emitting diode is arranged at the lower surface of luminescent wafer, and electrical interconnection is arranged at the upper surface of conducting bracket.
In one embodiment of this invention, above-mentioned light emitting diode construction also comprises: external electronic, and light emitting diode construction is connected to external electronic via this to electrode.
In one embodiment of this invention, above-mentioned light emitting diode construction also comprises: conducting element, is arranged between light emitting diode and electrical interconnection.
Based on above-mentioned, electrical interconnection is produced on outside conducting bracket by light emitting diode construction of the present invention, and the electrical interconnection of utilization outside carrys out the multiple light emitting diodes on series, parallel luminescent wafer.Therefore, without the need to making electrical interconnection (intraconnections processing procedure) simultaneously in the processing procedure of luminescent wafer, and the processing procedure of luminescent wafer can be simplified.In addition, replace interconnector with the electrical interconnection that outside makes, not easily have the phenomenon of broken string, so the electrical leakage problems of light emitting diode construction effectively can be solved.Moreover, adopt above-mentioned light emitting diode construction, predetermined voltage required for client or electric current can carry out the design of electrical interconnection, so identical luminescent wafer can be made in conjunction with after different conducting brackets, namely can have different predetermined voltages or electric current.Therefore, above-mentioned light emitting diode construction can reach very good product compatibility.
For the above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate institute's accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the perspective exploded view of a kind of light emitting diode construction of present pre-ferred embodiments.
Fig. 2 is the schematic perspective view of a kind of luminescent wafer of present pre-ferred embodiments, also shows the elevational schematic view of luminescent wafer in Fig. 2.
Fig. 3 is the arrangement schematic diagram of multiple light emitting diodes of a kind of luminescent wafer of present pre-ferred embodiments.
Fig. 4 is the cross-sectional view of light-emitting diode, can see the electric connection mode of two light emitting diodes and light emitting diode be electrically insulated each other and conducting bracket from Fig. 4.
Fig. 5 A is the schematic perspective view of a kind of conducting bracket of present pre-ferred embodiments, also shows the schematic top plan view of conducting bracket in Fig. 5 A.
Fig. 5 B is the schematic top plan view of the another kind of conducting bracket of present pre-ferred embodiments.
Fig. 6 is the flow chart of steps of the manufacture method of a kind of light emitting diode construction of present pre-ferred embodiments.
Main element symbol description:
100: light emitting diode construction
110: luminescent wafer
112: light emitting diode
112a: the first contact
112b: the second contact
112c: the first type doping semiconductor layer
112d: Second-Type doping semiconductor layer
112e: luminescent layer
112G: light emitting diode group
114: insulating unit
120: conducting bracket
122: electrical interconnection
122a: connection wire road
122b: outer connection line
130: conducting element
140: external electronic
124a, 124b: electrode
200: the manufacture method of light emitting diode construction
LS: lower surface
R: sunk area
S: non-semiconductor substrate
S210 ~ S230: step
US: upper surface
Embodiment
Light emitting diode construction Fig. 1 is the perspective exploded view of a kind of light emitting diode construction of present pre-ferred embodiments.Please refer to Fig. 1, light emitting diode construction 100 comprises: luminescent wafer 110 and conducting bracket 120.Luminescent wafer 110 has multiple light emitting diode 112 (showing four in Fig. 1).Conducting bracket 120 have electrical interconnection 122, be electrically connected at least one pair of electrode 124a, 124b of electrical interconnection 122.Light emitting diode 112 subtend is in electrical interconnection 122, and light emitting diode 112 is electrically connected to each other via electrical interconnection 122.
Please refer to Fig. 1, light emitting diode construction 100 can be crystal covering type (flip-chip) light emitting diode construction, luminescent wafer 110 and conducting bracket 120 have upper surface US and lower surface LS separately, light emitting diode 112 is arranged at the lower surface LS of luminescent wafer 110, and electrical interconnection 122 is arranged at the upper surface US of conducting bracket 120.By the design of crystal-coated light-emitting diodes structure, can more easily in conjunction with luminescent wafer 110 and conducting bracket 120.But light emitting diode construction 100 is not limited to crystal-coated light-emitting diodes structure, also can be utilize routing to engage the mode of (wire bonding) to be electrically connected luminescent wafer 110 and conducting bracket.
