JP2021522673A - 高温用途のためのバリスタ - Google Patents
高温用途のためのバリスタ Download PDFInfo
- Publication number
- JP2021522673A JP2021522673A JP2020556954A JP2020556954A JP2021522673A JP 2021522673 A JP2021522673 A JP 2021522673A JP 2020556954 A JP2020556954 A JP 2020556954A JP 2020556954 A JP2020556954 A JP 2020556954A JP 2021522673 A JP2021522673 A JP 2021522673A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- less
- mol
- varistor according
- grain boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 46
- 239000003989 dielectric material Substances 0.000 claims abstract description 41
- 239000011787 zinc oxide Substances 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 230000015556 catabolic process Effects 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- -1 alkaline earth metal carbonate Chemical class 0.000 claims description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 5
- 239000004327 boric acid Substances 0.000 claims description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 21
- 239000000654 additive Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 229910052761 rare earth metal Inorganic materials 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 150000002910 rare earth metals Chemical class 0.000 description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- 229910052772 Samarium Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910052692 Dysprosium Inorganic materials 0.000 description 5
- 229910052693 Europium Inorganic materials 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 5
- 229910052775 Thulium Inorganic materials 0.000 description 5
- 229910052769 Ytterbium Inorganic materials 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 5
- 239000011133 lead Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- 150000003624 transition metals Chemical class 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 4
- 229910052765 Lutetium Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical group [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- UQONAEXHTGDOIH-AWEZNQCLSA-N O=C(N1CC[C@@H](C1)N1CCCC1=O)C1=CC2=C(NC3(CC3)CCO2)N=C1 Chemical compound O=C(N1CC[C@@H](C1)N1CCCC1=O)C1=CC2=C(NC3(CC3)CCO2)N=C1 UQONAEXHTGDOIH-AWEZNQCLSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000011656 manganese carbonate Substances 0.000 description 3
- 229940093474 manganese carbonate Drugs 0.000 description 3
- 235000006748 manganese carbonate Nutrition 0.000 description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 3
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000299 transition metal carbonate Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 2
- 150000008041 alkali metal carbonates Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000009021 linear effect Effects 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
