JP2021184410A5 - - Google Patents
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- Publication number
- JP2021184410A5 JP2021184410A5 JP2020088724A JP2020088724A JP2021184410A5 JP 2021184410 A5 JP2021184410 A5 JP 2021184410A5 JP 2020088724 A JP2020088724 A JP 2020088724A JP 2020088724 A JP2020088724 A JP 2020088724A JP 2021184410 A5 JP2021184410 A5 JP 2021184410A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- process gas
- plasma
- nitride film
- titanium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 41
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims 42
- 238000005530 etching Methods 0.000 claims 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 6
- 229910052801 chlorine Inorganic materials 0.000 claims 6
- 239000000460 chlorine Substances 0.000 claims 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 5
- 239000012782 phase change material Substances 0.000 claims 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020088724A JP7482684B2 (ja) | 2020-05-21 | 2020-05-21 | エッチング方法及びプラズマ処理装置 |
| KR1020210059911A KR102920322B1 (ko) | 2020-05-21 | 2021-05-10 | 에칭 방법 및 플라즈마 처리 장치 |
| CN202110504734.3A CN113707551A (zh) | 2020-05-21 | 2021-05-10 | 蚀刻方法及等离子体处理装置 |
| TW110116867A TWI886273B (zh) | 2020-05-21 | 2021-05-11 | 蝕刻方法及電漿處理裝置 |
| US17/318,446 US11842900B2 (en) | 2020-05-21 | 2021-05-12 | Etching method and plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020088724A JP7482684B2 (ja) | 2020-05-21 | 2020-05-21 | エッチング方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021184410A JP2021184410A (ja) | 2021-12-02 |
| JP2021184410A5 true JP2021184410A5 (enExample) | 2023-04-07 |
| JP7482684B2 JP7482684B2 (ja) | 2024-05-14 |
Family
ID=78608340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020088724A Active JP7482684B2 (ja) | 2020-05-21 | 2020-05-21 | エッチング方法及びプラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11842900B2 (enExample) |
| JP (1) | JP7482684B2 (enExample) |
| KR (1) | KR102920322B1 (enExample) |
| CN (1) | CN113707551A (enExample) |
| TW (1) | TWI886273B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12119209B2 (en) * | 2021-10-11 | 2024-10-15 | Applied Materials, Inc. | Dynamic processing chamber baffle |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07263405A (ja) * | 1994-03-18 | 1995-10-13 | Oki Electric Ind Co Ltd | ドライエッチングの方法 |
| US6531404B1 (en) | 2000-08-04 | 2003-03-11 | Applied Materials Inc. | Method of etching titanium nitride |
| JP4783169B2 (ja) | 2006-02-13 | 2011-09-28 | パナソニック株式会社 | ドライエッチング方法、微細構造形成方法、モールド及びその製造方法 |
| JP4754380B2 (ja) * | 2006-03-27 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマエッチング方法、制御プログラム、記憶媒体及びプラズマ処理装置 |
| JP4764241B2 (ja) | 2006-04-17 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| US7682979B2 (en) | 2006-06-29 | 2010-03-23 | Lam Research Corporation | Phase change alloy etch |
| KR100854926B1 (ko) * | 2007-06-25 | 2008-08-27 | 주식회사 동부하이텍 | 반도체 소자용 마스크 |
| JP6328524B2 (ja) * | 2014-08-29 | 2018-05-23 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6339963B2 (ja) * | 2015-04-06 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10862031B2 (en) * | 2019-03-01 | 2020-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to effectively suppress heat dissipation in PCRAM devices |
-
2020
- 2020-05-21 JP JP2020088724A patent/JP7482684B2/ja active Active
-
2021
- 2021-05-10 KR KR1020210059911A patent/KR102920322B1/ko active Active
- 2021-05-10 CN CN202110504734.3A patent/CN113707551A/zh active Pending
- 2021-05-11 TW TW110116867A patent/TWI886273B/zh active
- 2021-05-12 US US17/318,446 patent/US11842900B2/en active Active
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