In addition, a part for light emitting diode 112 can embed in the electrical interconnection 122 of conducting bracket 120.Specifically, please refer to Fig. 1, conducting bracket 120 can have multiple sunk area R, and each sunk area R is each light emitting diode 112 corresponding respectively, and electrical interconnection 122 is arranged in sunk area R.Because a part for each light emitting diode 112 can embed in sunk area R, so can easily carry out aiming at and combination between luminescent wafer 110 with conducting bracket 120, and the thickness of light emitting diode construction 100 entirety can be reduced.
Light emitting diode construction 100 as shown in Figure 1, electrical connection (as series, parallel and combination thereof) between multiple light emitting diodes 112 on luminescent wafer 110 is reached by the electrical interconnection 122 of the conducting bracket 120 of outside, and luminescent wafer 110 does not make electrical interconnection.By this, according to the required predetermined voltage of client or electric current, the conducting bracket 120 of outside can arrange predetermined electrical interconnection 122 in advance.Result is, after in conjunction with luminescent wafer 110 and conducting bracket 120, multiple light emitting diode 112 can be one another in series according to the predetermined electrical connection of electrical interconnection 122, parallel connection, makes light emitting diode construction 100 obtain above-mentioned predetermined voltage or electric current.Such light emitting diode construction 100 has preferably product compatibility, that is, utilize luminescent wafer 110 to arrange in pairs or groups and there is the conducting bracket 120 of required electrical interconnection 122, required predetermined voltage or electric current can be obtained.
In addition, because electrical interconnection 122 is produced on outside conducting bracket 120, so without the need to making electrical interconnection (intraconnections processing procedure) simultaneously in the processing procedure of luminescent wafer 110, therefore, it is possible to simplify the processing procedure of luminescent wafer 110.In addition, electrical interconnection 122 is produced on outside conducting bracket 120, in the process made, not easily produces broken string, thus, effectively can solve the leaky of known alternating-current light emitting diode, and the making yield of light emitting diode construction 100 can be promoted.Below, continue referring to Fig. 2 ~ Fig. 4, illustrate the various examples of above-mentioned luminescent wafer 110.
Fig. 2 is the schematic perspective view of a kind of luminescent wafer of present pre-ferred embodiments, also shows the elevational schematic view of luminescent wafer in Fig. 2.Please refer to Fig. 2, luminescent wafer 110 has display four light emitting diodes 112 in multiple light emitting diode 112, Fig. 2, but is not limited to this.The quantity of light emitting diode 112 can need according to design and adjust.
Light emitting diode construction 100 can comprise: insulating unit 114, is arranged on luminescent wafer 110.Insulating unit 114 separates multiple light emitting diode 112, makes to be electrically insulated each other between light emitting diode 112.Insulating unit 114 is such as the crosswise irrigation canals and ditches be arranged between light emitting diode 112.
Each light emitting diode 112 can comprise: the first contact 112a and the second contact 112b, makes light emitting diode 112 be electrically connected to electrical interconnection 122 (can simultaneously with reference to Fig. 1) via the first contact 112a and the second contact 112b.First contact 112 and the second contact 112b can be embedded in sunk area R, to be electrically connected with electrical interconnection 122.
Fig. 3 is the arrangement schematic diagram of multiple light emitting diodes of a kind of luminescent wafer of present pre-ferred embodiments.Please refer to Fig. 3, light emitting diode 112 has n × m and with n × m arrayed on luminescent wafer 110.By electrical interconnection 122 as shown in Figure 1, to make in said n row, m the light emitting diode 112 of every a line be one another in series into a light emitting diode group 112G, and become n light emitting diode group 112G, and be connected in parallel to each other between described n light emitting diode group 112G, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
For example, when n equals 2 and m equals 2 (n equals m), luminescent wafer 110 there are 4 light emitting diodes 112 and light emitting diode 112 with 2 × 2 arrayed on luminescent wafer 110.By electrical interconnection 122 as shown in Figure 1, to make in above-mentioned two row, two light emitting diodes 112 of every a line are one another in series into a light emitting diode group 112G, and become two light emitting diode group 112G, and be connected in parallel to each other between described two light emitting diode group 112G.
In another example, when n equal 2, m equal 3 time (n is not equal to m), and luminescent wafer 110 has 6 light emitting diodes 112, and light emitting diode 112 with 2 × 3 arrayed on luminescent wafer 110.By electrical interconnection 122 as shown in Figure 1, to make in above-mentioned two row, three light emitting diodes 112 of every a line are one another in series into a light emitting diode group 112G, and become two light emitting diode group 112G, and be connected in parallel to each other between described two light emitting diode group 112G.Above-mentioned n, m can need to select according to actual design, are not limited at this.
