JP2021068893A - 基板処理装置及び方法 - Google Patents
基板処理装置及び方法 Download PDFInfo
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- JP2021068893A JP2021068893A JP2020172809A JP2020172809A JP2021068893A JP 2021068893 A JP2021068893 A JP 2021068893A JP 2020172809 A JP2020172809 A JP 2020172809A JP 2020172809 A JP2020172809 A JP 2020172809A JP 2021068893 A JP2021068893 A JP 2021068893A
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- 238000000034 method Methods 0.000 title claims abstract description 38
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 72
- 238000012546 transfer Methods 0.000 description 28
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Abstract
Description
1660 第2供給ユニット
1670 第1供給ユニット
Claims (20)
- 基板を処理する装置において、
内部に処理空間を有する工程チャンバーと、
前記処理空間で基板を支持する支持ユニットと、
前記支持ユニットに提供されて前記基板を加熱する加熱ユニットと、
前記処理空間を排気する排気ユニットと、
前記処理空間に気体を供給する気体供給ユニットと、を含み、
前記気体供給ユニットは、
前記気体を第1温度と第2温度の中で選択された温度に供給するように提供される基板処理装置。 - 前記第1温度の気体を前記処理空間に供給するように提供される第1供給ユニットと、
前記第1温度より高い第2温度の前記気体を前記処理空間に供給するように提供される第2供給ユニットと、を有する請求項1に記載の基板処理装置。 - 前記第2供給ユニットは、
前記支持ユニットの上部に配置されるバッファ空間と、
前記バッファ空間から気体が伝達される吐出空間と、
前記バッファ空間と前記吐出空間との間に提供されるヒーターと、
前記バッファ空間に気体を吐出する第2供給管と、を含む請求項2に記載の基板処理装置。 - 前記第1供給ユニットは、
前記処理空間に直接気体を吐出する第1供給管を含む請求項2に記載の基板処理装置。 - 前記第1供給ユニットは、
前記バッファ空間と前記吐出空間を貫通するように提供される請求項3に記載の基板処理装置。 - 前記第2供給ユニットは、
前記第2供給ユニットの内部空間をバッファ空間と吐出空間に区画し、第1ホールが形成された区画プレートと、
前記吐出空間内の気体を前記処理空間に吐出する第2ホールが形成された吐出プレートと、をさらに含み、
前記区画プレートは、前記基板の中央領域に対向されるように提供され、前記吐出プレートは、前記基板の全体領域に対向されるように提供される請求項3に記載の基板処理装置。 - 前記第1供給ユニットと前記第2供給ユニットの吐出口は、前記基板の中央領域に対向されるように提供される請求項2に記載の基板処理装置。
- 前記気体供給ユニットは、
前記基板上に形成された液膜の厚さを測定する測定装置と、
前記測定装置によって測定された前記基板の上の液膜の厚さ情報を受信し、前記気体供給ユニットを制御する制御器と、をさらに含む請求項1に記載の基板処理装置。 - 前記制御器は、
前記測定装置によって測定された前記基板上に形成された液膜の厚さ情報に基づいて、
前記基板の中央領域に形成された液膜の厚さが既設定値以上である場合、第2温度の前記気体を供給し、
前記基板の中央領域に形成された液膜の厚さが既設定値未満である場合、前記第1温度の前記気体を供給し、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給されるように前記気体供給ユニットを制御する請求項8に記載の基板処理装置。 - 前記制御器は、
前記測定装置によって測定された前記基板上に形成された液膜の厚さ情報に基づいて、
前記基板の中央領域に形成された液膜の厚さが既設定値以上である場合、前記第2温度の前記気体を供給し、
前記基板の中央領域に形成された液膜の厚さが厚いほど、前記気体の流量を増加させ、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給されるように前記気体供給ユニットを制御する請求項8に記載の基板処理装置。 - 前記制御器は、
前記測定装置によって測定された前記基板上に形成された液膜の厚さ情報に基づいて、
前記基板の中央領域に形成された液膜の厚さが既設定値未満である場合、前記第1温度の前記気体を供給し、
前記基板の中央領域に形成された液膜の厚さが薄いほど、前記気体の流量を増加させ、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給されるように前記気体供給ユニットを制御する請求項8に記載の基板処理装置。 - 請求項2の基板処理装置を利用して基板を処理する方法において、
前記基板の中央領域に形成された液膜の厚さが既設定された厚さがされるように前記処理空間に供給される気体の温度又は流量を制御する基板処理方法。 - 前記第2供給ユニットは、
前記支持ユニットの上部に配置されるバッファ空間と、
前記バッファ空間から気体が伝達される吐出空間と、
前記バッファ空間と前記吐出空間との間に提供されるヒーターと、
前記バッファ空間に気体を吐出する第2供給管と、を含む請求項12に記載の基板処理方法。 - 前記第1供給ユニットは、前記処理空間に直接気体を吐出する第1供給管を含む請求項12に記載の基板処理方法。
- 前記第1温度の気体は、前記基板の中央領域に対向される処理空間に供給される請求項12に記載の基板処理方法。
