WO2010034132A1 - A method of manufacturing the leds with symmetry axis - Google Patents

A method of manufacturing the leds with symmetry axis Download PDF

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Publication number
WO2010034132A1
WO2010034132A1 PCT/CN2008/001640 CN2008001640W WO2010034132A1 WO 2010034132 A1 WO2010034132 A1 WO 2010034132A1 CN 2008001640 W CN2008001640 W CN 2008001640W WO 2010034132 A1 WO2010034132 A1 WO 2010034132A1
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WO
WIPO (PCT)
Prior art keywords
light
light emitting
substrate
axisymmetric
emitting diode
Prior art date
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PCT/CN2008/001640
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French (fr)
Chinese (zh)
Inventor
陈明鸿
陈景宜
Original Assignee
海立尔股份有限公司
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Publication date
Application filed by 海立尔股份有限公司 filed Critical 海立尔股份有限公司
Priority to US13/054,272 priority Critical patent/US8207001B2/en
Priority to PCT/CN2008/001640 priority patent/WO2010034132A1/en
Publication of WO2010034132A1 publication Critical patent/WO2010034132A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a method of fabricating an axisymmetric light emitting diode, and more particularly to a method of fabricating an axisymmetric light emitting diode for use in improving the light pattern of a light emitting diode having a plurality of light emitting regions.
  • the main development trend of light-emitting diodes is to develop high-brightness light-emitting diodes, which are used to improve the overall brightness of the light-emitting diodes by packaging a plurality of light-emitting diode units in the same body.
  • the packaging process since the distance between each of the light-emitting diodes is extremely small, when each of the light-emitting diodes is fixed in the body by using silver glue or solder, there is a possibility that silver glue or solder overflow may occur, resulting in light-emitting diodes. A short circuit has occurred.
  • a plurality of light-emitting regions can be formed on a single light-emitting diode chip (chip or wafer, which is referred to herein as a chip), the problem of silver glue or solder overflow can be avoided, and the effect of improving brightness can be achieved.
  • a method for forming an LED chip as disclosed in U.S. Patent No. 6,869,812, the disclosure of which is incorporated herein by reference in its entirety, the entire disclosure of the entire disclosure of the entire disclosure of At least one active region on the substrate; and the substrate is cut to form at least one light emitting diode chip having an active region.
  • the above prior art is to form a plurality of active regions having elongated structures on a transparent substrate, and to provide light-emitting diodes in each of the active regions for improving the overall light-emitting efficiency.
  • the light-emitting diode chip formed by the elongated geometric structure in the U.S. Patent No. 6, 869, 812 B1 the light pattern exhibited by the light is limited by the elongated geometric structure, and the light distribution is uneven. The problem of light type asymmetry.
  • the active area on the LED chip is limited by the elongated geometry, so the area of the substrate cannot be utilized most efficiently. And because of the elongated geometry, or any type of structure, which is asymmetrically arranged on the substrate, it does not exhibit a symmetrical light pattern. Summary of the invention
  • the object of the present invention is to overcome the defects of the conventional method for manufacturing a light emitting diode and to provide a novel method for manufacturing an axisymmetric light emitting diode.
  • the technical problem to be solved is to arrange a plurality of lights in an axisymmetric manner. The region can thus exhibit a symmetrical light pattern when the light is emitted, and the light is concentrated and not dispersed, so as to improve the light-emitting efficiency.
  • Another object of the present invention is to provide a novel method for fabricating an axisymmetric light emitting diode, the technical problem to be solved is to make effective use of the substrate surface by using an axisymmetric arrangement.
  • the product is formed and the most luminescent area is formed, so that the effect of effectively utilizing the substrate area can be achieved.
  • a method for fabricating an axisymmetric light emitting diode according to the present invention includes the steps of: providing a substrate having an axis; and forming a plurality of light emitting regions in an axisymmetric manner, the axis The center of the core is formed on the substrate and insulated from each other, and each of the light emitting regions has at least one light emitting diode, and the light emitting diodes are electrically connected to each other.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the light emitting region is further divided into a plurality of equal-area and equally spaced secondary light-emitting regions, and the light-emitting diodes in each of the secondary light-emitting regions are equal in number.
  • the manufacturing method of the axisymmetric light emitting diode of the present invention has at least the following advantages and advantages: 1.
