JP6874231B1 - ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 - Google Patents

ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 Download PDF

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JP6874231B1
JP6874231B1 JP2020569922A JP2020569922A JP6874231B1 JP 6874231 B1 JP6874231 B1 JP 6874231B1 JP 2020569922 A JP2020569922 A JP 2020569922A JP 2020569922 A JP2020569922 A JP 2020569922A JP 6874231 B1 JP6874231 B1 JP 6874231B1
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ruo
group
carbon atoms
ion
gas
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JPWO2021060234A1 (ja
Inventor
伴光 佐藤
伴光 佐藤
由樹 吉川
由樹 吉川
享史 下田
享史 下田
貴幸 根岸
貴幸 根岸
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Tokuyama Corp
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Tokuyama Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/04—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/10—Spiro-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Catalysts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2020569922A 2019-09-27 2020-09-23 ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 Active JP6874231B1 (ja)

Priority Applications (1)

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JP2021067587A JP7628051B2 (ja) 2019-09-27 2021-04-13 ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法

Applications Claiming Priority (11)

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JP2019176727 2019-09-27
JP2019176727 2019-09-27
JP2019193081 2019-10-23
JP2019193081 2019-10-23
JP2019211875 2019-11-22
JP2019211875 2019-11-22
JP2020045869 2020-03-16
JP2020045869 2020-03-16
JP2020117652 2020-07-08
JP2020117652 2020-07-08
PCT/JP2020/035677 WO2021060234A1 (ja) 2019-09-27 2020-09-23 ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法

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JP6874231B1 true JP6874231B1 (ja) 2021-05-19
JPWO2021060234A1 JPWO2021060234A1 (ja) 2021-10-07

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JP2021067587A Active JP7628051B2 (ja) 2019-09-27 2021-04-13 ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法

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US (2) US11932590B2 (https=)
JP (2) JP6874231B1 (https=)
KR (1) KR102799383B1 (https=)
CN (1) CN114514598A (https=)
TW (2) TWI839661B (https=)
WO (1) WO2021060234A1 (https=)

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TWI901664B (zh) * 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
KR102616131B1 (ko) * 2020-08-24 2023-12-21 세메스 주식회사 기판 처리 장치, 이온 주입 처리 장치 및 이온 주입 처리 방법
KR20230128967A (ko) 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
TW202424172A (zh) * 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
US20250084309A1 (en) * 2022-10-03 2025-03-13 Tokuyama Corporation Semiconductor processing solution
WO2024143473A1 (ja) * 2022-12-28 2024-07-04 株式会社トクヤマ 遷移金属用酸化剤の分解抑制剤

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US20090124082A1 (en) * 2007-11-08 2009-05-14 Hynix Semiconductor Inc. Slurry for polishing ruthenium and method for polishing using the same
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US20090124082A1 (en) * 2007-11-08 2009-05-14 Hynix Semiconductor Inc. Slurry for polishing ruthenium and method for polishing using the same
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
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Also Published As

Publication number Publication date
CN114514598A (zh) 2022-05-17
WO2021060234A1 (ja) 2021-04-01
US20210340095A1 (en) 2021-11-04
KR20220051230A (ko) 2022-04-26
JP7628051B2 (ja) 2025-02-07
US11932590B2 (en) 2024-03-19
TW202212635A (zh) 2022-04-01
JPWO2021060234A1 (ja) 2021-10-07
TWI839661B (zh) 2024-04-21
KR102799383B1 (ko) 2025-04-22
TWI752651B (zh) 2022-01-11
TW202117080A (zh) 2021-05-01
US20240182404A1 (en) 2024-06-06
JP2022008046A (ja) 2022-01-13

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