Fig. 4 is the cross-sectional view of luminescent wafer, can see the electric connection mode of two light emitting diodes and light emitting diode be electrically insulated each other and conducting bracket from Fig. 4.Please refer to Fig. 4, luminescent wafer 110 is such as produce multiple light emitting diode 112 (showing two in Fig. 4) at the upper utilization of non-semiconductor substrate S (such as sapphire substrate) brilliant processing procedure of heap of stone.Insulating unit 114 (such as irrigation canals and ditches) is utilized to make to be electrically insulated each other between light emitting diode 112.
It should be noted that each light emitting diode 112 can comprise: the first contact 112a, the second contact 112b, the first type doping semiconductor layer 112c (such as N-shaped doping semiconductor layer), Second-Type doping semiconductor layer 112d (such as P type doping semiconductor layer), luminescent layer 112e.First type doping semiconductor layer 112c is configured on non-semiconductor substrate S.Luminescent layer 112e is configured on the first type doping semiconductor layer 112c.Second-Type doping semiconductor layer 112d is configured on luminescent layer 112e.That is luminescent layer 112e is between the first type doping semiconductor layer 112c and Second-Type doping semiconductor layer 112d.First contact 112a is configured on the first type doping semiconductor layer 112c, and is electrically connected with the first type doping semiconductor layer 112c.Second contact 112b is configured on Second-Type doping semiconductor layer 112d, and is electrically connected with Second-Type doping semiconductor layer 112d.
It may be noted that light emitting diode construction 100 also can comprise: conducting element 130, be arranged between light emitting diode 112 and electrical interconnection 122.Conducting element 130 can use elargol, conductive projection, anisotropic conductive etc., be arranged between the first contact 112a and electrical interconnection 122 and between the second contact 112b and electrical interconnection 122, be electrically connected to each other to make light emitting diode 112 and electrical interconnection 122 well.
In addition, referring again to Fig. 4, light emitting diode construction 100 can also comprise: external electronic 140, and light emitting diode construction 100 is connected to external electronic 140 via this to electrode 124a, 124b.This external electronic 140 can be AC power, supplies predetermined voltage to light emitting diode construction 100; Or the circuit of the characteristic electron of further adjustment light emitting diode construction 100; Or control circuit board of light emitting diode construction 100 etc., can need to use suitable external electronic 140 according to design.That is, combine luminescent wafer 110 and can be considered a single unit system with the light emitting diode construction 100 of conducting bracket 120 and be connected to external electronic 140, to carry out further adjustment to light emitting diode construction 100 and to control.
Below, please refer to Fig. 5 A, then illustrate the example of conducting bracket 120.Fig. 5 A is the schematic perspective view of a kind of conducting bracket of present pre-ferred embodiments, also shows the schematic top plan view of conducting bracket in Fig. 5 A.Referring to Fig. 1 and Fig. 5 A, in conducting bracket 120, electrical interconnection 122 can comprise: connection wire road 122a and outer connection line 122b.Connection wire road 122a corresponds to light emitting diode 112 and arranges, and by connection wire road 122a, light emitting diode 112 is electrically connected to each other.Outer connection line 122b is arranged at the outside of connection wire road 122a, is electrically connected connection wire road 122a and this is to electrode 124a, 124b by outer connection line 122b.Can see, in conducting bracket 120, there is criss-cross projection from Fig. 5, to coordinate the insulating unit 114 (criss-cross irrigation canals and ditches) of luminescent wafer 110 further, the good contraposition between conducting bracket 120 and luminescent wafer 110 can be carried out.
Can find out from Fig. 1 and Fig. 5 A, light emitting diode 112 has four, forms 2 × 2 arrayed.Connection wire road 122a can arrange in pairs or groups the first contact 112a and the second contact 112b, two of same a line light emitting diodes 112 is one another in series, and forms two light emitting diode group 112G.Then, outer connection line 122b can make to be connected in parallel to each other between two light emitting diode group 112G, that is, in the embodiment of Fig. 5 A, be carry out electrical connecting luminous diode unit 112 with 2 series connection, 2 parallel electric connection modes.Identical series, parallel mode is described in Fig. 3.
Fig. 5 B is the schematic top plan view of the another kind of conducting bracket of present pre-ferred embodiments.Referring to Fig. 2 and Fig. 5 B, light emitting diode 112 can have n × m and with n × m arrayed on luminescent wafer 110, n, m be greater than 1 natural number, n equals or is not equal to m.In this embodiment, n=2 and m=2.
