TWI447942B - Method for fabricating an axis-symmetric light emitting diode (led) die - Google Patents
Method for fabricating an axis-symmetric light emitting diode (led) die Download PDFInfo
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- TWI447942B TWI447942B TW097135238A TW97135238A TWI447942B TW I447942 B TWI447942 B TW I447942B TW 097135238 A TW097135238 A TW 097135238A TW 97135238 A TW97135238 A TW 97135238A TW I447942 B TWI447942 B TW I447942B
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Description
本發明係為一種軸對稱發光二極體之製造方法,特別為一種應用於改善具有複數個發光區域之發光二極體光型之軸對稱發光二極體之製造方法。The invention relates to a method for manufacturing an axisymmetric light-emitting diode, in particular to a method for manufacturing an axisymmetric light-emitting diode for improving a light-emitting diode light pattern having a plurality of light-emitting regions.
目前發光二極體之主要發展趨勢為開發高亮度發光二極體,其係藉由將多顆發光二極體單元封裝於同一座體中,用以提高發光二極體之整體亮度。然而於封裝過程中,由於每一發光二極體間距離極小,因此使用銀膠或焊錫將每一發光二極體固定於座體中時,將有可能產生銀膠或焊錫外溢之問題,使得導致發光二極體出現短路現象。因此若可於單一發光二極體晶片上形成複數個發光區域,則將可以避免銀膠或焊錫外溢之問題,並也達到提高亮度之功效。At present, the main development trend of the light-emitting diode is to develop a high-brightness light-emitting diode, which is used to improve the overall brightness of the light-emitting diode by encapsulating a plurality of light-emitting diode units in the same body. However, in the packaging process, since the distance between each of the light-emitting diodes is extremely small, when each of the light-emitting diodes is fixed in the base by using silver glue or solder, there is a possibility that silver glue or solder overflow may occur. This causes a short circuit in the light-emitting diode. Therefore, if a plurality of light-emitting regions can be formed on a single light-emitting diode wafer, the problem of silver glue or solder overflow can be avoided, and the effect of improving brightness can also be achieved.
如美國專利第6,869,812 B1號「高功率氮化鋁銦鎵型多晶片發光二極體」中所揭露一種用以形成一發光二極體晶片之方法,其包括:提供一本質透明基板;形成至少一作用區域於基板上;以及切割基板以形成具有一作用區域的至少一發光二極體晶片。A method for forming a light-emitting diode wafer, as disclosed in US Patent No. 6,869,812 B1, "High-Power Aluminum Nitride Inductive Diode Light Emitting Diode", comprising: providing an intrinsically transparent substrate; forming at least An active region on the substrate; and the substrate is diced to form at least one light emitting diode wafer having an active region.
上述之先前技術係藉由於透明基板上,形成複數個具細長幾何結構之作用區域,並於每一作用區域中設置發光二極體,用以提昇整體之出光效率。然而美國專利第6,869,812 B1號中,藉由細長幾何結構所排列形成之發光二極體晶片,其出光 時所呈現之光型受到細長幾何結構之限制,易產生光分布不均勻與光型不對稱之問題。The above prior art is to form a plurality of active regions having elongated structures on the transparent substrate, and to provide light-emitting diodes in each of the active regions for improving the overall light-emitting efficiency. However, in U.S. Patent No. 6,869,812 B1, a light-emitting diode wafer formed by an elongated geometric structure is emitted. The light pattern presented by the time is limited by the elongated geometry, which is prone to the problem of uneven light distribution and optical asymmetry.
又發光二極體晶片上之作用區域受到細長幾何結構之限制,因此基板之面積無法做最有效之利用。且由於細長之幾何結構,或是任何類型之結構,其係為非對稱排列於基板上,因此無法呈現出對稱之光型。Also, the active area on the light-emitting diode wafer is limited by the elongated geometry, so the area of the substrate cannot be utilized most effectively. And because of the elongated geometry, or any type of structure, which is arranged asymmetrically on the substrate, it cannot exhibit a symmetrical light pattern.
本發明係為一種軸對稱發光二極體之製造方法,其係以軸對稱方式排列複數個發光區域,因此可於出光時呈現對稱之光型,並使得光線集中不分散,以達到提高出光效率之功效。The invention is a method for manufacturing an axisymmetric light-emitting diode, which arranges a plurality of light-emitting regions in an axisymmetric manner, so that a symmetrical light pattern can be exhibited when light is emitted, and light is concentrated and dispersed, so as to improve light extraction efficiency. The effect.
