JP2016541124A - 薄膜太陽電池用層系 - Google Patents
薄膜太陽電池用層系 Download PDFInfo
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- JP2016541124A JP2016541124A JP2016539927A JP2016539927A JP2016541124A JP 2016541124 A JP2016541124 A JP 2016541124A JP 2016539927 A JP2016539927 A JP 2016539927A JP 2016539927 A JP2016539927 A JP 2016539927A JP 2016541124 A JP2016541124 A JP 2016541124A
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- Prior art keywords
- layer
- buffer layer
- cesium
- potassium
- indium
- Prior art date
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- Granted
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- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 239000000872 buffer Substances 0.000 claims abstract description 210
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 92
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000011591 potassium Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 71
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 69
- -1 chalcogenide compound Chemical class 0.000 claims abstract description 36
- 238000010521 absorption reaction Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 54
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 26
- YHZXAWBFQQAKSF-UHFFFAOYSA-N [S].[In].[Cs] Chemical class [S].[In].[Cs] YHZXAWBFQQAKSF-UHFFFAOYSA-N 0.000 claims description 22
- METKEZAUWIDCQZ-UHFFFAOYSA-N [S].[In].[K] Chemical compound [S].[In].[K] METKEZAUWIDCQZ-UHFFFAOYSA-N 0.000 claims description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
- 150000003112 potassium compounds Chemical class 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 238000005240 physical vapour deposition Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 239000002250 absorbent Substances 0.000 claims description 7
- 230000002745 absorbent Effects 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 238000005118 spray pyrolysis Methods 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002585 base Substances 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- QTNDMWXOEPGHBT-UHFFFAOYSA-N dicesium;sulfide Chemical compound [S-2].[Cs+].[Cs+] QTNDMWXOEPGHBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- DPLVEEXVKBWGHE-UHFFFAOYSA-N potassium sulfide Chemical compound [S-2].[K+].[K+] DPLVEEXVKBWGHE-UHFFFAOYSA-N 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910003363 ZnMgO Inorganic materials 0.000 claims 1
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 description 30
- 229910052738 indium Inorganic materials 0.000 description 27
- 239000010949 copper Substances 0.000 description 24
- 229910052733 gallium Inorganic materials 0.000 description 19
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 18
