JP2021093453A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2021093453A JP2021093453A JP2019223280A JP2019223280A JP2021093453A JP 2021093453 A JP2021093453 A JP 2021093453A JP 2019223280 A JP2019223280 A JP 2019223280A JP 2019223280 A JP2019223280 A JP 2019223280A JP 2021093453 A JP2021093453 A JP 2021093453A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 194
- 239000010410 layer Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000012535 impurity Substances 0.000 claims description 29
- 239000002344 surface layer Substances 0.000 claims description 6
- 230000001174 ascending effect Effects 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 abstract description 20
- 230000003247 decreasing effect Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 126
- 229910010271 silicon carbide Inorganic materials 0.000 description 124
- 230000001681 protective effect Effects 0.000 description 15
- 239000010936 titanium Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- 229910000838 Al alloy Inorganic materials 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000036413 temperature sense Effects 0.000 description 1
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Abstract
Description
実施の形態にかかる半導体装置は、シリコン(Si)よりもバンドギャップが広い半導体(ワイドバンドギャップ半導体とする)を用いて構成される。この実施の形態にかかる半導体装置の構造について、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いた場合を例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す図4のA−A'断面図である。図2は、実施の形態にかかる炭化珪素半導体装置の構造を示す図4のB−B'断面図である。図3は、実施の形態にかかる炭化珪素半導体装置の構造を示す図4のC−C'断面図である。
次に、実施の形態にかかる炭化珪素半導体装置の製造方法について説明する。図6〜図11は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。
2、102 n型炭化珪素エピタキシャル層
2a 第1n型炭化珪素エピタキシャル層
2b 第2n型炭化珪素エピタキシャル層
3、103 p型炭化珪素エピタキシャル層
4、104 第1p+型ベース領域
4a 下部第1p+型ベース領域
4b 上部第1p+型ベース領域
5、105 第2p+型ベース領域
6、106 n型高濃度領域
6a 下部n型高濃度領域
6b 上部n型高濃度領域
7、107 n+型ソース領域
8、108 p++型コンタクト領域
9、109 ゲート絶縁膜
10、110 ゲート電極
11、111 層間絶縁膜
13、113 ソース電極
14、114 裏面電極
15、115 ソース電極パッド
16、116 めっき膜
17、117 はんだ
18、118 トレンチ
19、119 外部電極ピン
21、121 第1保護膜
23、123 第2保護膜
25、125 第1TiN膜
26、126 第1Ti膜
27、127 第2TiN膜
28、128 第2Ti膜
29、129 Al合金膜
31 高抵抗領域
32 中抵抗領域
33 低抵抗領域
40 コンタクトホール
50、150 トレンチ型MOSFET
Claims (5)
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板より低不純物濃度の第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に選択的に設けられた第2導電型の第2半導体層と、
前記第2半導体層の、前記半導体基板側に対して反対側の表面層に選択的に設けられた第1導電型の第1半導体領域と、
前記第2半導体層の、前記半導体基板側に対して反対側の表面層に選択的に設けられた前記第1半導体領域と接する第2導電型の第2半導体領域と、
前記第1半導体領域および前記第2半導体層を貫通し、前記第1半導体層に達するストライプ形状のトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第1半導体領域および前記第2半導体領域の表面に設けられた第1電極と、
前記半導体基板の裏面に設けられた第2電極と、
を備え、
前記第1半導体領域は、隣り合う前記トレンチに接する前記第1半導体領域を接続する構造であって、前記トレンチがストライプ状に延びる方向に周期的に並んだ前記構造を含み、
前記第1電極は、前記第1半導体領域の前記構造で前記第1半導体領域と接し、
隣り合う2つの前記構造の間に、抵抗値が異なる領域が、前記トレンチがストライプ状に延びる方向に沿って、抵抗値が低くなる順または高くなる順に配置されていることを特徴とする半導体装置。 - 隣り合う2つの前記構造の間において、前記トレンチがストライプ状に延びる方向に沿って、前記第1半導体領域の、前記トレンチがストライプ状に延びる方向と垂直方向の幅が階段的に変化することを特徴とする請求項1に記載の半導体装置。
- 隣り合う2つの前記構造の間に、高抵抗領域、中抵抗領域および低抵抗領域の3つの領域がこの順序で配置されていることを特徴とする請求項1に記載の半導体装置。
- 隣り合う2つの前記構造の間に、前記第2半導体領域が平面視で、隣り合う2つの前記構造の中間を対角線とした菱形に設けられていることを特徴とする請求項1に記載の半導体装置。
- 前記抵抗値が異なる領域が、前記トレンチがストライプ状に延びる方向に周期的に並んでいることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
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