本發明係為一種軸對稱發光二極體之製造方法,藉由使用軸對稱排列方式,以有效利用基板面積,並形成最多發光區域,因此可達到有效利用基板面積之功效。The present invention is a method for manufacturing an axisymmetric light-emitting diode. By using an axisymmetric arrangement to effectively utilize the substrate area and form the most light-emitting area, the effect of effectively utilizing the substrate area can be achieved.
為達上述功效,本發明提供一種軸對稱發光二極體之製造方法,其包括下列步驟:提供一基板,且基板係具有一軸心;以及形成複數個發光區域,其係以軸對稱方式,以軸心為中心,形成於基板上且相互絕緣,又每一發光區域係具有至少一發光二極體,且發光二極體係相互電性相連。In order to achieve the above effects, the present invention provides a method for manufacturing an axisymmetric light emitting diode, comprising the steps of: providing a substrate, wherein the substrate has an axis; and forming a plurality of light emitting regions in an axisymmetric manner, The core is centered on the substrate and insulated from each other, and each of the light-emitting regions has at least one light-emitting diode, and the light-emitting diodes are electrically connected to each other.
藉由本發明的實施,至少可達到下列進步功效:一、藉由軸對稱之方式排列,用以使得具複數個發光區域之發光二極體呈現對稱且不分散之良好光型。By the implementation of the present invention, at least the following advancements can be achieved: 1. Arranged by means of axisymmetry to enable the light-emitting diodes having a plurality of light-emitting regions to exhibit a symmetrical and non-dispersive good light pattern.
二、由於發光二極體出光之光型良好,使得出光效率並也獲得提升。Second, due to the good light type of the light emitting diode, the light extraction efficiency is also improved.
為了使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點,因此將在實施方式中詳細敘述本發明之詳細特徵以及優點。In order to make those skilled in the art understand the technical content of the present invention and implement it, and according to the disclosure, the patent scope and the drawings, the related objects and advantages of the present invention can be easily understood by those skilled in the art. The detailed features and advantages of the present invention will be described in detail in the embodiments.
第1圖係為本發明之一種軸對稱發光二極體之製造方法流程實施例圖。第2圖係為本發明之一種軸對稱發光二極體10之立體分解實施例圖一。第3圖係為第2圖之結合實施例圖。第4圖係為沿第3圖中A-A剖線之剖視實施例圖。第5圖係為第2圖之等效電路圖。第6圖係為本發明之一種軸對稱發光二極體10之立體分解實施例圖二。第7圖係為為第6圖之結合實施例圖。第8圖係為第7圖之等效電路圖。Fig. 1 is a view showing an embodiment of a flow of a method for manufacturing an axisymmetric light-emitting diode of the present invention. 2 is a perspective exploded view of an axially symmetric light-emitting diode 10 of the present invention. Fig. 3 is a view showing a combined embodiment of Fig. 2. Fig. 4 is a cross-sectional view of the embodiment taken along line A-A of Fig. 3. Figure 5 is an equivalent circuit diagram of Figure 2. Fig. 6 is a perspective exploded view of an axially symmetric light-emitting diode 10 of the present invention. Fig. 7 is a view showing a combined embodiment of Fig. 6. Figure 8 is an equivalent circuit diagram of Figure 7.
如第1圖所示,本實施例係為一種軸對稱發光二極體10之製造方法,其包括下列步驟:提供一基板S10;以及形成複數個發光區域S20。As shown in FIG. 1, the present embodiment is a method for manufacturing an axisymmetric LED 201, which includes the steps of: providing a substrate S10; and forming a plurality of light emitting regions S20.
提供一基板S10:如第2圖及第3圖所示,基板20係具有一軸心21。且基板20之材質係可以為藍寶石、氮化鎵、氮化鋁…等。A substrate S10 is provided: as shown in FIGS. 2 and 3, the substrate 20 has a shaft center 21. The material of the substrate 20 may be sapphire, gallium nitride, aluminum nitride, or the like.
