CN120224869A - 半导体元件 - Google Patents

半导体元件 Download PDF

Info

Publication number
CN120224869A
CN120224869A CN202411187359.4A CN202411187359A CN120224869A CN 120224869 A CN120224869 A CN 120224869A CN 202411187359 A CN202411187359 A CN 202411187359A CN 120224869 A CN120224869 A CN 120224869A
Authority
CN
China
Prior art keywords
layer
type semiconductor
semiconductor
semiconductor device
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202411187359.4A
Other languages
English (en)
Chinese (zh)
Inventor
陈孟扬
李荣仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN120224869A publication Critical patent/CN120224869A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Lasers (AREA)
CN202411187359.4A 2018-12-24 2019-12-23 半导体元件 Pending CN120224869A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW107146841 2018-12-24
TW107146841 2018-12-24
CN201911334812.9A CN111354842B (zh) 2018-12-24 2019-12-23 半导体元件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201911334812.9A Division CN111354842B (zh) 2018-12-24 2019-12-23 半导体元件

Publications (1)

Publication Number Publication Date
CN120224869A true CN120224869A (zh) 2025-06-27

Family

ID=71098914

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202411187359.4A Pending CN120224869A (zh) 2018-12-24 2019-12-23 半导体元件
CN201911334812.9A Active CN111354842B (zh) 2018-12-24 2019-12-23 半导体元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201911334812.9A Active CN111354842B (zh) 2018-12-24 2019-12-23 半导体元件

Country Status (4)

Country Link
US (1) US11239388B2 (https=)
JP (3) JP7516040B2 (https=)
CN (2) CN120224869A (https=)
TW (3) TWI912224B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI912224B (zh) * 2018-12-24 2026-01-11 晶元光電股份有限公司 半導體元件
TWI830100B (zh) * 2021-12-13 2024-01-21 晶元光電股份有限公司 半導體光電元件
TWI911536B (zh) * 2023-06-13 2026-01-11 晶元光電股份有限公司 半導體元件
US20250048795A1 (en) * 2023-07-11 2025-02-06 Seoul Viosys Co., Ltd. Light emitting device and method of manufacturing the same
JP2025027704A (ja) * 2023-08-17 2025-02-28 ウシオ電機株式会社 赤外ｌｅｄ素子

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5048036A (en) 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
DE69312799T2 (de) * 1992-05-18 1998-02-12 Philips Electronics Nv Optoelektronische Halbleiteranordnung
JPH08102566A (ja) * 1994-09-30 1996-04-16 Nec Corp 量子井戸構造光半導体装置及びその製造方法
JPH08172241A (ja) * 1994-12-16 1996-07-02 Furukawa Electric Co Ltd:The ＡｌＧａＩｎＡｓ系多重量子井戸を有する半導体発光素子
JP2877107B2 (ja) * 1996-12-02 1999-03-31 日本電気株式会社 多重量子井戸型半導体レーザ
US6028875A (en) * 1996-10-11 2000-02-22 Nortel Networks Corporation Buried heterostructure laser with quaternary current blocking layer
JP2995187B1 (ja) * 1998-12-28 1999-12-27 日本学術振興会 半導体発光素子
JP4057802B2 (ja) 2001-09-05 2008-03-05 株式会社日立製作所 半導体光素子
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
JP3872398B2 (ja) 2002-08-07 2007-01-24 信越半導体株式会社 発光素子の製造方法及び発光素子
US6765238B2 (en) 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
JP4491610B2 (ja) 2005-06-17 2010-06-30 国立大学法人 千葉大学 半導体機能素子
US20070238281A1 (en) * 2006-03-28 2007-10-11 Hudait Mantu K Depositing polar materials on non-polar semiconductor substrates
US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
JP4985067B2 (ja) 2007-04-11 2012-07-25 日立電線株式会社 半導体発光素子
US8183557B2 (en) 2007-09-19 2012-05-22 The Regents Of The University Of California (Al,In,Ga,B)N device structures on a patterned substrate
US8642369B2 (en) * 2009-03-03 2014-02-04 Zn Technology, Inc. Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
JP2012175052A (ja) 2011-02-24 2012-09-10 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP5608589B2 (ja) 2011-03-10 2014-10-15 スタンレー電気株式会社 半導体発光素子および半導体発光素子の製造方法
DE102011050450A1 (de) * 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP2013030606A (ja) 2011-07-28 2013-02-07 Hitachi Cable Ltd 半導体発光素子
CN103474530B (zh) * 2012-06-07 2016-06-08 清华大学 发光二极管
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子
JP5957358B2 (ja) 2012-10-16 2016-07-27 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
CN104282813B (zh) * 2013-07-02 2018-04-06 晶元光电股份有限公司 发光元件
JP6257203B2 (ja) 2013-07-25 2018-01-10 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光素子
WO2016160319A1 (en) * 2015-04-02 2016-10-06 Applied Materials, Inc. Mocvd growth of highly mismatched iii-v cmos channel materials on silicon substrates
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
JP6452651B2 (ja) 2016-06-30 2019-01-16 Ｄｏｗａエレクトロニクス株式会社 半導体光デバイスの製造方法および半導体光デバイス
KR101725783B1 (ko) * 2016-07-19 2017-04-11 고려대학교 산학협력단 광추출효율 향상을 위한 전극을 구비한 발광 다이오드 소자
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
US11201261B2 (en) 2017-02-17 2021-12-14 Dowa Electronics Materials Co., Ltd. Deep ultraviolet light emitting element and method of manufacturing the same
WO2018160746A1 (en) * 2017-02-28 2018-09-07 University Of Iowa Research Foundation Cascaded broadband emission
TWI912224B (zh) * 2018-12-24 2026-01-11 晶元光電股份有限公司 半導體元件