  • the present invention is arranged in an axisymmetric manner to make the light emitting diodes having multiple light emitting regions appear symmetric and Good light type that does not disperse.
  • the present invention has improved light extraction efficiency due to the good light output of the light emitting diode.
  • the present invention relates to a method of fabricating an axisymmetric light emitting diode comprising the steps of: providing a substrate; and forming a plurality of light emitting regions.
  • the substrate has an axis, and the plurality of light-emitting regions are formed on the substrate in an axisymmetric manner centering on the axis of the substrate and are insulated from each other.
  • Each of the light emitting regions has at least one light emitting diode, and each of the light emitting diodes is electrically connected to each other. Since the plurality of light-emitting regions are formed on the substrate in an axisymmetric manner, the light-emitting pattern of the axisymmetric light-emitting diode can be a well-symmetrical light pattern.
  • the invention has the above-mentioned many advantages and practical values, and has great improvement in manufacturing methods and functions, has significant advances in technology, and has produced useful and practical effects, and is more existing than the existing photodiodes.
  • the manufacturing method has an outstanding and outstanding effect, which is more suitable for practical > a new design that is innovative, progressive and practical.
  • Figure 1 is a flow chart showing a preferred embodiment of a method of fabricating an axisymmetric light emitting diode of the present invention.
  • 2 is an exploded perspective view of an embodiment of an axisymmetric light emitting diode of the present invention.
  • Figure 3 is a schematic view of the combination of Figure 2.
  • Figure 4 is a cross-sectional view taken along line A-A of Figure 3;
  • Figure 5 is an equivalent circuit diagram of Figure 2.
  • Fig. 6 is an exploded perspective view showing another embodiment of the axisymmetric light emitting diode of the present invention.
  • Fig. 7 is a combined schematic view of Fig. 6.
  • Figure 8 is an equivalent circuit diagram of Figure 7.
  • Insulation 30 Light-emitting area
  • type electrode 42 n-type semiconductor layer
  • Type electrode 50 Conductive material The best way to achieve the invention
  • Figure 1 is a flow chart showing a preferred embodiment of a method of fabricating an axisymmetric light emitting diode of the present invention.
  • 2 is an exploded perspective view of an embodiment of the axisymmetric light emitting diode 10 of the present invention.
  • Figure 3 is a schematic view of the combination of Figure 1.
  • Figure 4 is a cross-sectional view taken along the line A- ⁇ in Figure 3.
  • Figure 5 is an equivalent circuit diagram of Figure 2.
  • Fig. 6 is an exploded perspective view showing another embodiment of the axisymmetric light emitting diode 10 of the present invention.
  • Figure 7 is a schematic view of the combination of Figure 6.
  • Figure 8 is an equivalent circuit diagram of Figure 7.
  • a method of manufacturing an axisymmetric LED 10 includes the steps of: providing a substrate S10; and forming a plurality of light emitting regions S20.
  • the substrate 20 has an axis 21.
  • the material of the substrate 20 may be sapphire, gallium nitride, aluminum nitride, or the like.
  • the plurality of light-emitting regions S20 are formed as described above.
  • the plurality of light-emitting regions 30 are formed on the substrate 20 in an axisymmetric manner centering on the axis 21 of the substrate 20, for example, forming a plurality of circular light-emitting regions. 30, and arranged in a concentric manner centering on the axis 21 of the substrate 20.
  • the substrate 20 is formed by etching to form a plurality of trenches 22, and is simultaneously divided into a plurality of circular light-emitting regions 30.
  • an insulating layer 23 is covered over each of the trenches 22 to insulate each of the light-emitting regions 30 from each other.
  • each of the light emitting regions 30 on the substrate 20 has at least one light emitting light respectively.
  • the pole tube 40 and the light emitting diode 40 may be composed of an n-type electrode 41, an n-type semiconductor layer 42, an active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45, and the p-type electrode 45 It can be a transparent electrode to increase the light output area.
  • each of the light-emitting regions 30 on the substrate 20 can reuse the conductive material 50, for example, a metal having high conductivity, such that each of the light-emitting diodes 40 is electrically connected in series or in parallel, and thus the axisymmetric light is emitted.
  • the diode 10 is a load that can withstand high voltage or high current.
  • the equivalent circuit diagram is as shown in FIG. 5, so that the operating voltage that the axis-symmetrical light-emitting diode 10 can withstand is It is three times as large as a single one, so it can be more widely used in everyday life.