形成複數個發光區域S20:如第2圖所示,複數個發光區域30係以基板20之軸心21為中心,依軸對稱方式形成於基板20上,例如:形成複數個圓形發光區域30,並以基板20之軸心21為中心,依同心圓方式排列。且如第2圖所示,基 板20係可以藉由蝕刻之方式形成複數個溝槽22,並同時被區分成複數個圓形發光區域30。又再於每一溝槽22上方覆蓋有絕緣層23,用以使得每一發光區域30彼此相互絕緣。A plurality of light-emitting regions S20 are formed. As shown in FIG. 2, a plurality of light-emitting regions 30 are formed on the substrate 20 in an axisymmetric manner centering on the axis 21 of the substrate 20, for example, forming a plurality of circular light-emitting regions 30. And arranged in a concentric manner centering on the axis 21 of the substrate 20. And as shown in Figure 2, the base The board 20 can form a plurality of trenches 22 by etching and simultaneously divide into a plurality of circular light emitting regions 30. Further, an insulating layer 23 is covered over each of the trenches 22 to insulate each of the light-emitting regions 30 from each other.
如第3圖所示,基板20上之每一發光區域30係分別具有至少一發光二極體40,且發光二極體40係可以為由一n型電極41、一n型半導體層42、一主動層43、一p型半導體層44與一p型電極45所構成,且p型電極45可以為一透明電極,藉以增加出光面積。As shown in FIG. 3 , each of the light-emitting regions 30 on the substrate 20 has at least one light-emitting diode 40 , and the light-emitting diode 40 can be an n-type electrode 41 and an n-type semiconductor layer 42 . An active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45 are formed, and the p-type electrode 45 can be a transparent electrode to increase the light-emitting area.
如第4圖所示,基板20上之每一發光區域30又可以再利用導電材料50,例如:高導電係數之金屬,使得每一發光二極體40以串聯或並聯方式電性相連,因此軸對稱發光二極體10係可以承受高電壓或高電流之負載。As shown in FIG. 4, each of the light-emitting regions 30 on the substrate 20 can reuse the conductive material 50, for example, a metal having a high conductivity, so that each of the light-emitting diodes 40 is electrically connected in series or in parallel. The axisymmetric LED 10 can withstand high voltage or high current loads.
當使用導電材料50使得每一發光區域30中之每一發光二極體40形成串聯之電路結構時,其等效電路圖係如第5圖所示,因此軸對稱發光二極體10所能夠承受之工作電壓係增加為單顆時之三倍,所以可更廣泛地應用於日常生活中。When the conductive material 50 is used such that each of the light-emitting diodes 40 in each of the light-emitting regions 30 forms a circuit structure in series, the equivalent circuit diagram is as shown in FIG. 5, so that the axis-symmetrical light-emitting diode 10 can withstand The working voltage is increased by three times that of a single one, so it can be more widely used in daily life.
除此之外,軸對稱方式排列使得基板20上之每一發光區域30中發光二極體40出光時,皆以基板20之軸心21為出光軸,所以軸對稱發光二極體10出光時,可呈現對稱不分散之良好光型。且軸對稱之排列方式係可以於有限之基板20面積上,排列最多數量之發光區域30,使得可設置最多數量之發光二極體40,因此進一步可提高整體之出光亮度。In addition, the axisymmetric arrangement is such that when the light emitting diode 40 is emitted from each of the light emitting regions 30 on the substrate 20, the axis 21 of the substrate 20 is taken as the optical axis, so that the axisymmetric light emitting diode 10 emits light. It can exhibit a good light pattern that is symmetrical and non-dispersive. The axisymmetric arrangement can arrange a maximum number of light-emitting regions 30 over a limited area of the substrate 20, so that the maximum number of light-emitting diodes 40 can be disposed, thereby further improving the overall light-emitting brightness.
如第6圖所示,基板20上之每一發光區域30係可以進一步藉由於基板20上蝕刻之方式,使得基板20分割成複數個等 面積、等間距且非矩形之次發光區域30’,例如:複數個梯形之次發光區域30’,且每一次發光區域30’係相互絕緣且具有數量相等之發光二極體40。As shown in FIG. 6, each of the light-emitting regions 30 on the substrate 20 can be further divided into a plurality of substrates 20 by etching on the substrate 20. The area, the equally spaced, and non-rectangular secondary light-emitting regions 30', for example, a plurality of trapezoidal secondary light-emitting regions 30', and each of the light-emitting regions 30' are insulated from each other and have an equal number of light-emitting diodes 40.
又次發光區域30’中之每一發光二極體40亦可以由一n型電極41、一n型半導體層42、一主動層43、一p型半導體層44與一p型電極45所構成,且p型電極45可以為一透明電極,使得增加出光面積。Each of the light-emitting diodes 30' may also be composed of an n-type electrode 41, an n-type semiconductor layer 42, an active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45. And the p-type electrode 45 can be a transparent electrode, so that the light-emitting area is increased.
