TWI447942B - Method for fabricating an axis-symmetric light emitting diode (led) die - Google Patents

Description

Method for manufacturing axisymmetric light emitting diode

The invention relates to a method for manufacturing an axisymmetric light-emitting diode, in particular to a method for manufacturing an axisymmetric light-emitting diode for improving a light-emitting diode light pattern having a plurality of light-emitting regions.

At present, the main development trend of the light-emitting diode is to develop a high-brightness light-emitting diode, which is used to improve the overall brightness of the light-emitting diode by encapsulating a plurality of light-emitting diode units in the same body. However, in the packaging process, since the distance between each of the light-emitting diodes is extremely small, when each of the light-emitting diodes is fixed in the base by using silver glue or solder, there is a possibility that silver glue or solder overflow may occur. This causes a short circuit in the light-emitting diode. Therefore, if a plurality of light-emitting regions can be formed on a single light-emitting diode wafer, the problem of silver glue or solder overflow can be avoided, and the effect of improving brightness can also be achieved.

A method for forming a light-emitting diode wafer, as disclosed in US Patent No. 6,869,812 B1, "High-Power Aluminum Nitride Inductive Diode Light Emitting Diode", comprising: providing an intrinsically transparent substrate; forming at least An active region on the substrate; and the substrate is diced to form at least one light emitting diode wafer having an active region.

The above prior art is to form a plurality of active regions having elongated structures on the transparent substrate, and to provide light-emitting diodes in each of the active regions for improving the overall light-emitting efficiency. However, in U.S. Patent No. 6,869,812 B1, a light-emitting diode wafer formed by an elongated geometric structure is emitted. The light pattern presented by the time is limited by the elongated geometry, which is prone to the problem of uneven light distribution and optical asymmetry.

Also, the active area on the light-emitting diode wafer is limited by the elongated geometry, so the area of the substrate cannot be utilized most effectively. And because of the elongated geometry, or any type of structure, which is arranged asymmetrically on the substrate, it cannot exhibit a symmetrical light pattern.

The invention is a method for manufacturing an axisymmetric light-emitting diode, which arranges a plurality of light-emitting regions in an axisymmetric manner, so that a symmetrical light pattern can be exhibited when light is emitted, and light is concentrated and dispersed, so as to improve light extraction efficiency. The effect.

The present invention is a method for manufacturing an axisymmetric light-emitting diode. By using an axisymmetric arrangement to effectively utilize the substrate area and form the most light-emitting area, the effect of effectively utilizing the substrate area can be achieved.

In order to achieve the above effects, the present invention provides a method for manufacturing an axisymmetric light emitting diode, comprising the steps of: providing a substrate, wherein the substrate has an axis; and forming a plurality of light emitting regions in an axisymmetric manner, The core is centered on the substrate and insulated from each other, and each of the light-emitting regions has at least one light-emitting diode, and the light-emitting diodes are electrically connected to each other.

By the implementation of the present invention, at least the following advancements can be achieved: 1. Arranged by means of axisymmetry to enable the light-emitting diodes having a plurality of light-emitting regions to exhibit a symmetrical and non-dispersive good light pattern.

Second, due to the good light type of the light emitting diode, the light extraction efficiency is also improved.

In order to make those skilled in the art understand the technical content of the present invention and implement it, and according to the disclosure, the patent scope and the drawings, the related objects and advantages of the present invention can be easily understood by those skilled in the art. The detailed features and advantages of the present invention will be described in detail in the embodiments.

Fig. 1 is a view showing an embodiment of a flow of a method for manufacturing an axisymmetric light-emitting diode of the present invention. 2 is a perspective exploded view of an axially symmetric light-emitting diode 10 of the present invention. Fig. 3 is a view showing a combined embodiment of Fig. 2. Fig. 4 is a cross-sectional view of the embodiment taken along line A-A of Fig. 3. Figure 5 is an equivalent circuit diagram of Figure 2. Fig. 6 is a perspective exploded view of an axially symmetric light-emitting diode 10 of the present invention. Fig. 7 is a view showing a combined embodiment of Fig. 6. Figure 8 is an equivalent circuit diagram of Figure 7.

As shown in FIG. 1, the present embodiment is a method for manufacturing an axisymmetric LED 201, which includes the steps of: providing a substrate S10; and forming a plurality of light emitting regions S20.

A substrate S10 is provided: as shown in FIGS. 2 and 3, the substrate 20 has a shaft center 21. The material of the substrate 20 may be sapphire, gallium nitride, aluminum nitride, or the like.

A plurality of light-emitting regions S20 are formed. As shown in FIG. 2, a plurality of light-emitting regions 30 are formed on the substrate 20 in an axisymmetric manner centering on the axis 21 of the substrate 20, for example, forming a plurality of circular light-emitting regions 30. And arranged in a concentric manner centering on the axis 21 of the substrate 20. And as shown in Figure 2, the base The board 20 can form a plurality of trenches 22 by etching and simultaneously divide into a plurality of circular light emitting regions 30. Further, an insulating layer 23 is covered over each of the trenches 22 to insulate each of the light-emitting regions 30 from each other.

