CN101211957B - Alternating current illuminating device and method for making the same - Google Patents
Alternating current illuminating device and method for making the same Download PDFInfo
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- CN101211957B CN101211957B CN2006101565902A CN200610156590A CN101211957B CN 101211957 B CN101211957 B CN 101211957B CN 2006101565902 A CN2006101565902 A CN 2006101565902A CN 200610156590 A CN200610156590 A CN 200610156590A CN 101211957 B CN101211957 B CN 101211957B
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Abstract
The invention provides an alternating current luminescent device, which includes a substrate, a plurality of micro-tube-core luminescent elements formed on the substrate, a special part of rectification elements formed on the surface of parts of the micro-tube-core luminescent elements, rectification units which are formed on the special part of the rectification elements and process the rectification elements with at least four Wheatstone bridges configured by a circuit structure as well as a conductive structure electrically connected with the rectification elements and the micro-tube-core luminescent elements. Through the design that the rectification units are formed on the special part of the rectification elements, the rectification elements present higher bearing capability of reverse bias-voltage and relatively lower voltage value of positive bias starting. Besides, the invention also provides a method for manufacturing the alternating current luminescent device.
Description
Technical field
The present invention relates to light-emitting device, relate in particular to a kind of alternating current illuminating device and method for making thereof.
Background technology
Along with the continuous development of photoelectricity science and technology, (LightEmitting Diode LED) has been widely used in various fields, and occupies critical role in opto-electronics to belong to the light-emitting diode of one of light emitting source.Tradition led chip (chip) drives with DC power supply, must add when in based on the general living environment of alternating current, using exchange the control circuit that changes direct current and voltage drop element can normal running, so not only increase manufacturing cost, operating efficiency also decreases, and the led chip of therefore developing the alternating current direct control truly has its necessity.Since two thousand five, U.S., Japan and Korea S., medium state have manufacturer to deliver LED (AC LED) chip with the alternating current direct control successively, it serves to show that AC LED has been regarded as having the new-type element of potentiality.
At United States Patent (USP) US 6,547, No. 249 cases and US 6,957, in No. 899 cases and No. 093126201 case of Taiwan patent application, all be set forth in and connect many microminiaturization LED core in the one chip so that this chip can reach the purpose of direct control under the high-voltage alternating electrical environment, wherein similar design includes at least one group of interchange microtubule core LED module and is formed on the chip, and this interchange microtubule core LED module comprises two mutual electrically connects of microtubule core LED at least, and is luminous in turn applying mode that each microtubule core under the situation of alternating current then links according to circuit.Though this kind LED tube core can normal running under the alternating current environment, but because the design of itself makes that each microtubule core only can be luminous in two/one-period, therefore each moment all only has the tube core of half to be in the operating state of forward bias under the alternating current environment, will cause the waste of light-emitting area.
For improving above-mentioned shortcoming, with Wheatstone bridge (Wheatstone Bridge) is that the AC LED design concept of equivalent electric circuit is suggested, its mainly be the luminous die module is placed the constant zone of rectification after-current direction so that luminous die no matter why the ac bias direction all can be luminous, yet this kind designing institute produce another problem be as directly with light-emitting diode microtubule core as rectifier cell, then can need the usefulness of a large amount of light-emitting diode microtubule cores, therefore also can cause the waste of die surfaces area because the reversed bias voltage holding capacity of light-emitting diode is not good as rectification.
Therefore, how effectively to solve the disappearance of above-mentioned prior art, directly to make the rectifier cell that possesses high reversed bias voltage holding capacity and low forward cut-in voltage, real for needing the problem of solution at present badly in the LED die surfaces.
Summary of the invention
The shortcoming of background technology in view of the above, a purpose of the present invention provides a kind of alternating current illuminating device and method for making thereof, to promote high reverse biased ability to bear.
Another purpose of the present invention provides a kind of alternating current illuminating device and method for making thereof, to promote the utilance of unit are.
Another object of the present invention provides a kind of alternating current illuminating device and method for making thereof of tool wheatstone bridge circuits structure.
For taking off purpose and other purposes on reaching, the invention provides a kind of alternating current illuminating device, comprise at least: base material; A plurality of microtubule core light-emitting components are formed on this base material, and each microtubule core light-emitting component has an active layer and conducting terminal at least; Rectifier cell special use portion is formed at the surface of part microtubule core light-emitting component; Rectification unit is formed in this rectifier cell special use portion, has at least four rectifier cells according to the wheatstone bridge circuits structural arrangements, and the output DC signal is to this microtubule core light-emitting component respectively in order to rectified action to be provided; And conductive structure, electrically connect respectively this rectifier cell and microtubule core light-emitting component.
