JP2020507203A - 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器 - Google Patents

光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器 Download PDF

Info

Publication number
JP2020507203A
JP2020507203A JP2019536064A JP2019536064A JP2020507203A JP 2020507203 A JP2020507203 A JP 2020507203A JP 2019536064 A JP2019536064 A JP 2019536064A JP 2019536064 A JP2019536064 A JP 2019536064A JP 2020507203 A JP2020507203 A JP 2020507203A
Authority
JP
Japan
Prior art keywords
junction
circuit
doped portion
optical
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019536064A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020507203A5 (https=
Inventor
ジョン メイル バリー
ジョン メイル バリー
Original Assignee
日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/395,584 external-priority patent/US10074639B2/en
Application filed by 日本テキサス・インスツルメンツ合同会社, テキサス インスツルメンツ インコーポレイテッド, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ合同会社
Publication of JP2020507203A publication Critical patent/JP2020507203A/ja
Publication of JP2020507203A5 publication Critical patent/JP2020507203A5/ja
Priority to JP2023180857A priority Critical patent/JP7772758B2/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
    • H04B10/802—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections for isolation, e.g. using optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/293—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
JP2019536064A 2016-12-30 2017-12-29 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器 Pending JP2020507203A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023180857A JP7772758B2 (ja) 2016-12-30 2023-10-20 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/395,584 US10074639B2 (en) 2016-12-30 2016-12-30 Isolator integrated circuits with package structure cavity and fabrication methods
US15/395,584 2016-12-30
US15/612,327 2017-06-02
US15/612,327 US10411150B2 (en) 2016-12-30 2017-06-02 Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions
PCT/US2017/068997 WO2018126161A1 (en) 2016-12-30 2017-12-29 Optical isolation systems and circuits and photon detectors with extended lateral p-n junctions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023180857A Division JP7772758B2 (ja) 2016-12-30 2023-10-20 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器

Publications (2)

Publication Number Publication Date
JP2020507203A true JP2020507203A (ja) 2020-03-05
JP2020507203A5 JP2020507203A5 (https=) 2021-02-12

Family

ID=62710085

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019536064A Pending JP2020507203A (ja) 2016-12-30 2017-12-29 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器
JP2023180857A Active JP7772758B2 (ja) 2016-12-30 2023-10-20 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023180857A Active JP7772758B2 (ja) 2016-12-30 2023-10-20 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器

Country Status (5)

Country Link
US (1) US10411150B2 (https=)
EP (1) EP3563424A4 (https=)
JP (2) JP2020507203A (https=)
CN (1) CN109906517B (https=)
WO (1) WO2018126161A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023043130A (ja) * 2021-09-15 2023-03-28 株式会社東芝 光検出器、光検出システム、ライダー装置、及び移動体

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128400B1 (en) * 2017-07-26 2018-11-13 Harris Corporation Optocoupler for the control of high voltage
US11366401B2 (en) * 2017-09-22 2022-06-21 Lawrence Livermore National Security, Llc Photoconductive charge trapping apparatus
GB202003507D0 (en) * 2020-03-11 2020-04-29 Spencer Peter Opto-electronic assemblies
US12166145B2 (en) 2020-08-10 2024-12-10 Lawrence Livermore National Security, Llc Diffuse discharge circuit breaker
DE102021210618A1 (de) * 2021-09-23 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung
DE102021210621A1 (de) 2021-09-23 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung
WO2023061637A1 (en) 2021-10-15 2023-04-20 Ams-Osram International Gmbh Optoelectronic device
CN114068755A (zh) * 2021-12-29 2022-02-18 上海集成电路研发中心有限公司 雪崩光电二极管及其制作方法
US20240395736A1 (en) * 2023-05-23 2024-11-28 Allegro Microsystems, Llc Transformer-based isolator with sense coil