Can notice, as shown in Figure 5 B, to make in above-mentioned 2 row by electrical interconnection 122,2 light emitting diodes 112 of every a line are one another in series into a light emitting diode group, and become 2 light emitting diode groups, and be one another in series between described 2 light emitting diode groups.That is, in the embodiment of Fig. 5 B, all light emitting diodes 112 can carry out complete in-line electric connection by electrical interconnection 122.
In addition, electrical interconnection 122 also can be designed to Hui Si with electric bridge (not shown), and multiple light emitting diode 112 is electrically connected to each other.The design form of electrical interconnection 122 is not limited, as long as meet required predetermined voltage or electric current to design electric connection mode at this.
In sum, electrical interconnection is produced on outside conducting bracket by light emitting diode construction 100, and the electrical interconnection of utilization outside carrys out the multiple light emitting diodes on series, parallel luminescent wafer.Therefore, it is possible to simplify luminescent wafer processing procedure, solve light emitting diode construction electrical leakage problems and predetermined voltage required for client or electric current can carry out the design of electrical interconnection in advance, very good product compatibility can be reached.
The manufacture method of light emitting diode construction
Fig. 6 is the flow chart of steps of the manufacture method of a kind of light emitting diode construction of present pre-ferred embodiments.Please refer to Fig. 6, the manufacture method 200 of light emitting diode construction comprises step S210 ~ S230, and understands the manufacture method 200 of light emitting diode construction referring to Fig. 1 ~ Fig. 5.
In step S210, provide a luminescent wafer 110, luminescent wafer 110 is formed with multiple light emitting diode 112.In one embodiment, luminescent wafer 110 is such as first formed after insulating unit 114 is separated out multiple region on non-semiconductor substrate S, then utilizes film Shen to amass processing procedure, micro-photographing process etc. to be formed light emitting diode 112 in regional.Each light emitting diode 112 can have: the first contact 112a, the second contact 112b, the first type doping semiconductor layer 112c (such as N-shaped doping semiconductor layer), Second-Type doping semiconductor layer 112d (such as P type doping semiconductor layer), luminescent layer 112e.
In step S220, provide a conducting bracket 120, conducting bracket 120 have an electrical interconnection 122, be electrically connected at least one pair of electrode 124a, 124b of electrical interconnection 122.In one embodiment, can provide a substrate, processing procedure is amassed in recycling film Shen and micro image etching procedure forms electrical interconnection 122 and pair of electrodes 124a, 124b on the substrate, and completes the making of conducting bracket 120.
In step S230, in conjunction with luminescent wafer 110 and conducting bracket 120, wherein, light emitting diode 112 subtend is in electrical interconnection 122, and light emitting diode 112 is electrically connected to each other via electrical interconnection 122.Again above-mentioned in conjunction with luminescent wafer 110 with the process of conducting bracket 120, conducting element 130 (as elargol, conductive projection, anisotropic conductive etc.) can be utilized to guarantee to obtain good electric connection.
Above-mentioned step S210, S220 can exchange order, as long as finally carry out step S230 in conjunction with luminescent wafer 110 and conducting bracket 120.Illustrate as above as the various examples of luminescent wafer 110 with conducting bracket 120, namely do not repeated at this.
In sum, light emitting diode construction of the present invention and manufacture method thereof at least have the following advantages:
Be produced on by electrical interconnection on outside conducting bracket, the electrical interconnection of utilization outside carrys out the multiple light emitting diodes on series, parallel luminescent wafer.Therefore, without the need to making electrical interconnection simultaneously in the processing procedure of luminescent wafer, and the processing procedure of luminescent wafer can be simplified.Further, the electrical interconnection made in outside not easily has the phenomenon of broken string, effectively can solve the electrical leakage problems of light emitting diode construction.Moreover, predetermined voltage required for client or electric current can carry out the design of electrical interconnection in advance, can make luminescent wafer combine needed for conducting bracket and obtain required predetermined voltage or electric current, very good product compatibility can be reached.
Although the present invention discloses as above with embodiment; but it is also not used to limit the present invention, technical staff in any art, without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore the scope that protection scope of the present invention should define with claim is as the criterion.
