CN115084182A - 半导体元件及其制造方法、半导体装置及显示面板 - Google Patents

半导体元件及其制造方法、半导体装置及显示面板 Download PDF

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Publication number
CN115084182A
CN115084182A CN202210259482.7A CN202210259482A CN115084182A CN 115084182 A CN115084182 A CN 115084182A CN 202210259482 A CN202210259482 A CN 202210259482A CN 115084182 A CN115084182 A CN 115084182A
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China
Prior art keywords
semiconductor
metal element
layer
semiconductor layer
type
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Pending
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CN202210259482.7A
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English (en)
Chinese (zh)
Inventor
谢明勋
李佑祖
薛惟仁
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Epistar Corp
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Epistar Corp
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Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN115084182A publication Critical patent/CN115084182A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Led Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
CN202210259482.7A 2021-03-16 2022-03-16 半导体元件及其制造方法、半导体装置及显示面板 Pending CN115084182A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/203,293 US11894489B2 (en) 2021-03-16 2021-03-16 Semiconductor device, semiconductor component and display panel including the same
US17/203,293 2021-03-16

Publications (1)

Publication Number Publication Date
CN115084182A true CN115084182A (zh) 2022-09-20

Family

ID=83114734

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210259482.7A Pending CN115084182A (zh) 2021-03-16 2022-03-16 半导体元件及其制造方法、半导体装置及显示面板

Country Status (6)

Country Link
US (2) US11894489B2 (https=)
JP (1) JP2022142782A (https=)
KR (1) KR20220129490A (https=)
CN (1) CN115084182A (https=)
DE (1) DE102022105994A1 (https=)
TW (1) TW202239017A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116130572A (zh) * 2023-04-18 2023-05-16 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115172557A (zh) * 2022-08-03 2022-10-11 天津三安光电有限公司 发光二极管，发光二极管封装体和发光装置

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US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP4581540B2 (ja) * 2003-06-30 2010-11-17 日亜化学工業株式会社 半導体発光素子とそれを用いた発光装置
JP5255759B2 (ja) * 2005-11-14 2013-08-07 パロ・アルト・リサーチ・センター・インコーポレーテッド 半導体デバイス用超格子歪緩衝層
JP2008034822A (ja) * 2006-06-28 2008-02-14 Nichia Chem Ind Ltd 半導体発光素子
TWI378573B (en) * 2007-10-31 2012-12-01 Young Lighting Technology Corp Light emitting diode package
KR101221281B1 (ko) * 2008-03-13 2013-01-11 쇼와 덴코 가부시키가이샤 반도체 발광 소자 및 그 제조 방법
JP5334601B2 (ja) * 2009-01-21 2013-11-06 株式会社東芝 半導体発光ダイオード素子及び半導体発光装置
US8592847B2 (en) 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
KR20140146467A (ko) 2013-06-17 2014-12-26 한국전자통신연구원 발광 다이오드 및 그 제조 방법
KR102512027B1 (ko) * 2016-03-08 2023-03-21 엘지이노텍 주식회사 반도체 소자, 표시패널, 표시장치 및 표시패널 제조방법
KR101763072B1 (ko) * 2016-06-09 2017-08-04 고려대학교 산학협력단 광 추출 효율 및 전류 주입 효율 개선을 위한 led 소자
CN108336194A (zh) * 2018-01-11 2018-07-27 太原理工大学 一种led电极的制备方法
KR102552655B1 (ko) 2018-08-10 2023-07-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
KR102616245B1 (ko) * 2018-10-05 2023-12-21 삼성디스플레이 주식회사 디스플레이 장치
JP7603260B2 (ja) * 2019-03-29 2024-12-20 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置
US11152540B2 (en) * 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
TWI715437B (zh) 2020-02-12 2021-01-01 光鋐科技股份有限公司 紫外光發光二極體及其製造方法
CN115315820A (zh) * 2020-03-20 2022-11-08 传感器电子技术股份有限公司 光学损失减少的光电子器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116130572A (zh) * 2023-04-18 2023-05-16 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Also Published As

Publication number Publication date
US20220302346A1 (en) 2022-09-22
TW202239017A (zh) 2022-10-01
US12426411B2 (en) 2025-09-23
JP2022142782A (ja) 2022-09-30
US11894489B2 (en) 2024-02-06
DE102022105994A1 (de) 2022-09-22
KR20220129490A (ko) 2022-09-23
US20240186449A1 (en) 2024-06-06

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Country or region after: Taiwan, China

Address after: Hsinchu City, Taiwan, China

Applicant after: Fucai Optoelectronics Co., Ltd.

Address before: Hsinchu City, Taiwan, China

Applicant before: EPISTAR Corp.

Country or region before: Taiwan, China