CN107665886B - 用于检测红外线辐射的盖革模式雪崩光电二极管阵列 - Google Patents
用于检测红外线辐射的盖革模式雪崩光电二极管阵列 Download PDFInfo
- Publication number
- CN107665886B CN107665886B CN201710193662.9A CN201710193662A CN107665886B CN 107665886 B CN107665886 B CN 107665886B CN 201710193662 A CN201710193662 A CN 201710193662A CN 107665886 B CN107665886 B CN 107665886B
- Authority
- CN
- China
- Prior art keywords
- region
- array
- wavelengths
- optoelectronic device
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 52
- 238000005538 encapsulation Methods 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 16
- 238000003491 array Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 13
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920002574 CR-39 Polymers 0.000 claims description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims 37
- 239000004593 Epoxy Substances 0.000 claims 3
- NNWNNQTUZYVQRK-UHFFFAOYSA-N 5-bromo-1h-pyrrolo[2,3-c]pyridine-2-carboxylic acid Chemical compound BrC1=NC=C2NC(C(=O)O)=CC2=C1 NNWNNQTUZYVQRK-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 115
- 238000001465 metallisation Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 230000002441 reversible effect Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010791 quenching Methods 0.000 description 7
- 230000000171 quenching effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000752 ionisation method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 230000001960 triggered effect Effects 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 229910000967 As alloy Inorganic materials 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000645 Hg alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (54)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102016000079027A IT201600079027A1 (it) | 2016-07-27 | 2016-07-27 | Schiera di fotodiodi a valanga operanti in modalita' geiger per la rilevazione di radiazione infrarossa |
IT102016000079027 | 2016-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107665886A CN107665886A (zh) | 2018-02-06 |
CN107665886B true CN107665886B (zh) | 2020-06-16 |
Family
ID=57610191
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720315788.4U Withdrawn - After Issue CN207250518U (zh) | 2016-07-27 | 2017-03-28 | 盖革模式雪崩光电二极管阵列、光电子器件和检测系统 |
CN201710193662.9A Active CN107665886B (zh) | 2016-07-27 | 2017-03-28 | 用于检测红外线辐射的盖革模式雪崩光电二极管阵列 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720315788.4U Withdrawn - After Issue CN207250518U (zh) | 2016-07-27 | 2017-03-28 | 盖革模式雪崩光电二极管阵列、光电子器件和检测系统 |
Country Status (3)
Country | Link |
---|---|
US (3) | US9899544B1 (zh) |
CN (2) | CN207250518U (zh) |
IT (1) | IT201600079027A1 (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11830954B2 (en) * | 2013-05-22 | 2023-11-28 | W&wsens Devices Inc. | Microstructure enhanced absorption photosensitive devices |
IT201600079027A1 (it) * | 2016-07-27 | 2018-01-27 | St Microelectronics Srl | Schiera di fotodiodi a valanga operanti in modalita' geiger per la rilevazione di radiazione infrarossa |
JP7169071B2 (ja) * | 2018-02-06 | 2022-11-10 | ソニーセミコンダクタソリューションズ株式会社 | 画素構造、撮像素子、撮像装置、および電子機器 |
CN108511467B (zh) * | 2018-03-06 | 2020-06-19 | 南京邮电大学 | 一种近红外宽光谱的cmos单光子雪崩二极管探测器及其制作方法 |
JP6878338B2 (ja) * | 2018-03-14 | 2021-05-26 | 株式会社東芝 | 受光装置および受光装置の製造方法 |
IT201800004622A1 (it) | 2018-04-17 | 2019-10-17 | Fotorilevatore includente un fotodiodo a valanga operante in modalita' geiger e un resistore integrato e relativo metodo di fabbricazione | |
IT201800004621A1 (it) * | 2018-04-17 | 2019-10-17 | Dispositivo optoelettronico ad elevata sensibilita' per la rilevazione di specie chimiche e relativo metodo di fabbricazione | |
IT201800004620A1 (it) | 2018-04-17 | 2019-10-17 | Dispositivo a semiconduttore ad elevata sensibilita' per la rilevazione di specie chimiche fluide e relativo metodo di fabbricazione | |
US10515993B2 (en) * | 2018-05-17 | 2019-12-24 | Hi Llc | Stacked photodetector assemblies |
US10340408B1 (en) | 2018-05-17 | 2019-07-02 | Hi Llc | Non-invasive wearable brain interface systems including a headgear and a plurality of self-contained photodetector units configured to removably attach to the headgear |
US10158038B1 (en) | 2018-05-17 | 2018-12-18 | Hi Llc | Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration |
US10420498B1 (en) | 2018-06-20 | 2019-09-24 | Hi Llc | Spatial and temporal-based diffusive correlation spectroscopy systems and methods |