【選択図】図4
Description
[0015]当業者であれば、本議論は代表的な実施形態の説明にすぎず、本発明のより広い態様を限定することは意図しないことを理解する。
[0042]かかる正温度係数の材料は、上述の添加剤、例えば金属酸化物及び酸の金属塩の言及した量で誘電材料中に存在させることができる。
試験方法:
[0058]以下のセクションは、種々のバリスタ特性を求めるためにバリスタを試験する方法の例を与える。
V=CIβ
にしたがう電圧を示し得る。
V=IR
にある。
[0065]本明細書で規定されるバリスタを、下記及び下表に示す仕様にしたがって製造した。23℃の室温において、ブレークダウン電圧、クランプ電圧、キャパシタンス、及び漏れ電流を求めた。
Claims (24)
- 酸化亜鉛結晶粒、及び前記酸化亜鉛結晶粒の間の粒界層から構成される焼結セラミックを含む誘電材料を含むバリスタであって、前記粒界層は、前記粒界層を基準として10モル%未満の量の正温度係数サーミスタ材料を含む、バリスタ。
- 前記粒界層が、前記粒界層を基準として5モル%以下の量の正温度係数サーミスタ材料を含む、請求項1に記載のバリスタ。
- 前記粒界層が、前記粒界層を基準として0.1モル%〜8モル%の量の正温度係数サーミスタ材料を含む、請求項1に記載のバリスタ。
- 前記粒界層が、前記粒界層を基準として4モル%〜6モル%の量の正温度係数サーミスタ材料を含む、請求項1に記載のバリスタ。
- 前記正温度係数サーミスタ材料がチタン酸塩を含む、請求項1に記載のバリスタ。
- 前記チタン酸塩がチタン酸バリウムを含む、請求項5に記載のバリスタ。
- 前記正温度係数サーミスタ材料がアルカリ土類金属炭酸塩を含む、請求項1に記載のバリスタ。
- 前記アルカリ土類金属炭酸塩が炭酸カルシウムを含む、請求項7に記載のバリスタ。
- 前記正温度係数サーミスタ材料が希土類金属酸化物を含む、請求項1に記載のバリスタ。
- 前記希土類金属酸化物が酸化ランタンを含む、請求項9に記載のバリスタ。
- 前記誘電材料がホウ素含有化合物を含む、請求項1に記載のバリスタ。
- 前記ホウ素含有化合物がホウ素含有酸を含む、請求項11に記載のバリスタ。
- 前記ホウ素含有酸がホウ酸を含む、請求項12に記載のバリスタ。
- 前記バリスタが125℃より高く300℃までの最高使用温度を有する、請求項1に記載のバリスタ。
- 前記バリスタが150℃〜250℃の最高使用温度を有する、請求項1に記載のバリスタ。
- 前記バリスタが160℃〜200℃の最高使用温度を有する、請求項1に記載のバリスタ。
- 前記バリスタが約10ボルト〜約200ボルトのクランプ電圧を有する、請求項1に記載のバリスタ。
- 前記バリスタが約10ボルト〜約150ボルトのブレークダウン電圧を有する、請求項1に記載のバリスタ。
- 前記バリスタが、18ボルトの動作電圧において約1μA以下の漏れ電流を有する、請求項1に記載のバリスタ。
- 前記バリスタが、18ボルトの動作電圧において約0.1μA〜約0.6μAの漏れ電流を有する、請求項1に記載のバリスタ。
- 前記バリスタが約0.1pF〜約50,000pFのキャパシタンスを有する、請求項1に記載のバリスタ。
- 前記バリスタが約250pF〜約750pFのキャパシタンスを有する、請求項1に記載のバリスタ。
- 酸化亜鉛を焼成することによって誘電材料を形成すること;及び
次に焼成した酸化亜鉛を正温度係数サーミスタ材料と混合すること;
を含む、請求項1に記載のバリスタを形成する方法。 - 前記焼成工程の後に酸化ビスマスを混合することを更に含む、請求項23に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023175712A JP2023179653A (ja) | 2018-04-17 | 2023-10-11 | 高温用途のためのバリスタ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862658685P | 2018-04-17 | 2018-04-17 | |
US62/658,685 | 2018-04-17 | ||
PCT/US2019/027862 WO2019204430A1 (en) | 2018-04-17 | 2019-04-17 | Varistor for high temperature applications |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023175712A Division JP2023179653A (ja) | 2018-04-17 | 2023-10-11 | 高温用途のためのバリスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2021522673A true JP2021522673A (ja) | 2021-08-30 |
Family
ID=68160562
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020556954A Pending JP2021522673A (ja) | 2018-04-17 | 2019-04-17 | 高温用途のためのバリスタ |
JP2023175712A Pending JP2023179653A (ja) | 2018-04-17 | 2023-10-11 | 高温用途のためのバリスタ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023175712A Pending JP2023179653A (ja) | 2018-04-17 | 2023-10-11 | 高温用途のためのバリスタ |
Country Status (5)
Country | Link |
---|---|
US (2) | US10790075B2 (ja) |
JP (2) | JP2021522673A (ja) |
CN (1) | CN111971759B (ja) |
DE (1) | DE112019002039T5 (ja) |
WO (1) | WO2019204430A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111971759B (zh) * | 2018-04-17 | 2023-05-02 | 京瓷Avx元器件公司 | 用于高温应用的变阻器 |