Claims (22)
1. a light emitting diode construction, is characterized in that, comprising:
One luminescent wafer, has multiple light emitting diode, and each light emitting diode comprises one first contact and one second contact; And
One conducting bracket, have an electrical interconnection, be electrically connected at least one pair of electrode of this electrical interconnection and multiple sunk area;
Wherein, those light emitting diode subtends are in this electrical interconnection, those light emitting diodes are electrically connected to each other via this electrical interconnection, and this first contact of each light emitting diode and this second contact are embedded in this corresponding sunk area.
2. light emitting diode construction according to claim 1, is characterized in that, this electrical interconnection comprises:
One connection wire road, arranges corresponding to those light emitting diodes, by this connection wire road, those light emitting diodes is electrically connected to each other; And
One outer connection line, is arranged at the outside on this connection wire road, is electrically connected this connection wire road and this is to electrode by this outer connection line.
3. light emitting diode construction according to claim 1, is characterized in that, those light emitting diodes have n × m and with n × m arrayed on this luminescent wafer,
By this electrical interconnection, to make in said n row, m the light emitting diode of every a line be one another in series into a light emitting diode group, and become n light emitting diode group, and be connected in parallel to each other between described n light emitting diode group, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
4. light emitting diode construction according to claim 1, is characterized in that, those light emitting diodes have n × m and with n × m arrayed on this luminescent wafer,
By this electrical interconnection, to make in said n row, m the light emitting diode of every a line be one another in series into a light emitting diode group, and become n light emitting diode group, and be one another in series between described n light emitting diode group, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
5. light emitting diode construction according to claim 1, is characterized in that, this electrical interconnection is this same electric bridge of favour, and those light emitting diodes are electrically connected to each other.
6. light emitting diode construction according to claim 1, characterized by further comprising: an insulating unit, and be arranged on this luminescent wafer, this insulating unit separates those light emitting diodes, and those light emitting diodes are electrically insulated each other.
7. light emitting diode construction according to claim 1, is characterized in that, a part for those light emitting diodes embeds in this electrical interconnection of this conducting bracket.
8. light emitting diode construction according to claim 1, is characterized in that, each light emitting diode is electrically connected to this electrical interconnection via this first contact and this second contact.
9. light emitting diode construction according to claim 1, it is characterized in that, this light emitting diode construction is crystal-coated light-emitting diodes structure, this luminescent wafer and this conducting bracket have a upper surface and a lower surface separately, those light emitting diodes are arranged at this lower surface of this luminescent wafer, and this electrical interconnection is arranged at this upper surface of this conducting bracket.
10. light emitting diode construction according to claim 1, characterized by further comprising: an external electronic, and this light emitting diode construction is connected to this external electronic via this to electrode.
11. light emitting diode constructions according to claim 1, characterized by further comprising: a conducting element, are arranged between those light emitting diodes and this electrical interconnection.
The manufacture method of 12. 1 kinds of light emitting diode constructions, is characterized in that, comprising:
There is provided a luminescent wafer, this luminescent wafer is formed with multiple light emitting diode, each light emitting diode comprises one first contact and one second contact;
One conducting bracket is provided, this conducting bracket have an electrical interconnection, be electrically connected at least one pair of electrode of this electrical interconnection and multiple sunk area; And
In conjunction with this luminescent wafer and this conducting bracket, wherein, those light emitting diode subtends are in this electrical interconnection, those light emitting diodes are electrically connected to each other via this electrical interconnection, and this first contact of each light emitting diode and this second contact are embedded in this corresponding sunk area.
The manufacture method of 13. light emitting diode constructions according to claim 12, is characterized in that, this electrical interconnection comprises:
One connection wire road, arranges corresponding to those light emitting diodes, by this connection wire road, those light emitting diodes is electrically connected to each other; And
One outer connection line, is arranged at the outside on this connection wire road, is electrically connected this connection wire road and this is to electrode by this outer connection line.
The manufacture method of 14. light emitting diode constructions according to claim 12, it is characterized in that, those light emitting diodes have n × m and with n × m arrayed on this luminescent wafer, by this electrical interconnection, to make in said n row, m the light emitting diode of every a line be one another in series into a light emitting diode group, and become n light emitting diode group, and be connected in parallel to each other between described n light emitting diode group, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
The manufacture method of 15. light emitting diode constructions according to claim 12, is characterized in that, those light emitting diodes have n × m and with n × m arrayed on this luminescent wafer,
By this electrical interconnection, to make in said n row, m the light emitting diode of every a line be one another in series into a light emitting diode group, and become n light emitting diode group, and be one another in series between described n light emitting diode group, wherein, n, m be greater than 1 natural number, n equals or is not equal to m.
