JP2022031313A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022031313A5 JP2022031313A5 JP2021196975A JP2021196975A JP2022031313A5 JP 2022031313 A5 JP2022031313 A5 JP 2022031313A5 JP 2021196975 A JP2021196975 A JP 2021196975A JP 2021196975 A JP2021196975 A JP 2021196975A JP 2022031313 A5 JP2022031313 A5 JP 2022031313A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- disilacyclobutane
- nitrogen
- carbon
- doped silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000002381 plasma Anatomy 0.000 claims 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 20
- 238000000034 method Methods 0.000 claims 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 16
- 229910052757 nitrogen Inorganic materials 0.000 claims 10
- 229910021529 ammonia Inorganic materials 0.000 claims 8
- 229910052786 argon Inorganic materials 0.000 claims 8
- 239000001307 helium Substances 0.000 claims 8
- 229910052734 helium Inorganic materials 0.000 claims 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 7
- 239000001257 hydrogen Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 150000001412 amines Chemical class 0.000 claims 3
- 125000004122 cyclic group Chemical group 0.000 claims 3
- 150000004985 diamines Chemical class 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- NLTXADBUSYWFIA-UHFFFAOYSA-N 1,1,3,3,5,5-hexachloro-1,3,5-trisilinane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C[Si](Cl)(Cl)C1 NLTXADBUSYWFIA-UHFFFAOYSA-N 0.000 claims 1
- DFQZXUVHEJJUTH-UHFFFAOYSA-N 1,1,3,3-tetrabromo-1,3-disiletane Chemical compound Br[Si]1(Br)C[Si](Br)(Br)C1 DFQZXUVHEJJUTH-UHFFFAOYSA-N 0.000 claims 1
- GHFCSGZETOKRDX-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3,5-trisilinane Chemical compound Cl[Si]1(C[Si](C[SiH2]C1)(Cl)Cl)Cl GHFCSGZETOKRDX-UHFFFAOYSA-N 0.000 claims 1
- SYSHGEHAYJKOLC-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3-disiletane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C1 SYSHGEHAYJKOLC-UHFFFAOYSA-N 0.000 claims 1
- YXEUXUWNULSFFD-UHFFFAOYSA-N 1,3-dibromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH](Br)C1 YXEUXUWNULSFFD-UHFFFAOYSA-N 0.000 claims 1
- JLQZGADRJJMDNW-UHFFFAOYSA-N 1,3-dichloro-1,3-dimethyl-1,3-disiletane Chemical compound C[Si]1(Cl)C[Si](C)(Cl)C1 JLQZGADRJJMDNW-UHFFFAOYSA-N 0.000 claims 1
- KLTYEMHFBXTIQP-UHFFFAOYSA-N 1,3-dichloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH](Cl)C1 KLTYEMHFBXTIQP-UHFFFAOYSA-N 0.000 claims 1
- GPWWAMQYZRLMDJ-UHFFFAOYSA-N 1-bromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH2]C1 GPWWAMQYZRLMDJ-UHFFFAOYSA-N 0.000 claims 1
- KFEPWALDYLJNIO-UHFFFAOYSA-N 1-chloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH2]C1 KFEPWALDYLJNIO-UHFFFAOYSA-N 0.000 claims 1
- ZSJFGVOPAMPCNL-UHFFFAOYSA-N Br[Si]1(C[SiH2]C1)Br Chemical compound Br[Si]1(C[SiH2]C1)Br ZSJFGVOPAMPCNL-UHFFFAOYSA-N 0.000 claims 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- YYAKHGXAIYORKU-UHFFFAOYSA-N Cl[Si]1(C[SiH2]C1)Cl Chemical compound Cl[Si]1(C[SiH2]C1)Cl YYAKHGXAIYORKU-UHFFFAOYSA-N 0.000 claims 1
- OSDVQTFYZSIHNB-UHFFFAOYSA-N I[SiH]1C[SiH2]C1 Chemical compound I[SiH]1C[SiH2]C1 OSDVQTFYZSIHNB-UHFFFAOYSA-N 0.000 claims 1
- VTCFWRLUGBYBBE-UHFFFAOYSA-N I[SiH]1C[SiH](C1)I Chemical compound I[SiH]1C[SiH](C1)I VTCFWRLUGBYBBE-UHFFFAOYSA-N 0.000 claims 1
- PUQYCPQNZPTQOZ-UHFFFAOYSA-N I[Si]1(C[SiH2]C1)I Chemical compound I[Si]1(C[SiH2]C1)I PUQYCPQNZPTQOZ-UHFFFAOYSA-N 0.000 claims 1
- UNVFLHYMVYCQNV-UHFFFAOYSA-N I[Si]1(C[Si](C1)(I)I)I Chemical compound I[Si]1(C[Si](C1)(I)I)I UNVFLHYMVYCQNV-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023164716A JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562113024P | 2015-02-06 | 2015-02-06 | |
