JP2011003636A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2011003636A JP2011003636A JP2009144108A JP2009144108A JP2011003636A JP 2011003636 A JP2011003636 A JP 2011003636A JP 2009144108 A JP2009144108 A JP 2009144108A JP 2009144108 A JP2009144108 A JP 2009144108A JP 2011003636 A JP2011003636 A JP 2011003636A
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- semiconductor device
- semiconductor
- metal plate
- semiconductor element
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000012212 insulator Substances 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 abstract description 14
- 229910000679 solder Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】半導体素子12と、半導体素子12に接続される複数の金属板13,14と、各金属板13,14に各々接続される複数の端子部23,24とを、該金属板13,14の一部と端子部23,24の一部が各々露出するように封止部15で封止し、各端子部23,24における封止部15から露出するように突出した部分のうち封止部15側となる基端側の部分を絶縁体25で被覆する。
【選択図】図2
Description
請求項1に記載の発明は、半導体素子と、該半導体素子に接続される複数の金属導体と、該各金属導体に接続される複数の電極とを備え、これらを前記金属導体の一部と前記電極の一部が各々露出するように樹脂材でモールドした半導体装置であって、前記各電極における前記樹脂材から露出するように突出した部分のうち前記樹脂材側となる基端側部分を絶縁体で被覆することを要旨とする。
図1及び図2に示すように、第1の半導体装置11は、第1の半導体素子12と、該第1の半導体素子12に熱的及び電気的に接続された銅などの金属導体としての2枚の金属板13,14とが、エポキシ樹脂等の樹脂材によりモールドされて形成される第1の封止部15により封止されている。
図5及び図6には、上記実施形態に対する比較例として、端子部が絶縁体に被覆されていない半導体装置を示す。
(1)半導体素子12をモールドした封止部15から露出するように突出した各端子部23,24における封止部15側となる基端側の部分がそれぞれ絶縁体25に被覆されているため、端子部23,24の配置間隔を狭くしても各端子部23,24の沿面距離Eは絶縁体25に沿って延長されることになる。したがって、端子部23,24間の沿面距離Eを確保し、小型化が可能な半導体装置11を提供することができる。
なお、上記実施形態は以下のように変更してもよい。
Claims (2)
- 半導体素子と、
該半導体素子に接続される複数の金属導体と、
該各金属導体に接続される複数の電極と
を備え、
これらを前記金属導体の一部と前記電極の一部が各々露出するように樹脂材でモールドした半導体装置であって、
前記各電極における前記樹脂材から露出するように突出した部分のうち前記樹脂材側となる基端側の部分を絶縁体で被覆することを特徴とする半導体装置。 - 前記金属導体には、隣接する他の半導体装置と連結される連結部が設けられ、
該連結部が前記他の半導体装置の連結部と連結した場合に、該連結部が設けられた前記金属導体同士が電気的に接続されることを特徴とする請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009144108A JP5544767B2 (ja) | 2009-06-17 | 2009-06-17 | 半導体装置 |
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JP2009144108A JP5544767B2 (ja) | 2009-06-17 | 2009-06-17 | 半導体装置 |
Publications (2)
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JP2011003636A true JP2011003636A (ja) | 2011-01-06 |
JP5544767B2 JP5544767B2 (ja) | 2014-07-09 |
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JP2009144108A Expired - Fee Related JP5544767B2 (ja) | 2009-06-17 | 2009-06-17 | 半導体装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014096412A (ja) * | 2012-11-07 | 2014-05-22 | Toyota Motor Corp | 半導体モジュール |
JP2016197677A (ja) * | 2015-04-06 | 2016-11-24 | 三菱電機株式会社 | パワー半導体装置および車載用回転電機の駆動装置 |
JP2019153753A (ja) * | 2018-03-06 | 2019-09-12 | トヨタ自動車株式会社 | 半導体装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51141460U (ja) * | 1975-05-08 | 1976-11-15 | ||
JPH05190735A (ja) * | 1992-01-14 | 1993-07-30 | Mitsubishi Electric Corp | 半導体装置 |
JP2001308245A (ja) * | 2000-04-25 | 2001-11-02 | Denso Corp | 冷媒冷却型両面冷却半導体装置 |
JP2004193476A (ja) * | 2002-12-13 | 2004-07-08 | Denso Corp | 半導体装置 |
JP2004296837A (ja) * | 2003-03-27 | 2004-10-21 | Denso Corp | 半導体装置 |
JP2006134990A (ja) * | 2004-11-04 | 2006-05-25 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2008042074A (ja) * | 2006-08-09 | 2008-02-21 | Nissan Motor Co Ltd | 半導体装置及び電力変換装置 |
JP2008166626A (ja) * | 2006-12-29 | 2008-07-17 | Denso Corp | 半導体装置 |
-
2009
- 2009-06-17 JP JP2009144108A patent/JP5544767B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51141460U (ja) * | 1975-05-08 | 1976-11-15 | ||
JPH05190735A (ja) * | 1992-01-14 | 1993-07-30 | Mitsubishi Electric Corp | 半導体装置 |
JP2001308245A (ja) * | 2000-04-25 | 2001-11-02 | Denso Corp | 冷媒冷却型両面冷却半導体装置 |
JP2004193476A (ja) * | 2002-12-13 | 2004-07-08 | Denso Corp | 半導体装置 |
JP2004296837A (ja) * | 2003-03-27 | 2004-10-21 | Denso Corp | 半導体装置 |
JP2006134990A (ja) * | 2004-11-04 | 2006-05-25 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP2008042074A (ja) * | 2006-08-09 | 2008-02-21 | Nissan Motor Co Ltd | 半導体装置及び電力変換装置 |
JP2008166626A (ja) * | 2006-12-29 | 2008-07-17 | Denso Corp | 半導体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014096412A (ja) * | 2012-11-07 | 2014-05-22 | Toyota Motor Corp | 半導体モジュール |
JP2016197677A (ja) * | 2015-04-06 | 2016-11-24 | 三菱電機株式会社 | パワー半導体装置および車載用回転電機の駆動装置 |
JP2019153753A (ja) * | 2018-03-06 | 2019-09-12 | トヨタ自動車株式会社 | 半導体装置 |
JP7147186B2 (ja) | 2018-03-06 | 2022-10-05 | 株式会社デンソー | 半導体装置 |
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JP5544767B2 (ja) | 2014-07-09 |
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