JP2021141337A5 - - Google Patents
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- JP2021141337A5 JP2021141337A5 JP2021095082A JP2021095082A JP2021141337A5 JP 2021141337 A5 JP2021141337 A5 JP 2021141337A5 JP 2021095082 A JP2021095082 A JP 2021095082A JP 2021095082 A JP2021095082 A JP 2021095082A JP 2021141337 A5 JP2021141337 A5 JP 2021141337A5
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- JP
- Japan
- Prior art keywords
- layer
- laminate according
- metal oxide
- oxide semiconductor
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 12
- 229910044991 metal oxide Inorganic materials 0.000 claims 8
- 150000004706 metal oxides Chemical class 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052702 rhenium Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015254555 | 2015-12-25 | ||
| JP2015254555 | 2015-12-25 | ||
| JP2016159352 | 2016-08-15 | ||
| JP2016159352 | 2016-08-15 | ||
| JP2017558338A JP6976858B2 (ja) | 2015-12-25 | 2016-12-26 | 積層体 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017558338A Division JP6976858B2 (ja) | 2015-12-25 | 2016-12-26 | 積層体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021141337A JP2021141337A (ja) | 2021-09-16 |
| JP2021141337A5 true JP2021141337A5 (https=) | 2021-10-28 |
Family
ID=59090563
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017558338A Active JP6976858B2 (ja) | 2015-12-25 | 2016-12-26 | 積層体 |
| JP2021095082A Withdrawn JP2021141337A (ja) | 2015-12-25 | 2021-06-07 | 積層体 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017558338A Active JP6976858B2 (ja) | 2015-12-25 | 2016-12-26 | 積層体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11189737B2 (https=) |
| JP (2) | JP6976858B2 (https=) |
| KR (1) | KR102382656B1 (https=) |
| CN (1) | CN108475702B (https=) |
| TW (1) | TWI795349B (https=) |
| WO (1) | WO2017111174A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111052395A (zh) | 2017-08-31 | 2020-04-21 | 美光科技公司 | 半导体装置、晶体管以及用于接触金属氧化物半导体装置的相关方法 |
| KR102396806B1 (ko) | 2017-08-31 | 2022-05-12 | 마이크론 테크놀로지, 인크 | 반도체 장치, 하이브리드 트랜지스터 및 관련 방법 |
| JP6802818B2 (ja) * | 2018-03-06 | 2020-12-23 | 株式会社東芝 | 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法 |
| CN118922006A (zh) | 2018-07-17 | 2024-11-08 | 索尼半导体解决方案公司 | 摄像元件、层叠型摄像元件和固态摄像装置 |
| JP7093329B2 (ja) * | 2019-09-02 | 2022-06-29 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
| CN110634959B (zh) * | 2019-09-20 | 2021-01-08 | 山东大学 | 一种基于igzo肖特基二极管动态调控超材料的方法 |
| CN110890280B (zh) * | 2019-11-27 | 2024-02-06 | 山东大学 | 一种利用钯/钯氧化物双层肖特基电极制备氧化物半导体肖特基二极管的方法 |
| CN111129166B (zh) * | 2019-12-13 | 2023-02-07 | 合肥中科微电子创新中心有限公司 | 氧化镓基半导体结构及其制备方法 |
| CN111081788B (zh) * | 2019-12-31 | 2021-06-29 | 山东大学 | 一种底部为肖特基接触的铟铝锌氧化物二极管及其制备方法 |
| CN111081765B (zh) * | 2019-12-31 | 2021-06-29 | 山东大学 | 一种基于铟铝锌氧化物的肖特基二极管及其制备方法 |
| JP7807627B2 (ja) * | 2020-02-07 | 2026-01-28 | 株式会社Flosfia | 半導体素子および半導体装置 |
| CN115053354A (zh) * | 2020-02-07 | 2022-09-13 | 株式会社Flosfia | 半导体元件和半导体装置 |
| JP7500293B2 (ja) * | 2020-06-12 | 2024-06-17 | パナソニックホールディングス株式会社 | Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法 |
| CN117178375A (zh) * | 2021-03-30 | 2023-12-05 | 出光兴产株式会社 | 光电转换元件和光电转换元件的制造方法 |
| KR20240041395A (ko) * | 2022-09-22 | 2024-04-01 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| JPWO2024162270A1 (https=) * | 2023-01-31 | 2024-08-08 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136878A (en) * | 1974-09-14 | 1976-03-27 | Tokyo Shibaura Electric Co | Handotaisochi no seizohoho |
| US5027166A (en) * | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
| KR100348269B1 (ko) * | 2000-03-22 | 2002-08-09 | 엘지전자 주식회사 | 루데니움 산화물을 이용한 쇼트키 콘택 방법 |
| KR101796909B1 (ko) | 2009-10-30 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 비선형 소자, 표시 장치, 및 전자 기기 |
| TWI446626B (zh) * | 2010-05-05 | 2014-07-21 | Yageo Corp | 寬頻行動通訊天線 |
| CN102959756A (zh) * | 2010-06-24 | 2013-03-06 | 默克专利股份有限公司 | 改性有机电子器件中的电极的方法 |
| JP5449094B2 (ja) * | 2010-09-07 | 2014-03-19 | 株式会社東芝 | 半導体装置 |
| JP2013102081A (ja) | 2011-11-09 | 2013-05-23 | Tamura Seisakusho Co Ltd | ショットキーバリアダイオード |
| US9570631B2 (en) | 2013-08-19 | 2017-02-14 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor substrate and schottky barrier diode |
| WO2015025499A1 (ja) | 2013-08-19 | 2015-02-26 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
| JP2015109315A (ja) * | 2013-12-03 | 2015-06-11 | 出光興産株式会社 | 薄膜トランジスタ、その製造方法、酸化物半導体層、表示装置及び半導体装置 |
| JP6135487B2 (ja) * | 2013-12-09 | 2017-05-31 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6149786B2 (ja) * | 2014-04-11 | 2017-06-21 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
| EP2942804B1 (en) | 2014-05-08 | 2017-07-12 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
| TWI726964B (zh) * | 2015-12-25 | 2021-05-11 | 日商出光興產股份有限公司 | 積層體 |
| US10546960B2 (en) * | 2016-02-05 | 2020-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide film, semiconductor device, and manufacturing method of semiconductor device |
| US10804362B2 (en) * | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
| JP6761872B2 (ja) * | 2017-01-05 | 2020-09-30 | パナソニック株式会社 | 半導体リレー |
| TWI762467B (zh) * | 2017-02-22 | 2022-05-01 | 晶元光電股份有限公司 | 氮化物半導體磊晶疊層結構及其功率元件 |
-
2016
- 2016-12-26 JP JP2017558338A patent/JP6976858B2/ja active Active
- 2016-12-26 US US16/065,239 patent/US11189737B2/en active Active
- 2016-12-26 KR KR1020187016344A patent/KR102382656B1/ko active Active
- 2016-12-26 TW TW105143250A patent/TWI795349B/zh active
- 2016-12-26 CN CN201680075286.7A patent/CN108475702B/zh active Active
- 2016-12-26 WO PCT/JP2016/088765 patent/WO2017111174A1/ja not_active Ceased
-
2021
- 2021-06-07 JP JP2021095082A patent/JP2021141337A/ja not_active Withdrawn
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