In the aforesaid alternating current illuminating device, this base material can be a wafer or an insulated substrate; This active layer can be a luminescence activity layer; The conducting terminal of this microtubule core light-emitting component can be Ohmic electrode.This rectifier cell special use portion can be the rectifier cell special layer that wherein a kind of mode of adopting epitaxial growth (epitaxy growth) and deposition is made, and preferably, this rectifier cell special layer is the structure that semi-conducting material AlGaN forms.This rectifier cell special use portion can be and adopts the impurity mode to be made in rectifier cell reserved area on this base material, and preferably, this impurity is N type impurity, and should the zone injects with ion or diffusion way is made.
In a preferred embodiment, respectively this microtubule core light-emitting component can be arranged, respectively this microtubule core light-emitting component can be according to the demand of monochromatic light or mixed light series, parallel or polyphone and in parallel mutually, simultaneously, respectively this microtubule core light-emitting component can have identical wavelength or different wavelength, thereby selects right quantity on demand and change the mixed light effect.In another preferred embodiment, this microtubule core light-emitting component can comprise resilient coating, N type semiconductor, active layer and P type semiconductor.This conductive structure can be and is selected from that conduction is built bridge, routing metal and have one of them of transparent metal oxide layer of conductive capability; And this rectifier cell can be Schottky diode (Schottkydiode).
For reaching purpose as hereinbefore, the present invention also provides two kinds of AC illuminator method for makings.
First kind of method for making comprises at least: a base material is provided; On this base material, form a plurality of microtubule core light-emitting components that have one deck active layer at least; Surface in part microtubule core light-emitting component forms the rectifier cell special layer; Form rectification unit on this rectifier cell special layer, this rectification unit has at least four rectifier cells according to the wheatstone bridge circuits structural arrangements; Etched trench is so that respectively this microtubule core light-emitting component and rectifier cell mutually insulated; On the surface of this microtubule core light-emitting component respectively, form conducting terminal; And form to electrically connect the respectively conductive structure of the conducting terminal of this rectifier cell and microtubule core light-emitting component.
In the aforementioned method for making, can after defining the rectifier cell zone, this rectifier cell special layer surface form rectification unit with etching mode more in advance, the follow-up residual fraction of removing this rectifier cell special layer fully.In addition, can be in advance coat a protective layer prior to the outer rim of this microtubule core light-emitting component respectively, remove partial protection layer again and form a plurality of conducting terminals to pass this protective layer, wherein, the material of this protective layer can be for example SiO
xOr SiN
xDielectric material.
Second kind of method for making comprises at least: a base material is provided; On this base material, form a plurality of microtubule core light-emitting components that have one deck active layer at least; In the surface doping impurity of part microtubule core light-emitting component, form the rectifier cell reserved area by the doping content that reduces surface impurity; Form rectification unit on this rectifier cell reserved area, this rectification unit has at least four rectifier cells according to the wheatstone bridge circuits structural arrangements; Etched trench is so that respectively this microtubule core light-emitting component and rectifier cell mutually insulated; On the surface of this microtubule core light-emitting component respectively, form conducting terminal; And form to electrically connect the respectively conductive structure of the conducting terminal of this rectifier cell and microtubule core light-emitting component.Similarly, can after going out the rectifier cell zone, this rectifier cell exclusive district predefine form rectification unit with etching mode more in advance.
Because alternating current illuminating device of the present invention and method for making thereof mainly are that rectification unit is made in according in the rectifier cell special use portion, and this rectifier cell special use portion is with epitaxial growth, deposition, modes such as diffusion or injection are made on the base material, therefore this rectifier cell will have higher reversed bias voltage ability to bear and lower positively biased cut-in voltage value, can reduce the rectifier cell use amount in the rectification unit thus, to save more spaces for the configuration area that increases microtubule core light-emitting component, to promote the utilance of unit are, reach the purpose that increases whole lighting efficiency, thereby it is good and need the disappearance of a large amount of light-emitting diode microtubule cores as rectification to overcome the reversed bias voltage holding capacity of existing light-emitting diode.
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.The present invention also can be implemented or be used by other different specific embodiments, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications and change under the spirit of the present invention not deviating from.
