JPWO2024162270A1 - - Google Patents
Info
- Publication number
- JPWO2024162270A1 JPWO2024162270A1 JP2024574894A JP2024574894A JPWO2024162270A1 JP WO2024162270 A1 JPWO2024162270 A1 JP WO2024162270A1 JP 2024574894 A JP2024574894 A JP 2024574894A JP 2024574894 A JP2024574894 A JP 2024574894A JP WO2024162270 A1 JPWO2024162270 A1 JP WO2024162270A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/48—Insulating materials thereof
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023013629 | 2023-01-31 | ||
| PCT/JP2024/002688 WO2024162270A1 (ja) | 2023-01-31 | 2024-01-29 | ダイオード、これを用いた整流回路、及び受電レクテナ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024162270A1 true JPWO2024162270A1 (https=) | 2024-08-08 |
Family
ID=92147651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024574894A Pending JPWO2024162270A1 (https=) | 2023-01-31 | 2024-01-29 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024162270A1 (https=) |
| CN (1) | CN120570083A (https=) |
| WO (1) | WO2024162270A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5678341B2 (ja) * | 2013-08-23 | 2015-03-04 | 株式会社レーザーシステム | ショットキーバリアダイオード、ショットキーバリアダイオードの製造方法、電力伝送システムおよび電源線用無線接続コネクタ |
| KR102382656B1 (ko) * | 2015-12-25 | 2022-04-04 | 이데미쓰 고산 가부시키가이샤 | 적층체 |
| JP6304520B1 (ja) * | 2017-07-27 | 2018-04-04 | 株式会社レーザーシステム | 半導体装置 |
| JP6656698B1 (ja) * | 2019-05-23 | 2020-03-04 | 国立大学法人徳島大学 | 医療用マイクロ波給電システム、医療用受電回路、ショットキーバリアダイオード及び医療用マイクロ波給電方法 |
-
2024
- 2024-01-29 CN CN202480009524.9A patent/CN120570083A/zh active Pending
- 2024-01-29 WO PCT/JP2024/002688 patent/WO2024162270A1/ja not_active Ceased
- 2024-01-29 JP JP2024574894A patent/JPWO2024162270A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN120570083A (zh) | 2025-08-29 |
| WO2024162270A1 (ja) | 2024-08-08 |