CN117894535A (zh) * | 2022-10-14 | 2024-04-16 | 东莞令特电子有限公司 | 热保护金属氧化物压敏电阻 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5386498A (en) * | 1977-01-07 | 1978-07-29 | Matsushita Electric Ind Co Ltd | Manufacturing for voltage non-linear resistors |
JPS577903A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Method of producing voltage non-linear resistor |
JPS5823921B2 (ja) * | 1978-02-10 | 1983-05-18 | 日本電気株式会社 | 電圧非直線抵抗器 |
JPS60223101A (ja) * | 1984-04-19 | 1985-11-07 | 三菱電機株式会社 | 酸化亜鉛型バリスタ体及びその製造方法 |
JPH09251905A (ja) * | 1996-03-14 | 1997-09-22 | Tama Electric Co Ltd | 電圧非直線抵抗体の製造方法 |
JP2002064008A (ja) * | 2000-08-18 | 2002-02-28 | Matsushita Electric Ind Co Ltd | バリスタおよびその製造方法 |
JP2012060099A (ja) * | 2010-09-03 | 2012-03-22 | Leader Well Technology Co Ltd | 高温動作酸化亜鉛サージ防止素子 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267005A (ja) | 1992-01-22 | 1993-10-15 | Shinagawa Refract Co Ltd | 正特性サーミスタ及びその製造方法 |
US6359327B1 (en) | 1998-03-05 | 2002-03-19 | Murata Manufacturing Co., Ltd. | Monolithic electronic element fabricated from semiconducting ceramic |
JP3376911B2 (ja) | 1998-03-05 | 2003-02-17 | 株式会社村田製作所 | 半導体セラミックおよび半導体セラミック素子 |
JP2000095562A (ja) | 1998-07-24 | 2000-04-04 | Murata Mfg Co Ltd | 正特性サ―ミスタ用原料組成物、正特性サ―ミスタ用磁器、および正特性サ―ミスタ用磁器の製造方法 |
JP2000143338A (ja) | 1998-11-11 | 2000-05-23 | Murata Mfg Co Ltd | 半導体セラミックおよびそれを用いた半導体セラミック素子 |
JP2001048643A (ja) | 1999-08-11 | 2001-02-20 | Murata Mfg Co Ltd | 半導体磁器および半導体磁器素子 |
JP2001167904A (ja) | 1999-12-09 | 2001-06-22 | Murata Mfg Co Ltd | 半導体磁器およびそれを用いた電子部品 |
JP2001220230A (ja) | 2000-02-09 | 2001-08-14 | Murata Mfg Co Ltd | 誘電体磁器組成物 |
JP3855611B2 (ja) | 2000-07-21 | 2006-12-13 | 株式会社村田製作所 | 半導体セラミック及び正特性サーミスタ |
JP3757794B2 (ja) | 2000-12-26 | 2006-03-22 | 株式会社村田製作所 | サーミスタ用半導体磁器及びそれを用いたチップ型サーミスタ |
JP3601459B2 (ja) | 2001-02-23 | 2004-12-15 | 株式会社村田製作所 | 正特性サーミスタ装置 |
JP4200765B2 (ja) | 2002-02-28 | 2008-12-24 | 株式会社村田製作所 | 積層型セラミック電子部品の製造方法 |
JP4039266B2 (ja) | 2002-03-26 | 2008-01-30 | 株式会社村田製作所 | 面実装型正特性サーミスタ |
JP4135651B2 (ja) | 2003-03-26 | 2008-08-20 | 株式会社村田製作所 | 積層型正特性サーミスタ |
JP2007048764A (ja) | 2003-10-30 | 2007-02-22 | Murata Mfg Co Ltd | 積層型正特性サーミスタおよびその設計方法 |
EP1939898B1 (en) | 2005-09-20 | 2018-04-25 | Murata Manufacturing Co., Ltd. | Multilayer positive temperature coefficient thermistor |
EP1939899B1 (en) | 2005-09-20 | 2016-12-21 | Murata Manufacturing Co., Ltd. | Stacked positive coefficient thermistor |
JPWO2007043360A1 (ja) | 2005-10-11 | 2009-04-16 | 株式会社村田製作所 | 正特性サーミスタ装置 |
TWI312602B (en) * | 2006-02-09 | 2009-07-21 | Energetic Technology Co | Varistor and method for producing the same |
US8026787B2 (en) * | 2006-03-10 | 2011-09-27 | Joinset Co., Ltd. | Ceramic component element and ceramic component and method for the same |
EP2067755A4 (en) | 2006-09-28 | 2016-02-10 | Murata Manufacturing Co | BARIUM TITANATE SEMICONDUCTOR PORCELAIN COMPOSITION AND PTC DEVICE USING THE SAME |
TW200903527A (en) | 2007-03-19 | 2009-01-16 | Murata Manufacturing Co | Laminated positive temperature coefficient thermistor |
KR101149634B1 (ko) | 2007-06-14 | 2012-05-25 | 가부시키가이샤 무라타 세이사쿠쇼 | 반도체 세라믹 재료 |
TWI402864B (zh) * | 2008-07-11 | 2013-07-21 | Sfi Electronics Technology Inc | 一種氧化鋅變阻器的製法 |
JP5223927B2 (ja) | 2008-09-30 | 2013-06-26 | 株式会社村田製作所 | チタン酸バリウム系半導体磁器組成物及びptcサーミスタ |
WO2010067866A1 (ja) | 2008-12-12 | 2010-06-17 | 株式会社 村田製作所 | 半導体セラミック及び正特性サーミスタ |
JP5327556B2 (ja) | 2008-12-12 | 2013-10-30 | 株式会社村田製作所 | 半導体セラミック及び正特性サーミスタ |
KR101178971B1 (ko) | 2008-12-12 | 2012-08-31 | 가부시키가이샤 무라타 세이사쿠쇼 | 반도체 세라믹 및 정특성 서미스터 |
EP2377836B1 (en) | 2008-12-12 | 2018-07-25 | Murata Manufacturing Co., Ltd. | Semiconductor ceramic and positive temperature coefficient thermistor |
JP5413458B2 (ja) | 2009-06-05 | 2014-02-12 | 株式会社村田製作所 | チタン酸バリウム系半導体磁器組成物およびチタン酸バリウム系半導体磁器素子 |
WO2011002021A1 (ja) | 2009-07-01 | 2011-01-06 | 株式会社村田製作所 | 半導体セラミックおよび正特性サーミスタ |
US20130011963A1 (en) * | 2009-07-09 | 2013-01-10 | Sfi Electronics Technology Inc. | Process for producing zinc oxide varistor |
CN101630553B (zh) * | 2009-07-17 | 2011-10-12 | 立昌先进科技股份有限公司 | 一种氧化锌变阻器的制备方法 |
WO2012035938A1 (ja) | 2010-09-14 | 2012-03-22 | 株式会社村田製作所 | 半導体セラミック素子およびその製造方法 |
CN102020463B (zh) * | 2010-11-10 | 2013-06-12 | 中国科学院宁波材料技术与工程研究所 | 一种氧化锌压敏电阻材料及其制备方法 |
TW201221501A (en) * | 2010-11-26 | 2012-06-01 | Sfi Electronics Technology Inc | Process for producing ZnO varistor particularly having internal electrode composed of pure silver and sintered at a lower sintering temperature |
TWI425532B (zh) * | 2011-11-29 | 2014-02-01 | Leader Well Technology Co Ltd | 一種使氧化鋅變阻器同時提高電位梯度及非線性係數的製法 |
WO2014017365A1 (ja) | 2012-07-25 | 2014-01-30 | 株式会社村田製作所 | 積層型ptcサーミスタ素子 |
WO2015019643A1 (ja) | 2013-08-08 | 2015-02-12 | 株式会社村田製作所 | サーミスタ素子 |
CN103632784B (zh) * | 2013-11-23 | 2016-04-13 | 华中科技大学 | 一种叠层片式热压敏复合电阻器及其制备方法 |
US9741477B2 (en) * | 2013-12-06 | 2017-08-22 | Hitachi Metals, Ltd. | Sintered body for varistor, multilayer substrate using same, and production method for these |
KR101968992B1 (ko) | 2015-05-04 | 2019-04-15 | 주식회사 아모텍 | 바리스터 세라믹 및 이의 제조방법 |
CN111971759B (zh) * | 2018-04-17 | 2023-05-02 | 京瓷Avx元器件公司 | 用于高温应用的变阻器 |
-
2019
- 2019-04-17 CN CN201980025660.6A patent/CN111971759B/zh active Active
- 2019-04-17 DE DE112019002039.0T patent/DE112019002039T5/de active Pending
- 2019-04-17 JP JP2020556954A patent/JP2021522673A/ja active Pending
- 2019-04-17 US US16/386,564 patent/US10790075B2/en active Active
- 2019-04-17 WO PCT/US2019/027862 patent/WO2019204430A1/en active Application Filing
-
2020
- 2020-08-26 US US17/003,206 patent/US10998114B2/en active Active
-
2023