| US62/113,024 | 2015-02-06 | ||
| US201562142546P | 2015-04-03 | 2015-04-03 | |
| US62/142,546 | 2015-04-03 | ||
| JP2019161923A JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161923A Division JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023164716A Division JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022031313A JP2022031313A (ja) | 2022-02-18 |
| JP2022031313A5 true JP2022031313A5 (OSRAM) | 2022-05-31 |
Family
ID=55436159
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10145008B2 (OSRAM) |
| EP (2) | EP3254303B1 (OSRAM) |
| JP (4) | JP6585724B2 (OSRAM) |
| KR (4) | KR102650626B1 (OSRAM) |
| CN (1) | CN107406978B (OSRAM) |
| IL (1) | IL253746B (OSRAM) |
| SG (2) | SG11201706257YA (OSRAM) |
| TW (1) | TWI585230B (OSRAM) |
| WO (1) | WO2016126911A2 (OSRAM) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11549181B2 (en) * | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
| EP3254303B1 (en) * | 2015-02-06 | 2018-12-05 | Versum Materials US, LLC | Method for formation of carbon doped silicon containing films |
| TWI706957B (zh) * | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| WO2019055415A1 (en) | 2017-09-12 | 2019-03-21 | Applied Materials, Inc. | APPARATUS AND METHODS FOR MANUFACTURING SEMICONDUCTOR STRUCTURES USING A PROTECTIVE BARRIER LAYER |
| WO2019058477A1 (ja) * | 2017-09-21 | 2019-03-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US10483372B2 (en) * | 2017-09-29 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer structure with high plasma resistance for semiconductor devices |
| EP3707746B1 (en) | 2017-11-11 | 2023-12-27 | Micromaterials LLC | Gas delivery system for high pressure processing chamber |
| WO2019099125A1 (en) | 2017-11-16 | 2019-05-23 | Applied Materials, Inc. | High pressure steam anneal processing apparatus |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| US10510852B2 (en) | 2017-11-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k feature formation processes and structures formed thereby |
| JP6806719B2 (ja) | 2018-01-17 | 2021-01-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP7299898B2 (ja) | 2018-01-24 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 高圧アニールを用いたシーム修復 |
| KR102702244B1 (ko) | 2018-03-09 | 2024-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
| US10714331B2 (en) * | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| US20200071819A1 (en) * | 2018-08-29 | 2020-03-05 | Versum Materials Us, Llc | Methods For Making Silicon Containing Films That Have High Carbon Content |
| US10985010B2 (en) | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| JP6980624B2 (ja) * | 2018-09-13 | 2021-12-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| KR102824780B1 (ko) * | 2018-09-21 | 2025-06-24 | 램 리써치 코포레이션 | 로우-K (low-k) ALD 갭-충진 방법들 및 재료 |
| US20220037144A1 (en) * | 2018-09-24 | 2022-02-03 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| US20210398796A1 (en) * | 2018-10-03 | 2021-12-23 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| CN112969817B (zh) * | 2018-10-05 | 2024-04-19 | 弗萨姆材料美国有限责任公司 | 含硅膜的高温原子层沉积 |
| JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
| CN112996950B (zh) | 2018-11-16 | 2024-04-05 | 应用材料公司 | 使用增强扩散工艺的膜沉积 |
| KR102670993B1 (ko) * | 2018-11-27 | 2024-05-29 | 버슘머트리얼즈 유에스, 엘엘씨 | 1-메틸-1-이소-프로폭시-실라사이클로알칸 및 이로부터 제조된 고밀도 오가노실리카 필름 |
| JP6957442B2 (ja) | 2018-11-30 | 2021-11-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| TWI764068B (zh) | 2019-01-11 | 2022-05-11 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 |
