DE102022105994A1 - Halbleitervorrichtung, verfahren zu ihrer herstellung, halbleiterkomponente und anzeigetafel, die sie enthält - Google Patents

Halbleitervorrichtung, verfahren zu ihrer herstellung, halbleiterkomponente und anzeigetafel, die sie enthält Download PDF

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Publication number
DE102022105994A1
DE102022105994A1 DE102022105994.4A DE102022105994A DE102022105994A1 DE 102022105994 A1 DE102022105994 A1 DE 102022105994A1 DE 102022105994 A DE102022105994 A DE 102022105994A DE 102022105994 A1 DE102022105994 A1 DE 102022105994A1
Authority
DE
Germany
Prior art keywords
type
layer
semiconductor
metal element
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102022105994.4A
Other languages
German (de)
English (en)
Inventor
Min-Hsun Hsieh
Yu-Tsu Lee
Wei-Jen Hsueh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ENNOSTAR CORPORATION, TW
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of DE102022105994A1 publication Critical patent/DE102022105994A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
DE102022105994.4A 2021-03-16 2022-03-15 Halbleitervorrichtung, verfahren zu ihrer herstellung, halbleiterkomponente und anzeigetafel, die sie enthält Pending DE102022105994A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/203,293 US11894489B2 (en) 2021-03-16 2021-03-16 Semiconductor device, semiconductor component and display panel including the same
US17/203,293 2021-03-16

Publications (1)

Publication Number Publication Date
DE102022105994A1 true DE102022105994A1 (de) 2022-09-22

Family

ID=83114734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102022105994.4A Pending DE102022105994A1 (de) 2021-03-16 2022-03-15 Halbleitervorrichtung, verfahren zu ihrer herstellung, halbleiterkomponente und anzeigetafel, die sie enthält

Country Status (6)

Country Link
US (2) US11894489B2 (https=)
JP (1) JP2022142782A (https=)
KR (1) KR20220129490A (https=)
CN (1) CN115084182A (https=)
DE (1) DE102022105994A1 (https=)
TW (1) TW202239017A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115172557A (zh) * 2022-08-03 2022-10-11 天津三安光电有限公司 发光二极管，发光二极管封装体和发光装置
CN116130572A (zh) * 2023-04-18 2023-05-16 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP4581540B2 (ja) * 2003-06-30 2010-11-17 日亜化学工業株式会社 半導体発光素子とそれを用いた発光装置
JP5255759B2 (ja) * 2005-11-14 2013-08-07 パロ・アルト・リサーチ・センター・インコーポレーテッド 半導体デバイス用超格子歪緩衝層
JP2008034822A (ja) * 2006-06-28 2008-02-14 Nichia Chem Ind Ltd 半導体発光素子
TWI378573B (en) * 2007-10-31 2012-12-01 Young Lighting Technology Corp Light emitting diode package
KR101221281B1 (ko) * 2008-03-13 2013-01-11 쇼와 덴코 가부시키가이샤 반도체 발광 소자 및 그 제조 방법
JP5334601B2 (ja) * 2009-01-21 2013-11-06 株式会社東芝 半導体発光ダイオード素子及び半導体発光装置
US8592847B2 (en) 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
KR20140146467A (ko) 2013-06-17 2014-12-26 한국전자통신연구원 발광 다이오드 및 그 제조 방법
KR102512027B1 (ko) * 2016-03-08 2023-03-21 엘지이노텍 주식회사 반도체 소자, 표시패널, 표시장치 및 표시패널 제조방법
KR101763072B1 (ko) * 2016-06-09 2017-08-04 고려대학교 산학협력단 광 추출 효율 및 전류 주입 효율 개선을 위한 led 소자
CN108336194A (zh) * 2018-01-11 2018-07-27 太原理工大学 一种led电极的制备方法
KR102552655B1 (ko) 2018-08-10 2023-07-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
KR102616245B1 (ko) * 2018-10-05 2023-12-21 삼성디스플레이 주식회사 디스플레이 장치
WO2020202758A1 (ja) * 2019-03-29 2020-10-08 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置
US11152540B2 (en) * 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
TWI715437B (zh) * 2020-02-12 2021-01-01 光鋐科技股份有限公司 紫外光發光二極體及其製造方法
EP4107792A4 (en) * 2020-03-20 2024-03-27 Sensor Electronic Technology, Inc. OPTOELECTRONIC DEVICE WITH REDUCED OPTICAL LOSS

Also Published As

Publication number Publication date
US12426411B2 (en) 2025-09-23
US20240186449A1 (en) 2024-06-06
US20220302346A1 (en) 2022-09-22
US11894489B2 (en) 2024-02-06
TW202239017A (zh) 2022-10-01
CN115084182A (zh) 2022-09-20
JP2022142782A (ja) 2022-09-30
KR20220129490A (ko) 2022-09-23

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033620000

Ipc: H10H0020857000

R012 Request for examination validly filed
R081 Change of applicant/patentee

Owner name: ENNOSTAR CORPORATION, TW

Free format text: FORMER OWNER: EPISTAR CORPORATION, HSINCHU, TW