- 2023-10-11 JP JP2023175712A patent/JP2023179653A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5386498A (en) * | 1977-01-07 | 1978-07-29 | Matsushita Electric Ind Co Ltd | Manufacturing for voltage non-linear resistors |
JPS5823921B2 (ja) * | 1978-02-10 | 1983-05-18 | 日本電気株式会社 | 電圧非直線抵抗器 |
JPS577903A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Method of producing voltage non-linear resistor |
JPS60223101A (ja) * | 1984-04-19 | 1985-11-07 | 三菱電機株式会社 | 酸化亜鉛型バリスタ体及びその製造方法 |
JPH09251905A (ja) * | 1996-03-14 | 1997-09-22 | Tama Electric Co Ltd | 電圧非直線抵抗体の製造方法 |
JP2002064008A (ja) * | 2000-08-18 | 2002-02-28 | Matsushita Electric Ind Co Ltd | バリスタおよびその製造方法 |
JP2012060099A (ja) * | 2010-09-03 | 2012-03-22 | Leader Well Technology Co Ltd | 高温動作酸化亜鉛サージ防止素子 |
Also Published As
Publication number | Publication date |
---|---|
CN111971759A (zh) | 2020-11-20 |
US10998114B2 (en) | 2021-05-04 |
US20190318853A1 (en) | 2019-10-17 |
CN111971759B (zh) | 2023-05-02 |
US10790075B2 (en) | 2020-09-29 |
JP2023179653A (ja) | 2023-12-19 |
WO2019204430A1 (en) | 2019-10-24 |
US20200395152A1 (en) | 2020-12-17 |
DE112019002039T5 (de) | 2021-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109285698B (zh) | 多层陶瓷电容器及其制造方法 | |
JP6332648B2 (ja) | 誘電体磁器組成物及びこれを含む積層セラミックキャパシタ | |
KR102292797B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
JP2023179653A (ja) | 高温用途のためのバリスタ | |
KR101751177B1 (ko) | 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
KR930012272B1 (ko) | 적층형 입계 절연형 반도체 세라믹콘덴서 및 그 제조방법 | |
CN108447684B (zh) | 多层陶瓷电容器及多层陶瓷电容器的制造方法 | |
KR102183423B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
KR102222944B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
EP3982385B1 (en) | Dielectric material and capacitor comprising the dielectric material | |
KR20090009149A (ko) | 배리스터 | |
EP3127889A1 (en) | Semiconductor ceramic composition and ptc thermistor | |
JP2012036080A (ja) | 耐還元性誘電体組成物及びこれを含むセラミック電子部品 | |
CN114823138A (zh) | 介电陶瓷组合物及包括其的多层陶瓷电容器 | |
JP6870803B2 (ja) | 誘電体磁器組成物及びこれを含む積層セラミックキャパシタ | |
KR20170078064A (ko) | 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
KR101963280B1 (ko) | 유전체 조성물 및 이를 포함하는 커패시터 | |
JP2705221B2 (ja) | セラミックコンデンサ及びその製造方法 | |
CN112759384A (zh) | 陶瓷组成物、陶瓷烧结体及叠层型陶瓷电子元件 | |
KR101548864B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
JP2707706B2 (ja) | 粒界絶縁型半導体セラミックコンデンサ及びその製造方法 | |
JPH05283209A (ja) | 積層型バリスタ | |
JP2707707B2 (ja) | 粒界絶縁型半導体セラミックコンデンサ及びその製造方法 | |
CN111517780A (zh) | 介电陶瓷组合物和包括其的多层陶瓷电容器 | |
JP2743448B2 (ja) | セラミックコンデンサ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220125 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230324 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230517 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231011 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20231024 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20231117 |