12454¾ 52twf.d〇c/c 九、發明說明： 【發明所屬之技術領域】 錄ir月是有關於—種半導體元件，且特別是有關於 一種發光二極體（LED)。 【先前技術】 發光二極體屬於_種半導體元件，其發光晶片之材 要使用[V族化學元素，如··石粦化鎵（GaP)、砷 化鎵（GaAs)、氮化鎵（GaN)等化合物半導體，其發 ，原理係將電能轉換為光，也就是對化合物半導體施加電 μ ’透過電子與電洞的結合，將過剩的能量以光的形式釋 f而達成發光的效果。由於發光二極體的發光現象不是 藉由加熱，光或放電發光，而是屬於冷性發光，因此發光 一極體的哥命長達十萬小時以上，且無須暖燈時間（idling time)。此外’發光二極體具有反應速度快（約為1〇_9 移)_、體積小、用電省、污染低（不含水銀）、高可靠度、 適合量產等優點，因此其所能應用的領域十分廣泛，例如 需，面速反應的掃描器燈源、液晶顯示器的背光源或前光 源汽車的儀表板照明、交通號誌燈以及一般的照明裝置 等。 習知的發光二極體係以氮化鎵（GaN)為主要材質， 而藉由蠢晶（epitaxy)的方式製作而成。其中，發光二極 體主要包括一基板（substrate )、一半導體層（semi-conductive layer) 、 二外接電極 ，且半導體層内更包括分 別具有N型及P型摻雜的兩束缚層（c〇nfmement layer ) 以及位於兩束缚層間之發光層（aCtive layer)。當對外接 452twf.doc/c J極施加一順向偏壓時，電流會流經半導體層，而在發光 与内產生電子與電洞的結合，進而使得發光層發光。 近年來，隨著發光二極體之發光效率不斷地提昇， ^得發光二極體已有逐漸取代傳統之日光燈與白熱燈泡之 ^勢，而發光二極體的製作也逐漸朝向高功率與大面積的 ^勢發展。然:而，由於習知之大面積發光二極體的電極在 十上並非為一理想的配置，例如兩電極之間的間距不 私，而使得驅動時發光二極體内的電流分佈不均 ，進而導 發光二極體的發光效率不佳。此外，由於驅動時電極附 ^有電流蓬塞（⑽wding effeet)的現象，因此當局部 ^机過大時，便可能導致電極或附近之半導體層受到破 展，而使得發光二極體無法正常運作。 【發明内容】 有鑑於此，本發明的目的就是在提供一種發光二極 體’其係^特殊的電極設計使電流能均勻分佈，並可避 基的現象’因而具有較高的可靠度與較佳的發光 1 in另—目的是在提供—種發光：極體，其係 ϊ路來提供較佳位置之延伸電極，以利於發 光一極體與外界之接合。 -由本ίη—十目的是在提供—種發光二極體，其係 精來串聯或並聯多個發光單元，進而達到 大面和化，並使電流均勻分佈的目的。 其他目的，本發明提出-種發光二極體’ 其例如包括—基板、—第—半導體層、—第二半導體層、 2twf.doc/c 一第一電極以及一第二電極。第一半導體層係配置於基板 上，而第二半導體層係配置於第一半導體層上，其中第二 半導體層係暴露出第一半導體層之一外圍區域，且第二半 導體層與第一半導體層係不同摻雜型態。此外，第二電極 係配置於第二半導體層上，而第一電極係配置於第二半導 體層所暴露之第一半導體層的外圍區域上，並圍繞第二電 極。 基於上述或其他目的，本發明更提出另一種發光二 極體，其例如包括一基板、一第一半導體層、多個第二半 導體層、多個第一電極、多個第二電極、一介電層以及一 重佈線層。第一半導體層係配置於基板上，而第二半導體 層係配置於第一半導體層上，其中第二半導體層係暴露出 第一半導體層的部分區域，且第二半導體層與第一半導體 層係不同摻雜型態。此外，每一第二電極係配置於一第二 半導體層上，而第一電極係配置於第二半導體層所暴露之 第一半導體層的部分區域上，其中每一第一電極係圍繞至 少一第二電極。另外，介電層係配置於基板上，其中介電 層係覆蓋第一半導體層與第二半導體層，且介電層係暴露 出第一電極與第二電極，並使第一電極與第二電極電性絕 緣。重配置線路係配置於介電層上，其中重配置線路係耦 接至第一電極與第二電極，且重配置線路具有一第一延伸 電極以及一第二延伸電極。 基於上述，本發明之發光二極體的第一電極與第二 電極經過特殊設計，以使得電流均勻分佈^並可避免電流 壅塞的現象。此外，本發明之重配置線路可提供較佳位置 124543& 52twf.d〇c/c 以利於發光二極體與外界之接合1可同時 串如或並恥夕個發光單元，以達到大面積化的目的。 為讓本發明之上述和其他目的、特徵、和點处 明顯易11，下文特舉較佳實施例，並配合所 ， 細說明如下。 M A ’作砰 【實施方式】 [第一實施例] 請分別參考圖1A與1B，其中圖1A繪示為本 第例之一種發光二極體的上視示意圖 不為圖1A之A-A，剖面圖。發光二極體1〇〇例如具 基板^02，且基板102上係配置有一第一半導體層了忉以 及一第二半導體層12〇，其中第二半導體層120係配置於 第一半導體層110上，並暴露出第一半導體層11〇'之外圍 區域。此外，第一半導體層110與第二半導體層12〇係不 同型態之摻雜，在一較佳實施例中，第一半導體層11〇與 第二半導體層120例如分別是N型摻雜以及p型摻雜了 在另一較佳實施例中，第一半導體層110與第二半導體層 120例如分別是p型摻雜以及N型摻雜，以於第一半導體 層110與第二半導體層120之間產生一 P-N接合（P_N junction)面。 請再參考圖1A與1B，第二半導體層120上例如配 置有一第二電極140。而第一半導體層110之外圍區域係 配置有一第一電極130，且第一電極130係圍繞第二電极 140。其中，第二電極140的形狀例如是矩形，而第一電 極130例如是對應於第二電極140的一矩形框狀電極。當 1245视 52twf.d〇c/c 130與第二電極M〇施加-順向偏壓時，第- 產生電第 =導體層12G之P_N接合面上便會 一電/同的、、Ό5，並將能量轉為光線射出。 配置承二St明之第一電極1 3〇係圍繞第二電極1 4〇 使佧第一電極130與第二電極14〇之間| ΐ勾並可避免瓣塞的現象。值得-提父的 極140之，第—電極13G更例如可沿第二電 :刚之外圍的輪庸而圍繞第二電極 ==第二電請之間距保持相等，進而 當然，依照本發明之特徵，第二電極140與第 之外彡狀除了可為圖1A断㈣_與矩形框 其他相對以是圓形與圓環、多邊形與多邊形框或 接徂上述’本發明之第—電極與第二電極的配置可 象^使彳!並可避免電_近電流餘的現 碑的制^毛先一極體具有較佳的發光效率。然而，在後 ί載Ξΐ- 二極體通常會再與其他例如散熱片或線 牛接合。因此，為了有助於接合的進行，本發 7 Η Ϊ 之發光二極體的電極上進行重新佈線 :iStri utl0n)的動作，其例如包括微影（她。)、 (wet⑽ing)或乾式綱（⑽你㈣），以 ;較=:)延^ 料請參考圖2A與2B，其中圖从繪示為圖1A之 《先一極體在重新佈線後的上視示意圖，而圖2b緣示為 52twf.d〇c/c 124543& 圖 2A δα a 係❿如、A_A’剖面圖。如圖2A鱼2B所-入不兑 係配置於基板1G2上，所不，介電層⑼ 導體層120，复由人带 |苐一 +導體層110與第二半 二電核140,並使層15G縣露㈣—電極130與第 且介電層150之二二極14〇電性絕緣， 材質，其亦可^夕、氮化石夕等常用之絕緣 咖如）或鑽石作為介類鑽（仙咖_ 上係配置* /Λ，15G之材f。此外，介電層150 此重配ίί:=Τ路 延伸電ΐ=1具有一第一延伸電極162與-第二 ^極164’其中第—延伸電極16 係分別位於基板1()2之相 、弟=電極164 向下耦桩5楚〜 弟一延伸電極162係 接至坌+第一电極〇,而第二延伸電極164係延伸耦 钱至弟二電極140。 本發明之發光二極體在重新佈線之後，可在其相 、隹分別提供—延伸電極，因而有助於後續之接合動作的 :二請芩考圖3,其繪示本發明之發光二極體與散熱裝 ，接&後的示意圖。如圖3所示，發光二極體1〇〇係以覆 晶方式與一金屬散熱片18〇接合，並可透過金 輕接至外界。其中，第—延伸電極162與第二延伸電^ ^ 例如分別藉由銲球170耦接至金屬散熱片18〇，而金屬散 熱片180之材質例如是銅、銀等易於導熱之金屬。由於第 一延伸電極162與第二延伸電極164係位於發光二極體 1〇〇之相對兩側，因此有助於金屬散熱片18〇與發光二極 體100之接合。