  • the axisymmetric arrangement is such that when the light emitting diode 40 is emitted from each of the light emitting regions 30 on the substrate 20, the axis 21 of the substrate 20 is taken as the optical axis, so that the axisymmetric LED 10 can exhibit symmetry when it emits light. Good light type that does not disperse.
  • the axisymmetric arrangement is such that a maximum number of light-emitting regions 30 can be arranged over a limited area of the substrate 20, so that a maximum number of light-emitting diodes 40 can be disposed, thereby further improving the overall light-emitting brightness.
  • each of the light-emitting regions 30 on the substrate 20 can be further etched on the substrate 20 such that the substrate 20 is divided into a plurality of equal-area, equally spaced, non-rectangular secondary light-emitting regions 30, For example, a plurality of trapezoidal sub-light-emitting regions 30, and each of the light-emitting regions 30, are insulated from each other and have an equal number of light-emitting diodes 40.
  • Each of the light-emitting regions 30 of the second light-emitting region 30 may also be composed of an n-type electrode 41, an n-type semiconductor layer 42, an active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45, and
  • the type electrode 45 may be a transparent electrode to increase the light exit area.
  • each of the light-emitting diodes 40 can also be electrically connected to each other by a conductive material 50 to form a series and parallel circuit structure as shown in FIG.
  • the axis-symmetrical light-emitting diode 10 is an input that can withstand higher voltages and higher currents, and expands the application range.
  • Each of the light-emitting regions 30 is also arranged at equal intervals around the axis 21 of the substrate 20, and each of the light-emitting regions 30 may have an equal area. Therefore, when each of the light-emitting diodes 30 and the secondary light-emitting regions 30 on the substrate 20 emit light, the axisymmetric light-emitting diodes 10 can be formed into a symmetrical and non-dispersive good light pattern, and the light brightness can be further improved.

Abstract

A method of manufacturing the LEDs with symmetry axis includes: providing a substrate (20); forming multiple light emitting areas (30). The substrate has an axes (21). The multiple light emitting areas make the axes (21) of the substrate (20) as the center and are formed on the substrate (20) according to the mode of symmetry axis. The multiple light emitting areas (30) are insulated one another. Each of the light emitting areas (30) has at least one LED. Each of the LEDs is connected electrically one another.

Description

轴对称发光二极管的制造方法  Method for manufacturing axisymmetric light emitting diode
技术领域  Technical field
本发明涉及一种轴对称发光二极管的制造方法,特别是涉及一种应用 于改善具有多个发光区域的发光二极管光型的轴对称发光二极管的制造方 法。 背景技术  The present invention relates to a method of fabricating an axisymmetric light emitting diode, and more particularly to a method of fabricating an axisymmetric light emitting diode for use in improving the light pattern of a light emitting diode having a plurality of light emitting regions. Background technique
目前发光二极管的主要发展趋势为开发高亮度发光二极管, 其是藉由 将多颗发光二极管单元封装于同一座体中, 用以提高发光二极管的整体亮 度。 然而在封装过程中, 由于每一发光二极管间距离极小, 因此使用银胶 或焊锡将每一发光二极管固定于座体中时, 将有可能产生银胶或焊锡外溢 的问题, 使得导致发光二极管出现短路现象。 因此若可在单一发光二极管 芯片 (芯片即晶片,本文均称为芯片)上形成多个发光区域, 则将可以避免 银胶或焊锡外溢的问题, 并也达到提高亮度的功效。  At present, the main development trend of light-emitting diodes is to develop high-brightness light-emitting diodes, which are used to improve the overall brightness of the light-emitting diodes by packaging a plurality of light-emitting diode units in the same body. However, in the packaging process, since the distance between each of the light-emitting diodes is extremely small, when each of the light-emitting diodes is fixed in the body by using silver glue or solder, there is a possibility that silver glue or solder overflow may occur, resulting in light-emitting diodes. A short circuit has occurred. Therefore, if a plurality of light-emitting regions can be formed on a single light-emitting diode chip (chip or wafer, which is referred to herein as a chip), the problem of silver glue or solder overflow can be avoided, and the effect of improving brightness can be achieved.