| US11756786B2 (en) | 2019-01-18 | 2023-09-12 | International Business Machines Corporation | Forming high carbon content flowable dielectric film with low processing damage |
| US11649547B2 (en) * | 2019-02-05 | 2023-05-16 | Versum Materials Us, Llc | Deposition of carbon doped silicon oxide |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| US12264258B2 (en) | 2019-07-25 | 2025-04-01 | Versum Materials Us, Llc | Compositions comprising silacycloalkanes and methods using same for deposition of silicon-containing film |
| US11186909B2 (en) * | 2019-08-26 | 2021-11-30 | Applied Materials, Inc. | Methods of depositing low-K films |
| KR102844501B1 (ko) * | 2020-01-31 | 2025-08-11 | 주식회사 유피케미칼 | 실리콘 전구체 화합물, 이를 포함하는 실리콘-함유 막 형성용 조성물 및 실리콘-함유 막 형성 방법 |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| CN111681943B (zh) * | 2020-04-27 | 2025-10-31 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| CN115867689A (zh) * | 2020-06-23 | 2023-03-28 | 恩特格里斯公司 | 硅前体化合物及形成含硅膜的方法 |
| WO2022020528A1 (en) | 2020-07-23 | 2022-01-27 | Lam Research Corporation | Conformal thermal cvd with controlled film properties and high deposition rate |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP2023550351A (ja) * | 2020-11-16 | 2023-12-01 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素及び酸素を含有する誘電体膜の誘電体への選択的堆積 |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| US20220308453A1 (en) * | 2021-03-24 | 2022-09-29 | Applied Materials, Inc. | Oxidation treatment for positive tone photoresist films |
| US20220342302A1 (en) * | 2021-03-24 | 2022-10-27 | Applied Materials, Inc. | Dual tone photoresists |
| US12550643B2 (en) * | 2021-06-22 | 2026-02-10 | Applied Materials, Inc. | Oxidants and strained-ring precursors |
| KR20240121876A (ko) * | 2021-12-20 | 2024-08-09 | 램 리써치 코포레이션 | 아미노실란 전구체 및 클로로실란 전구체를 사용한 컨포멀한 (conformal) 실리콘 옥사이드 증착 |
| KR20240160248A (ko) | 2022-07-01 | 2024-11-08 | 램 리써치 코포레이션 | 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| WO2024015168A1 (en) * | 2022-07-11 | 2024-01-18 | Applied Materials, Inc. | Dual tone photoresists |
| JP2024077324A (ja) * | 2022-11-28 | 2024-06-07 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| TW202513849A (zh) * | 2023-06-13 | 2025-04-01 | 美商蘭姆研究公司 | 低介電膜沉積用前驅物 |
| KR20250069677A (ko) | 2023-07-27 | 2025-05-19 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
| JP2025167351A (ja) * | 2024-04-25 | 2025-11-07 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100267605B1 (ko) * | 1992-09-24 | 2000-10-16 | 안자이 이치로 | 파이프 조인트 |
| US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
| US20080268177A1 (en) * | 2002-05-17 | 2008-10-30 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
| JP5218765B2 (ja) * | 2006-03-29 | 2013-06-26 | Ｊｓｒ株式会社 | ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜 |
| US7998536B2 (en) * | 2007-07-12 | 2011-08-16 | Applied Materials, Inc. | Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition |
| KR100923775B1 (ko) * | 2007-11-30 | 2009-10-27 | 한국과학기술연구원 | 폴리염화카보실란의 제조방법 |
| JPWO2009123032A1 (ja) * | 2008-04-02 | 2011-07-28 | Jsr株式会社 | 含ケイ素重合体を含む組成物およびその硬化物 |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| US8298628B2 (en) * | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
| EP2373830B1 (en) * | 2008-10-20 | 2014-04-30 | Dow Corning Corporation | Cvd precursors |
| US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US8703625B2 (en) * | 2010-02-04 | 2014-04-22 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
| JP5374638B2 (ja) * | 2010-04-09 | 2013-12-25 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| KR20130135261A (ko) * | 2010-11-03 | 2013-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들 |
| WO2013039881A2 (en) | 2011-09-13 | 2013-03-21 | Applied Materials, Inc. | Carbosilane precursors for low temperature film deposition |
| US8993072B2 (en) * | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
| JP6043546B2 (ja) * | 2011-10-21 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
| US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| US20130288485A1 (en) * | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US9337018B2 (en) * | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US9243324B2 (en) * | 2012-07-30 | 2016-01-26 | Air Products And Chemicals, Inc. | Methods of forming non-oxygen containing silicon-based films |
| KR20150121217A (ko) | 2013-03-01 | 2015-10-28 | 어플라이드 머티어리얼스, 인코포레이티드 | ＳｉＣＮ 또는 ＳｉＣＯＮ을 포함하는 필름의 저온 원자층 증착 |
| US20140302690A1 (en) | 2013-04-04 | 2014-10-09 | Applied Materials, Inc. | Chemical linkers to impart improved mechanical strength to flowable films |
| US9343293B2 (en) | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
| EP3254303B1 (en) * | 2015-02-06 | 2018-12-05 | Versum Materials US, LLC | Method for formation of carbon doped silicon containing films |
-
2016
- 2016-02-04 EP EP16706464.1A patent/EP3254303B1/en active Active
- 2016-02-04 KR KR1020227005956A patent/KR102650626B1/ko active Active
- 2016-02-04 SG SG11201706257YA patent/SG11201706257YA/en unknown
- 2016-02-04 US US15/548,884 patent/US10145008B2/en active Active
- 2016-02-04 CN CN201680019197.0A patent/CN107406978B/zh active Active
- 2016-02-04 TW TW105103876A patent/TWI585230B/zh active
- 2016-02-04 EP EP18201141.1A patent/EP3460827B1/en active Active
- 2016-02-04 JP JP2017541257A patent/JP6585724B2/ja active Active
- 2016-02-04 KR KR1020197037069A patent/KR20190141034A/ko not_active Ceased
- 2016-02-04 KR KR1020247009235A patent/KR20240042186A/ko not_active Ceased
- 2016-02-04 KR KR1020177025009A patent/KR102058595B1/ko active Active
- 2016-02-04 SG SG10202012631SA patent/SG10202012631SA/en unknown
- 2016-02-04 WO PCT/US2016/016514 patent/WO2016126911A2/en not_active Ceased
-
2017
- 2017-07-31 IL IL253746A patent/IL253746B/en unknown
-
2019
- 2019-09-05 JP JP2019161923A patent/JP7048548B2/ja active Active
-
2021
- 2021-12-03 JP JP2021196975A patent/JP2022031313A/ja active Pending
-
2023
- 2023-09-27 JP JP2023164716A patent/JP2023182658A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2023182658A5 (OSRAM) | ||
| JP2018506185A5 (OSRAM) | ||
| KR20210130646A (ko) | 기판을 처리하기 위한 방법 | |
| JP4832643B2 (ja) | 現場での化学発生装置及び方法 | |
| JP2022008973A5 (OSRAM) | ||
| JP6917991B2 (ja) | トリス（ジシラニル）アミン | |
| JP2009111382A5 (OSRAM) | ||
| JP2009152551A5 (OSRAM) | ||
| JP2015111668A5 (OSRAM) | ||
| KR20140074942A (ko) | 저온 증착용 활성화된 규소 전구체 | |
| JP2014179607A5 (OSRAM) | ||
| JP2022532755A5 (OSRAM) | ||
| JP2009545884A5 (OSRAM) | ||
| JP2022516312A5 (OSRAM) | ||
| JPWO2022054216A5 (ja) | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム | |
| JP2022051034A5 (OSRAM) | ||
| TW200424346A (en) | Method for forming silicon dioxide film using siloxane | |
| JPH07249618A (ja) | 半導体装置の製造方法 | |
| CN110817852B (zh) | 基于水处理辅助机制的石墨烯制备方法 | |
| JP2000058878A5 (OSRAM) | ||
| CN102674333A (zh) | 基于Ni膜退火和Cl2反应的结构化石墨烯制备方法 | |
| JPWO2024116827A5 (OSRAM) | ||
| JP2022077710A5 (ja) | エッチング方法及びプラズマ処理装置 | |
| EP0469824A1 (en) | Method of depositing fluorinated silicon nitride | |
| JPWO2018150452A1 (ja) | 窒化膜成膜方法 |