- 前記基板の中央領域に形成された液膜の厚さが既設定値以上である場合、第2温度の前記気体を供給し、
前記基板の中央領域に形成された液膜の厚さが既設定値未満である場合、前記第1温度の前記気体を供給し、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給される請求項12に記載の基板処理方法。 - 前記基板の中央領域に形成された液膜の厚さが既設定値以上である場合、前記第2温度の前記気体を供給し、
前記基板の中央領域に形成された液膜の厚さが厚いほど、前記気体の流量を増加させ、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給される請求項12に記載の基板処理方法。 - 前記基板の中央領域に形成された液膜の厚さが既設定値未満である場合、前記第1温度の前記気体を供給し、
前記基板の中央領域に形成された液膜の厚さが薄いほど、前記気体の流量を増加させ、
前記気体は前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給される請求項12に記載の基板処理方法。 - 処理空間内でフォトレジストの液膜が塗布された基板を加熱して前記液膜でソルベントを蒸発させる熱処理工程を遂行し、前記熱処理工程は前記処理空間に気体を供給した状態でヒーターで前記基板を加熱し、前記基板を熱処理する間に前記処理空間に供給される前記気体の温度又は流量が変更される基板処理方法。
- 前記基板の中央領域に形成された液膜の厚さが既設定値以上である場合、前記処理空間に供給される前記気体の温度を高め、
前記基板の中央領域に形成された液膜の厚さが既設定値未満である場合、前記処理空間に供給される前記気体の温度を下げ、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給され、
前記基板の中央領域に形成された液膜の厚さが既設定値から多く逸脱するほど、前記処理空間に供給される前記気体の流量を増加させ、
前記気体は、前記基板の中央領域に形成された液膜の厚さが既設定値に到達する時まで継続的に供給される請求項19に記載の基板処理方法。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153749A (ja) * | 1993-11-30 | 1995-06-16 | Oki Electric Ind Co Ltd | 処理ウエハの温度制御装置及びその温度制御方法 |
JPH10284382A (ja) * | 1997-04-07 | 1998-10-23 | Komatsu Ltd | 温度制御装置 |
JPH11329927A (ja) * | 1998-05-11 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | 基板冷却方法および基板冷却装置 |
JP2000058430A (ja) * | 1998-08-17 | 2000-02-25 | Seiko Epson Corp | 半導体製造装置 |
JP2002184682A (ja) * | 2000-12-19 | 2002-06-28 | Tokyo Electron Ltd | 熱処理装置及びその方法、並びにパターン形成方法 |
JP2003158054A (ja) * | 2001-08-28 | 2003-05-30 | Nec Kagoshima Ltd | 基板処理装置 |
JP2003257848A (ja) * | 2002-03-04 | 2003-09-12 | Tokyo Electron Ltd | 基板加熱方法、基板加熱装置及び塗布、現像装置 |
JP2006183934A (ja) * | 2004-12-27 | 2006-07-13 | Seiko Epson Corp | 溶媒除去装置および溶媒除去方法 |
JP2008172111A (ja) * | 2007-01-15 | 2008-07-24 | Tokyo Electron Ltd | リフロー処理装置およびリフロー処理方法 |
JP2008218593A (ja) * | 2007-03-02 | 2008-09-18 | Tokyo Electron Ltd | 基板処理装置 |
JP2011124342A (ja) * | 2009-12-09 | 2011-06-23 | Tokyo Electron Ltd | 基板処理装置、基板処理方法及びこの基板処理方法を実行させるためのプログラムを記録した記録媒体 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05166712A (ja) * | 1991-12-18 | 1993-07-02 | Dainippon Screen Mfg Co Ltd | 回転塗布方法 |
KR20060019300A (ko) | 2004-08-27 | 2006-03-03 | 삼성전자주식회사 | 감광막 두께 측정 장치 및 이를 이용한 감광막 두께 측정방법 |
JP4509820B2 (ja) * | 2005-02-15 | 2010-07-21 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法,熱処理板の温度設定装置,プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体 |
KR100724188B1 (ko) | 2005-12-28 | 2007-05-31 | 동부일렉트로닉스 주식회사 | 반도체 스피너 설비 |
JP4767138B2 (ja) | 2006-09-13 | 2011-09-07 | 大日本スクリーン製造株式会社 | 基板処理装置、液膜凍結方法および基板処理方法 |
KR20090011067A (ko) | 2007-07-25 | 2009-02-02 | 주식회사 동부하이텍 | Sog 공정의 베이크 유닛 챔버 시스템 |
JP5303954B2 (ja) * | 2008-02-15 | 2013-10-02 | 東京エレクトロン株式会社 | 疎水化処理方法、疎水化処理装置、塗布、現像装置及び記憶媒体 |