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4210923A (en) * 1979-01-02 1980-07-01 Bell Telephone Laboratories, Incorporated Edge illuminated photodetector with optical fiber alignment
JPS63231230A (ja) * 1987-03-02 1988-09-27 ロックウェル・インターナショナル・コーポレーション 端部照明光検出器アレイ
JPH0613648A (ja) * 1984-01-23 1994-01-21 Internatl Rectifier Corp 光電圧絶縁器および光電圧スタック
US20070034250A1 (en) * 2005-07-27 2007-02-15 Rensselaer Polytechnic Institute Edge illumination photovoltaic devices and methods of making same
JP2010536165A (ja) * 2007-08-06 2010-11-25 マックス プランク ゲゼルシャフト ツゥアー フェデルゥン デル ヴィッセンシャフテン エー フォー アバランシェフォトダイオード
JP2012119529A (ja) * 2010-12-01 2012-06-21 Nippon Telegr & Teleph Corp <Ntt> 太陽光発電装置
US20120153417A1 (en) * 2010-12-16 2012-06-21 National Central University Laser Power Converter for Data Detection and Optical-to-Electrical Power Generation

Family Cites Families (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363155A (en) * 1964-08-19 1968-01-09 Philips Corp Opto-electronic transistor with a base-collector junction spaced from the material heterojunction
US4007978A (en) 1974-01-18 1977-02-15 Texas Instruments Incorporated Integrated optical circuits
US3952265A (en) * 1974-10-29 1976-04-20 Hughes Aircraft Company Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines
US4272753A (en) 1978-08-16 1981-06-09 Harris Corporation Integrated circuit fuse
US4267484A (en) 1979-08-28 1981-05-12 The United States Of America As Represented By The Secretary Of The Air Force Parallel multi-electrode spark gap switch
US4996577A (en) 1984-01-23 1991-02-26 International Rectifier Corporation Photovoltaic isolator and process of manufacture thereof
US4916506A (en) 1988-11-18 1990-04-10 Sprague Electric Company Integrated-circuit lead-frame package with low-resistance ground-lead and heat-sink means
US4891730A (en) 1989-05-10 1990-01-02 The United States Of America As Represented By The Secretary Of The Army Monolithic microwave integrated circuit terminal protection device
US5340993A (en) 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JPH0715030A (ja) 1993-06-07 1995-01-17 Motorola Inc 線形集積光結合素子およびその製造方法
US6728113B1 (en) 1993-06-24 2004-04-27 Polychip, Inc. Method and apparatus for non-conductively interconnecting integrated circuits
US5389578A (en) 1994-01-04 1995-02-14 Texas Instruments Incorporated Optical coupler
US5514892A (en) 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device
US5796570A (en) 1996-09-19 1998-08-18 National Semiconductor Corporation Electrostatic discharge protection package
US6111305A (en) 1997-10-09 2000-08-29 Nippon Telegraph And Telephone Corporation P-I-N semiconductor photodetector
DE19800459A1 (de) 1998-01-08 1999-07-22 Siemens Ag Oszillatorstruktur mit wenigstens einem Oszillator-Schaltkreis und wenigstens einem Resonator
JPH11274196A (ja) 1998-03-26 1999-10-08 Seiko Epson Corp 半導体装置の製造方法およびモールドシステム並びに半導体装置
US5929514A (en) 1998-05-26 1999-07-27 Analog Devices, Inc. Thermally enhanced lead-under-paddle I.C. leadframe
US5990519A (en) 1998-11-27 1999-11-23 United Microelectronics Corp. Electrostatic discharge structure
US6351011B1 (en) 1998-12-08 2002-02-26 Littlefuse, Inc. Protection of an integrated circuit with voltage variable materials
JP2000311959A (ja) 1999-04-27 2000-11-07 Sanyo Electric Co Ltd 半導体装置とその製造方法
US6177686B1 (en) 1999-06-23 2001-01-23 Trw Inc. High power waveguide photodiode with an absorption layer with reduced absorption coefficient
RU2169962C2 (ru) 1999-07-13 2001-06-27 Минг-Тунг ШЕН Модуль с полупроводниковыми микросхемами и способ его изготовления
KR20010037247A (ko) 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
US6509574B2 (en) 1999-12-02 2003-01-21 Texas Instruments Incorporated Optocouplers having integrated organic light-emitting diodes
US6507264B1 (en) 2000-08-28 2003-01-14 Littelfuse, Inc. Integral fuse for use in semiconductor packages
US6538299B1 (en) * 2000-10-03 2003-03-25 International Business Machines Corporation Silicon-on-insulator (SOI) trench photodiode
JP4565727B2 (ja) 2000-10-10 2010-10-20 三洋電機株式会社 半導体装置の製造方法
RU2201017C2 (ru) 2000-10-26 2003-03-20 Зао "Синтэк" Оптрон
US6801114B2 (en) 2002-01-23 2004-10-05 Broadcom Corp. Integrated radio having on-chip transformer balun
JP2003282935A (ja) * 2002-03-26 2003-10-03 Sharp Corp 光結合素子、その製造方法、及び電子機器
US20030183916A1 (en) 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
US6879004B2 (en) 2002-11-05 2005-04-12 Silicon Labs Cp, Inc. High voltage difference amplifier with spark gap ESD protection
US6977468B1 (en) 2003-02-03 2005-12-20 Auburn University Integrated spark gap device
RU2263999C1 (ru) 2004-02-02 2005-11-10 ЗАО "Синтез электронных компонентов" Интегральный оптрон
US7196313B2 (en) 2004-04-02 2007-03-27 Fairchild Semiconductor Corporation Surface mount multi-channel optocoupler
US7180098B2 (en) * 2004-04-05 2007-02-20 Legerity, Inc. Optical isolator device, and method of making same
US7508644B2 (en) 2004-06-30 2009-03-24 Research In Motion Limited Spark gap apparatus and method for electrostatic discharge protection
US7015587B1 (en) 2004-09-07 2006-03-21 National Semiconductor Corporation Stacked die package for semiconductor devices
JP5011115B2 (ja) 2004-10-18 2012-08-29 スタッツ・チップパック・インコーポレイテッド マルチチップリードフレーム半導体パッケージ
JP4724488B2 (ja) 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム
KR100833017B1 (ko) 2005-05-12 2008-05-27 주식회사 엘지화학 직접 패턴법을 이용한 고해상도 패턴형성방법
ZA200803120B (en) 2005-09-14 2010-10-27 Univ Witwatersrand Jhb Spark gap protection device
JP4594205B2 (ja) 2005-10-05 2010-12-08 本田技研工業株式会社 車両用方向指示灯
