JP2022142782A - 半導体素子、該半導体素子を含む半導体装置及び表示パネル - Google Patents

半導体素子、該半導体素子を含む半導体装置及び表示パネル Download PDF

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JP2022142782A
JP2022142782A JP2022040869A JP2022040869A JP2022142782A JP 2022142782 A JP2022142782 A JP 2022142782A JP 2022040869 A JP2022040869 A JP 2022040869A JP 2022040869 A JP2022040869 A JP 2022040869A JP 2022142782 A JP2022142782 A JP 2022142782A
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semiconductor
layer
semiconductor device
metal element
type
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JP2022142782A5 (https=
Inventor
シエ，ミン－シュン
Mn-Shun Shie
リー，ユ－ツ
Yu-Tsu Lee
シュエ，ウェイ－ジェン
Wei-Jen Hsueh
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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  • Led Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
JP2022040869A 2021-03-16 2022-03-16 半導体素子、該半導体素子を含む半導体装置及び表示パネル Pending JP2022142782A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/203,293 US11894489B2 (en) 2021-03-16 2021-03-16 Semiconductor device, semiconductor component and display panel including the same
US17/203293 2021-03-16

Publications (2)

Publication Number Publication Date
JP2022142782A true JP2022142782A (ja) 2022-09-30
JP2022142782A5 JP2022142782A5 (https=) 2025-03-19

Family

ID=83114734

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JP2022040869A Pending JP2022142782A (ja) 2021-03-16 2022-03-16 半導体素子、該半導体素子を含む半導体装置及び表示パネル

Country Status (6)

Country Link
US (2) US11894489B2 (https=)
JP (1) JP2022142782A (https=)
KR (1) KR20220129490A (https=)
CN (1) CN115084182A (https=)
DE (1) DE102022105994A1 (https=)
TW (1) TW202239017A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115172557A (zh) * 2022-08-03 2022-10-11 天津三安光电有限公司 发光二极管，发光二极管封装体和发光装置
CN116130572A (zh) * 2023-04-18 2023-05-16 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039284A (ja) * 2003-06-30 2005-02-10 Nichia Chem Ind Ltd 半導体発光素子とそれを用いた発光装置
JP2007142397A (ja) * 2005-11-14 2007-06-07 Palo Alto Research Center Inc 半導体デバイス用超格子歪緩衝層
JP2008034822A (ja) * 2006-06-28 2008-02-14 Nichia Chem Ind Ltd 半導体発光素子
WO2009113659A1 (ja) * 2008-03-13 2009-09-17 昭和電工株式会社 半導体発光素子及びその製造方法
JP2010171142A (ja) * 2009-01-21 2010-08-05 Toshiba Corp 半導体発光素子及び半導体発光装置
US20170358714A1 (en) * 2016-06-09 2017-12-14 Korea University Research And Business Foundation Light-emitting diode device for enhancing light extraction efficiency and current injection efficiency
CN108336194A (zh) * 2018-01-11 2018-07-27 太原理工大学 一种led电极的制备方法

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US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
TWI378573B (en) * 2007-10-31 2012-12-01 Young Lighting Technology Corp Light emitting diode package
US8592847B2 (en) 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
KR20140146467A (ko) 2013-06-17 2014-12-26 한국전자통신연구원 발광 다이오드 및 그 제조 방법
KR102512027B1 (ko) * 2016-03-08 2023-03-21 엘지이노텍 주식회사 반도체 소자, 표시패널, 표시장치 및 표시패널 제조방법
KR102552655B1 (ko) 2018-08-10 2023-07-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
KR102616245B1 (ko) * 2018-10-05 2023-12-21 삼성디스플레이 주식회사 디스플레이 장치
JP7603260B2 (ja) * 2019-03-29 2024-12-20 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置
US11152540B2 (en) * 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
TWI715437B (zh) 2020-02-12 2021-01-01 光鋐科技股份有限公司 紫外光發光二極體及其製造方法
CN115315820A (zh) * 2020-03-20 2022-11-08 传感器电子技术股份有限公司 光学损失减少的光电子器件

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039284A (ja) * 2003-06-30 2005-02-10 Nichia Chem Ind Ltd 半導体発光素子とそれを用いた発光装置
JP2007142397A (ja) * 2005-11-14 2007-06-07 Palo Alto Research Center Inc 半導体デバイス用超格子歪緩衝層
JP2008034822A (ja) * 2006-06-28 2008-02-14 Nichia Chem Ind Ltd 半導体発光素子
WO2009113659A1 (ja) * 2008-03-13 2009-09-17 昭和電工株式会社 半導体発光素子及びその製造方法
JP2010171142A (ja) * 2009-01-21 2010-08-05 Toshiba Corp 半導体発光素子及び半導体発光装置
US20170358714A1 (en) * 2016-06-09 2017-12-14 Korea University Research And Business Foundation Light-emitting diode device for enhancing light extraction efficiency and current injection efficiency
CN108336194A (zh) * 2018-01-11 2018-07-27 太原理工大学 一种led电极的制备方法

Also Published As

Publication number Publication date
US20220302346A1 (en) 2022-09-22
TW202239017A (zh) 2022-10-01
US12426411B2 (en) 2025-09-23
US11894489B2 (en) 2024-02-06
DE102022105994A1 (de) 2022-09-22
KR20220129490A (ko) 2022-09-23
US20240186449A1 (en) 2024-06-06
CN115084182A (zh) 2022-09-20

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