JP2021516723A5 - - Google Patents

Info

Publication number
JP2021516723A5
JP2021516723A5 JP2020544229A JP2020544229A JP2021516723A5 JP 2021516723 A5 JP2021516723 A5 JP 2021516723A5 JP 2020544229 A JP2020544229 A JP 2020544229A JP 2020544229 A JP2020544229 A JP 2020544229A JP 2021516723 A5 JP2021516723 A5 JP 2021516723A5
Authority
JP
Japan
Prior art keywords
temperature
sublimation
value
carrier gas
precursor material
Prior art date
Application number
JP2020544229A
Other languages
English (en)
Japanese (ja)
Other versions
JP7576464B2 (ja
JPWO2019177851A5 (https=
JP2021516723A (ja
Filing date
Publication date
Priority claimed from US16/260,378 external-priority patent/US11168394B2/en
Application filed filed Critical
Publication of JP2021516723A publication Critical patent/JP2021516723A/ja
Publication of JP2021516723A5 publication Critical patent/JP2021516723A5/ja
Publication of JPWO2019177851A5 publication Critical patent/JPWO2019177851A5/ja
Application granted granted Critical
Publication of JP7576464B2 publication Critical patent/JP7576464B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020544229A 2018-03-14 2019-03-07 昇華によって正確な濃度の蒸気を生成する方法および装置 Active JP7576464B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862642982P 2018-03-14 2018-03-14
US62/642,982 2018-03-14
US16/260,378 2019-01-29
US16/260,378 US11168394B2 (en) 2018-03-14 2019-01-29 Method and apparatus for making a vapor of precise concentration by sublimation
PCT/US2019/021074 WO2019177851A1 (en) 2018-03-14 2019-03-07 Method and apparatus for making a vapor of precise concentration by sublimation

Publications (4)

Publication Number Publication Date
JP2021516723A JP2021516723A (ja) 2021-07-08
JP2021516723A5 true JP2021516723A5 (https=) 2022-03-10
JPWO2019177851A5 JPWO2019177851A5 (https=) 2022-03-10
JP7576464B2 JP7576464B2 (ja) 2024-10-31

Family

ID=67904522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020544229A Active JP7576464B2 (ja) 2018-03-14 2019-03-07 昇華によって正確な濃度の蒸気を生成する方法および装置

Country Status (5)