JP5001564B2 (ja) 2006-03-17 2012-08-15 日本電波工業株式会社 表面実装用の水晶発振器とその製造方法
US7732892B2 (en) 2006-11-03 2010-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Fuse structures and integrated circuit devices
US7834435B2 (en) 2006-12-27 2010-11-16 Mediatek Inc. Leadframe with extended pad segments between leads and die pad, and leadframe package using the same
US20080217759A1 (en) 2007-03-06 2008-09-11 Taiwan Solutions Systems Corp. Chip package substrate and structure thereof
US20080266730A1 (en) 2007-04-25 2008-10-30 Karsten Viborg Spark Gaps for ESD Protection
JP2008277469A (ja) * 2007-04-27 2008-11-13 Hitachi Ltd 感光性ｓａｍ膜の露光方法および半導体装置の製造方法
US8436460B1 (en) 2007-05-04 2013-05-07 Cypress Semiconductor Corporation Multiple die paddle leadframe and semiconductor device package
JP5076725B2 (ja) 2007-08-13 2012-11-21 富士電機株式会社 絶縁トランスおよび電力変換装置
JP4912275B2 (ja) 2007-11-06 2012-04-11 新光電気工業株式会社 半導体パッケージ
US7847387B2 (en) 2007-11-16 2010-12-07 Infineon Technologies Ag Electrical device and method
US7842542B2 (en) 2008-07-14 2010-11-30 Stats Chippac, Ltd. Embedded semiconductor die package and method of making the same using metal frame carrier
US8148781B2 (en) 2008-07-28 2012-04-03 MCube Inc. Method and structures of monolithically integrated ESD suppression device
US8072770B2 (en) 2008-10-14 2011-12-06 Texas Instruments Incorporated Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame
JP5590814B2 (ja) 2009-03-30 2014-09-17 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2010245337A (ja) 2009-04-07 2010-10-28 Elpida Memory Inc 半導体装置及びその製造方法
EP2252077B1 (en) 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8183593B2 (en) 2009-10-16 2012-05-22 Oracle America, Inc. Semiconductor die with integrated electro-static discharge device
GB2475099B (en) * 2009-11-06 2012-09-05 Toshiba Res Europ Ltd A photon source for producing entangled photons
US8410463B2 (en) 2009-11-12 2013-04-02 Fairchild Semiconductor Corporation Optocoupler devices
US8368232B2 (en) 2010-03-25 2013-02-05 Qualcomm Incorporated Sacrificial material to facilitate thin die attach
US8260098B1 (en) 2011-02-17 2012-09-04 Nxp B.V. Optocoupler circuit
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9279946B2 (en) 2012-05-23 2016-03-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Premolded cavity for optoelectronic device
DE102012208730A1 (de) 2012-05-24 2013-11-28 Osram Opto Semiconductors Gmbh Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
US8674509B2 (en) 2012-05-31 2014-03-18 Freescale Semiconductor, Inc. Integrated circuit die assembly with heat spreader
US9011176B2 (en) 2012-06-09 2015-04-21 Apple Inc. ESD path for connector receptacle
US8633551B1 (en) 2012-06-29 2014-01-21 Intel Corporation Semiconductor package with mechanical fuse
US8704370B2 (en) 2012-06-29 2014-04-22 Freescale Semiconductor, Inc. Semiconductor package structure having an air gap and method for forming
JP6084401B2 (ja) * 2012-08-30 2017-02-22 浜松ホトニクス株式会社 側面入射型のフォトダイオードの製造方法
US9184012B2 (en) 2012-12-19 2015-11-10 Allegro Microsystems, Llc Integrated circuit fuse and method of fabricating the integrated circuit fuse
DE102013101262A1 (de) 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
US20150380353A1 (en) 2013-02-12 2015-12-31 Freescale Semiconductor, Inc. Method of fabricating an integrated circuit device, and an integrated circuit device therefrom
US9349616B2 (en) 2013-03-13 2016-05-24 Stats Chippac, Ltd. Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure
JP6256933B2 (ja) 2013-05-23 2018-01-10 木村　光照 濃縮機能を有する水素ガスセンサとこれに用いる水素ガスセンサプローブ
ITTO20130651A1 (it) 2013-07-31 2015-02-01 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo incapsulato, in particolare un sensore micro-elettro-meccanico incapsulato, dotato di una struttura accessibile, quale un microfono mems e dispositivo incapsulato cosi' ottenuto
US20150069537A1 (en) 2013-09-08 2015-03-12 Wai Yew Lo Package-on-package semiconductor sensor device
GB2521619A (en) 2013-12-23 2015-07-01 Nokia Technologies Oy An apparatus and associated methods for flexible carrier substrates
US9818665B2 (en) 2014-02-28 2017-11-14 Infineon Technologies Ag Method of packaging a semiconductor chip using a 3D printing process and semiconductor package having angled surfaces
US9863828B2 (en) 2014-06-18 2018-01-09 Seiko Epson Corporation Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object
JP2016003977A (ja) 2014-06-18 2016-01-12 セイコーエプソン株式会社 物理量センサー装置、高度計、電子機器および移動体
TWI691036B (zh) 2014-06-23 2020-04-11 澳大利亞商西拉娜集團私人有限公司 具有隔離部的接合晶粒
US9472788B2 (en) 2014-08-27 2016-10-18 3M Innovative Properties Company Thermally-assisted self-assembly method of nanoparticles and nanowires within engineered periodic structures
US20160167089A1 (en) 2014-12-11 2016-06-16 Palo Alto Research Center Incorporation Forming sacrificial structures using phase-change materials that sublimate
US20160209285A1 (en) 2015-01-20 2016-07-21 Seiko Epson Corporation Pressure sensor, method of manufacturing pressure sensor, altimeter, electronic apparatus, and moving object
US9419075B1 (en) 2015-01-28 2016-08-16 Texas Instruments Incorporated Wafer substrate removal
JP2017067463A (ja) 2015-09-28 2017-04-06 セイコーエプソン株式会社 圧力センサー、高度計、電子機器および移動体
JP2017092698A (ja) 2015-11-10 2017-05-25 セイコーエプソン株式会社 発振器、電子機器、及び、移動体
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US9929110B1 (en) 2016-12-30 2018-03-27 Texas Instruments Incorporated Integrated circuit wave device and method
CN107180883A (zh) * 2017-05-04 2017-09-19 南京邮电大学 基于InGaN光子单片集成的多维空间可见光通信系统