如美国专利第 6, 869, 812 B1号 "高功率氮化铝铟镓型多芯片发光二极 管" 中所揭露一种用以形成一发光二极管芯片的方法, 其包括: 提供一本 质透明基板; 形成至少一作用区域于基板上;以及切割基板以形成具有一作 用区域的至少一发光二极管芯片。  A method for forming an LED chip, as disclosed in U.S. Patent No. 6,869,812, the disclosure of which is incorporated herein by reference in its entirety, the entire disclosure of the entire disclosure of the entire disclosure of At least one active region on the substrate; and the substrate is cut to form at least one light emitting diode chip having an active region.
上述的先前技术是藉由在透明基板上, 形成多个具细长几何结构的作 用区域, 并在每一作用区域中设置发光二极管, 用以提升整体的出光效率。 然而美国专利第 6, 869, 812 B1号中, 藉由细长几何结构所排列形成的发光 二极管芯片, 其出光时所呈现的光型受到细长几何结构的限制, 易产生光 分布不均匀与光型不对称的问题。  The above prior art is to form a plurality of active regions having elongated structures on a transparent substrate, and to provide light-emitting diodes in each of the active regions for improving the overall light-emitting efficiency. However, in the light-emitting diode chip formed by the elongated geometric structure in the U.S. Patent No. 6, 869, 812 B1, the light pattern exhibited by the light is limited by the elongated geometric structure, and the light distribution is uneven. The problem of light type asymmetry.
又发光二极管芯片上的作用区域受到细长几何结构的限制, 因此基板 的面积无法做最有效的利用。 且由于细长的几何结构, 或是任何类型的结 构,其是为非对称排列于基板上, 因此无法呈现出对称的光型。 发明内容  Moreover, the active area on the LED chip is limited by the elongated geometry, so the area of the substrate cannot be utilized most efficiently. And because of the elongated geometry, or any type of structure, which is asymmetrically arranged on the substrate, it does not exhibit a symmetrical light pattern. Summary of the invention
本发明的目的在于,克服现有的发光二极管的制造方法存在的缺陷,而 提供一种新的轴对称发光二极管的制造方法, 所要解决的技术问题是使其 是以轴对称方式排列多个发光区域, 因此可在出光时呈现对称的光型,并使 得光线集中不分散, 以达到提高出光效率的功效。  The object of the present invention is to overcome the defects of the conventional method for manufacturing a light emitting diode and to provide a novel method for manufacturing an axisymmetric light emitting diode. The technical problem to be solved is to arrange a plurality of lights in an axisymmetric manner. The region can thus exhibit a symmetrical light pattern when the light is emitted, and the light is concentrated and not dispersed, so as to improve the light-emitting efficiency.
本发明的另一目的在于,提供一种新的轴对称发光二极管的制造方法, 所要解决的技术问题是使其藉由使用轴对称排列方式, 以有效利用基板面 积,并形成最多发光区域,因此可达到有效利用基板面积的功效。 Another object of the present invention is to provide a novel method for fabricating an axisymmetric light emitting diode, the technical problem to be solved is to make effective use of the substrate surface by using an axisymmetric arrangement. The product is formed and the most luminescent area is formed, so that the effect of effectively utilizing the substrate area can be achieved.
本发明的目的及解决其技术问题是采用以下技术方案来实现的。 依据 本发明提出的一种轴对称发光二极管的制造方法, 其包括以下步骤: 提供 一基板, 且该基板是具有一轴心; 以及形成多个发光区域, 其是以轴对称 方式, 以该轴心为中心, 形成于该基板上且相互绝缘, 又每一该发光区域 是具有至少一发光二极管, 且该些发光二极管是相互电性相连。  The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. A method for fabricating an axisymmetric light emitting diode according to the present invention includes the steps of: providing a substrate having an axis; and forming a plurality of light emitting regions in an axisymmetric manner, the axis The center of the core is formed on the substrate and insulated from each other, and each of the light emitting regions has at least one light emitting diode, and the light emitting diodes are electrically connected to each other.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的轴对称发光二极管的制造方法,其中所述的发光区域是为多个 圓形发光区域。  The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. The aforementioned method of manufacturing an axisymmetric light emitting diode, wherein the light emitting region is a plurality of circular light emitting regions.
前述的轴对称发光二极管的制造方法,其中所述的发光区域是进一步 分割成多个等面积且等间距的次发光区域, 且每一该次发光区域中的该发 光二极管是数量相等。  In the above method for manufacturing an axisymmetric light emitting diode, the light emitting region is further divided into a plurality of equal-area and equally spaced secondary light-emitting regions, and the light-emitting diodes in each of the secondary light-emitting regions are equal in number.