此外，在本發明之其他實施例中，發光二 極體100更例如可直接與一驅動電路板（未繪示）或其他 2tv，f.doc/c 線路載板（未繪示）接合’其中藉由本發明之重配 160，可對應電路板（未繪示）上之接點來調整第—延伸 電極162與第二延伸電極164至所期望的位置，而 (未繪示）上之線路佈局亦可因第—延伸電極162$ 延伸電極164的調整而更具彈性。 〃 一 基於上述之第一實施例的發光二極體，本發 於同-基板上製作多個發光單元，以得$彳大面積 其處所指的發光單元包括基板上 等元件半¥體層、第—電極以及第二電極 專兀件。此外，精由不同發光單元間之第 極的配置方式，以及重配置線路的佈線設計，更; 具ΐί聯、串聯等不同的耦接關係，以提供多種 第二實施例至第四實施例將分別舉出本 ，月之λ種不_型的大面積發光二極體加 [第二實施例] ，分別參考圖4八與4Β,其中圖4Α緣示為本發明之 積發光二極體的上視示意圖，而圖 2〇2、、曰回二之Μ’剖面圖。發光二極體200之基板 上係配置有一第二半導體層22〇。此外弟第士 23〇¥= ^與第二半導體層220上分別配置有第一電極 一电極240，且每一第—電極230係圍繞一第二 見σ #配f，以構成陣列排列的多個發光單元200a。 著’明分別參考圖5A、5B與6，其中圖5A繪示 .、、、回A之發光二極體在形成重配置線路後的上視示意 124543¾ 5 21 wf.(j〇 c/c 圖二，圖5B繪示為圖5A之B-B，剖面圖，且圖6係繪示 發光單元200a的連接電路示意圖。藉由重配置線路曰26〇 可串聯同一行之發光單元200a，並將每一行之發光單元 2〇〇a並聯，且重配置線路260更延伸一第一延伸電極262 與一第二延伸電極264至基板2〇2的兩侧。 [第三實施例] 々一睛分別參考圖7A與7B，其中圖7A繪示為本發明之 第三實^施例之一種大面積發光二極體的上視示意圖，而圖 7B繪示為圖7A之C_C，剖面圖。發光二極體3〇〇之基板 3〇2上例如形成有多個發光單元3〇〇a，其中每一發光^元 之第一電極33G係相互鄰接，且每一第一電極B0 係圍繞一第二電極340。 、此外，請分別參考圖8A、8B與9，其中圖8A繪示 為圖7A之發光二極體在形成重配置線 :光，Γ示細之c_c，剖面圖， 毛先早=30〇a的連接電路示意圖。其中，每一發光單元 300a之第私極33〇係相互耗接，並藉由重配置線路36〇 ，接至第-延伸電極362。此外，每_發光單元3_之 第-電極34〇係藉由重配置線路·#接至第二延伸電極 364，以使得每一發光單元3〇〇a相互並聯。 [弟四實施例] ，分別芬考圖與10B，其中圖繪示為本發 明之苐四貫施例之—種大面積發光二極體的上視示咅、圖， 而：_繪示為圖之D_D，剖面圖。發光二極體4〇〇 之基板402上例如形成有一第—半導體層41〇，且第一半 1245438, 52twf.doc/c v體層、410上係配置有多個第二半導體層42〇。此外，每 第了半導體層420上係配置有多個第二電極44〇，而第 一半導體層410上之第一電極43〇係圍繞每一第二半導體 層上的第二電極44〇配置，以構成多個發光單元400a。 回請分別參考圖11A、HB與12,其中圖11A繪示為 圖10A之發光二極體在形成重配置線路後的上視示意圖， 而圖jlB繪示為圖11A之D_D，剖面圖，且圖12係繪示 發光單兀40〇a的連接電路示意圖。其中，每一發光單元 400a之第一電極43〇係相互鄰接，並藉由重配置線路4⑼ ^妾至第-延伸電極462，而第二電極物係藉由重配置 :路460雛至第二延伸電極綱，以使得發光 相互並聯。 方綜上所述，本發明之發光二極體至少具有下列特徵 與優點： 、 略六（一）第一電極與第二電極經過特殊設計，以使得 電流能均勻分佈，因此可避免電流壅塞的現象，並可具 軚高的可靠度與較佳的發光效率。 ’、 (二）可藉由重配置線路來提供較佳位置之延 柘，以利於發光二極體與外界之接合。 、（三）可藉由重配置線路串聯或並聯多個發光單元， Q提供不同之輯料，進而制A面積化，並使電流 勻分佈的目的。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明’任何熟習此技藝者，在不麟本發明之料 砷和範圍内’當可作些許之更動與潤飾，因此本發明之^ 12454¾ 52twf.doc/c ，範圍當視後附之中料·騎界定者。 【圖式簡單說明】 + 的卜示為本發明之第一實施例之—種發光二極體 的上視不意圖。 圖1示為圖1A之A-A，剖面圖。 視示=圖示為目1A之發光二極體在麵佈線後的上 圖2B繪示為圖2A的A-A，剖面圖。 的示示為本發明之發光二滅與散熱裝置接合後 二極發明之第二實施例之-種大面積發先 圖4B綠示為圖4A之B-B，剖面圖。 後的為圖4A之發光二極體在形成重配置線路 圖5B繪示為圖5A之B-B，剖面圖。 ^繪示為圖5A之發光單元的連接電路示意圖。 if A繪7^為本發明之第三實關之-種大面積發光 —極體的上視示意圖。 、Ά 圖7Β繪示為圖7Α之C-C，剖面圖。 後的:視 7Α之發光二極體在形成重配置線路 圖8Β緣示為圖8Α之C-C，剖面圖。 圖9係綠示圖8Α之發光單元的連接電路示意圖。 圖10Α緣示為本發明之第四實施例之一種大面積發 lC^452twf.d o c/c 光二極體的上視示意圖。 圖10B繪示為圖10A之D-D’剖面圖。 圖11A繪示為圖10A之發光二極體在形成重配置線 路後的上視示意圖。 圖11B繪示為圖11A之D-D’剖面圖。 圖12繪示為圖11A之發光單元的連接電路示意圖。 【主要元件符號說明】 100 ： 發光二極體 102 ： 基板 110 ： 第一半導體層 120 ： 第二半導體層 130 ： 第一電極 140 ： 第二電極 150 ： 介電層 160 ： 重配置線路 162 ： 第一延伸電極 164 ： 第二延伸電極 170 ： 鲜球 180 ： 金屬散熱片 200 ： 發光二極體 200a :發光單元 202 ： 基板 210 ： 第一半導體層 220 ： 第二半導體層 230 ： 第一電極 1245438 1 3452twf.doc/c 240 :第二電極 260 :重配置線路 262 ··第一延伸電極 264 :第二延伸電極 300 :發光二極體 300a :發光單元 302 :基板 330 :第一電極 340 :第二電極 360 :重配置線路 362 :第一延伸電極 364 :第二延伸電極 400 :發光二極體 400a :發光單元 402 :基板 410 :第一半導體層 420 :第二半導體層 430 ··第一電極 440 :第二電極 460 :重配置線路 462 ··第一延伸電極 464 ··第二延伸電極12454¾ 52twf.d〇c / c IX. Description of the invention: [Technical field to which the invention belongs] The ir month is related to a semiconductor device, and particularly to a light emitting diode (LED). [Previous technology] Light-emitting diodes belong to _ a kind of semiconductor elements, and the materials of their light-emitting wafers must use [V group chemical elements, such as · GaAs, GaAs, and GaN ) And other compound semiconductors, the principle of which is to convert electrical energy into light, that is, to apply electricity μ ′ to the compound semiconductor through the combination of electrons and holes, and release excess energy in the form