Description of drawings
Figure 1A and 1B show respectively in the alternating current illuminating device of the present invention, are positioned at the rectifier cell special layer of active layer top or the material structure end view in zone;
Fig. 2 A and 2B show respectively in the alternating current illuminating device of the present invention, are the detailed tube core structure end view of rectifier cell and microtubule core light-emitting component;
Fig. 3 A and 3B are alternating current illuminating device schematic equivalent circuit of the present invention; And
Fig. 4 A and 4B are the plan structure schematic diagram of each arrangements of components in the alternating current illuminating device of the present invention.
The main element symbol description
10 chips
11 resilient coatings
12 N type semiconductors
13 active layers
14 P type semiconductors
15 rectifier cell special layer
16 base materials
17 concentration doped regions
20 alternating current illuminating devices
20a, 20b microtubule core light-emitting component
The 20c rectifier cell
201a, 201b Ohmic electrode
202a, 202b Ohmic electrode
203a, 203b valve electrode
23a, 23b conductive structure
31a, 31b, 31c, 31d rectifier cell
32a, 32b microtubule core light emitting module
41a, 41b, 41c, 41d rectifier cell
42 microtubule core light-emitting components
43,44 routing metal levels
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.
It for example is the AC illuminator of base material with the wafer that the present invention discloses a kind of being applicable to, the alternating current (AC power) of this AC illuminator through adding produces monochromatic source with for example Wheatstone bridge rectification rear drive microtubule core light-emitting component or nonmonochromatic source utilizes for the user, and this monochromatic source or nonmonochromatic source are the light output surfaces that finds expression in this chip with full-time luminous state.The preferred implementation of this alternating current is general civil power, and according to the electrical standard of various countries, its voltage is 110V (volt), 100V or 220V, and frequency is 60Hz (hertz) or 50Hz.
Consult Figure 1A to 4B, show the embodiment schematic diagram of relevant alternating current illuminating device of the present invention and method for making thereof respectively.
The invention provides a kind of alternating current illuminating device, comprise at least: base material 16; A plurality of microtubule core light- emitting component 20a, 20b are formed on this base material 16, and each microtubule core light-emitting component has an active layer 13 and a conducting terminal at least; Rectifier cell special use portion is formed at the surface of part microtubule core light-emitting component; Rectification unit is formed in this rectifier cell special use portion, has at least four rectifier cell 20c according to the wheatstone bridge circuits structural arrangements, and the output DC signal is to respectively this microtubule core light- emitting component 20a, 20b in order to rectified action to be provided; And conductive structure 23a, 23b, electrically connect respectively this rectifier cell 20c and microtubule core light- emitting component 20a, 20b.
This base material 16 can be a wafer or an insulated substrate; This active layer 13 can be a luminescence activity layer; The conducting terminal of this microtubule core light- emitting component 20a, 20b can be Ohmic electrode 201a, 201b, 202a, 202b.This rectifier cell special use portion can be the rectifier cell special layer that wherein a kind of mode of adopting epitaxial growth and deposition is made, the structure that forms as semi-conducting material AlGaN.In addition, this rectifier cell special use portion also can be and adopts ion to inject and wherein a kind of mode impurity of diffusion is made in rectifier cell reserved area 17 on this base material 16, and preferably, this impurity is N type impurity.
Profile as shown in Figure 1A is represented the epitaxial growth structure of the employed microtubule core of alternating current illuminating device of the present invention light-emitting component, directly to make a microtubule core light-emitting component in the epitaxial growth mode in the chip 10 is example, but the present invention is not limited to make in the epitaxial growth mode.The epitaxial growth structure of this chip 10 comprises that at least a base material 16, is formed at the resilient coating 11 on this base material 16, N type semiconductor 12 on resilient coating, active layer 13 on N type semiconductor, P type semiconductor 14 on active layer, and the rectifier cell special layer 15 on P type semiconductor 14.With the GaN based semiconductor is example, and this rectifier cell special layer 15 preferred embodiment is intrinsic semiconductor AlGaN, or also can be the semi-conducting material that other have identical characteristics.These rectifier cell special layer 15 main applications are to provide one to meet the required material of rectifier cell of making rectification unit, so that rectifier cell possesses high reverse breakdown voltage and low forward cut-in voltage.
The preferred implementation of this base material 16 is Al
2O
3, wafer or any insulating material such as GaAs, GaP, SiC.
