JP7110537B2 - 光吸収層用前駆体、これを用いた有機-無機複合太陽電池の製造方法および有機-無機複合太陽電池 - Google Patents
光吸収層用前駆体、これを用いた有機-無機複合太陽電池の製造方法および有機-無機複合太陽電池 Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
前記ペロブスカイト前駆体対比0.005wt%~0.5wt%のフッ素系有機化合物を含むものである光吸収層用前駆体を提供する。
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に前記光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップとを含む有機-無機複合太陽電池の製造方法を提供する。
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機-無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%~5wt%含まれるものである有機-無機複合太陽電池を提供する。
20:第1共通層
30:光吸収層
40:第2共通層
50:第2電極
R1X1
R2aR3(1-a)X2eX3(1-e)
前記化学式1~3において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
X1~X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
eは、0<e<1の実数であり、
e'は、0<e'<1の実数である。
M1X62
X6は、ハロゲンイオンである。
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に前記光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップとを含む有機-無機複合太陽電池の製造方法を提供する。
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機-無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系有機化合物を含み、
前記フッ素系有機化合物は、光吸収層の質量対比0.005wt%~5wt%含まれるものである有機-無機複合太陽電池を提供する。
R1M1X13
R2aR3(1-a)M2X2zX3(3-z)
R4bR5cR6dM3X4z'X5(3-z')
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1~M3は、互いに同一または異なり、それぞれ独立して、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1~X5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。
Claims (7)
- ペロブスカイト前駆体;および
前記ペロブスカイト前駆体対比0.005wt%~0.5wt%のフッ素系界面活性剤
を含み、
前記フッ素系界面活性剤の主鎖は、パーフルオロアルキル基を含むものである、
光吸収層用前駆体。 - 前記ペロブスカイト前駆体は、有機ハロゲン化物および金属ハロゲン化物を含むものである、
請求項1に記載の光吸収層用前駆体。 - 前記有機ハロゲン化物は、下記化学式1~3のうちのいずれか1つで表されるものである、
請求項2に記載の光吸収層用前駆体:
[化学式1]
R1X1
[化学式2]
R2aR3(1-a)X2eX3(1-e)
[化学式3]
R4bR5cR6dX4e'X5(1-e')
前記化学式1~3において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
X1は、ハロゲンイオンであり、
X2およびX3は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
X4およびX5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
eは、0<e<1の実数であり、
e'は、0<e'<1の実数である。 - 前記金属ハロゲン化物は、下記化学式4で表されるものである、
請求項2に記載の光吸収層用前駆体:
[化学式4]
M1X62
前記化学式4において、
M1は、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X6は、ハロゲンイオンである。 - 第1電極を用意するステップと、
前記第1電極上に第1共通層を形成するステップと、
前記第1共通層上に請求項1~4のいずれか1項に記載の光吸収層用前駆体をコーティングして光吸収層を形成するステップと、
前記光吸収層上に第2共通層を形成するステップと、
前記第2共通層上に第2電極を形成するステップと
を含む
有機-無機複合太陽電池の製造方法。 - 第1電極と、
前記第1電極上に備えられた第1共通層と、
前記第1共通層上に備えられた光吸収層と、
前記光吸収層上に備えられた第2共通層と、
前記第2共通層上に備えられた第2電極とを含む有機-無機複合太陽電池において、
前記光吸収層は、ペロブスカイト構造の化合物;およびフッ素系界面活性剤を含み、
前記フッ素系界面活性剤は、光吸収層の質量対比0.005wt%~0.5wt%含まれ、
前記フッ素系界面活性剤の主鎖は、パーフルオロアルキル基を含むものである、
有機-無機複合太陽電池。 - 前記ペロブスカイト構造の化合物は、下記化学式5~7のうちのいずれか1つで表されるものである、
請求項6に記載の有機-無機複合太陽電池:
[化学式5]
R1M1X13
[化学式6]
R2aR3(1-a)M2X2zX3(3-z)
[化学式7]
R4bR5cR6dM3X4z'X5(3-z')
前記化学式5~7において、
R2およびR3は、互いに異なり、
R4、R5およびR6は、互いに異なり、
R1~R6は、それぞれCnH2n+1NH3 +、NH4 +、HC(NH2)2 +、Cs+、NF4 +、NCl4 +、PF4 +、PCl4 +、CH3PH3 +、CH3AsH3 +、CH3SbH3 +、PH4 +、AsH4 +、およびSbH4 +から選択される1価の陽イオンであり、
M1~M3は、それぞれ、Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Bi2+、Pb2+、およびYb2+から選択される2価の金属イオンであり、
X1は、ハロゲンイオンであり、
X2およびX3は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
X4およびX5は、互いに同一または異なり、それぞれ独立して、ハロゲンイオンであり、
nは、1~9の整数であり、
aは、0<a<1の実数であり、
bは、0<b<1の実数であり、
cは、0<c<1の実数であり、
dは、0<d<1の実数であり、
b+c+dは、1であり、
zは、0<z<3の実数であり、
z'は、0<z'<3の実数である。
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PCT/KR2018/015607 WO2019132318A1 (ko) | 2017-12-26 | 2018-12-10 | 광흡수층용 전구체, 이를 이용한 유-무기 복합 태양전지 제조방법 및 유-무기 복합 태양전지 |
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US20170084399A1 (en) | 2014-02-26 | 2017-03-23 | Commonwealth Scientific And Industrial Research Organiztion | Process of forming a photoactive layer of a perovskite photoactive device |
KR101746335B1 (ko) | 2016-03-29 | 2017-06-21 | 포항공과대학교 산학협력단 | 금속 할라이드 페로브스카이트 나노결정입자 박막 제조방법 및 이를 이용한 광전자 소자 |
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