CN113707551A - 蚀刻方法及等离子体处理装置 - Google Patents

蚀刻方法及等离子体处理装置 Download PDF

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Publication number
CN113707551A
CN113707551A CN202110504734.3A CN202110504734A CN113707551A CN 113707551 A CN113707551 A CN 113707551A CN 202110504734 A CN202110504734 A CN 202110504734A CN 113707551 A CN113707551 A CN 113707551A
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CN
China
Prior art keywords
gas
plasma
titanium nitride
nitride film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110504734.3A
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English (en)
Chinese (zh)
Inventor
浅子龙一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN113707551A publication Critical patent/CN113707551A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202110504734.3A 2020-05-21 2021-05-10 蚀刻方法及等离子体处理装置 Pending CN113707551A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020088724A JP7482684B2 (ja) 2020-05-21 2020-05-21 エッチング方法及びプラズマ処理装置
JP2020-088724 2020-05-21

Publications (1)

Publication Number Publication Date
CN113707551A true CN113707551A (zh) 2021-11-26

Family

ID=78608340

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110504734.3A Pending CN113707551A (zh) 2020-05-21 2021-05-10 蚀刻方法及等离子体处理装置

Country Status (5)

Country Link
US (1) US11842900B2 (enExample)
JP (1) JP7482684B2 (enExample)
KR (1) KR102920322B1 (enExample)
CN (1) CN113707551A (enExample)
TW (1) TWI886273B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12119209B2 (en) * 2021-10-11 2024-10-15 Applied Materials, Inc. Dynamic processing chamber baffle

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263405A (ja) * 1994-03-18 1995-10-13 Oki Electric Ind Co Ltd ドライエッチングの方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
JP2007266056A (ja) * 2006-03-27 2007-10-11 Tokyo Electron Ltd プラズマエッチング方法
CN105390387A (zh) * 2014-08-29 2016-03-09 东京毅力科创株式会社 蚀刻方法
CN106057666A (zh) * 2015-04-06 2016-10-26 东京毅力科创株式会社 蚀刻方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4783169B2 (ja) 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
JP4764241B2 (ja) 2006-04-17 2011-08-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
US7682979B2 (en) 2006-06-29 2010-03-23 Lam Research Corporation Phase change alloy etch
KR100854926B1 (ko) * 2007-06-25 2008-08-27 주식회사 동부하이텍 반도체 소자용 마스크
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10862031B2 (en) * 2019-03-01 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method to effectively suppress heat dissipation in PCRAM devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263405A (ja) * 1994-03-18 1995-10-13 Oki Electric Ind Co Ltd ドライエッチングの方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
JP2007266056A (ja) * 2006-03-27 2007-10-11 Tokyo Electron Ltd プラズマエッチング方法
CN105390387A (zh) * 2014-08-29 2016-03-09 东京毅力科创株式会社 蚀刻方法
CN106057666A (zh) * 2015-04-06 2016-10-26 东京毅力科创株式会社 蚀刻方法

Also Published As

Publication number Publication date
KR20210144577A (ko) 2021-11-30
KR102920322B1 (ko) 2026-01-30
US20210366724A1 (en) 2021-11-25
JP7482684B2 (ja) 2024-05-14
US11842900B2 (en) 2023-12-12
JP2021184410A (ja) 2021-12-02
TW202209488A (zh) 2022-03-01
TWI886273B (zh) 2025-06-11

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