Figure 1B then is the microtubule core light emitting element configuration of another alternating current illuminating device, and than aforementioned, Figure 1B is that the impurity that utilizes ion injection or diffusion to wait other modes can reduce the diode epitaxial growth sheet surface doping concentration of script chip 10 adds wherein.With general GaN epitaxial growth sheet is example, chip surface is generally the P type and mixes, the present invention proposes with mode doped N-type impurity such as injection or diffusions, as Si, overactivation enters P type GaN film after can make P type and N type doping impurity effect cancel out each other, make the concentration of concentration doped region 17 on chip 10 surfaces can be reduced to the degree that is similar to intrinsic semiconductor, will help the making of rectifier cell.
Fig. 2 A (contiguous microtubule core light emitting element configuration) illustrates this alternating current illuminating device 20 with enlarged drawing, it comprises microtubule core light- emitting component 20a and 20b and rectifier cell 20c, each microtubule core light- emitting component 20a and 20b all have the active layer 13 of one deck at least, wherein, this active layer 13 is a luminescence activity layer, each microtubule core light-emitting component 20a, the 20b surface does not all have rectifier cell special layer 15, and each active layer 13 of this microtubule core light- emitting component 20a and 20b all has each self-corresponding Ohmic electrode 201a, 201b, 202a, 202b, the alternating current that adds is via this Ohmic electrode 201a, 201b, 202a, 202b can make this active layer 13 send light source.
Rectifier cell 20c among Fig. 2 A has one deck active layer 13 at least, and is positioned at active layer 13 tops for the structure of making rectifier cell 15 electrodes, and different modes such as this structure can epitaxial growth, deposition, diffusion or injection are made.This rectifier cell 20c has at least one (Schottky) valve electrode 203a and (ohm) valve electrode 203b, when granting the forward bias of valve electrode 203a one relative Ohmic electrode 203b, electric current will connect the reduction of face potential barrier and can flow through the face of connecing because of metal semiconductor, but when bestowing Ohmic electrode 203b one with respect to valve electrode 203a forward bias, the potential barrier that electric current then connects face because of metal semiconductor increases and can't flow through the face of connecing, to reach the effect of rectification.
Fig. 2 B is another execution mode schematic diagram of the present invention, shown in Fig. 2 A, is disclosed as the rectifier cell 20c design of a tool rectification simultaneously and luminous effect among Fig. 2 B.Rectifier cell 20c among Fig. 2 B has complete microtubule core light emitting element structure and rectifier cell special layer 15 placed on it, (Schottky) valve electrode 203a is made on this rectifier cell special layer 15, and (ohm) valve electrode 203b then is made in N type semiconductor 12 surfaces of this rectifier cell 20c below.Under the situation of positively biased, electric current can flow through the active layer 13 of this rectifier cell 20c and make it luminous, then flows through the purpose that reaches rectification because of rectifier cell 20c can stop electric current when being in anti-inclined to one side situation.This design can the most easy manufacture obtain maximum light-emitting area.
Fig. 3 A is the alternating current light emitting module schematic equivalent circuit of tool rectifier cell, rectifier cell 31a among the figure, 31b, 31c and 31d represent the rectifier cell (20c as the aforementioned) of an aforementioned tubes core pattern formula respectively, and by this rectifier cell 31a respectively, 31b, 31c and 31d are respectively the rectification unit of formation according to the wheatstone bridge circuits structural arrangements, the AC power of input AC electroluminescence module imports microtubule core light emitting module 32a (the microtubule core light-emitting component that comprises right quantity after the rectifier cell 31a of rectification unit rectification, 20a as the aforementioned), after rectifier cell 31d rectification, can make microtubule core light emitting module 32a perseverance be under the positively biased state luminous; In the same manner, after rectifier cell 31c rectification, import microtubule core light emitting module 32a, luminous through microtubule core light emitting module 32a perseverance is under the anti-state partially.
Microtubule core light-emitting component (20a, 20b as the aforementioned) among the microtubule core light emitting module 32a among Fig. 3 A is not limited in single serial connection, as the microtubule core light emitting module 32b in the circuit diagram of Fig. 3 B is double and serial connection, so the microtubule core light-emitting component that employed microtubule core light emitting module 32b can be monochrome or polychrome among the present invention, also can be selected the microtubule core light-emitting component of the identical or different wavelength of right quantity on demand with polyphone and multiple constituting such as in parallel and change the mixed light effect.