of light to achieve the effect of light emission. Since the light-emitting phenomenon of the light-emitting diode does not emit light by heating, light or discharge, but belongs to cold light-emitting, the life of the light-emitting diode is more than 100,000 hours, and no idling time is required. In addition, the light-emitting diode has the advantages of fast response speed (about 10-9 shifts), small size, low power consumption, low pollution (non-mercury), high reliability, and suitable for mass production. The application fields are very wide, for example, the scanner light source of surface speed response, the backlight of LCD monitor or the front panel of the car, the traffic light and general lighting devices. The conventional light emitting diode system uses gallium nitride (GaN) as a main material, and is fabricated by an epitaxy method. The light-emitting diode mainly includes a substrate, a semi-conductive layer, and two external electrodes, and the semiconductor layer further includes two tie layers (N) and P-type doped layers (c. nfmement layer) and a light emitting layer (aCtive layer) located between two restraint layers. When a forward bias is applied to the external 452twf.doc / c J pole, a current will flow through the semiconductor layer, and a combination of electrons and holes will be generated in the light-emitting and internal, thereby causing the light-emitting layer to emit light. In recent years, with the continuous improvement of the light emitting efficiency of light emitting diodes, light emitting diodes have gradually replaced the traditional fluorescent lamps and incandescent light bulbs, and the production of light emitting diodes has gradually moved towards high power and high power. The development of the area is trending. However, because the electrodes of the conventional large-area light-emitting diodes are not an ideal configuration at ten, for example, the distance between the two electrodes is not private, so that the current distribution in the light-emitting diodes is uneven during driving. Furthermore, the light emitting efficiency of the light emitting diode is not good. In addition, due to the phenomenon of current flooding during the driving of the electrode, when the local device is too large, the electrode or the nearby semiconductor layer may be damaged, and the light-emitting diode may not operate normally. [Summary of the Invention] In view of this, the object of the present invention is to provide a light-emitting diode 'its special electrode design allows the current to be evenly distributed, and can avoid the phenomenon of radicals'. The best luminescence is 1 in. Another purpose is to provide a kind of luminescence: a polar body, which is a way to provide a better position of the extension electrode to facilitate the bonding of the luminous polar body to the outside world. -The purpose of this article is to provide a kind of light-emitting diode, which is designed to connect multiple light-emitting units in series or in parallel to achieve the purpose of large surface area and uniform current distribution. For other purposes, the present invention proposes a light-emitting diode, which includes, for example, a substrate, a first semiconductor layer, a second semiconductor layer, 2twf.doc / c, a first electrode, and a second electrode. The first semiconductor layer is disposed on the substrate, and the second semiconductor layer is disposed on the first semiconductor layer, wherein the