JP2018011005A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2018011005A JP2018011005A JP2016140001A JP2016140001A JP2018011005A JP 2018011005 A JP2018011005 A JP 2018011005A JP 2016140001 A JP2016140001 A JP 2016140001A JP 2016140001 A JP2016140001 A JP 2016140001A JP 2018011005 A JP2018011005 A JP 2018011005A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 230000005855 radiation Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48155—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48157—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
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- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
本発明の実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置におけるワイヤ7,9が接続されていない位置の断面図であり、図2は、ワイヤ7,9が接続された位置の断面図である。図3は、電極6,8におけるケース10で囲まれた内側の領域に存在する部分の斜視図である。
次に、実施の形態2に係る半導体装置について説明する。図4は、実施の形態2に係る半導体装置の断面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態3に係る半導体装置について説明する。図8は、実施の形態3の図1相当図であり、図9は、実施の形態3の図4相当図である。なお、実施の形態3において、実施の形態1,2で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (4)
- 放熱板と、
前記放熱板上に配置された絶縁基板と、
前記絶縁基板上に配置された半導体素子と、
前記放熱板の上面側、前記絶縁基板および半導体素子を囲む樹脂製のケースと、
前記ケースで囲まれた内側の領域に存在する部分を有し、当該部分の一方面にワイヤを介して前記半導体素子と電気的に接続された電極と、
を備え、
前記電極における前記ケースで囲まれた内側の領域に存在する部分において、前記ワイヤが接続された位置の他方面に、前記ケースの内壁から前記放熱板の上面側に延びる樹脂部が配置され、
前記電極における前記ケースで囲まれた内側の領域に存在する部分において、前記ワイヤが接続されていない位置の他方面に、前記樹脂部よりも高い熱伝導特性を有する熱伝導部材が配置された、半導体装置。 - 放熱板と、
前記放熱板上に配置された絶縁基板と、
前記絶縁基板上に配置された半導体素子と、
前記放熱板の上面側、前記絶縁基板および半導体素子を囲む樹脂製のケースと、
前記ケースで囲まれた内側の領域に存在する部分を有し、当該部分の一方面にワイヤを介して前記半導体素子と電気的に接続された電極と、
を備え、
前記電極における前記ケースで囲まれた内側の領域に存在する部分の他方面は凹凸状に形成され、
前記電極における前記ケースで囲まれた内側の領域に存在する部分の他方面に、前記ケースの内壁から前記放熱板の上面側に延び、かつ、当該部分の他方面に嵌合する凹凸部を有する樹脂部が配置された、半導体装置。 - 前記電極は主電極である、請求項2記載の半導体装置。
- 前記放熱板および前記絶縁基板に代えて、下部に放熱部を有する絶縁基板を備えた、請求項1から請求項3のいずれか1つに記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016140001A JP6598740B2 (ja) | 2016-07-15 | 2016-07-15 | 半導体装置 |
US15/456,755 US10121719B2 (en) | 2016-07-15 | 2017-03-13 | Semiconductor device |
DE102017211606.4A DE102017211606A1 (de) | 2016-07-15 | 2017-07-07 | Halbleitervorrichtung |
CN201710575698.3A CN107622987B (zh) | 2016-07-15 | 2017-07-14 | 半导体装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2016140001A JP6598740B2 (ja) | 2016-07-15 | 2016-07-15 | 半導体装置 |
Publications (3)
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JP2018011005A true JP2018011005A (ja) | 2018-01-18 |
JP2018011005A5 JP2018011005A5 (ja) | 2018-12-20 |
JP6598740B2 JP6598740B2 (ja) | 2019-10-30 |
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US (1) | US10121719B2 (ja) |
JP (1) | JP6598740B2 (ja) |
CN (1) | CN107622987B (ja) |
DE (1) | DE102017211606A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161083A (ja) * | 2018-03-15 | 2019-09-19 | 富士電機株式会社 | 半導体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102019135271A1 (de) * | 2019-12-19 | 2021-06-24 | Seg Automotive Germany Gmbh | Leistungsmodul, Stromrichter und Kraftfahrzeugkomponente |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004134518A (ja) * | 2002-10-09 | 2004-04-30 | Nissan Motor Co Ltd | 電子部品、電子部品の製造方法及び製造装置 |
WO2015012181A1 (ja) * | 2013-07-22 | 2015-01-29 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP2015130456A (ja) * | 2014-01-09 | 2015-07-16 | 三菱電機株式会社 | 半導体装置 |
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JP2816239B2 (ja) * | 1990-06-15 | 1998-10-27 | 株式会社日立製作所 | 樹脂封止型半導体装置 |
JP2000113428A (ja) * | 1998-10-08 | 2000-04-21 | Tdk Corp | 薄膜デバイス、薄膜磁気ヘッドおよび磁気抵抗効果素子並びにそれらの製造方法 |
JP2002246515A (ja) * | 2001-02-20 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置 |
JP5182274B2 (ja) | 2009-11-17 | 2013-04-17 | 三菱電機株式会社 | パワー半導体装置 |
US8477492B2 (en) * | 2010-08-19 | 2013-07-02 | Apple Inc. | Formed PCB |
JP2014187346A (ja) * | 2013-02-22 | 2014-10-02 | Tokyo Electron Ltd | 焼結銀被覆膜の作製方法及び焼成装置及び半導体装置 |
DE102014114808B4 (de) * | 2014-10-13 | 2018-03-08 | Infineon Technologies Ag | Elektronikmodul und Verfahren zur Herstellung eines Elektronikmoduls |
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2016
- 2016-07-15 JP JP2016140001A patent/JP6598740B2/ja active Active
-
2017
- 2017-03-13 US US15/456,755 patent/US10121719B2/en active Active
- 2017-07-07 DE DE102017211606.4A patent/DE102017211606A1/de active Pending
- 2017-07-14 CN CN201710575698.3A patent/CN107622987B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004134518A (ja) * | 2002-10-09 | 2004-04-30 | Nissan Motor Co Ltd | 電子部品、電子部品の製造方法及び製造装置 |
WO2015012181A1 (ja) * | 2013-07-22 | 2015-01-29 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP2015130456A (ja) * | 2014-01-09 | 2015-07-16 | 三菱電機株式会社 | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161083A (ja) * | 2018-03-15 | 2019-09-19 | 富士電機株式会社 | 半導体装置 |
JP7183551B2 (ja) | 2018-03-15 | 2022-12-06 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
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US10121719B2 (en) | 2018-11-06 |
DE102017211606A1 (de) | 2018-01-18 |
CN107622987B (zh) | 2020-04-21 |
US20180019181A1 (en) | 2018-01-18 |
JP6598740B2 (ja) | 2019-10-30 |
CN107622987A (zh) | 2018-01-23 |
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