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4210923A (en) * 1979-01-02 1980-07-01 Bell Telephone Laboratories, Incorporated Edge illuminated photodetector with optical fiber alignment
JPH0613648A (ja) * 1984-01-23 1994-01-21 Internatl Rectifier Corp 光電圧絶縁器および光電圧スタック
JPS63231230A (ja) * 1987-03-02 1988-09-27 ロックウェル・インターナショナル・コーポレーション 端部照明光検出器アレイ
US20070034250A1 (en) * 2005-07-27 2007-02-15 Rensselaer Polytechnic Institute Edge illumination photovoltaic devices and methods of making same
JP2010536165A (ja) * 2007-08-06 2010-11-25 マックス プランク ゲゼルシャフト ツゥアー フェデルゥン デル ヴィッセンシャフテン エー フォー アバランシェフォトダイオード
JP2012119529A (ja) * 2010-12-01 2012-06-21 Nippon Telegr & Teleph Corp <Ntt> 太陽光発電装置
US20120153417A1 (en) * 2010-12-16 2012-06-21 National Central University Laser Power Converter for Data Detection and Optical-to-Electrical Power Generation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023043130A (ja) * 2021-09-15 2023-03-28 株式会社東芝 光検出器、光検出システム、ライダー装置、及び移動体
JP7663522B2 (ja) 2021-09-15 2025-04-16 株式会社東芝 光検出器、光検出システム、ライダー装置、及び移動体