前述的轴对称发光二极管的制造方法,其中所述的次发光区域是为多 个非矩形次发光区域。  The aforementioned method of manufacturing an axisymmetric light emitting diode, wherein the secondary light emitting region is a plurality of non-rectangular secondary light emitting regions.
本发明与现有技术相比具有明显的优点和有益效果。 借由上述技术方 案, 本发明轴对称发光二极管的制造方法至少具有下列优点及有益效杲: 一、 本发明藉由轴对称的方式排列, 用以使得具多个发光区域的发光 二极管呈现对称且不分散的良好光型。  The present invention has significant advantages and advantageous effects over the prior art. With the above technical solution, the manufacturing method of the axisymmetric light emitting diode of the present invention has at least the following advantages and advantages: 1. The present invention is arranged in an axisymmetric manner to make the light emitting diodes having multiple light emitting regions appear symmetric and Good light type that does not disperse.
二、 本发明由于发光二极管出光的光型良好, 使得出光效率并也获得 提升。  2. The present invention has improved light extraction efficiency due to the good light output of the light emitting diode.
综上所述, 本发明是有关一种轴对称发光二极管的制造方法,其包括下 列步骤: 提供基板; 以及形成多个发光区域。 基板是具有轴心, 且多个发 光区域是以基板的轴心为中心, 依照轴对称方式形成于基板上,并相互绝 缘。 又每一发光区域是具有至少一发光二极管, 且每一发光二极管是相互 电性相连。 由于多个发光区域以轴对称方式形成于基板上,因此轴对称发光 二极管的出光光型可为对称良好的光型。 本发明具有上述诸多优点及实用 价值,其不论在制造方法或功能上皆有较大的改进,在技术上有显著的进 步,并产生了好用及实用的效果, 且较现有的光二极管的制造方法具有增进 的突出功效, 从而更加适于实用 > 诚为一新颖、 进步、 实用的新设计。  In summary, the present invention relates to a method of fabricating an axisymmetric light emitting diode comprising the steps of: providing a substrate; and forming a plurality of light emitting regions. The substrate has an axis, and the plurality of light-emitting regions are formed on the substrate in an axisymmetric manner centering on the axis of the substrate and are insulated from each other. Each of the light emitting regions has at least one light emitting diode, and each of the light emitting diodes is electrically connected to each other. Since the plurality of light-emitting regions are formed on the substrate in an axisymmetric manner, the light-emitting pattern of the axisymmetric light-emitting diode can be a well-symmetrical light pattern. The invention has the above-mentioned many advantages and practical values, and has great improvement in manufacturing methods and functions, has significant advances in technology, and has produced useful and practical effects, and is more existing than the existing photodiodes. The manufacturing method has an outstanding and outstanding effect, which is more suitable for practical > a new design that is innovative, progressive and practical.
上述说明仅是本发明技术方案的概述, 为了能够更清楚了解本发明的 技术手段, 而可依照说明书的内容予以实施, 并且为了让本发明的上述和 其他目的、 特征和优点能够更明显易懂, 以下特举较佳实施例, 并配合附 图,详细说明如下。 附图的简要说明  The above description is only an overview of the technical solutions of the present invention, and the technical means of the present invention can be more clearly understood, and can be implemented in accordance with the contents of the specification, and the above and other objects, features and advantages of the present invention can be more clearly understood. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
图 1是本发明轴对称发光二极管的制造方法的较佳实施例的流程图。 图 2是本发明的轴对称发光二极管的一种实施例的分解立体图。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart showing a preferred embodiment of a method of fabricating an axisymmetric light emitting diode of the present invention. 2 is an exploded perspective view of an embodiment of an axisymmetric light emitting diode of the present invention.
图 3是图 2的结合示意图。  Figure 3 is a schematic view of the combination of Figure 2.
图 4是沿图 3中 A- A剖面线的剖视图。  Figure 4 is a cross-sectional view taken along line A-A of Figure 3;
图 5是图 2的等效电路图。  Figure 5 is an equivalent circuit diagram of Figure 2.
图 6是本发明的轴对称发光二极管的另一种实施例的分解立体图 图 7是图 6的结合示意图。  Fig. 6 is an exploded perspective view showing another embodiment of the axisymmetric light emitting diode of the present invention. Fig. 7 is a combined schematic view of Fig. 6.