JP5067432B2 (ja) * | 2010-02-15 | 2012-11-07 | 東京エレクトロン株式会社 | 塗布、現像装置、現像方法及び記憶媒体 |
KR101497288B1 (ko) | 2012-03-06 | 2015-02-27 | 도쿄엘렉트론가부시키가이샤 | 액처리 방법, 액처리 장치 및 기억 매체 |
KR102000026B1 (ko) | 2012-08-29 | 2019-07-17 | 세메스 주식회사 | 기판처리장치 및 방법 |
JP6123688B2 (ja) | 2014-01-29 | 2017-05-10 | 東京エレクトロン株式会社 | 成膜装置 |
KR102308587B1 (ko) | 2014-03-19 | 2021-10-01 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
KR20150114049A (ko) * | 2014-03-31 | 2015-10-12 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP6212066B2 (ja) * | 2015-03-03 | 2017-10-11 | 東京エレクトロン株式会社 | 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 |
JP6072845B2 (ja) | 2015-03-31 | 2017-02-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
KR20160134926A (ko) * | 2015-05-13 | 2016-11-24 | 세메스 주식회사 | 액 도포 방법 및 기판 처리 장치 |
JP6738235B2 (ja) | 2016-08-09 | 2020-08-12 | 芝浦メカトロニクス株式会社 | 基板処理装置、および基板処理方法 |
KR101958636B1 (ko) | 2016-10-31 | 2019-03-18 | 세메스 주식회사 | 기판 지지 장치 및 이를 가지는 기판 처리 설비, 그리고 기판 처리 방법 |
JP2018093148A (ja) * | 2016-12-07 | 2018-06-14 | 東京エレクトロン株式会社 | 給排気構造 |
KR101884851B1 (ko) | 2016-12-16 | 2018-08-02 | 세메스 주식회사 | 기판 처리 장치 및 노즐의 온도 제어 방법 |
KR20180118316A (ko) | 2017-04-21 | 2018-10-31 | 세메스 주식회사 | 포토레지스트를 균일하게 도포하는 방법 및 이에 사용되는 장치 |
CN108075107B (zh) | 2017-12-07 | 2020-05-12 | 天齐锂业股份有限公司 | 熔融沉积制备锂带的方法 |
JP6839672B2 (ja) * | 2018-02-06 | 2021-03-10 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
CN108981592B (zh) | 2018-06-25 | 2021-08-17 | 浙江大学 | 基于激光干涉和衰减的接触熔化中微液膜厚度与温度测量装置及方法 |
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- 2021-06-28 KR KR1020210084300A patent/KR102347974B1/ko active IP Right Grant
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153749A (ja) * | 1993-11-30 | 1995-06-16 | Oki Electric Ind Co Ltd | 処理ウエハの温度制御装置及びその温度制御方法 |
JPH10284382A (ja) * | 1997-04-07 | 1998-10-23 | Komatsu Ltd | 温度制御装置 |
JPH11329927A (ja) * | 1998-05-11 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | 基板冷却方法および基板冷却装置 |
JP2000058430A (ja) * | 1998-08-17 | 2000-02-25 | Seiko Epson Corp | 半導体製造装置 |
JP2002184682A (ja) * | 2000-12-19 | 2002-06-28 | Tokyo Electron Ltd | 熱処理装置及びその方法、並びにパターン形成方法 |
JP2003158054A (ja) * | 2001-08-28 | 2003-05-30 | Nec Kagoshima Ltd | 基板処理装置 |
JP2003257848A (ja) * | 2002-03-04 | 2003-09-12 | Tokyo Electron Ltd | 基板加熱方法、基板加熱装置及び塗布、現像装置 |
JP2006183934A (ja) * | 2004-12-27 | 2006-07-13 | Seiko Epson Corp | 溶媒除去装置および溶媒除去方法 |
JP2008172111A (ja) * | 2007-01-15 | 2008-07-24 | Tokyo Electron Ltd | リフロー処理装置およびリフロー処理方法 |
JP2008218593A (ja) * | 2007-03-02 | 2008-09-18 | Tokyo Electron Ltd | 基板処理装置 |
JP2011124342A (ja) * | 2009-12-09 | 2011-06-23 | Tokyo Electron Ltd | 基板処理装置、基板処理方法及びこの基板処理方法を実行させるためのプログラムを記録した記録媒体 |
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