Country Link
US (2) US11168394B2 (https=)
EP (1) EP3765418A4 (https=)
JP (1) JP7576464B2 (https=)
CN (1) CN111770900B (https=)
WO (1) WO2019177851A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112553930B (zh) * 2020-12-31 2023-04-07 濮阳圣恺环保新材料科技股份有限公司 一种利用可控温激光照射进行分散染料印花染色的工艺
FI130131B (en) 2021-09-07 2023-03-09 Picosun Oy Precursor container
TW202432241A (zh) * 2022-10-13 2024-08-16 荷蘭商Asm Ip私人控股有限公司 蒸氣遞送設備、氣相反應器及用於監測及控制蒸氣遞送系統之方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1008667A (en) 1972-06-30 1977-04-19 Foster Wheeler Corporation Catalytic steam reforming
US5377429A (en) 1993-04-19 1995-01-03 Micron Semiconductor, Inc. Method and appartus for subliming precursors
US5553395A (en) 1995-05-31 1996-09-10 Hughes Aircraft Company Bubbler for solid metal organic source material and method of producing saturated carrying gas
US5764849A (en) 1996-03-27 1998-06-09 Micron Technology, Inc. Solid precursor injector apparatus and method
US6161398A (en) 1998-04-09 2000-12-19 Lucent Technologies, Inc. Methods of and systems for vapor delivery control in optical preform manufacture
TW451275B (en) * 1999-06-22 2001-08-21 Tokyo Electron Ltd Metal organic chemical vapor deposition method and apparatus
US6984415B2 (en) 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
JP3909792B2 (ja) 1999-08-20 2007-04-25 パイオニア株式会社 化学気相成長法における原料供給装置及び原料供給方法
JP4866527B2 (ja) 2000-03-23 2012-02-01 新日鐵化学株式会社 昇華精製方法
US20030030010A1 (en) 2001-08-07 2003-02-13 Perel Alexander S. Decaborane vaporizer having improved vapor flow
US6701066B2 (en) 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
JP4585852B2 (ja) * 2002-07-30 2010-11-24 エーエスエム アメリカ インコーポレイテッド 基板処理システム、基板処理方法及び昇華装置
US6797337B2 (en) 2002-08-19 2004-09-28 Micron Technology, Inc. Method for delivering precursors
JP5152105B2 (ja) 2002-08-23 2013-02-27 東京エレクトロン株式会社 処理システム
US7147713B2 (en) 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
JP4013859B2 (ja) 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
WO2005113857A1 (en) 2004-05-20 2005-12-01 Akzo Nobel N.V. Bubbler for constant vapor delivery of a solid chemical
FR2878453B1 (fr) 2004-11-30 2007-03-16 Centre Nat Rech Scient Cnrse Dispositif de fourniture de vapeurs d'un precurseur solide a un appareil de traitement
US8197898B2 (en) 2005-03-29 2012-06-12 Tokyo Electron Limited Method and system for depositing a layer from light-induced vaporization of a solid precursor
US7651570B2 (en) 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
JP4317174B2 (ja) 2005-09-21 2009-08-19 東京エレクトロン株式会社 原料供給装置および成膜装置
EP1860208B1 (en) 2006-05-22 2014-10-15 Rohm and Haas Electronic Materials LLC Film deposition method
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
EP2094406B1 (en) 2006-11-22 2015-10-14 Soitec Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material
JP5306993B2 (ja) 2007-03-30 2013-10-02 東京エレクトロン株式会社 蒸着源ユニット、蒸着装置および蒸着源ユニットの温度調整装置
US8440021B2 (en) 2007-08-16 2013-05-14 The Regents Of The University Of Michigan Apparatus and method for deposition for organic thin films
US9034105B2 (en) 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
JP5257197B2 (ja) 2008-03-31 2013-08-07 住友化学株式会社 有機金属化合物供給装置
JP4966922B2 (ja) * 2008-07-07 2012-07-04 東京エレクトロン株式会社 レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法
US8343583B2 (en) 2008-07-10 2013-01-01 Asm International N.V. Method for vaporizing non-gaseous precursor in a fluidized bed
JP5779171B2 (ja) 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド SiC単結晶の昇華成長方法及び装置
US20130089934A1 (en) * 2011-10-07 2013-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Material Delivery System and Method
KR101389011B1 (ko) * 2012-03-28 2014-04-24 주식회사 유니텍스 소스 컨테이너 및 기상 증착용 반응로
JP2015134305A (ja) 2012-03-30 2015-07-27 出光興産株式会社 有機材料の精製装置
WO2016160665A1 (en) * 2015-03-30 2016-10-06 Siva Power, Inc Fluid-assisted thermal management of evaporation sources
US9869018B2 (en) 2016-04-26 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Solid precursor delivery method using liquid solvent for thin film deposition

Similar Documents

Publication Publication Date Title
JP2021516723A5 (https=)
TWI579674B (zh) 用於控制在處理腔室中之多個區域加熱器之溫度之方法及裝置
TW201741495A (zh) 前驅物之供給系統及前驅物之供給方法
TWI481740B (zh) Raw material gasification supply device
CN102640070B (zh) 压力式流量控制装置
JP5010414B2 (ja) 基板処理システム,基板処理装置の制御方法,およびプログラム
TWI537418B (zh) 在一製程機台的多重區域中控制壓力的方法及裝置
CN109964194A (zh) 用于基于压力的自校正质量流量控制器的装置和方法
JP6752332B2 (ja) 基板処理装置、半導体装置の製造方法及びプログラム
JP3836696B2 (ja) 半導体製造システムおよび半導体装置の製造方法
JP2013517387A (ja) パルス状ガスの送出の制御および方法
US8354135B2 (en) Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program
TW202124920A (zh) 低溫熱流量比控制器
JP3604354B2 (ja) 質量流量測定方法および質量流量制御装置
US20040144488A1 (en) Semiconductor wafer processing apparatus
JP3785352B2 (ja) ホットプレスの温度制御方法
US20130256293A1 (en) Heat treatment system, heat treatment method, and non-transitory computer-readable recording medium
JPWO2019177851A5 (https=)
CN111770900B (zh) 通过升华制备具有精确浓度的蒸气的方法和设备
JP2020523549A5 (https=)
JP5041009B2 (ja) 熱処理装置、熱処理方法及び記憶媒体
TWI815971B (zh) 多工式基於高電阻溫度係數的安瓿加熱器
JP2934883B2 (ja) 気化方式によるガス発生装置
JPWO2021222292A5 (https=)
JP4542643B2 (ja) ガス供給装置およびガス供給方法