- 239000011669 selenium Substances 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 239000011593 sulfur Substances 0.000 description 16
- 229910052711 selenium Inorganic materials 0.000 description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 14
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 13
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 13
- 239000007858 starting material Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 9
- 239000011734 sodium Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 6
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052951 chalcopyrite Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000002366 halogen compounds Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- RBORURQQJIQWBS-QVRNUERCSA-N (4ar,6r,7r,7as)-6-(6-amino-8-bromopurin-9-yl)-2-hydroxy-2-sulfanylidene-4a,6,7,7a-tetrahydro-4h-furo[3,2-d][1,3,2]dioxaphosphinin-7-ol Chemical compound C([C@H]1O2)OP(O)(=S)O[C@H]1[C@@H](O)[C@@H]2N1C(N=CN=C2N)=C2N=C1Br RBORURQQJIQWBS-QVRNUERCSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 description 1
- QEWCDOSBINPOPV-UHFFFAOYSA-N S(=O)(=O)(O)[Se]S(=O)(=O)O.[Sn].[Zn].[Cu] Chemical compound S(=O)(=O)(O)[Se]S(=O)(=O)O.[Sn].[Zn].[Cu] QEWCDOSBINPOPV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PHXNCJYDDFJJHJ-UHFFFAOYSA-N [In+3].[S-2].[K+].[S-2] Chemical compound [In+3].[S-2].[K+].[S-2] PHXNCJYDDFJJHJ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical class [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
0.015≦x/(x+y+z)≦0.25および
0.30≦y/(y+z)≦0.45。有利には以下の組成が存在する。0.02≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45;または0.03≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45;または0.04≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45。これらの範囲において、太陽電池の効率の顕著な改善が有利に得られる。
0.05≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45。これらの範囲において、太陽電池の効率の特に高度な改善が有利に得られる。特に有利には、半導体材料は下記の組成を有する。
0.05≦x/(x+y+z)≦0.20および0.30≦y/(y+z)≦0.45。これらの値について、特に高い効率を測定することができた。
0.05≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45、好ましくは0.05≦x/(x+y+z)≦0.20および0.35≦y/(y+z)≦0.45である。
・2つ以上のカリウムまたはセシウムの層が1つまたは複数の硫化インジウム層と交互に蒸着され、または
・2つ以上の硫化インジウムの層が1つまたは複数のカリウムまたはセシウムの層と交互に蒸着される。即ち、極めて均一なバッファー層5を製造することができ、それにより太陽電池の効率が増大する。効率をさらに改善するために界面を電気的に不動態化するため、カリウムまたはセシウムの層を吸収層4の上の最初の層として適用することが特に有利である。
2 基板
3 リア電極
4 吸収層
5 第1のバッファー層
6 第2のバッファー層
7 フロント電極
8 第1の供給源
9 第2の供給源
10 輸送方向
11 第1の蒸気ビーム
12 第2の蒸気ビーム
13 試料キャリア
100 薄膜太陽電池
Claims (16)
- 薄膜太陽電池100用の層系1であって、
・カルコゲナイド化合物半導体を含む吸収層4、
・前記吸収層4の上に配置されたバッファー層5を含み、
前記バッファー層5が式AxInySzの半導体材料を有し、Aがカリウム(K)および/またはセシウム(Cs)であり、
0.015≦x/(x+y+z)≦0.25および
0.30≦y/(y+z)≦0.45
である、層系1。 - 前記バッファー層5において
0.05≦x/(x+y+z)≦0.20および
0.35≦y/(y+z)≦0.45である、請求項1に記載の層系1。 - 前記バッファー層5において、A=Kであり、
0.05≦x/(x+y+z)≦0.15および
0.35≦y/(y+z)≦0.45である、請求項1に記載の層系1。 - 前記バッファー層5において、A=Csであり、
0.05≦x/(x+y+z)≦0.12および