The manufacture method of 16. light emitting diode constructions according to claim 12, is characterized in that, this electrical interconnection is this same electric bridge of favour, and those light emitting diodes are electrically connected to each other.
The manufacture method of 17. light emitting diode constructions according to claim 12, characterized by further comprising: an insulating unit is provided, be arranged on this luminescent wafer, this insulating unit separates those light emitting diodes, and those light emitting diodes are electrically insulated each other.
The manufacture method of 18. light emitting diode constructions according to claim 12, is characterized in that, a part for those light emitting diodes embeds in this electrical interconnection of this conducting bracket.
The manufacture method of 19. light emitting diode constructions according to claim 12, is characterized in that, each light emitting diode is electrically connected to this electrical interconnection via this first contact and this second contact.
The manufacture method of 20. light emitting diode constructions according to claim 12, it is characterized in that, this light emitting diode construction is crystal-coated light-emitting diodes structure, this luminescent wafer and this conducting bracket have a upper surface and a lower surface separately, those light emitting diodes are arranged at this lower surface of this luminescent wafer, and this electrical interconnection is arranged at this upper surface of this conducting bracket.
The manufacture method of 21. light emitting diode constructions according to claim 12, characterized by further comprising: provide an external electronic, and this light emitting diode construction is connected to this external electronic via this to electrode.
The manufacture method of 22. light emitting diode constructions according to claim 12, characterized by further comprising: provide a conducting element, is arranged between those light emitting diodes and this electrical interconnection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510588755.2A CN105280629A (en) | 2011-08-29 | 2011-10-08 | Light emitting diode structure |
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| TW100130919A TWI484672B (en) | 2011-08-29 | 2011-08-29 | Light emitting diode structure and fabricating method thereof |
| TW100130919 | 2011-08-29 |
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| TW201508953A (en) * | 2013-08-29 | 2015-03-01 | Lextar Electronics Corp | Light emitting diode, manufacturing method thereof, light emitting diode module using the same, and package method thereof |
| CN106328636A (en) * | 2016-10-12 | 2017-01-11 | 聚灿光电科技股份有限公司 | Integrated LED device and preparing method thereof |
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| CN1399352A (en) * | 2001-07-23 | 2003-02-26 | 连勇科技股份有限公司 | Light-emitting semiconductor device capable of being surface mounted and with composite packing structure |
| CN101048880A (en) * | 2004-10-25 | 2007-10-03 | 克里公司 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
| CN100487932C (en) * | 2004-12-14 | 2009-05-13 | 首尔Opto仪器股份有限公司 | Light emitting device with multiple light emitting units and package for mounting the same light emitting device |
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| US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
| TW535307B (en) * | 2002-03-04 | 2003-06-01 | United Epitaxy Co Ltd | Package of light emitting diode with protective diode |
| US6841802B2 (en) * | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| US20040211972A1 (en) * | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
| TW200520113A (en) * | 2003-12-08 | 2005-06-16 | Mei-Hung Hsu | Wafer-level flip-chip encapsulation technology for light-emitting diode |
| US7488086B2 (en) * | 2006-04-05 | 2009-02-10 | Leotek Electronics Corporation | Retrofitting of fluorescent tubes with light-emitting diode (LED) modules for various signs and lighting applications |
| KR101365621B1 (en) * | 2007-09-04 | 2014-02-24 | 서울반도체 주식회사 | Light emitting diode package having heat dissipating slugs |
| TWI527261B (en) * | 2009-09-11 | 2016-03-21 | 晶元光電股份有限公司 | Light-emitting device |
| TWM404495U (en) * | 2010-10-29 | 2011-05-21 | Lumenmax Optoelectronics Co Ltd | LED frame structure |
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|---|---|---|---|---|
| CN1399352A (en) * | 2001-07-23 | 2003-02-26 | 连勇科技股份有限公司 | Light-emitting semiconductor device capable of being surface mounted and with composite packing structure |
| CN101048880A (en) * | 2004-10-25 | 2007-10-03 | 克里公司 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
| CN100487932C (en) * | 2004-12-14 | 2009-05-13 | 首尔Opto仪器股份有限公司 | Light emitting device with multiple light emitting units and package for mounting the same light emitting device |
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| Publication number | Publication date |
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| CN105280629A (en) | 2016-01-27 |
| CN102969307A (en) | 2013-03-13 |
| TWI484672B (en) | 2015-05-11 |
| TW201310730A (en) | 2013-03-01 |
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