KR102920322B1 - 에칭 방법 및 플라즈마 처리 장치 - Google Patents

에칭 방법 및 플라즈마 처리 장치

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Publication number
KR102920322B1
KR102920322B1 KR1020210059911A KR20210059911A KR102920322B1 KR 102920322 B1 KR102920322 B1 KR 102920322B1 KR 1020210059911 A KR1020210059911 A KR 1020210059911A KR 20210059911 A KR20210059911 A KR 20210059911A KR 102920322 B1 KR102920322 B1 KR 102920322B1
Authority
KR
South Korea
Prior art keywords
gas
plasma
titanium nitride
nitride film
processing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210059911A
Other languages
English (en)
Korean (ko)
Other versions
KR20210144577A (ko
Inventor
류이치 아사코
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20210144577A publication Critical patent/KR20210144577A/ko
Application granted granted Critical
Publication of KR102920322B1 publication Critical patent/KR102920322B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020210059911A 2020-05-21 2021-05-10 에칭 방법 및 플라즈마 처리 장치 Active KR102920322B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020088724A JP7482684B2 (ja) 2020-05-21 2020-05-21 エッチング方法及びプラズマ処理装置
JPJP-P-2020-088724 2020-05-21

Publications (2)

Publication Number Publication Date
KR20210144577A KR20210144577A (ko) 2021-11-30
KR102920322B1 true KR102920322B1 (ko) 2026-01-30

Family

ID=78608340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210059911A Active KR102920322B1 (ko) 2020-05-21 2021-05-10 에칭 방법 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US11842900B2 (enExample)
JP (1) JP7482684B2 (enExample)
KR (1) KR102920322B1 (enExample)
CN (1) CN113707551A (enExample)
TW (1) TWI886273B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12119209B2 (en) * 2021-10-11 2024-10-15 Applied Materials, Inc. Dynamic processing chamber baffle

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531404B1 (en) 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US20070187362A1 (en) 2006-02-13 2007-08-16 Hideo Nakagawa Dry etching method, fine structure formation method, mold and mold fabrication method
US20090130855A1 (en) 2006-06-29 2009-05-21 Lam Research Corporation Phase change alloy etch
US20190311909A1 (en) 2018-04-06 2019-10-10 Applied Materials, Inc. Gas-phase selective etching systems and methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263405A (ja) * 1994-03-18 1995-10-13 Oki Electric Ind Co Ltd ドライエッチングの方法
JP4754380B2 (ja) * 2006-03-27 2011-08-24 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム、記憶媒体及びプラズマ処理装置
JP4764241B2 (ja) 2006-04-17 2011-08-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
KR100854926B1 (ko) * 2007-06-25 2008-08-27 주식회사 동부하이텍 반도체 소자용 마스크
JP6328524B2 (ja) * 2014-08-29 2018-05-23 東京エレクトロン株式会社 エッチング方法
JP6339963B2 (ja) * 2015-04-06 2018-06-06 東京エレクトロン株式会社 エッチング方法
US10862031B2 (en) * 2019-03-01 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method to effectively suppress heat dissipation in PCRAM devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531404B1 (en) 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US20070187362A1 (en) 2006-02-13 2007-08-16 Hideo Nakagawa Dry etching method, fine structure formation method, mold and mold fabrication method
US20090130855A1 (en) 2006-06-29 2009-05-21 Lam Research Corporation Phase change alloy etch
US20190311909A1 (en) 2018-04-06 2019-10-10 Applied Materials, Inc. Gas-phase selective etching systems and methods

Also Published As

Publication number Publication date
KR20210144577A (ko) 2021-11-30
US20210366724A1 (en) 2021-11-25
JP7482684B2 (ja) 2024-05-14
US11842900B2 (en) 2023-12-12
JP2021184410A (ja) 2021-12-02
TW202209488A (zh) 2022-03-01
TWI886273B (zh) 2025-06-11
CN113707551A (zh) 2021-11-26

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