Also Published As

Publication number Publication date
EP3563424A4 (en) 2020-01-29
WO2018126161A1 (en) 2018-07-05
EP3563424A1 (en) 2019-11-06
JP2023182806A (ja) 2023-12-26
US20180190855A1 (en) 2018-07-05
CN109906517B (zh) 2022-11-08
JP7772758B2 (ja) 2025-11-18
US10411150B2 (en) 2019-09-10
CN109906517A (zh) 2019-06-18

Similar Documents

Publication Publication Date Title
JP7772758B2 (ja) 光絶縁システム及び回路、及び拡張された横方向ｐｎ接合を備える光子検出器
US10347670B2 (en) Photodetection element
CN107665886B (zh) 用于检测红外线辐射的盖革模式雪崩光电二极管阵列
US20170236852A1 (en) Semiconductor Photomultiplier
KR101947088B1 (ko) 애벌란시 광검출기
CN118538821A (zh) 光学装置和成像系统
US4318115A (en) Dual junction photoelectric semiconductor device
WO2008059593A1 (fr) Dispositif de cellule solaire superposée
US11676976B2 (en) PIN photodetector
CN209216971U (zh) 雪崩光电二极管阵列探测器
CN107331726B (zh) 一种集成光耦合器件及其制造方法
WO1980001336A1 (en) A demultiplexing photodetector
US10109671B2 (en) Photodiode array structure for cross talk suppression
CN114551412B (zh) 无串扰铟镓砷盖革模式焦平面探测芯片结构及制作方法
CN211061698U (zh) 用于检测光的装置
KR101667631B1 (ko) 박막 태양전지 및 그의 제조 방법
TWI858408B (zh) 光電裝置
KR102672313B1 (ko) 전자파 간섭 제거 기능을 갖는 수광 소자
TWI899973B (zh) 光電裝置
CN121442810A (zh) 一种光电探测成像集成芯片及其使用方法
JP2024169356A (ja) 受光素子およびその組立方法
CN117999658A (zh) 光电装置
RU2617881C2 (ru) Интегральная схема быстродействующего матричного приемника оптических излучений
CN121531812A (zh) 一种光电探测结构及其制作方法
CN117542906A (zh) 一种光敏元件及其制造方法、光敏探测器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20190701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201226

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20210218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210323

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210602

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211025

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211208

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20220307

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20220509

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20220516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220608

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221005

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20230104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230304

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230704