As shown in FIG. 3 , each of the light-emitting regions 30 on the substrate 20 has at least one light-emitting diode 40 , and the light-emitting diode 40 can be an n-type electrode 41 and an n-type semiconductor layer 42 . An active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45 are formed, and the p-type electrode 45 can be a transparent electrode to increase the light-emitting area.

As shown in FIG. 4, each of the light-emitting regions 30 on the substrate 20 can reuse the conductive material 50, for example, a metal having a high conductivity, so that each of the light-emitting diodes 40 is electrically connected in series or in parallel. The axisymmetric LED 10 can withstand high voltage or high current loads.

When the conductive material 50 is used such that each of the light-emitting diodes 40 in each of the light-emitting regions 30 forms a circuit structure in series, the equivalent circuit diagram is as shown in FIG. 5, so that the axis-symmetrical light-emitting diode 10 can withstand The working voltage is increased by three times that of a single one, so it can be more widely used in daily life.

In addition, the axisymmetric arrangement is such that when the light emitting diode 40 is emitted from each of the light emitting regions 30 on the substrate 20, the axis 21 of the substrate 20 is taken as the optical axis, so that the axisymmetric light emitting diode 10 emits light. It can exhibit a good light pattern that is symmetrical and non-dispersive. The axisymmetric arrangement can arrange a maximum number of light-emitting regions 30 over a limited area of the substrate 20, so that the maximum number of light-emitting diodes 40 can be disposed, thereby further improving the overall light-emitting brightness.

As shown in FIG. 6, each of the light-emitting regions 30 on the substrate 20 can be further divided into a plurality of substrates 20 by etching on the substrate 20. The area, the equally spaced, and non-rectangular secondary light-emitting regions 30', for example, a plurality of trapezoidal secondary light-emitting regions 30', and each of the light-emitting regions 30' are insulated from each other and have an equal number of light-emitting diodes 40.

Each of the light-emitting diodes 30' may also be composed of an n-type electrode 41, an n-type semiconductor layer 42, an active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45. And the p-type electrode 45 can be a transparent electrode, so that the light-emitting area is increased.

As shown in Fig. 7, each of the light-emitting diodes 40' may be electrically connected to each other by a conductive material 50 for forming a series and parallel circuit structure as shown in Fig. 8. When a plurality of light-emitting diodes 40 in the secondary light-emitting region 30' are connected in series and in parallel, the axis-symmetrical light-emitting diode 10 can withstand higher voltage and higher current input, and expand the application range.

Each of the light-emitting regions 30' is also arranged at equal intervals centering on the axis 21 of the substrate 20, and each of the light-emitting regions 30' may have an equal area. Therefore, when each of the light-emitting regions 30 and the light-emitting diodes 30 on the substrate 20 emit light, the axis-symmetrical light-emitting diodes 10 can form a symmetrical and non-dispersive good light pattern, thereby further enhancing the light output. brightness.

The embodiments are described to illustrate the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the present invention and to implement the present invention without limiting the scope of the present invention. Equivalent modifications or modifications made by the spirit of the disclosure should still be included in the scope of the claims described below.

S10‧‧‧ provides a substrate

S20‧‧‧ forming a plurality of light-emitting areas

10‧‧‧Axisymmetric Luminescent Diodes

20‧‧‧Substrate

21‧‧‧Axis

22‧‧‧ trench

23‧‧‧Insulation

30‧‧‧Lighting area

30‧‧‧time light-emitting areas

40‧‧‧Lighting diode

41‧‧‧n type electrode

42‧‧‧n type semiconductor layer

43‧‧‧ active layer

44‧‧‧p-type semiconductor layer

45‧‧‧p-type electrode

50‧‧‧Electrical materials

1 is a flow chart of a method for manufacturing an axisymmetric light-emitting diode of the present invention. Example map.

2 is a perspective exploded view of an axisymmetric light emitting diode of the present invention.

Fig. 3 is a view showing a combined embodiment of Fig. 2.

Fig. 4 is a cross-sectional view of the embodiment taken along line A-A of Fig. 3.

Figure 5 is an equivalent circuit diagram of Figure 2.

Figure 6 is a perspective exploded view of an axially symmetric light-emitting diode of the present invention.

Fig. 7 is a view showing a combined embodiment of Fig. 6.

Figure 8 is an equivalent circuit diagram of Figure 7.

S10‧‧‧ provides a substrate

S20‧‧‧ forming a plurality of light-emitting areas

Claims (2)

A method for manufacturing an axisymmetric light emitting diode, comprising the steps of: providing a substrate, wherein the substrate has an axis; and forming a plurality of light emitting regions in an axisymmetric manner, centered on the axis Formed on the substrate and insulated from each other, and each of the light-emitting regions has at least one light-emitting diode, and the light-emitting diode system is electrically connected to each other in series or parallel or series and parallel, and each of the light-emitting regions The system further divides into a plurality of equal-area and equally spaced trapezoidal sub-light-emitting regions, and the number of the light-emitting diode systems in each of the secondary light-emitting regions is equal. The manufacturing method of claim 1, wherein the light emitting regions are a plurality of circular light emitting regions.