图 8是图 7的等效电路图。  Figure 8 is an equivalent circuit diagram of Figure 7.
S10: 提供一基板 S20:形成多个发光区域  S10: providing a substrate S20: forming a plurality of light emitting regions
10 : 轴对称发光二极管 20 :基板  10 : Axisymmetric LED 20 : Substrate
21 : 轴心 22 :沟槽  21 : Axis 22 : Groove
23 : 绝缘层 30 :发光区域  23 : Insulation 30 : Light-emitting area
30, :次发光区域 40 :发光二极管  30, :Sub-lighting area 40: Light-emitting diode
41η: 型电极 42 : η型半导体层  41η: type electrode 42 : n-type semiconductor layer
43 : 主动层 44 : ρ型半导体层  43 : active layer 44 : p-type semiconductor layer
45ρ: 型电极 50 :导电材料 实现发明的最佳方式  45ρ: Type electrode 50: Conductive material The best way to achieve the invention
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功 效,以下结合附图及较佳实施例, 对依据本发明提出的轴对称发光二极管的 制造方法其具体实施方式、制造方法、步骤、特征及其功效,详细说明如后。  In order to further explain the technical means and efficacy of the present invention for achieving the intended purpose of the invention, the following describes the specific embodiment and manufacturing method of the method for manufacturing the axisymmetric light emitting diode according to the present invention with reference to the accompanying drawings and preferred embodiments. The steps, characteristics and efficacy are described in detail later.
图 1 是本发明轴对称发光二极管的制造方法的较佳实施例的流程图。 图 2是本发明的轴对称发光二极管 10的一种实施例的分解立体图。 图 3是 图 1的结合示意图。 图 4是沿图 3中 A- Α剖面线的剖视图。 图 5是图 2的 等效电路图。 图 6是本发明的轴对称发光二极管 10的另一种实施例的分解 立体图。 图 7是图 6的结合示意图。 图 8是图 7的等效电路图。  BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart showing a preferred embodiment of a method of fabricating an axisymmetric light emitting diode of the present invention. 2 is an exploded perspective view of an embodiment of the axisymmetric light emitting diode 10 of the present invention. Figure 3 is a schematic view of the combination of Figure 1. Figure 4 is a cross-sectional view taken along the line A- Α in Figure 3. Figure 5 is an equivalent circuit diagram of Figure 2. Fig. 6 is an exploded perspective view showing another embodiment of the axisymmetric light emitting diode 10 of the present invention. Figure 7 is a schematic view of the combination of Figure 6. Figure 8 is an equivalent circuit diagram of Figure 7.
如图 1所示,本发明较佳实施例的轴对称发光二极管 10的制造方法,其 包括下列步骤: 提供一基板 S10; 以及形成多个发光区域 S20。  As shown in FIG. 1, a method of manufacturing an axisymmetric LED 10 according to a preferred embodiment of the present invention includes the steps of: providing a substrate S10; and forming a plurality of light emitting regions S20.
上述的提供一基板 S10:如图 2及图 3所示,基板 20是具有一轴心 21。 且基板 20的材质是可以为蓝宝石、 氮化镓、 氮化铝……等。  The above provides a substrate S10: as shown in Figs. 2 and 3, the substrate 20 has an axis 21. The material of the substrate 20 may be sapphire, gallium nitride, aluminum nitride, or the like.
上述的形成多个发光区域 S20: 如图 2所示, 多个发光区域 30是以基 板 20的轴心 21为中心, 依轴对称方式形成于基板 20上, 例如: 形成多个 圓形发光区域 30, 并以基板 20的轴心 21为中心, 依同心圆方式排列。 且 如图 2所示,基板 20是可以藉由蚀刻的方式形成多个沟槽 22, 并同时被区 分成多个圓形发光区域 30。 又在每一沟槽 22上方覆盖有绝缘层 23, 用以 使得每一发光区域 30彼此相互绝缘。  The plurality of light-emitting regions S20 are formed as described above. As shown in FIG. 2, the plurality of light-emitting regions 30 are formed on the substrate 20 in an axisymmetric manner centering on the axis 21 of the substrate 20, for example, forming a plurality of circular light-emitting regions. 30, and arranged in a concentric manner centering on the axis 21 of the substrate 20. As shown in FIG. 2, the substrate 20 is formed by etching to form a plurality of trenches 22, and is simultaneously divided into a plurality of circular light-emitting regions 30. Further, an insulating layer 23 is covered over each of the trenches 22 to insulate each of the light-emitting regions 30 from each other.