Also Published As

Publication number Publication date
JP2024133566A (ja) 2024-10-02
US20200203570A1 (en) 2020-06-25
JP7708938B2 (ja) 2025-07-15
CN111354842B (zh) 2024-09-13
TWI912224B (zh) 2026-01-11
CN111354842A (zh) 2020-06-30
TW202543458A (zh) 2025-11-01
TW202519083A (zh) 2025-05-01
JP2025133859A (ja) 2025-09-11
TWI894090B (zh) 2025-08-11
JP7516040B2 (ja) 2024-07-16
TW202038482A (zh) 2020-10-16
US11239388B2 (en) 2022-02-01
JP2020102629A (ja) 2020-07-02
TWI873109B (zh) 2025-02-21

Similar Documents

Publication Publication Date Title
TWI912224B (zh) 半導體元件
TWI374551B (en) Iii-nitride light-emitting devices with improved high-current efficiency
KR101469979B1 (ko) 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
CN105122477A (zh) 半导体发光组件及其制造方法
CN104659163A (zh) 发光二极管及其形成方法
KR101722110B1 (ko) 그레이드 영역을 포함하는 반도체 발광 장치
US20160190388A1 (en) Semiconductor light emitting device
CN111952421B (zh) 半导体元件及半导体元件的封装结构
WO2026067855A1 (zh) 发光二极管和发光装置
TWI657595B (zh) 光電半導體元件
KR102426781B1 (ko) 반도체 소자 및 이를 구비한 발광 모듈
TWI785930B (zh) 光電半導體裝置
KR102035630B1 (ko) 발광 장치
US20150207025A1 (en) Method of manufacturing semiconductor light emitting device and method of manufacturing semiconductor light emitting device package
CN220569701U (zh) 半导体元件及半导体组件
CN103681724B (zh) 发光二极管阵列
KR20120067983A (ko) 발광 다이오드
TWI752295B (zh) 光電半導體裝置
US10396246B2 (en) Optoelectronic device and method for manufacturing the same
CN121013518A (zh) 半导体元件
KR101823682B1 (ko) 발광소자
CN119230684A (zh) 半导体元件
CN119486400A (zh) 一种发光二极管及发光装置
KR20150036386A (ko) 질소 및 인을 포함하는 발광 층을 갖는 발광 다이오드
KR20160084033A (ko) 발광 소자

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination