JP2022008046A5 - - Google Patents
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- JP2022008046A5 JP2022008046A5 JP2021067587A JP2021067587A JP2022008046A5 JP 2022008046 A5 JP2022008046 A5 JP 2022008046A5 JP 2021067587 A JP2021067587 A JP 2021067587A JP 2021067587 A JP2021067587 A JP 2021067587A JP 2022008046 A5 JP2022008046 A5 JP 2022008046A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- atom
- ion
- alkyl group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000004432 carbon atom Chemical group C* 0.000 claims 28
- 125000000217 alkyl group Chemical group 0.000 claims 19
- 125000003118 aryl group Chemical group 0.000 claims 13
- -1 phosphonium ion Chemical class 0.000 claims 9
- 229910052801 chlorine Inorganic materials 0.000 claims 8
- 125000001309 chloro group Chemical group Cl* 0.000 claims 8
- 229910052731 fluorine Inorganic materials 0.000 claims 8
- 125000001153 fluoro group Chemical group F* 0.000 claims 8
- 150000003839 salts Chemical class 0.000 claims 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 6
- 125000003710 aryl alkyl group Chemical group 0.000 claims 6
- 229910052707 ruthenium Inorganic materials 0.000 claims 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 4
- 125000002723 alicyclic group Chemical group 0.000 claims 4
- 125000003302 alkenyloxy group Chemical group 0.000 claims 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 4
- 229910052794 bromium Inorganic materials 0.000 claims 4
- 239000003112 inhibitor Substances 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 125000003342 alkenyl group Chemical group 0.000 claims 3
- 125000003545 alkoxy group Chemical group 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 claims 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims 1
- DKSMCEUSSQTGBK-UHFFFAOYSA-M bromite Inorganic materials [O-]Br=O DKSMCEUSSQTGBK-UHFFFAOYSA-M 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- JGJLWPGRMCADHB-UHFFFAOYSA-N hypobromite Inorganic materials Br[O-] JGJLWPGRMCADHB-UHFFFAOYSA-N 0.000 claims 1
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Inorganic materials Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 1
- 150000004010 onium ions Chemical class 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Inorganic materials [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims 1
- GJSGYPDDPQRWPK-UHFFFAOYSA-N tetrapentylammonium Chemical compound CCCCC[N+](CCCCC)(CCCCC)CCCCC GJSGYPDDPQRWPK-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019176727 | 2019-09-27 | ||
| JP2019176727 | 2019-09-27 | ||
| JP2019193081 | 2019-10-23 | ||
| JP2019193081 | 2019-10-23 | ||
| JP2019211875 | 2019-11-22 | ||
| JP2019211875 | 2019-11-22 | ||
| JP2020045869 | 2020-03-16 | ||
| JP2020045869 | 2020-03-16 | ||
| JP2020117652 | 2020-07-08 | ||
| JP2020117652 | 2020-07-08 | ||
| JP2020569922A JP6874231B1 (ja) | 2019-09-27 | 2020-09-23 | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| PCT/JP2020/035677 WO2021060234A1 (ja) | 2019-09-27 | 2020-09-23 | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020569922A Division JP6874231B1 (ja) | 2019-09-27 | 2020-09-23 | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022008046A JP2022008046A (ja) | 2022-01-13 |
| JP2022008046A5 true JP2022008046A5 (https=) | 2024-07-25 |
| JP7628051B2 JP7628051B2 (ja) | 2025-02-07 |
Family
ID=75165826
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020569922A Active JP6874231B1 (ja) | 2019-09-27 | 2020-09-23 | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| JP2021067587A Active JP7628051B2 (ja) | 2019-09-27 | 2021-04-13 | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020569922A Active JP6874231B1 (ja) | 2019-09-27 | 2020-09-23 | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11932590B2 (https=) |
| JP (2) | JP6874231B1 (https=) |
| KR (1) | KR102799383B1 (https=) |
| CN (1) | CN114514598A (https=) |
| TW (2) | TWI839661B (https=) |
| WO (1) | WO2021060234A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI901664B (zh) * | 2020-03-31 | 2025-10-21 | 日商德山股份有限公司 | 半導體用處理液及其製造方法 |
| KR102616131B1 (ko) * | 2020-08-24 | 2023-12-21 | 세메스 주식회사 | 기판 처리 장치, 이온 주입 처리 장치 및 이온 주입 처리 방법 |
| KR20230128967A (ko) | 2022-02-28 | 2023-09-05 | 동우 화인켐 주식회사 | 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판 |
| TW202424172A (zh) * | 2022-09-29 | 2024-06-16 | 日商德山股份有限公司 | 乾式蝕刻殘渣去除液 |
| US20250084309A1 (en) * | 2022-10-03 | 2025-03-13 | Tokuyama Corporation | Semiconductor processing solution |
| WO2024143473A1 (ja) * | 2022-12-28 | 2024-07-04 | 株式会社トクヤマ | 遷移金属用酸化剤の分解抑制剤 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2256958A (en) * | 1939-05-13 | 1941-09-23 | Pittsburgh Plate Glass Co | Quaternary ammonium hypohalites and method of making same |
| US4066656A (en) * | 1976-07-13 | 1978-01-03 | E. I. Du Pont De Nemours And Company | [1,2,5,6]Tetrathiocino-[3,4-c; 7,8-c']diisothiazole-3,8-dicarbonitrile |
| KR0121800B1 (ko) | 1992-05-08 | 1997-11-22 | 사또오 후미오 | 메모리 카드장치 |
| JP3122222B2 (ja) | 1992-05-08 | 2001-01-09 | 株式会社東芝 | メモリカード装置 |
| TW490756B (en) | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
| JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| JP4947021B2 (ja) * | 2002-12-25 | 2012-06-06 | Ｊｓｒ株式会社 | オニウム塩化合物、感放射線性酸発生剤およびポジ型感放射線性樹脂組成物 |
| US7476290B2 (en) | 2003-10-30 | 2009-01-13 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
| JP2005314019A (ja) | 2004-04-27 | 2005-11-10 | Fuiisa Kk | 枚葉物搬送ローラ及びこれを用いた機器類 |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| JP2006193340A (ja) | 2005-01-11 | 2006-07-27 | Sumitomo Metal Mining Co Ltd | ルテニウム複合酸化物粉とその製造方法 |
| JP4867520B2 (ja) | 2006-08-08 | 2012-02-01 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
| KR20090129396A (ko) * | 2007-04-13 | 2009-12-16 | 도소 가부시키가이샤 | 에칭용 조성물 및 에칭 방법 |
| KR100980607B1 (ko) * | 2007-11-08 | 2010-09-07 | 주식회사 하이닉스반도체 | 루테늄 연마용 슬러리 및 그를 이용한 연마 방법 |
| KR101569338B1 (ko) | 2007-11-13 | 2015-11-17 | 사켐,인코포레이티드 | 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법 |
| WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| US8906123B2 (en) | 2010-12-29 | 2014-12-09 | Air Products And Chemicals Inc. | CMP slurry/method for polishing ruthenium and other films |
| JP2014062297A (ja) | 2012-09-20 | 2014-04-10 | Toshiba Corp | 処理装置、処理液の製造方法、および電子デバイスの製造方法 |
| JP2015159264A (ja) * | 2013-05-02 | 2015-09-03 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
| KR102338550B1 (ko) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법 |
| WO2016006631A1 (ja) * | 2014-07-09 | 2016-01-14 | 日立化成株式会社 | Ｃｍｐ用研磨液及び研磨方法 |
| WO2016068183A1 (ja) | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| CN111684570B (zh) | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| WO2019151144A1 (ja) * | 2018-02-05 | 2019-08-08 | Jsr株式会社 | 化学機械研磨用組成物及び研磨方法 |
| CN111684575B (zh) | 2018-02-05 | 2023-09-29 | 富士胶片株式会社 | 药液、药液的制造方法、基板的处理方法 |
| WO2019151145A1 (ja) * | 2018-02-05 | 2019-08-08 | Jsr株式会社 | 化学機械研磨用組成物及び研磨方法 |
| US10361092B1 (en) | 2018-02-23 | 2019-07-23 | Lam Research Corporation | Etching features using metal passivation |
| JP7375032B2 (ja) * | 2020-08-07 | 2023-11-07 | 株式会社トクヤマ | 半導体ウエハ用処理液 |
-
2020
- 2020-09-23 JP JP2020569922A patent/JP6874231B1/ja active Active
- 2020-09-23 KR KR1020227009493A patent/KR102799383B1/ko active Active
- 2020-09-23 WO PCT/JP2020/035677 patent/WO2021060234A1/ja not_active Ceased
- 2020-09-23 CN CN202080068040.3A patent/CN114514598A/zh active Pending
- 2020-09-23 US US17/266,283 patent/US11932590B2/en active Active
- 2020-09-25 TW TW110144335A patent/TWI839661B/zh active
- 2020-09-25 TW TW109133196A patent/TWI752651B/zh active
-
2021
- 2021-04-13 JP JP2021067587A patent/JP7628051B2/ja active Active
-
2024
- 2024-02-13 US US18/440,134 patent/US20240182404A1/en active Pending
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