如图 3所示, 基板 20上的每一发光区域 30是分别具有至少一发光二 极管 40,且发光二极管 40是可以为由一 n型电极 41、一 n型半导体层 42、 一主动层 43、 一 p型半导体层 44与一 p型电极 45所构成, 且 p型电极 45 可以为一透明电极, 藉以增加出光面积。 As shown in FIG. 3, each of the light emitting regions 30 on the substrate 20 has at least one light emitting light respectively. The pole tube 40 and the light emitting diode 40 may be composed of an n-type electrode 41, an n-type semiconductor layer 42, an active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45, and the p-type electrode 45 It can be a transparent electrode to increase the light output area.
如图 4所示,基板 20上的每一发光区域 30又可以再利用导电材料 50, 例如: 高导电系数的金属, 使得每一发光二极管 40以串联或并联方式电性 相连, 因此轴对称发光二极管 10是可以承受高电压或高电流的负载。  As shown in FIG. 4, each of the light-emitting regions 30 on the substrate 20 can reuse the conductive material 50, for example, a metal having high conductivity, such that each of the light-emitting diodes 40 is electrically connected in series or in parallel, and thus the axisymmetric light is emitted. The diode 10 is a load that can withstand high voltage or high current.
当使用导电材料 50使得每一发光区域 30中的每一发光二极管 40形成 串联的电路结构时, 其等效电路图是如图 5 所示, 因此轴对称发光二极管 10所能够承受的工作电压是增加为单颗时的三倍, 所以可更广泛地应用于 曰常生活中。 When the conductive material 50 is used such that each of the light-emitting diodes 40 in each of the light-emitting regions 30 forms a circuit structure in series, the equivalent circuit diagram is as shown in FIG. 5, so that the operating voltage that the axis-symmetrical light-emitting diode 10 can withstand is It is three times as large as a single one, so it can be more widely used in everyday life.
除此之外, 轴对称方式排列使得基板 20上的每一发光区域 30中发光 二极管 40出光时, 皆以基板 20的轴心 21为出光轴, 所以轴对称发光二极 管 10出光时, 可呈现对称不分散的良好光型。 且轴对称的排列方式是可以 在有限的基板 20面积上,排列最多数量的发光区域 30, 使得可设置最多数 量的发光二极管 40, 因此进一步可提高整体的出光亮度。  In addition, the axisymmetric arrangement is such that when the light emitting diode 40 is emitted from each of the light emitting regions 30 on the substrate 20, the axis 21 of the substrate 20 is taken as the optical axis, so that the axisymmetric LED 10 can exhibit symmetry when it emits light. Good light type that does not disperse. The axisymmetric arrangement is such that a maximum number of light-emitting regions 30 can be arranged over a limited area of the substrate 20, so that a maximum number of light-emitting diodes 40 can be disposed, thereby further improving the overall light-emitting brightness.
如图 6所示,基板 20上的每一发光区域 30是可以进一步藉由在基板 20 上蚀刻的方式, 使得基板 20分割成多个等面积、 等间距且非矩形的次发光 区域 30, ,例如:多个梯形的次发光区域 30, ,且每一次发光区域 30, 是相 互绝缘且具有数量相等的发光二极管 40。  As shown in FIG. 6, each of the light-emitting regions 30 on the substrate 20 can be further etched on the substrate 20 such that the substrate 20 is divided into a plurality of equal-area, equally spaced, non-rectangular secondary light-emitting regions 30, For example, a plurality of trapezoidal sub-light-emitting regions 30, and each of the light-emitting regions 30, are insulated from each other and have an equal number of light-emitting diodes 40.
又次发光区域 30, 中的每一发光二极管 40亦可由一 n型电极 41、一 n 型半导体层 42、一主动层 43、一 p型半导体层 44与一 p型电极 45所构成, 且 p型电极 45可以为一透明电极, 使得增加出光面积。  Each of the light-emitting regions 30 of the second light-emitting region 30 may also be composed of an n-type electrode 41, an n-type semiconductor layer 42, an active layer 43, a p-type semiconductor layer 44 and a p-type electrode 45, and The type electrode 45 may be a transparent electrode to increase the light exit area.