second semiconductor layer exposes a peripheral region of the first semiconductor layer, and the second semiconductor layer and the first semiconductor The layers are differently doped. In addition, the second electrode is disposed on the second semiconductor layer, and the first electrode is disposed on a peripheral region of the first semiconductor layer exposed by the second semiconductor layer, and surrounds the second electrode. Based on the above or other objectives, the present invention further proposes another light emitting diode, which includes, for example, a substrate, a first semiconductor layer, a plurality of second semiconductor layers, a plurality of first electrodes, a plurality of second electrodes, and a dielectric. Electrical layer and a redistribution layer. The first semiconductor layer is disposed on the substrate, and the second semiconductor layer is disposed on the first semiconductor layer. The second semiconductor layer exposes a part of the first semiconductor layer, and the second semiconductor layer and the first semiconductor layer. Different doping patterns. In addition, each second electrode system is disposed on a second semiconductor layer, and the first electrode system is disposed on a partial region of the first semiconductor layer exposed by the second semiconductor layer, wherein each first electrode system surrounds at least one Second electrode. In addition, a dielectric layer is disposed on the substrate, wherein the dielectric layer covers the first semiconductor layer and the second semiconductor layer, and the dielectric layer exposes the first electrode and the second electrode, and the first electrode and the second electrode are exposed. The electrodes are electrically insulated. The reconfiguration circuit is disposed on the dielectric layer, wherein the reconfiguration circuit is coupled to the first electrode and the second electrode, and the reconfiguration circuit has a first extension electrode and a second extension electrode. Based on the above, the first electrode and the second electrode of the light-emitting diode of the present invention are specially designed so that the current is evenly distributed and the phenomenon of current congestion is avoided. In addition, the reconfiguration circuit of the present invention can provide a better position 124543 & 52twf.d0c / c to facilitate the connection of the light-emitting diode and the outside world. 1 can be connected in series or parallel to the light-emitting unit to achieve a large area the goal of. In order to make the above and other objects, features, and points of the present invention significantly easier, the preferred embodiments are described below in conjunction with the detailed description, as follows. MA 'Zoom [Embodiment] [First Example] Please refer to Figs. 1A and 1B, respectively. Fig. 1A shows a schematic diagram of a top view of a light emitting diode of this example, not AA of Fig. 1A. . The light-emitting diode 100 has, for example, a substrate ^ 02, and a first semiconductor layer 忉 and a second semiconductor layer 120 are disposed on the substrate 102. The second semiconductor layer 120 is disposed on the first semiconductor layer 110. And expose a peripheral region of the first semiconductor layer 110 ′. In addition, the first semiconductor layer 110 and the second semiconductor layer 120 are doped in different types. In a preferred embodiment, the first semiconductor layer 110 and the second semiconductor layer 120 are, for example, N-type doped and P-type doped In another preferred embodiment, the first semiconductor layer 110 and the second semiconductor layer 120 are, for example, p-type doped and N-type doped, respectively, for the first semiconductor layer 110 and the second semiconductor layer. A PN junction (P_N junction) plane is generated between 120. Please refer to FIGS. 1A and 1B again. For example, a second electrode 140 is disposed on the second semiconductor layer 120. A first electrode 130 is disposed in a peripheral region of the first semiconductor layer 110, and the first electrode 130 surrounds the second electrode 140. The shape of the second electrode 140 is, for example, rectangular, and the first electrode 130 is, for example, a rectangular frame-shaped electrode corresponding to the second electrode 140. When 1245V 52twf.d0c / c 130 and the second electrode M0 apply a -forward bias voltage, the -th generation of electricity = the conductor layer 12G's P_N junction surface will be electrically / same, Ό5, And turn the energy into light. The configuration of the first electrode 130 of Cheng Erming is to surround the second electrode 1 40 so that the first electrode 130 and the second electrode 14o are hooked and the phenomenon of valve plugging can be avoided. It is worth mentioning that the first electrode 13G can be, for example, along the second electrode: the periphery of the second electrode: around the second electrode == the second electrode, the distance between the two electrodes must be equal, and of course, according to the invention, Characteristic, the second electrode 140 and the first shape may be broken apart from the rectangular frame in FIG. 1A. The other shape is a circle and a ring, a polygon and a polygon frame or connected to the above-mentioned "the first electrode and the first of the present invention". The configuration of the two electrodes can be similar to that of the present invention, and can avoid the electric current and the current of the current monument. The first polar body has better luminous efficiency. However, in the future, the Ξΐ-diode will usually be joined with other components such as heat sinks or wires. Therefore, in order to facilitate the bonding, the electrode of the light-emitting diode of the present invention is rewired: iStriutl0n), which includes, for example, lithography (her.), (Wet⑽ing), or dry type ( ⑽ 你 ㈣), with; ==) extension ^ Please refer to Figures 2A and 2B for details. The figure is shown in Figure 1A as a schematic diagram of the top view of the first polarized body after rewiring, and the edge of Figure 2b is shown as 52twf.doc / c 124543 & Fig. 2A δα a is a cross-sectional view of A, A '. As shown in FIG. 2A and FIG. 2B, the non-enterprise system is arranged on the substrate 1G2. However, the dielectric layer ⑼ conductor layer 120 is brought by a person | 苐 + conductor layer 110 and the second half electric core 140, and Layer 15G county exposed—the electrode 130 is electrically insulated from the first and second dielectric layers 150 and 14 of the dielectric layer 150, and the material can also be commonly used as insulating diamonds such as diamonds, nitrides, etc. or diamonds as dielectric diamonds ( Xianka _ upper system configuration * / Λ, 15G material f. In addition, the dielectric layer 150 is reconfigured ί: = Τ 路 Extended electric power = 1 has a first extension electrode 162 and a second ^ electrode 164 'where The first extension electrode 16 is