JP2020102629A5 - - Google Patents

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Publication number
JP2020102629A5
JP2020102629A5 JP2019231018A JP2019231018A JP2020102629A5 JP 2020102629 A5 JP2020102629 A5 JP 2020102629A5 JP 2019231018 A JP2019231018 A JP 2019231018A JP 2019231018 A JP2019231018 A JP 2019231018A JP 2020102629 A5 JP2020102629 A5 JP 2020102629A5
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JP
Japan
Prior art keywords
semiconductor device
layer
semiconductor
electrode
contact layer
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JP2019231018A
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English (en)
Japanese (ja)
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JP7516040B2 (ja
JP2020102629A (ja
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Publication of JP2020102629A publication Critical patent/JP2020102629A/ja
Publication of JP2020102629A5 publication Critical patent/JP2020102629A5/ja
Priority to JP2024107145A priority Critical patent/JP7708938B2/ja
Application granted granted Critical
Publication of JP7516040B2 publication Critical patent/JP7516040B2/ja
Priority to JP2025112755A priority patent/JP2025133859A/ja
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JP2019231018A 2018-12-24 2019-12-23 半導体素子 Active JP7516040B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024107145A JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子
JP2025112755A JP2025133859A (ja) 2018-12-24 2025-07-03 半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW107146841 2018-12-24
TW107146841 2018-12-24

Related Child Applications (1)

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JP2024107145A Division JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子

Publications (3)

Publication Number Publication Date
JP2020102629A JP2020102629A (ja) 2020-07-02
JP2020102629A5 true JP2020102629A5 (https=) 2022-12-16
JP7516040B2 JP7516040B2 (ja) 2024-07-16

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ID=71098914

Family Applications (3)

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JP2019231018A Active JP7516040B2 (ja) 2018-12-24 2019-12-23 半導体素子
JP2024107145A Active JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子
JP2025112755A Pending JP2025133859A (ja) 2018-12-24 2025-07-03 半導体素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024107145A Active JP7708938B2 (ja) 2018-12-24 2024-07-03 半導体素子
JP2025112755A Pending JP2025133859A (ja) 2018-12-24 2025-07-03 半導体素子

Country Status (4)

Country Link
US (1) US11239388B2 (https=)
JP (3) JP7516040B2 (https=)
CN (2) CN120224869A (https=)
TW (3) TWI912224B (https=)

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TWI912224B (zh) * 2018-12-24 2026-01-11 晶元光電股份有限公司 半導體元件
TWI830100B (zh) * 2021-12-13 2024-01-21 晶元光電股份有限公司 半導體光電元件
TWI911536B (zh) * 2023-06-13 2026-01-11 晶元光電股份有限公司 半導體元件
US20250048795A1 (en) * 2023-07-11 2025-02-06 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
JP2025027704A (ja) * 2023-08-17 2025-02-28 ウシオ電機株式会社 赤外ｌｅｄ素子

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