CN111770900B - 通过升华制备具有精确浓度的蒸气的方法和设备 - Google Patents

通过升华制备具有精确浓度的蒸气的方法和设备 Download PDF

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Publication number
CN111770900B
CN111770900B CN201980014314.8A CN201980014314A CN111770900B CN 111770900 B CN111770900 B CN 111770900B CN 201980014314 A CN201980014314 A CN 201980014314A CN 111770900 B CN111770900 B CN 111770900B
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temperature
carrier gas
sublimation
value
pressure
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CN111770900A (zh
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埃格伯特·G·沃尔克
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Xiwei Technology Co ltd
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Xiwei Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201980014314.8A 2018-03-14 2019-03-07 通过升华制备具有精确浓度的蒸气的方法和设备 Active CN111770900B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862642982P 2018-03-14 2018-03-14
US62/642,982 2018-03-14
US16/260,378 2019-01-29
US16/260,378 US11168394B2 (en) 2018-03-14 2019-01-29 Method and apparatus for making a vapor of precise concentration by sublimation
PCT/US2019/021074 WO2019177851A1 (en) 2018-03-14 2019-03-07 Method and apparatus for making a vapor of precise concentration by sublimation

Publications (2)

Publication Number Publication Date
CN111770900A CN111770900A (zh) 2020-10-13
CN111770900B true CN111770900B (zh) 2022-10-18

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Country Link
US (2) US11168394B2 (https=)
EP (1) EP3765418A4 (https=)
JP (1) JP7576464B2 (https=)
CN (1) CN111770900B (https=)
WO (1) WO2019177851A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11873558B2 (en) 2021-09-07 2024-01-16 Picosun Oy Precursor container

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112553930B (zh) * 2020-12-31 2023-04-07 濮阳圣恺环保新材料科技股份有限公司 一种利用可控温激光照射进行分散染料印花染色的工艺
TW202432241A (zh) * 2022-10-13 2024-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 蒸氣遞送設備、氣相反應器及用於監測及控制蒸氣遞送系統之方法

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TW200403721A (en) * 2002-07-30 2004-03-01 Asm Inc An improved sublimation bed employing carrier gas guidance structures
WO2013145834A1 (ja) * 2012-03-30 2013-10-03 出光興産株式会社 有機材料の精製装置
US9034105B2 (en) * 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator

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US5553395A (en) 1995-05-31 1996-09-10 Hughes Aircraft Company Bubbler for solid metal organic source material and method of producing saturated carrying gas
US5764849A (en) 1996-03-27 1998-06-09 Micron Technology, Inc. Solid precursor injector apparatus and method
US6161398A (en) 1998-04-09 2000-12-19 Lucent Technologies, Inc. Methods of and systems for vapor delivery control in optical preform manufacture
TW451275B (en) * 1999-06-22 2001-08-21 Tokyo Electron Ltd Metal organic chemical vapor deposition method and apparatus
US6984415B2 (en) 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
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JP4866527B2 (ja) 2000-03-23 2012-02-01 新日鐵化学株式会社 昇華精製方法
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TW200403721A (en) * 2002-07-30 2004-03-01 Asm Inc An improved sublimation bed employing carrier gas guidance structures
US9034105B2 (en) * 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11873558B2 (en) 2021-09-07 2024-01-16 Picosun Oy Precursor container
US12146218B2 (en) 2021-09-07 2024-11-19 Picosun Oy Precursor container

Also Published As

Publication number Publication date
WO2019177851A1 (en) 2019-09-19
US20210262085A1 (en) 2021-08-26
EP3765418A4 (en) 2021-12-08
JP7576464B2 (ja) 2024-10-31
CN111770900A (zh) 2020-10-13
US20190284690A1 (en) 2019-09-19
US11965243B2 (en) 2024-04-23
EP3765418A1 (en) 2021-01-20
JP2021516723A (ja) 2021-07-08
US11168394B2 (en) 2021-11-09

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