JP7482684B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

Info

Publication number
JP7482684B2
JP7482684B2 JP2020088724A JP2020088724A JP7482684B2 JP 7482684 B2 JP7482684 B2 JP 7482684B2 JP 2020088724 A JP2020088724 A JP 2020088724A JP 2020088724 A JP2020088724 A JP 2020088724A JP 7482684 B2 JP7482684 B2 JP 7482684B2
Authority
JP
Japan
Prior art keywords
gas
plasma
process gas
titanium nitride
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020088724A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021184410A (ja
JP2021184410A5 (enExample
Inventor
竜一 浅子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020088724A priority Critical patent/JP7482684B2/ja
Priority to KR1020210059911A priority patent/KR102920322B1/ko
Priority to CN202110504734.3A priority patent/CN113707551A/zh
Priority to TW110116867A priority patent/TWI886273B/zh
Priority to US17/318,446 priority patent/US11842900B2/en
Publication of JP2021184410A publication Critical patent/JP2021184410A/ja
Publication of JP2021184410A5 publication Critical patent/JP2021184410A5/ja
Application granted granted Critical
Publication of JP7482684B2 publication Critical patent/JP7482684B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2020088724A 2020-05-21 2020-05-21 エッチング方法及びプラズマ処理装置 Active JP7482684B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020088724A JP7482684B2 (ja) 2020-05-21 2020-05-21 エッチング方法及びプラズマ処理装置
KR1020210059911A KR102920322B1 (ko) 2020-05-21 2021-05-10 에칭 방법 및 플라즈마 처리 장치
CN202110504734.3A CN113707551A (zh) 2020-05-21 2021-05-10 蚀刻方法及等离子体处理装置
TW110116867A TWI886273B (zh) 2020-05-21 2021-05-11 蝕刻方法及電漿處理裝置
US17/318,446 US11842900B2 (en) 2020-05-21 2021-05-12 Etching method and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020088724A JP7482684B2 (ja) 2020-05-21 2020-05-21 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2021184410A JP2021184410A (ja) 2021-12-02
JP2021184410A5 JP2021184410A5 (enExample) 2023-04-07
JP7482684B2 true JP7482684B2 (ja) 2024-05-14

Family

ID=78608340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020088724A Active JP7482684B2 (ja) 2020-05-21 2020-05-21 エッチング方法及びプラズマ処理装置

Country Status (5)

Country Link
US (1) US11842900B2 (enExample)
JP (1) JP7482684B2 (enExample)
KR (1) KR102920322B1 (enExample)
CN (1) CN113707551A (enExample)
TW (1) TWI886273B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12119209B2 (en) * 2021-10-11 2024-10-15 Applied Materials, Inc. Dynamic processing chamber baffle

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004519838A (ja) 2000-08-04 2004-07-02 アプライド マテリアルズ インコーポレイテッド 窒化チタンをエッチングする方法
JP2007287902A (ja) 2006-04-17 2007-11-01 Hitachi High-Technologies Corp ドライエッチング方法
JP2009543351A (ja) 2006-06-29 2009-12-03 ラム リサーチ コーポレーション 相変化合金のエッチング

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263405A (ja) * 1994-03-18 1995-10-13 Oki Electric Ind Co Ltd ドライエッチングの方法
JP4783169B2 (ja) 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
JP4754380B2 (ja) * 2006-03-27 2011-08-24 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム、記憶媒体及びプラズマ処理装置
KR100854926B1 (ko) * 2007-06-25 2008-08-27 주식회사 동부하이텍 반도체 소자용 마스크
JP6328524B2 (ja) * 2014-08-29 2018-05-23 東京エレクトロン株式会社 エッチング方法
JP6339963B2 (ja) * 2015-04-06 2018-06-06 東京エレクトロン株式会社 エッチング方法
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10862031B2 (en) * 2019-03-01 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method to effectively suppress heat dissipation in PCRAM devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004519838A (ja) 2000-08-04 2004-07-02 アプライド マテリアルズ インコーポレイテッド 窒化チタンをエッチングする方法
JP2007287902A (ja) 2006-04-17 2007-11-01 Hitachi High-Technologies Corp ドライエッチング方法
JP2009543351A (ja) 2006-06-29 2009-12-03 ラム リサーチ コーポレーション 相変化合金のエッチング

Also Published As

Publication number Publication date
KR20210144577A (ko) 2021-11-30
KR102920322B1 (ko) 2026-01-30
US20210366724A1 (en) 2021-11-25
US11842900B2 (en) 2023-12-12
JP2021184410A (ja) 2021-12-02
TW202209488A (zh) 2022-03-01
TWI886273B (zh) 2025-06-11
CN113707551A (zh) 2021-11-26

Similar Documents

Publication Publication Date Title
CN110544628B (zh) 对膜进行蚀刻的方法和等离子体处理装置
CN102097353B (zh) 保护在适于在等离子体处理系统中使用的基片支撑件中的粘结层的方法
JP6339963B2 (ja) エッチング方法
US20180158684A1 (en) Method of processing target object
JP2019046994A (ja) エッチング方法
JP2016154234A (ja) サブ１０ｎｍパターニングを実現するための材料プロセシング
JP6937644B2 (ja) プラズマ処理装置及びプラズマ処理方法
TWI757483B (zh) 蝕刻方法
US20240290625A1 (en) Plasma processing apparatus
JP2019186501A (ja) エッチングする方法及びプラズマ処理装置
CN112530799A (zh) 蚀刻氧化硅膜的方法及等离子体处理装置
TWI822731B (zh) 蝕刻方法及電漿處理裝置
JP6877316B2 (ja) エッチング方法
JP6928548B2 (ja) エッチング方法
TWI886273B (zh) 蝕刻方法及電漿處理裝置
TW202129753A (zh) 基板處理方法、半導體元件之製造方法及電漿處理裝置
JP6374781B2 (ja) プラズマ処理方法
TWI759348B (zh) 被處理體之處理方法
JP7627645B2 (ja) プラズマ処理方法及びプラズマ処理装置
US7488689B2 (en) Plasma etching method
JP7577546B2 (ja) 基板処理方法及びプラズマ処理装置
TW202601737A (zh) 基板邊緣輪廓處理

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230330

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230330

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231221

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20231221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240209

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240430

R150 Certificate of patent or registration of utility model

Ref document number: 7482684

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150