如图 7所示,次发光区域 30, 中的每一发光二极管 40亦可以利用导电 材料 50彼此电性相连, 用以形成如图 8所示的串联及并联电路结构。 当将 次发光区域 30, 中多个发光二极管 40以串联及并联连接之后,使得轴对称 的发光二极管 10是可以承受较高电压及较高电流的输入,并扩大应用范围。  As shown in FIG. 7, each of the light-emitting diodes 40 can also be electrically connected to each other by a conductive material 50 to form a series and parallel circuit structure as shown in FIG. When the plurality of light-emitting diodes 40 in the sub-light-emitting region 30 are connected in series and in parallel, the axis-symmetrical light-emitting diode 10 is an input that can withstand higher voltages and higher currents, and expands the application range.
而每一次发光区域 30, 亦以基板 20的轴心 21为中心等间距排列,且每 一次发光区域 30, 可以为等面积。 因此当基板 20上的发光区域 30及次发 光区域 30, 中每一发光二极管 40 出光时, 是可以使得轴对称发光二极管 10形成对称且不分散的良好光型, 进一步可提升出光亮度。  Each of the light-emitting regions 30 is also arranged at equal intervals around the axis 21 of the substrate 20, and each of the light-emitting regions 30 may have an equal area. Therefore, when each of the light-emitting diodes 30 and the secondary light-emitting regions 30 on the substrate 20 emit light, the axisymmetric light-emitting diodes 10 can be formed into a symmetrical and non-dispersive good light pattern, and the light brightness can be further improved.
以上所述, 仅是本发明的较佳实施例而已, 并非对本发明作任何形式 上的限制, 虽然本发明已以较佳实施例揭露如上, 然而并非用以限定本发 明,任何熟悉本专业的技术人员, 在不脱离本发明技术方案范围内,当可利 用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但 凡是未脱离本发明技术方案内容, 依据本发明的技术实质对以上实施例所 作的任何简单修改、 等同变化与修饰,均仍属于本发明技术方案的范围内。  The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention. The skilled person can make some modifications or modifications to the equivalent embodiments by using the above-disclosed technical contents without departing from the technical scope of the present invention. It is still within the scope of the technical solution of the present invention to make any simple modifications, equivalent changes and modifications to the above embodiments.

Claims

权 利 要 求 Rights request
1、 一种轴对称发光二极管的制造方法,其特征在于其包括以下步骤: 提供一基板, 且该基板是具有一轴心; 以及 What is claimed is: 1. A method of fabricating an axisymmetric light emitting diode, comprising the steps of: providing a substrate, wherein the substrate has an axis;
形成多个发光区域, 其是以轴对称方式, 以该轴心为中心, 形成于该 基板上且相互绝缘, 又每一该发光区域是具有至少一发光二极管,且该些发 光二极管是相互电性相连。  Forming a plurality of light-emitting regions in an axisymmetric manner, centered on the axis, formed on the substrate and insulated from each other, and each of the light-emitting regions has at least one light-emitting diode, and the light-emitting diodes are electrically connected to each other Sexual connection.
2、 根据权利要求 1 所述的轴对称发光二极管的制造方法,其特征在于 其中所述的发光区域是为多个圆形发光区域。  2. The method of manufacturing an axisymmetric light emitting diode according to claim 1, wherein the light emitting region is a plurality of circular light emitting regions.
3、 根据权利要求 1 所述的轴对称发光二极管的制造方法,其特征在于 其中所述的发光区域是进一步分割成多个等面积且等间距的次发光区域, 且每一该次发光区域中的该发光二极管是数量相等。  3. The method of manufacturing an axisymmetric light emitting diode according to claim 1, wherein the light emitting region is further divided into a plurality of equal-area and equally spaced secondary light-emitting regions, and each of the light-emitting regions The LEDs are equal in number.
4、 根据权利要求 3所述的轴对称发光二极管的制造方法,其特征在于 其中所述的次发光区域是为多个非矩形次发光区域。  4. The method of manufacturing an axisymmetric light emitting diode according to claim 3, wherein the secondary light emitting region is a plurality of non-rectangular secondary light emitting regions.
PCT/CN2008/001640 2008-09-23 2008-09-23 A method of manufacturing the leds with symmetry axis WO2010034132A1 (en)

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