JP2021527947A - 素子の製造方法 - Google Patents
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Abstract
Description
炭素電極上に備えられた第3バッファ層を含む第2積層体を用意するステップと、
前記第2バッファ層と前記第3バッファ層とが互いに接するように第1積層体および第2積層体を接合するステップとを含む素子の製造方法を提供する。
20:第1バッファ層
30:エキシトン発生層
40:第2バッファ層
50:第3バッファ層
60:第2電極
炭素電極上に備えられた第3バッファ層を含む第2積層体を用意するステップと、
前記第2バッファ層と前記第3バッファ層とが互いに接するように第1積層体および第2積層体を接合するステップとを含む素子の製造方法を提供する。
第1電極と、
前記第1電極上に備えられた第1バッファ層と、
前記第1バッファ層上に備えられたエキシトン発生層と、
前記エキシトン発生層上に備えられた第2バッファ層とを含む。
炭素電極と、
前記炭素電極上に備えられた第3バッファ層とを含む。
第1電極を用意するステップと、
前記第1電極上に第1バッファ層を形成するステップと、
第1バッファ層上にエキシトン発生層を形成するステップと、
前記エキシトン発生層上に第2バッファ層形成用組成物を塗布するステップと、
前記第2バッファ層形成用組成物を半硬化するステップとを含む。
炭素電極を用意するステップと、
前記炭素電極上に第3バッファ層形成用組成物を塗布するステップと、
前記組成物を半硬化するステップとを含む。
第1電極と、
前記第1電極上に備えられた第1バッファ層と、
前記第1バッファ層上に備えられたエキシトン発生層と、
前記エキシトン発生層上に備えられた第2バッファ層と、
前記第2バッファ層上に備えられた第3バッファ層と、
前記第3バッファ層上に備えられた炭素電極とを含む。
第1電極と、
前記第1電極上に備えられた第1バッファ層と、
前記第1バッファ層上に備えられたエキシトン発生層と、
前記エキシトン発生層上に備えられた第4バッファ層と、
前記第4バッファ層上に備えられた炭素電極とを含む。
R1M1X13
R2aR3(1−a)M2X2zX3(3−z)
R4bR5cR6dM3X4z'X5(3−z')
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1〜R6は、それぞれ独立して、CnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、Rb+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1〜M3は、互いに同一または異なり、それぞれ独立して、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1〜X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1〜9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。
Claims (17)
- 第1バッファ層および第2バッファ層を含む第1積層体を用意するステップと、
炭素電極上に備えられた第3バッファ層を含む第2積層体を用意するステップと、
前記第2バッファ層と前記第3バッファ層とが互いに接するように第1積層体および第2積層体を接合するステップと
を含む
素子の製造方法。 - 前記第1積層体は、
第1電極と、
前記第1電極上に備えられた第1バッファ層と、
前記第1バッファ層上に備えられたエキシトン発生層と、
前記エキシトン発生層上に備えられた第2バッファ層と
を含む、
請求項1に記載の素子の製造方法。 - 前記エキシトン発生層は、光吸収層である、
請求項2に記載の素子の製造方法。 - 前記光吸収層は、ペロブスカイト構造の化合物を含む、
請求項3に記載の素子の製造方法。 - 前記第2バッファ層および第3バッファ層は、半硬化状態である、
請求項1から4のいずれか1項に記載の素子の製造方法。 - 前記第2積層体を用意するステップは、
炭素電極を用意するステップと、
前記炭素電極上に第3バッファ層形成用組成物を塗布するステップと、
前記第3バッファ層形成用組成物を半硬化するステップと
を含む、
請求項1から5のいずれか1項に記載の素子の製造方法。 - 前記第3バッファ層形成用組成物を半硬化するステップは、光硬化または熱硬化するステップを含む、
請求項6に記載の素子の製造方法。 - 前記第2バッファ層と前記第3バッファ層とが互いに接するように第1積層体および第2積層体を接合するステップは、接合中または接合後に硬化を行うことを含む、
請求項1から7のいずれか1項に記載の素子の製造方法。 - 前記炭素電極は、炭素ナノチューブ(CNT)、グラファイト(graphite)、グラフェン(graphene)、酸化グラフェン(graphene oxide)、活性炭、多孔性炭素(mesoporous carbon)、炭素繊維(carbon fiber)、導電性カーボンブラック(carbon black)、および炭素ナノワイヤ(carbon nano wire)の1種以上を含む、
請求項1から8のいずれか1項に記載の素子の製造方法。 - 前記炭素電極は、バインダーをさらに含む、
請求項9に記載の素子の製造方法。 - 前記第1バッファ層は、単層または多層からなる、
請求項1から10のいずれか1項に記載の素子の製造方法。 - 前記素子は、有機−無機複合太陽電池、有機太陽電池、有機発光ダイオード(OLED)、および有機フォトダイオードからなる群より選択される、
請求項1から11のいずれか1項に記載の素子の製造方法。 - 前記第1バッファ層は、Cu系無機物、金属酸化物、およびフラーレン誘導体からなる群より選択される1種以上を含む、
請求項1から12のいずれか1項に記載の素子の製造方法。 - 前記第2バッファ層および第3バッファ層は、それぞれ無機物、有機化合物、および重合体からなる群より選択される1種以上を含む、
請求項1から13のいずれか1項に記載の素子の製造方法。 - 請求項1〜14のいずれか1項に記載の素子の製造方法で製造された
素子。 - 前記素子は、
第1電極と、
前記第1電極上に備えられた第1バッファ層と、
前記第1バッファ層上に備えられたエキシトン発生層と、
前記エキシトン発生層上に備えられた第2バッファ層と、
前記第2バッファ層上に備えられた第3バッファ層と、
前記第3バッファ層上に備えられた炭素電極と
を含む、
請求項15に記載の素子。 - 前記素子は、
第1電極と、
前記第1電極上に備えられた第1バッファ層と、
前記第1バッファ層上に備えられたエキシトン発生層と、
前記エキシトン発生層上に備えられた第4バッファ層と、
前記第4バッファ層上に備えられた炭素電極と
を含む、
請求項15に記載の素子。
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