如第7圖所示,次發光區域30’中之每一發光二極體40亦可以利用導電材料50彼此電性相連,用以形成如第8圖所示之串聯及並聯電路結構。當將次發光區域30’中複數個發光二極體40以串聯及並聯連接之後,使得軸對稱之發光二極體10係可以承受較高電壓及較高電流之輸入,並擴大應用範圍。As shown in Fig. 7, each of the light-emitting diodes 40' may be electrically connected to each other by a conductive material 50 for forming a series and parallel circuit structure as shown in Fig. 8. When a plurality of light-emitting diodes 40 in the secondary light-emitting region 30' are connected in series and in parallel, the axis-symmetrical light-emitting diode 10 can withstand higher voltage and higher current input, and expand the application range.
而每一次發光區域30’亦以基板20之軸心21為中心等間距排列,且每一次發光區域30’可以為等面積。因此當基板20上之發光區域30及次發光區域30’中每一發光二極體40出光時,係可以使得軸對稱發光二極體10形成對稱且不分散之良好光型,進一步可提升出光亮度。Each of the light-emitting regions 30' is also arranged at equal intervals centering on the axis 21 of the substrate 20, and each of the light-emitting regions 30' may have an equal area. Therefore, when each of the light-emitting regions 30 and the light-emitting diodes 30 on the substrate 20 emit light, the axis-symmetrical light-emitting diodes 10 can form a symmetrical and non-dispersive good light pattern, thereby further enhancing the light output. brightness.
惟上述各實施例係用以說明本發明之特點,其目的在使熟習該技術者能瞭解本發明之內容並據以實施,而非限定本發明之專利範圍,故凡其他未脫離本發明所揭示之精神而完成之等效修飾或修改,仍應包含在以下所述之申請專利範圍中。The embodiments are described to illustrate the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the present invention and to implement the present invention without limiting the scope of the present invention. Equivalent modifications or modifications made by the spirit of the disclosure should still be included in the scope of the claims described below.
S10‧‧‧提供一基板S10‧‧‧ provides a substrate
S20‧‧‧形成複數個發光區域S20‧‧‧ forming a plurality of light-emitting areas
10‧‧‧軸對稱發光二極體10‧‧‧Axisymmetric Luminescent Diodes
20‧‧‧基板20‧‧‧Substrate
21‧‧‧軸心21‧‧‧Axis
22‧‧‧溝槽22‧‧‧ trench
23‧‧‧絕緣層23‧‧‧Insulation
30‧‧‧發光區域30‧‧‧Lighting area
30‧‧‧次發光區域30‧‧‧time light-emitting areas
40‧‧‧發光二極體40‧‧‧Lighting diode
41‧‧‧n型電極41‧‧‧n type electrode
42‧‧‧n型半導體層42‧‧‧n type semiconductor layer
43‧‧‧主動層43‧‧‧ active layer
44‧‧‧p型半導體層44‧‧‧p-type semiconductor layer
45‧‧‧p型電極45‧‧‧p-type electrode
50‧‧‧導電材料50‧‧‧Electrical materials
第1圖係為本發明之一種軸對稱發光二極體之製造方法流程實 施例圖。1 is a flow chart of a method for manufacturing an axisymmetric light-emitting diode of the present invention. Example map.
第2圖係為本發明之一種軸對稱發光二極體之立體分解實施例圖一。2 is a perspective exploded view of an axisymmetric light emitting diode of the present invention.
第3圖係為第2圖之結合實施例圖。Fig. 3 is a view showing a combined embodiment of Fig. 2.
第4圖係為沿第3圖中A-A剖線之剖視實施例圖。Fig. 4 is a cross-sectional view of the embodiment taken along line A-A of Fig. 3.
第5圖係為第2圖之等效電路圖。Figure 5 is an equivalent circuit diagram of Figure 2.
第6圖係為本發明之一種軸對稱發光二極體之立體分解實施例圖二。Figure 6 is a perspective exploded view of an axially symmetric light-emitting diode of the present invention.
第7圖係為為第6圖之結合實施例圖。Fig. 7 is a view showing a combined embodiment of Fig. 6.
第8圖係為第7圖之等效電路圖。Figure 8 is an equivalent circuit diagram of Figure 7.
S10‧‧‧提供一基板S10‧‧‧ provides a substrate
S20‧‧‧形成複數個發光區域S20‧‧‧ forming a plurality of light-emitting areas
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