located on the phase of the substrate 1 () 2, and the brother = electrode 164 is coupled down to 5 chu ~ the brother extension electrode 162 is connected to 坌 + first electrode 0, and the second extension electrode 164 is Extend the coupling to the second electrode 140. After the light-emitting diode of the present invention is rewired, it can be provided separately at its phase and the —-extended electrode, which is helpful for subsequent bonding operations: Please refer to Figure 3, It shows the schematic diagram of the light-emitting diode and the heat-dissipating device of the present invention after being connected. As shown in FIG. 3, the light-emitting diode 100 is heat-dissipated with a metal by a flip-chip method. 180 ° joint, and can be lightly connected to the outside through gold. Among them, the first extension electrode 162 and the second extension electrode ^ ^ are, for example, coupled to the metal heat sink 18 through a solder ball 170, and the material of the metal heat sink 180 For example, metals such as copper and silver that are easy to conduct heat. Since the first extension electrode 162 and the second extension electrode 164 are located on opposite sides of the light emitting diode 100, it is helpful for the metal heat sink 18 and the light emitting diode. The bonding of the body 100. In addition, in other embodiments of the present invention, the light emitting diode 100 can be directly connected to a driving circuit board (not shown) or other 2TV, f.doc / c circuit board (not shown), for example. (Shown) Bonding 'With the reconfiguration 160 of the present invention, the first extension electrode 162 and the second extension electrode 164 can be adjusted to the desired positions corresponding to the contacts on the circuit board (not shown), and (not shown) The layout of the circuit above can also be more flexible due to the adjustment of the first extension electrode 162 $ extension electrode 164. 〃 A light-emitting diode based on the first embodiment described above, the present invention produces multiple light-emitting diodes on the same substrate Unit to get a large area of its location The light-emitting unit includes components such as a substrate, a first electrode, and a second electrode. In addition, the arrangement of the first electrode between different light-emitting units and the wiring design of the reconfiguration circuit are more accurate. , Series, and other different coupling relationships to provide a variety of second embodiment to the fourth embodiment will be listed separately, the λ non-type large area light-emitting diodes plus [second embodiment], respectively Refer to FIGS. 4A and 4B, where FIG. 4A is a schematic top view of a product light emitting diode of the present invention, and FIG. 202 and M ′ cross sections of the light emitting diode 200. On the substrate of the light emitting diode 200 A second semiconductor layer 22 is arranged. In addition, a first electrode and an electrode 240 are arranged on the second semiconductor layer 220 and the second semiconductor layer 220, and each first-electrode 230 is arranged around a second electrode σ # to form an array. A plurality of light emitting units 200a. With reference to Figures 5A, 5B, and 6, respectively, Figure 5A shows the top view of the light-emitting diodes A, B, and A after the reconfiguration circuit is formed. 