Fig. 4 A is in the alternating current illuminating device of the present invention, the wherein schematic top plan view of an embodiment of tool surface Wheatstone bridge, have rectifier cell 41a, 41b, 41c and 41d, alternating current under different bias condition respectively economy-combat line electrode 43 flow into again in each microtubule core light-emitting component 42 after entering the wheatstone bridge circuits structure with 44 (for example (Schottky) valve electrode 203a of Fig. 2 A), so can make each microtubule core light-emitting component 42 perseverance be in environment that positively biased operates to reach the effect of riser wicking surface utilance. Rectifier cell 41a, 41b, 41c, 41d are made in routing electrode 43 and 44 belows respectively among Fig. 4 A, utilize the zone that originally can't use as the light-emitting area (can cooperate be incorporated in Fig. 2 A shown in construct) of rectification purposes to increase this AC illuminator.
Fig. 4 B is an another embodiment of the present invention, what be different from Fig. 4 A is that rectifier cell 41a, 41b, 41c, 41d are combined with microtubule core light-emitting component 42, make rectifier cell 41a, 41b, 41c, 41d itself also have lighting function, with routing electrode 43,44 binding back rectifier cell 41a, 41b, 41c, 41d can be luminous as all the other microtubule core light-emitting components 42 under conducting state, can reach the purpose (can cooperate to be incorporated in shown in Fig. 2 B and construct) that increases this AC illuminator light-emitting area.
Corresponding aforementioned alternating current illuminating device, the present invention also provides two kinds of alternating current illuminating device method for makings.First kind of method for making is relevant with Figure 1A, and a base material 16 is provided, and epitaxial growth forms microtubule core light-emitting component 20a, the 20b that has one deck active layer 13 at least on this base material 16 again, and the back makes rectifier cell special layer 15 in its surface with epitaxial growth or depositional mode; Define rectifier cell 20c and microtubule core light- emitting component 20a, 20b zone in modes such as etchings respectively in die surfaces, and on this rectifier cell special layer 15, forming rectification unit, this rectification unit has at least four rectifier cell 20c according to the wheatstone bridge circuits structural arrangements; Continuing removes the rectifier cell special layer 15 on microtubule core light- emitting component 20a, 20b surface fully; Etch groove with dry ecthing or wet etching mode and make this each microtubule core light- emitting component 20a, 20b and this rectifier cell 20c mutually insulated; Outer rim in this each microtubule core light- emitting component 20a, 20b coats a protective layer, removes partial protection layer again and forms a plurality of conducting terminals to pass this protective layer; And this conducting terminal under this protective layer formed a plurality of conductive structure 23a, 23b; to electrically connect this rectifier cell 20c and this microtubule core light- emitting component 20a, 20b; formation is according to the rectifier cell 20c of wheatstone bridge configuration, and is luminous to carry out for the electric connection that this a plurality of microtubule core light- emitting component 20a, 20b form rectified action in order to the output DC signal.
Second kind of method for making is relevant with Figure 1B, one base material 16 is provided, epitaxial growth forms microtubule core light-emitting component 20a, the 20b that has one deck active layer 13 at least on this base material 16 again, the back is injected with ion in its surface or mode such as diffusion, by reducing the doping content of its surface impurity, make rectifier cell reserved area 17; And on this rectifier cell reserved area 17, forming rectification unit, this rectification unit has at least four rectifier cell 20c according to the wheatstone bridge circuits structural arrangements; Continuous etch groove with dry ecthing or wet etching mode and make this each microtubule core light-emitting component 20a, 20b and this rectifier cell 20c mutually insulated; Outer rim in this each microtubule core light-emitting component 20a, 20b coats a protective layer, removes partial protection layer again and forms a plurality of conducting terminals to pass this protective layer; And this conducting terminal under this protective layer formed a plurality of conductive structure 23a, 23b; to electrically connect this rectifier cell 20c and this microtubule core light-emitting component 20a, 20b; formation is according to the rectifier cell 20c of wheatstone bridge configuration, and is luminous to carry out for the electric connection that this a plurality of microtubule core light-emitting component 20a, 20b form rectified action in order to the output DC signal.
