JP7576464B2 - 昇華によって正確な濃度の蒸気を生成する方法および装置 - Google Patents

昇華によって正確な濃度の蒸気を生成する方法および装置 Download PDF

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JP7576464B2
JP7576464B2 JP2020544229A JP2020544229A JP7576464B2 JP 7576464 B2 JP7576464 B2 JP 7576464B2 JP 2020544229 A JP2020544229 A JP 2020544229A JP 2020544229 A JP2020544229 A JP 2020544229A JP 7576464 B2 JP7576464 B2 JP 7576464B2
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value
temperature
carrier gas
sublimation
precursor
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JP2021516723A5 (https=
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ジー ウォールク エグバート
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Ceeveetech LLC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2020544229A 2018-03-14 2019-03-07 昇華によって正確な濃度の蒸気を生成する方法および装置 Active JP7576464B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862642982P 2018-03-14 2018-03-14
US62/642,982 2018-03-14
US16/260,378 2019-01-29
US16/260,378 US11168394B2 (en) 2018-03-14 2019-01-29 Method and apparatus for making a vapor of precise concentration by sublimation
PCT/US2019/021074 WO2019177851A1 (en) 2018-03-14 2019-03-07 Method and apparatus for making a vapor of precise concentration by sublimation

Publications (4)

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JP2021516723A JP2021516723A (ja) 2021-07-08
JP2021516723A5 JP2021516723A5 (https=) 2022-03-10
JPWO2019177851A5 JPWO2019177851A5 (https=) 2022-03-10
JP7576464B2 true JP7576464B2 (ja) 2024-10-31

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US (2) US11168394B2 (https=)
EP (1) EP3765418A4 (https=)
JP (1) JP7576464B2 (https=)
CN (1) CN111770900B (https=)
WO (1) WO2019177851A1 (https=)

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CN112553930B (zh) * 2020-12-31 2023-04-07 濮阳圣恺环保新材料科技股份有限公司 一种利用可控温激光照射进行分散染料印花染色的工艺
FI130131B (en) 2021-09-07 2023-03-09 Picosun Oy Precursor container
TW202432241A (zh) * 2022-10-13 2024-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 蒸氣遞送設備、氣相反應器及用於監測及控制蒸氣遞送系統之方法

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JP2009239297A (ja) 2002-08-23 2009-10-15 Tokyo Electron Ltd 処理システム
JP2009267388A (ja) 2008-03-31 2009-11-12 Sumitomo Chemical Co Ltd 有機金属化合物供給装置
JP2010502833A (ja) 2006-08-31 2010-01-28 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 制御された固体モルフォロジを利用する、固体前駆体に基づいた流体の送出

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JP2009239297A (ja) 2002-08-23 2009-10-15 Tokyo Electron Ltd 処理システム
JP2008522022A (ja) 2004-11-30 2008-06-26 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 固体前駆物質の蒸気を処理装置に供給する装置
JP2010502833A (ja) 2006-08-31 2010-01-28 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 制御された固体モルフォロジを利用する、固体前駆体に基づいた流体の送出
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Publication number Publication date
WO2019177851A1 (en) 2019-09-19
US20210262085A1 (en) 2021-08-26
EP3765418A4 (en) 2021-12-08
CN111770900A (zh) 2020-10-13
US20190284690A1 (en) 2019-09-19
CN111770900B (zh) 2022-10-18
US11965243B2 (en) 2024-04-23
EP3765418A1 (en) 2021-01-20
JP2021516723A (ja) 2021-07-08
US11168394B2 (en) 2021-11-09

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