124543¾ 5 21 wf. (J〇c / c Figure Second, FIG. 5B is a cross-sectional view of BB of FIG. 5A, and FIG. 6 is a schematic diagram of the connection circuit of the light-emitting units 200a. By reconfiguring the circuit, the light-emitting units 200a in the same row can be connected in series, and each row The light-emitting units 2000a are connected in parallel, and the reconfiguration circuit 260 further extends a first extension electrode 262 and a second extension electrode 264 to both sides of the substrate 202. [Third embodiment] 々 Refer to the drawings separately 7A and 7B, wherein FIG. 7A is a schematic top view of a large-area light-emitting diode according to the third embodiment of the present invention, and FIG. 7B is a cross-sectional view taken along C-C of FIG. 7A. The light-emitting diode For example, a plurality of light-emitting units 300a are formed on a 300-dimensional substrate 300. The first electrodes 33G of each light-emitting element are adjacent to each other, and each of the first electrodes B0 surrounds a second electrode 340. In addition, please refer to FIGS. 8A, 8B and 9, respectively, where FIG. 8A shows that the light emitting diode of FIG. 7A is forming a reconfiguration line : Light, Γ shows the detailed c_c, cross-sectional view, Mao Xianzao = 30〇a schematic diagram of the connection circuit. Among them, the third private electrode 33 of each light-emitting unit 300a is connected to each other and is reconfigured by 36. , Connected to the-extension electrode 362. In addition, the-electrode 34 of each light-emitting unit 3_ is connected to the second extension electrode 364 by a reconfiguration line # so that each light-emitting unit 300a mutually In parallel, [fourth embodiment], Fenco chart and 10B, respectively, in which the drawing is shown in the fourth embodiment of the present invention-a large-area light-emitting diode top-view display, figure, and: It is shown as D_D in the figure, and a cross-sectional view. For example, a first semiconductor layer 41 is formed on the substrate 402 of the light emitting diode 400, and a plurality of 1245438, 52twf.doc / cv body layers and a plurality of 410 are arranged on the substrate 402. A second semiconductor layer 42. In addition, a plurality of second electrodes 44o are disposed on each of the first semiconductor layers 420, and a first electrode 43o on the first semiconductor layer 410 surrounds each of the second semiconductor layers. The second electrode 44 is configured to form a plurality of light-emitting units 400a. Please refer to FIGS. 11A, HB, and 12, respectively, of which FIG. 11A 10A is a schematic top view of the light-emitting diode in FIG. 10A after the reconfiguration circuit is formed, and FIG. 9B is a cross-sectional view of D_D in FIG. 11A, and FIG. 12 is a connection circuit of the light-emitting unit 40a The first electrode 43 of each light-emitting unit 400a is adjacent to each other and is reconfigured by wiring 4⑼ ^ 妾 to the first extension electrode 462, and the second electrode object is reconfigured by way of: 460 路 到The second electrode group is extended so that the light emission is parallel to each other. As mentioned above, the light-emitting diode of the present invention has at least the following characteristics and advantages: 1. Slightly six (a) The first electrode and the second electrode are specially designed to The current can be evenly distributed, so the phenomenon of current congestion can be avoided, and high reliability and better luminous efficiency can be achieved. ′, (2) It is possible to provide a better position extension by reconfiguring the circuit, so as to facilitate the connection of the light emitting diode and the outside. (3) Multiple light-emitting units can be connected in series or in parallel by reconfiguring the line, Q provides different materials, and then the area of A is made, and the current is evenly distributed. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. 'Any person skilled in the art, within the arsenic and scope of the present invention', should make some changes and retouching. The invention ^ 12454¾ 52twf.doc / c, the scope of which should be attached to the material and riding definition. [Brief description of the drawings] The illustration of + is the first embodiment of the present invention—a light-emitting diode is not intended to be viewed from above. Fig. 1 is a sectional view taken along A-A of Fig. 1A. Visual display = The picture shows the top of the light-emitting diode of head 1A after surface wiring. Fig. 2B is a cross-sectional view of A-A of Fig. 2A. Shown is the second embodiment of the two-pole invention after the light-emitting two-extinguishing and the heat-dissipating device of the present invention are joined. A large-scale launch is shown in FIG. 4B. The following is the rearrangement of the light-emitting diodes of FIG. 4A. FIG. 5B is a cross-sectional view of B-B of FIG. 5A. ^ Illustrated is a schematic diagram of a connection circuit of the light emitting unit of FIG. 5A. If A draws 7 ^ is a schematic diagram of a third aspect of the present invention-a kind of large-area light-emitting-top view. Figure 7B is a sectional view taken along the line C-C in Figure 7A. The rear: The light-emitting diode of FIG. 7A is forming a reconfiguration circuit. The edge of FIG. 8B is shown as C-C in FIG. 8A, and a sectional view. FIG. 9 is a green schematic diagram of a connection circuit of the light emitting unit of FIG. 8A. Fig. 10A is a schematic top view of a large-area light emitting diode C ^ 452twf.d o c / c light emitting diode according to a fourth embodiment of the present invention. Fig. 10B is a sectional view taken along the line D-D 'in Fig. 10A. FIG. 11A is a schematic top view of the light emitting diode of FIG. 10A after a reconfiguration line is formed. Fig. 11B is a sectional view taken along the line D-D 'of Fig. 11A. FIG. 12 is a schematic diagram of a connection circuit of the light emitting unit of FIG. 11A. [Description of main component symbols] 100: light emitting diode 102: substrate 110: first semiconductor layer 120: second semiconductor layer 130: first electrode 140: second electrode 150: dielectric layer 160: reconfiguration circuit 162: An extension electrode 164: a second extension electrode 170: a fresh ball 180: a metal heat sink 200: a light emitting diode 200a: a light emitting unit 202: a substrate 210: a first semiconductor layer 220: a second semiconductor layer 230: a first electrode 1245438 1 3452twf.doc / c 240: Second electrode 260: Reconfiguration line 262. · First extension electrode 264: Second extension electrode 300: Light-emitting diode 300a: Light-emitting unit 302: Substrate 330: First electrode 340: Second Electrode 360: Reconfiguration line 362: First extension electrode 364: Second extension electrode 400: Light-emitting diode 400a: Light-emitting unit 402: Substrate 410: First semiconductor layer 420: Second semiconductor layer 430 ·· First electrode 440 : Second electrode 460: Reconfiguration line 462 · · First extension electrode 464 · · Second extension electrode