CN114514598A - RuO4气体的产生抑制剂以及RuO4气体的产生抑制方法 - Google Patents

RuO4气体的产生抑制剂以及RuO4气体的产生抑制方法 Download PDF

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Publication number
CN114514598A
CN114514598A CN202080068040.3A CN202080068040A CN114514598A CN 114514598 A CN114514598 A CN 114514598A CN 202080068040 A CN202080068040 A CN 202080068040A CN 114514598 A CN114514598 A CN 114514598A
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China
Prior art keywords
ruo
group
ion
carbon atoms
gas
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CN202080068040.3A
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English (en)
Chinese (zh)
Inventor
佐藤伴光
吉川由树
下田享史
根岸贵幸
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Tokuyama Corp
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Tokuyama Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/04—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/10—Spiro-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Catalysts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202080068040.3A 2019-09-27 2020-09-23 RuO4气体的产生抑制剂以及RuO4气体的产生抑制方法 Pending CN114514598A (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2019-176727 2019-09-27
JP2019176727 2019-09-27
JP2019193081 2019-10-23
JP2019-193081 2019-10-23
JP2019-211875 2019-11-22
JP2019211875 2019-11-22
JP2020045869 2020-03-16
JP2020-045869 2020-03-16
JP2020-117652 2020-07-08
JP2020117652 2020-07-08
PCT/JP2020/035677 WO2021060234A1 (ja) 2019-09-27 2020-09-23 ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法

Publications (1)

Publication Number Publication Date
CN114514598A true CN114514598A (zh) 2022-05-17

Family

ID=75165826

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080068040.3A Pending CN114514598A (zh) 2019-09-27 2020-09-23 RuO4气体的产生抑制剂以及RuO4气体的产生抑制方法

Country Status (6)

Country Link
US (2) US11932590B2 (https=)
JP (2) JP6874231B1 (https=)
KR (1) KR102799383B1 (https=)
CN (1) CN114514598A (https=)
TW (2) TWI839661B (https=)
WO (1) WO2021060234A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI901664B (zh) * 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
KR102616131B1 (ko) * 2020-08-24 2023-12-21 세메스 주식회사 기판 처리 장치, 이온 주입 처리 장치 및 이온 주입 처리 방법
KR20230128967A (ko) 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
TW202424172A (zh) * 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
US20250084309A1 (en) * 2022-10-03 2025-03-13 Tokuyama Corporation Semiconductor processing solution
WO2024143473A1 (ja) * 2022-12-28 2024-07-04 株式会社トクヤマ 遷移金属用酸化剤の分解抑制剤

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020060202A1 (en) * 2000-11-22 2002-05-23 Akira Fukunaga Method and apparatus for etching ruthenium films
JP2009079049A (ja) * 2002-12-25 2009-04-16 Jsr Corp オニウム塩化合物、感放射線性酸発生剤およびポジ型感放射線性樹脂組成物
CN102652188A (zh) * 2009-12-17 2012-08-29 昭和电工株式会社 钌类金属的蚀刻用组合物及其配制方法
JP2015159264A (ja) * 2013-05-02 2015-09-03 富士フイルム株式会社 エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
US20220298416A1 (en) * 2020-08-07 2022-09-22 Tokuyama Corporation Treatment liquid for semiconductor wafers

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
US4066656A (en) * 1976-07-13 1978-01-03 E. I. Du Pont De Nemours And Company [1,2,5,6]Tetrathiocino-[3,4-c; 7,8-c']diisothiazole-3,8-dicarbonitrile
KR0121800B1 (ko) 1992-05-08 1997-11-22 사또오 후미오 메모리 카드장치
JP3122222B2 (ja) 1992-05-08 2001-01-09 株式会社東芝 メモリカード装置
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US7476290B2 (en) 2003-10-30 2009-01-13 Ebara Corporation Substrate processing apparatus and substrate processing method
JP2005314019A (ja) 2004-04-27 2005-11-10 Fuiisa Kk 枚葉物搬送ローラ及びこれを用いた機器類
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
JP2006193340A (ja) 2005-01-11 2006-07-27 Sumitomo Metal Mining Co Ltd ルテニウム複合酸化物粉とその製造方法
JP4867520B2 (ja) 2006-08-08 2012-02-01 東ソー株式会社 エッチング用組成物及びエッチング方法
KR20090129396A (ko) * 2007-04-13 2009-12-16 도소 가부시키가이샤 에칭용 조성물 및 에칭 방법
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
KR101569338B1 (ko) 2007-11-13 2015-11-17 사켐,인코포레이티드 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법
US8906123B2 (en) 2010-12-29 2014-12-09 Air Products And Chemicals Inc. CMP slurry/method for polishing ruthenium and other films
JP2014062297A (ja) 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
WO2016006631A1 (ja) * 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
WO2019151144A1 (ja) * 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
CN111684575B (zh) 2018-02-05 2023-09-29 富士胶片株式会社 药液、药液的制造方法、基板的处理方法
WO2019151145A1 (ja) * 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020060202A1 (en) * 2000-11-22 2002-05-23 Akira Fukunaga Method and apparatus for etching ruthenium films
EP1213369A2 (en) * 2000-11-22 2002-06-12 Ebara Corporation Method and apparatus for etching ruthenium films
JP2009079049A (ja) * 2002-12-25 2009-04-16 Jsr Corp オニウム塩化合物、感放射線性酸発生剤およびポジ型感放射線性樹脂組成物
CN102652188A (zh) * 2009-12-17 2012-08-29 昭和电工株式会社 钌类金属的蚀刻用组合物及其配制方法
JP2015159264A (ja) * 2013-05-02 2015-09-03 富士フイルム株式会社 エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
US20220298416A1 (en) * 2020-08-07 2022-09-22 Tokuyama Corporation Treatment liquid for semiconductor wafers

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Publication number Publication date
JP6874231B1 (ja) 2021-05-19
WO2021060234A1 (ja) 2021-04-01
US20210340095A1 (en) 2021-11-04
KR20220051230A (ko) 2022-04-26
JP7628051B2 (ja) 2025-02-07
US11932590B2 (en) 2024-03-19
TW202212635A (zh) 2022-04-01
JPWO2021060234A1 (ja) 2021-10-07
TWI839661B (zh) 2024-04-21
KR102799383B1 (ko) 2025-04-22
TWI752651B (zh) 2022-01-11
TW202117080A (zh) 2021-05-01
US20240182404A1 (en) 2024-06-06
JP2022008046A (ja) 2022-01-13

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