JPWO2019021949A1 - 流体制御装置 - Google Patents
流体制御装置 Download PDFInfo
- Publication number
- JPWO2019021949A1 JPWO2019021949A1 JP2019532558A JP2019532558A JPWO2019021949A1 JP WO2019021949 A1 JPWO2019021949 A1 JP WO2019021949A1 JP 2019532558 A JP2019532558 A JP 2019532558A JP 2019532558 A JP2019532558 A JP 2019532558A JP WO2019021949 A1 JPWO2019021949 A1 JP WO2019021949A1
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- Prior art keywords
- heater
- unit
- fluid
- fluid control
- vaporization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012530 fluid Substances 0.000 title claims abstract description 103
- 238000010438 heat treatment Methods 0.000 claims abstract description 66
- 238000003860 storage Methods 0.000 claims abstract description 12
- 230000008016 vaporization Effects 0.000 claims description 66
- 238000009834 vaporization Methods 0.000 claims description 61
- 239000007788 liquid Substances 0.000 claims description 49
- 238000005259 measurement Methods 0.000 claims description 17
- 238000011144 upstream manufacturing Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 description 44
- 238000012546 transfer Methods 0.000 description 43
- 239000002994 raw material Substances 0.000 description 41
- 238000009835 boiling Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 239000006200 vaporizer Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/06—Preventing bumping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0064—Feeding of liquid into an evaporator
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K49/00—Means in or on valves for heating or cooling
- F16K49/002—Electric heating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/6416—With heating or cooling of the system
- Y10T137/6606—With electric heating element
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
2 予加熱部
3 液体充填用バルブ
4 気化部
5 流路ブロック
6 流体加熱部
10 ヒータ
13、13’ 断熱部材
56 ストップバルブ
100 流体制御装置
Claims (5)
- 内部に流路または流体収容部が設けられ互いに接続された複数の流体加熱部と、
前記複数の流体加熱部を異なる温度に加熱するように構成されたヒータと、
隣接する流体加熱部の間に配置された断熱部材と
を備える流体制御装置。 - 前記複数の流体加熱部は、気化部と、前記気化部に供給される液体を予加熱する予加熱部と、前記気化部から送出されたガスを制御または測定する流体制御測定部とを含み、隣接する前記気化部と前記予加熱部との間に前記断熱部材が配置されている、請求項1に記載の流体制御装置。
- 前記流体制御測定部の下流側に設けられたストップバルブをさらに有し、前記ストップバルブのバルブ下流側流路とバルブ上流側流路との間に、更なる断熱部材が設けられている、請求項2に記載の流体制御装置。
- 前記ヒータは、前記予加熱部を加熱する第1ヒータと、前記気化部を加熱する第2ヒータと、前記流体制御測定部を加熱する第3ヒータとを含み、前記予加熱部、前記気化部および前記流体制御測定部をそれぞれ独立して加熱するように構成されている、請求項2または3に記載の流体制御装置。
- 前記第1ヒータと前記第2ヒータとの間には隙間が設けられ、前記断熱部材は前記第1ヒータと前記第2ヒータとの間の隙間の位置に設けられている、請求項4に記載の流体制御装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017144027 | 2017-07-25 | ||
JP2017144027 | 2017-07-25 | ||
PCT/JP2018/027234 WO2019021949A1 (ja) | 2017-07-25 | 2018-07-20 | 流体制御装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019021949A1 true JPWO2019021949A1 (ja) | 2020-06-11 |
JP7097085B2 JP7097085B2 (ja) | 2022-07-07 |
Family
ID=65041169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019532558A Active JP7097085B2 (ja) | 2017-07-25 | 2018-07-20 | 流体制御装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11390951B2 (ja) |
JP (1) | JP7097085B2 (ja) |
KR (1) | KR102363117B1 (ja) |
CN (1) | CN110914470A (ja) |
TW (1) | TWI671426B (ja) |