0.35≦y/(y+z)≦0.45である、請求項1に記載の層系1。 - 前記バッファー層5が、フッ素(F)、塩素(Cl)、臭素(Br)、およびヨウ素(I)からなる群から特に選択される少なくとも1つのハロゲンを有する、請求項1から4のいずれか一項に記載の層系1。
- 前記バッファー層5のハロゲン含量が前記バッファー層5のアルカリ含量に相当する、請求項5に記載の層系1。
- AxInySzを含有する第1のバッファー層5の上に第2のバッファー層6が配置され、前記第2のバッファー層6が特に非ドープ酸化亜鉛(ZnO)および/または非ドープ酸化亜鉛マグネシウム(ZnMgO)を含む、請求項1から6のいずれか一項に記載の層系1。
- 前記バッファー層5が亜鉛(Zn)を含み、亜鉛含量が最大で15原子%である、請求項1から7のいずれか一項に記載の層系1。
- 前記第1のバッファー層5の亜鉛含量が前記第2のバッファー層6まで増大する、請求項7または8に記載の層系1。
- ・基板2、
・前記基板2の上に配置されたリア電極3、
・前記リア電極3の上に配置された、請求項1から9のいずれか一項に記載の層系1、および
・前記層系1の上に配置されたフロント電極7
を含む薄膜太陽電池100。 - 請求項1から9のいずれか一項に記載の層系1を製造する方法であって、
a)カルコゲナイド化合物半導体を含む吸収層4が調製されるステップ、および
b)前記吸収層4の上にバッファー層5が配置されるステップを含み、
前記バッファー層が式AxInySzの半導体材料を有し、0.015≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45であり、Aがカリウムおよび/またはセシウムであり、前記バッファー層5が少なくとも1つのカリウム化合物および硫化インジウムをベースとして、および/または少なくとも1つのセシウム化合物および硫化インジウムをベースとして、特に原子層蒸着(ALD)、イオン層ガス蒸着(ILGAR)、噴霧熱分解、化学気相蒸着(CVD)もしくは物理気相蒸着(PVD)、スパッタリング、熱蒸発、または電子線蒸発によって、特にカリウム化合物および/またはセシウム化合物ならびに硫化インジウムの個別の供給源から製造される、方法。 - 前記吸収層4がインライン法または回転法においてカリウム化合物および/またはセシウム化合物の少なくとも1つの蒸気ビーム11ならびに硫化インジウムの少なくとも1つの蒸気ビーム12を通して、特に少なくとも部分的に重なっている蒸気ビーム11、12により輸送される、請求項11に記載の方法。
- 前記バッファー層5が少なくとも1つのハロゲン化カリウムおよび/または少なくとも1つの二元カリウム化合物、特に硫化カリウム、および/または少なくとも1つの三元カリウム化合物、特に少なくとも1つの三元カリウムインジウム硫黄化合物、たとえばKInS2、KIn3S5、KIn5S6、KIn5S7、および/またはKIn5S8、ならびに/あるいは少なくとも1つのハロゲン化セシウムおよび/または少なくとも1つの二元セシウム化合物、特に硫化セシウム、および/または少なくとも1つの三元セシウム化合物、特に少なくとも1つの三元セシウムインジウム硫黄化合物、たとえばCsInS2、CsIn3S5、CsIn5S6、CsIn5S7、および/またはCsIn5S8をベースとして製造される、請求項11または12に記載の方法。
- 請求項1から9のいずれか一項に記載の層系1を製造する方法であって、
a)カルコゲナイド化合物半導体を含む吸収層4が調製されるステップ、および
b)前記吸収層4の上にバッファー層5が配置されるステップを含み、
前記バッファー層が式AxInySzの半導体材料を有し、0.015≦x/(x+y+z)≦0.25および0.30≦y/(y+z)≦0.45であり、Aがカリウムおよび/またはセシウムであり、前記バッファー層5が少なくとも1つの三元カリウムインジウム硫黄化合物、たとえばKInS2、KIn3S5、KIn5S6、KIn5S7、および/またはKIn5S8をベースとして、および/または少なくとも1つの三元セシウムインジウム硫黄化合物、たとえばCsInS2、CsIn3S5、CsIn5S6、CsIn5S7、および/またはCsIn5S8をベースとして、特に原子層蒸着(ALD)、イオン層ガス蒸着(ILGAR)、噴霧熱分解、化学気相蒸着(CVD)もしくは物理気相蒸着(PVD)、スパッタリング、熱蒸発、または電子線蒸発によって製造される、方法。 - ステップb)において前記バッファー層5が気相から蒸着され、蒸着される材料の少なくとも1つの成分の濃度がその気相、ひいては前記吸収層4の上に蒸着される前の気相における選択的結合により、低減している、請求項14に記載の方法。
- 前記吸収層4がインライン法または回転法において三元カリウムインジウム硫黄化合物の蒸気ビーム11を通して、および/または三元セシウムインジウム硫黄化合物の蒸気ビーム11を通して、特に少なくとも部分的に重なっている蒸気ビーム11、12により輸送される、請求項14または15に記載の方法。
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EP3087615A1 (en) | 2016-11-02 |
CN111490117B (zh) | 2022-03-11 |
EP3087615B1 (en) | 2019-10-09 |
KR101882595B1 (ko) | 2018-08-24 |
EP3087615A4 (en) | 2017-09-27 |
WO2015096689A1 (en) | 2015-07-02 |
CN106716646B (zh) | 2020-06-09 |
JP6510529B2 (ja) | 2019-05-08 |
EP2887405A1 (de) | 2015-06-24 |
CN106716646A (zh) | 2017-05-24 |
KR20160137947A (ko) | 2016-12-02 |
US20170033245A1 (en) | 2017-02-02 |
ES2765496T3 (es) | 2020-06-09 |
CN111490117A (zh) | 2020-08-04 |
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