Because alternating current illuminating device of the present invention and method for making thereof mainly are that rectification unit is made in according in the rectifier cell special use portion, and this rectifier cell special use portion is with epitaxial growth, deposition, modes such as diffusion or injection are made on the base material, therefore this rectifier cell will have higher reversed bias voltage ability to bear and lower positively biased cut-in voltage value, can reduce the rectifier cell use amount in the rectification unit thus, to save more spaces for the configuration area that increases microtubule core light-emitting component, to promote the utilance of unit are, reach the purpose that increases whole lighting efficiency, thereby it is good and need the disappearance of a large amount of light-emitting diode microtubule cores as rectification to overcome the reversed bias voltage holding capacity of existing light-emitting diode.
Above-described specific embodiment is only released characteristics of the present invention and effect in order to example, but but not in order to limit practical range of the present invention, do not breaking away under the spirit and technical scope of taking off in the present invention the disclosed content of any utilization and the equivalence finished changes and modify and all still should be the claim of enclosing and contain.
Claims (36)
1. alternating current illuminating device comprises at least:
Base material;
A plurality of microtubule core light-emitting components are formed on this base material, and each microtubule core light-emitting component has an active layer and conducting terminal at least;
Rectifier cell special use portion is formed at the surface of part microtubule core light-emitting component;
Rectification unit is formed in this rectifier cell special use portion, has at least four rectifier cells according to the wheatstone bridge circuits structural arrangements, and the output DC signal is to this microtubule core light-emitting component respectively in order to rectified action to be provided; And
Conductive structure electrically connects respectively this rectifier cell and microtubule core light-emitting component.
2. alternating current illuminating device according to claim 1, wherein, this base material is one of them of wafer and insulated substrate.
3. alternating current illuminating device according to claim 1, wherein, this active layer is a luminescence activity layer.
4. alternating current illuminating device according to claim 1, wherein, this conducting terminal is an Ohmic electrode.
5. alternating current illuminating device according to claim 1, wherein, the rectifier cell special layer that this rectifier cell special use portion makes for the wherein a kind of mode that adopts epitaxial growth and deposition.
6. alternating current illuminating device according to claim 5, wherein, the structure that this rectifier cell special layer forms for semi-conducting material AlGaN.
7. alternating current illuminating device according to claim 1, wherein, wherein a kind of mode impurity that this rectifier cell special use portion injects and spreads for the employing ion is made in the rectifier cell reserved area on this base material.
8. alternating current illuminating device according to claim 7, wherein, this impurity is N type impurity.
9. alternating current illuminating device according to claim 1, wherein, respectively this microtubule core light-emitting component is selected from mutual series, parallel, and series connection and in parallel one of them.
10. alternating current illuminating device according to claim 9, wherein, respectively this microtubule core light-emitting component has one of them that is selected from identical and different wavelength.
11. alternating current illuminating device according to claim 1, wherein, this conductive structure be selected from that conduction is built bridge, routing metal and have one of them of transparent metal oxide layer of conductive capability.
12. alternating current illuminating device according to claim 1, wherein, this microtubule core light-emitting component comprises resilient coating, N type semiconductor, active layer and P type semiconductor.
13. alternating current illuminating device according to claim 1, wherein, respectively this microtubule core light-emitting component is an arranged.
14. alternating current illuminating device according to claim 1, wherein, this rectifier cell is a Schottky diode.
15. the method for making of an alternating current illuminating device comprises at least:
One base material is provided;
On this base material, form a plurality of microtubule core light-emitting components that have one deck active layer at least;
Surface in part microtubule core light-emitting component forms the rectifier cell special layer;
Form rectification unit on this rectifier cell special layer, this rectification unit has at least four rectifier cells according to the wheatstone bridge circuits structural arrangements;
Etched trench is so that respectively this microtubule core light-emitting component and rectifier cell mutually insulated;
On the surface of this microtubule core light-emitting component respectively, form conducting terminal; And
Form to electrically connect the respectively conductive structure of the conducting terminal of this rectifier cell and microtubule core light-emitting component.
16. the method for making of alternating current illuminating device according to claim 15, wherein, after defining the rectifier cell zone, this rectifier cell special layer surface forms rectification unit with etching mode more in advance, the follow-up residual fraction of removing this rectifier cell special layer fully.
17. the method for making of alternating current illuminating device according to claim 15 wherein, in advance coats a protective layer prior to the outer rim of this microtubule core light-emitting component respectively, removes partial protection layer again and forms a plurality of conducting terminals to pass this protective layer.
18. the method for making of alternating current illuminating device according to claim 17, wherein, the material of this protective layer is a dielectric material.
