JP2020518137A - 薄膜太陽電池用層構造を製造するための方法 - Google Patents
薄膜太陽電池用層構造を製造するための方法 Download PDFInfo
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Abstract
Description
〔参照符号のリスト〕
1 層構造
2 キャリア基板
3 背面電極層
4 測定層
5 背面電極層のない領域
6 分離ライン
7 光活性領域
8 エッジ領域
9 測定フィールド
〔図1と2に対しては、テキストはない〕
〔Fig.3(図3)〕
〔ほとんど英語と同じで、数字におけるコンマは、ピリオド/小数点に変更すべきである〕
At%=atomic percent(原子百分率)
ns laser(nsレーザー)=nanosecond laser(ナノ秒レーザー)
ps laser(psレーザー)=picosecond laser(ピコ秒レーザー)
Zeugenglas=Witness glass(ウィットネスガラス)
Typ=type(タイプ)
〔Fig.4(図4)〕
Eta(イータ)
Jsc=ISC
PIDI06 Entschichtung Status=PlDl06 Decoating Status(コーティング除去ステータス)
Ja=Yes(はい)
Nein=No(いいえ)
Circuit(回路)
Modul nach LS=Module after light irradiation(光照射後のモジュール)
FF=fill factor(フィルファクタ)
Voc/Cell [open circuit voltage/cell](〔開回路電圧/セル〕)
Claims (15)
- 薄膜太陽電池の製造のための層構造(1)を製造するための方法であって、
キャリア基板(2)を提供し、
前記キャリア基板(2)上に背面電極層(3)を堆積し、
少なくとも1つの背面電極層のない領域(5)を製造し、
測定層(4)を、前記測定層(4)が、前記少なくとも1つの背面電極層のない領域(5)の上方に少なくとも位置するように作成し、ここにおいて前記測定層(4)は、光活性吸収体層(4)または前記光活性吸収体層(4)の前駆体層であり、
前記背面電極層(3)の前記少なくとも1つの背面電極層のない領域(5)の上方に位置している前記測定層(4)の領域(9)において、前記測定層(4)の少なくとも1つの構成要素の量または相対的構成比を決定するステップを備えていることを特徴とする方法。 - 前記少なくとも1つの背面電極層のない領域(5)は、前記背面電極層(3)のコーティングを除去することにより製造されることを特徴とする請求項1に記載の方法。
- 前記少なくとも1つの背面電極層のない領域(5)は、湿式化学エッチングまたはレーザーアブレーションにより製造されることを特徴とする請求項2に記載の方法。
- 前記少なくとも1つの背面電極層のない領域(5)は、1から1,000、特には、1から500ピコ秒のパルス持続時間のパルスレーザービームによりコーティングが除去されることを特徴とする請求項3に記載の方法。
- 前記少なくとも1つの背面電極層のない領域(5)の最長寸法は、10mmの最大サイズ、特には、5mmの最大サイズを有することを特徴とする請求項1から4のいずれか1項に記載の方法。
- 複数の背面電極層のない領域(5)が製造されることを特徴とする請求項1から5のいずれか1項に記載の方法。
- 前記背面電極層のない領域(5)は、前記測定層(4)を堆積するために、前記キャリア基板(2)の搬送方向に沿って配置されていることを特徴とする請求項6に記載の方法。
- 前記背面電極層のない領域(5)は、前記測定層(4)を堆積するために、前記キャリア基板(2)の搬送方向を横切って配置されていることを特徴とする請求項6または7に記載の方法。
- 前記背面電極層のない領域(5)は、1つまたは互いに近接している複数の列において配置され、特には、均一に分散されていることを特徴とする請求項6から8のいずれか1項に記載の方法。
- 前記少なくとも1つの背面電極層のない領域(5)は、完全なコーティングの除去のために提供される前記キャリア基板(2)のエッジ領域(8)に配置されていることを特徴とする請求項1から9のいずれか1項に記載の方法。
- 前記少なくとも1つの背面電極層のない領域(5)は、光電エネルギー生成のために提供される前記キャリア基板(2)の領域(7)に配置されていることを特徴とする請求項1から10のいずれか1項に記載の方法。
- 少なくとも1つの同じ構成要素が、前記測定層(4)と前記背面電極層(3)に含まれていることを特徴とする請求項1から11のいずれか1項に記載の方法。
- 前記測定層(4)は黄銅鉱化合物半導体、特には、Cu2ZnSn(S,Se)4、Cu(In,Ga,Al)(S,Se)2、CuInSe2、CuInS2、Cu(In,Ga)Se2、およびCu(In,Ga)(S,Se)2、および/または、ケステライト化合物半導体(CZTS)、または前記黄銅鉱化合物半導体の前駆体層、および/または、前記ケステライト化合物半導体の前駆体層から選択される黄銅鉱化合物半導体を含み、前記背面電極層(3)は、Cuおよび/またはZnを含んでいることを特徴とする請求項1から12のいずれか1項に記載の方法。
- 前記測定層(4)の前記材料は熱的に変換され、前記測定層(4)の少なくとも1つの構成要素の前記量または前記相対的構成比は、前記測定層(4)の前記熱変換の前に決定されることを特徴とする請求項1から13のいずれか1項に記載の方法。
- 請求項1から14のいずれか1項に記載の方法を使用して製造される薄膜太陽電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17166982.3 | 2017-04-19 | ||
EP17166982 | 2017-04-19 | ||
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US20200052138A1 (en) | 2020-02-13 |
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CN111279491B (zh) | 2022-05-31 |
CN111279491A (zh) | 2020-06-12 |
US11183605B2 (en) | 2021-11-23 |
EP3613083A1 (en) | 2020-02-26 |
WO2018192512A1 (en) | 2018-10-25 |
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KR102352100B1 (ko) | 2022-01-14 |
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