WO (1) | WO2019021949A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11346457B2 (en) | 2020-01-30 | 2022-05-31 | Fujikin Incorporated | Piezoelectric driven valve, pressure-type flow rate control device, and vaporization supply device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11079774B2 (en) * | 2017-11-30 | 2021-08-03 | Fujikin Incorporated | Flow rate control device |
WO2020218138A1 (ja) * | 2019-04-25 | 2020-10-29 | 株式会社フジキン | 流量制御装置 |
CN114269966A (zh) * | 2019-09-19 | 2022-04-01 | 株式会社富士金 | 气化供给装置 |
JP7470375B2 (ja) | 2020-03-30 | 2024-04-18 | 株式会社フジキン | 流体制御装置及びこれを用いた流体制御システム |
US20230124246A1 (en) * | 2021-10-19 | 2023-04-20 | Applied Materials, Inc. | Manifold for equal splitting and common divert architecture |
Citations (6)
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JPH1187327A (ja) * | 1997-06-25 | 1999-03-30 | Ebara Corp | 液体原料気化装置 |
JP2000282242A (ja) * | 1999-04-01 | 2000-10-10 | Tokyo Electron Ltd | 気化器、処理装置、処理方法、及び半導体チップの製造方法 |
JP2001152343A (ja) * | 1999-11-26 | 2001-06-05 | Nec Corp | 気化装置 |
JP2002217181A (ja) * | 2001-01-19 | 2002-08-02 | Japan Steel Works Ltd:The | 半導体原料供給用気化器 |
JP2005259723A (ja) * | 2004-02-13 | 2005-09-22 | Utec:Kk | 原料溶液吐出器、cvd用気化器、溶液気化式cvd装置、流量制御方法及び薄膜形成方法 |
JP2009246173A (ja) * | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | 気化器およびそれを用いた成膜装置 |
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JP3785516B2 (ja) * | 1997-03-07 | 2006-06-14 | 株式会社フジキン | 流体制御装置 |
JP4487135B2 (ja) * | 2001-03-05 | 2010-06-23 | 東京エレクトロン株式会社 | 流体制御装置 |
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JP5461786B2 (ja) * | 2008-04-01 | 2014-04-02 | 株式会社フジキン | 気化器を備えたガス供給装置 |
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JP5837869B2 (ja) | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
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-
2018
- 2018-07-20 CN CN201880046476.5A patent/CN110914470A/zh active Pending
- 2018-07-20 US US16/634,033 patent/US11390951B2/en active Active
- 2018-07-20 JP JP2019532558A patent/JP7097085B2/ja active Active
- 2018-07-20 KR KR1020197034367A patent/KR102363117B1/ko active IP Right Grant
- 2018-07-20 WO PCT/JP2018/027234 patent/WO2019021949A1/ja active Application Filing
- 2018-07-25 TW TW107125646A patent/TWI671426B/zh active
Patent Citations (6)
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JPH1187327A (ja) * | 1997-06-25 | 1999-03-30 | Ebara Corp | 液体原料気化装置 |
JP2000282242A (ja) * | 1999-04-01 | 2000-10-10 | Tokyo Electron Ltd | 気化器、処理装置、処理方法、及び半導体チップの製造方法 |
JP2001152343A (ja) * | 1999-11-26 | 2001-06-05 | Nec Corp | 気化装置 |
JP2002217181A (ja) * | 2001-01-19 | 2002-08-02 | Japan Steel Works Ltd:The | 半導体原料供給用気化器 |
JP2005259723A (ja) * | 2004-02-13 | 2005-09-22 | Utec:Kk | 原料溶液吐出器、cvd用気化器、溶液気化式cvd装置、流量制御方法及び薄膜形成方法 |
JP2009246173A (ja) * | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | 気化器およびそれを用いた成膜装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11346457B2 (en) | 2020-01-30 | 2022-05-31 | Fujikin Incorporated | Piezoelectric driven valve, pressure-type flow rate control device, and vaporization supply device |
Also Published As
Publication number | Publication date |
---|---|
US11390951B2 (en) | 2022-07-19 |
US20200199753A1 (en) | 2020-06-25 |
TW201908515A (zh) | 2019-03-01 |
WO2019021949A1 (ja) | 2019-01-31 |
KR20190140002A (ko) | 2019-12-18 |
CN110914470A (zh) | 2020-03-24 |
KR102363117B1 (ko) | 2022-02-15 |
TWI671426B (zh) | 2019-09-11 |
JP7097085B2 (ja) | 2022-07-07 |
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