19. the method for making of alternating current illuminating device according to claim 18, wherein, this dielectric material is SiO
xAnd SiN
xOne of them.
20. the method for making of alternating current illuminating device according to claim 15, wherein, this conducting terminal is an Ohmic electrode.
21. the method for making of alternating current illuminating device according to claim 15, wherein, this rectifier cell is a Schottky diode.
22. the method for making of alternating current illuminating device according to claim 15, wherein, this conductive structure be selected from that conduction is built bridge, routing metal and have one of them of transparent metal oxide layer of conductive capability.
23. the method for making of alternating current illuminating device according to claim 15, wherein, the structure that this rectifier cell special layer forms for semi-conducting material AlGaN.
24. the method for making of alternating current illuminating device according to claim 15, wherein, this rectifier cell special layer forms in wherein a kind of mode of epitaxial growth and deposition.
25. the method for making of alternating current illuminating device according to claim 15, wherein, this conducting terminal forms in the evaporation mode.
26. the method for making of an alternating current illuminating device comprises at least:
One base material is provided;
On this base material, form a plurality of microtubule core light-emitting components that have one deck active layer at least;
In the surface doping impurity of part microtubule core light-emitting component, form the rectifier cell reserved area by the doping content that reduces surface impurity;
Form rectification unit on this rectifier cell reserved area, this rectification unit has at least four rectifier cells according to the wheatstone bridge circuits structural arrangements;
Etched trench is so that respectively this microtubule core light-emitting component and rectifier cell mutually insulated;
On the surface of this microtubule core light-emitting component respectively, form conducting terminal; And
Form to electrically connect the respectively conductive structure of the conducting terminal of this rectifier cell and microtubule core light-emitting component.
27. the method for making of alternating current illuminating device according to claim 26 wherein, forms rectification unit with etching mode in advance again after this rectifier cell reserved area defines the rectifier cell zone.
28. the method for making of alternating current illuminating device according to claim 26 wherein, in advance coats a protective layer prior to the outer rim of this microtubule core light-emitting component respectively, removes partial protection layer again and forms a plurality of conducting terminals to pass this protective layer.
29. the method for making of alternating current illuminating device according to claim 28, wherein, the material of this protective layer is a dielectric material.
30. the method for making of alternating current illuminating device according to claim 29, wherein, this dielectric material is SiO
xAnd SiN
xOne of them.
31. the method for making of alternating current illuminating device according to claim 26, wherein, this conducting terminal is an Ohmic electrode.
32. the method for making of alternating current illuminating device according to claim 26, wherein, this rectifier cell is a Schottky diode.
33. the method for making of alternating current illuminating device according to claim 26, wherein, this conductive structure be selected from that conduction is built bridge, routing metal and have one of them of transparent metal oxide layer of conductive capability.
34. the method for making of alternating current illuminating device according to claim 26, wherein, forming the impurity that this rectifier cell reserved area mixed is N type impurity.
35. the method for making of alternating current illuminating device according to claim 26, wherein, this conducting terminal forms in the evaporation mode.
36. the method for making of alternating current illuminating device according to claim 26, wherein, this rectifier cell reserved area forms with wherein a kind of mode impurity of ion injection and diffusion.
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| CN102446948B (en) * | 2010-10-12 | 2014-07-30 | 晶元光电股份有限公司 | Light emitting element |
| TWI451555B (en) | 2010-10-25 | 2014-09-01 | Epistar Corp | A rectifying unit, a light emitting diode device and the combination thereof |
| CN102479796A (en) * | 2010-11-22 | 2012-05-30 | 晶元光电股份有限公司 | Rectifying unit, light emitting diode element and combination of light emitting diode elements |
| CN102110705B (en) * | 2010-12-14 | 2013-03-20 | 武汉迪源光电科技有限公司 | Alternating current light emitting diode |
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| CN1767220A (en) * | 2004-10-27 | 2006-05-03 | 晶元光电股份有限公司 | Light-emitting component with circuit protection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1767220A (en) * | 2004-10-27 | 2006-05-03 | 晶元光电股份有限公司 | Light-emitting component with circuit protection device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337582A (en) * | 2013-06-19 | 2013-10-02 | 深圳市源磊科技有限公司 | LED light source and manufacture method thereof |
| CN103337582B (en) * | 2013-06-19 | 2015-04-22 | 深圳市源磊科技有限公司 | LED light source and manufacture method thereof |
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| CN101211957A (en) | 2008-07-02 |
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