US11213206B2 (en) | 2018-07-17 | 2022-01-04 | Hi Llc | Non-invasive measurement systems with single-photon counting camera |
GB201814688D0 (en) * | 2018-09-10 | 2018-10-24 | Univ Court Univ Of Glasgow | Single photon avaalanche detector method for use therof and method for it's manufacture |
WO2020131148A1 (en) | 2018-12-21 | 2020-06-25 | Hi Llc | Biofeedback for awareness and modulation of mental state using a non-invasive brain interface system and method |
CA3135228A1 (en) | 2019-05-06 | 2020-11-12 | Hi Llc | Photodetector architectures for time-correlated single photon counting |
WO2020236371A1 (en) | 2019-05-21 | 2020-11-26 | Hi Llc | Photodetector architectures for efficient fast-gating |
EP3980849A1 (en) | 2019-06-06 | 2022-04-13 | Hi LLC | Photodetector systems with low-power time-to-digital converter architectures |
US11771362B2 (en) | 2020-02-21 | 2023-10-03 | Hi Llc | Integrated detector assemblies for a wearable module of an optical measurement system |
US11096620B1 (en) | 2020-02-21 | 2021-08-24 | Hi Llc | Wearable module assemblies for an optical measurement system |
WO2021167892A1 (en) | 2020-02-21 | 2021-08-26 | Hi Llc | Wearable devices and wearable assemblies with adjustable positioning for use in an optical measurement system |
US11883181B2 (en) | 2020-02-21 | 2024-01-30 | Hi Llc | Multimodal wearable measurement systems and methods |
US11515014B2 (en) | 2020-02-21 | 2022-11-29 | Hi Llc | Methods and systems for initiating and conducting a customized computer-enabled brain research study |
US11969259B2 (en) | 2020-02-21 | 2024-04-30 | Hi Llc | Detector assemblies for a wearable module of an optical measurement system and including spring-loaded light-receiving members |
US11950879B2 (en) | 2020-02-21 | 2024-04-09 | Hi Llc | Estimation of source-detector separation in an optical measurement system |
US11187575B2 (en) | 2020-03-20 | 2021-11-30 | Hi Llc | High density optical measurement systems with minimal number of light sources |
WO2021188486A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Phase lock loop circuit based adjustment of a measurement time window in an optical measurement system |
US11864867B2 (en) | 2020-03-20 | 2024-01-09 | Hi Llc | Control circuit for a light source in an optical measurement system by applying voltage with a first polarity to start an emission of a light pulse and applying voltage with a second polarity to stop the emission of the light pulse |
WO2021188487A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Temporal resolution control for temporal point spread function generation in an optical measurement system |
US11903676B2 (en) | 2020-03-20 | 2024-02-20 | Hi Llc | Photodetector calibration of an optical measurement system |
US11877825B2 (en) | 2020-03-20 | 2024-01-23 | Hi Llc | Device enumeration in an optical measurement system |
US11857348B2 (en) | 2020-03-20 | 2024-01-02 | Hi Llc | Techniques for determining a timing uncertainty of a component of an optical measurement system |
US11245404B2 (en) | 2020-03-20 | 2022-02-08 | Hi Llc | Phase lock loop circuit based signal generation in an optical measurement system |
US11819311B2 (en) | 2020-03-20 | 2023-11-21 | Hi Llc | Maintaining consistent photodetector sensitivity in an optical measurement system |
JP7431699B2 (ja) * | 2020-08-20 | 2024-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
EP4307655A1 (en) * | 2022-07-13 | 2024-01-17 | ScReIn UG | Semiconductor digital photomultiplier photon counter and imager and related technology |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101258577A (zh) * | 2005-06-10 | 2008-09-03 | 增强技术公司 | 高灵敏度、高分辨率的检测器装置和阵列 |
CN104515593A (zh) * | 2013-09-27 | 2015-04-15 | 美格纳半导体有限公司 | 光学传感器和利用光学传感器的方法 |
CN207250518U (zh) * | 2016-07-27 | 2018-04-17 | 意法半导体股份有限公司 | 盖革模式雪崩光电二极管阵列、光电子器件和检测系统 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
US10636929B2 (en) * | 2009-04-30 | 2020-04-28 | Massachusetts Institute Of Technology | Cross-talk suppression in Geiger-mode avalanche photodiodes |
IT1399690B1 (it) * | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
JP5703825B2 (ja) * | 2011-02-22 | 2015-04-22 | ソニー株式会社 | 撮像装置およびカメラモジュール |
US9395182B1 (en) * | 2011-03-03 | 2016-07-19 | The Boeing Company | Methods and systems for reducing crosstalk in avalanche photodiode detector arrays |
ITTO20110649A1 (it) * | 2011-07-19 | 2013-01-20 | St Microelectronics Srl | Dispositivo di fotorivelazione con copertura protettiva e antiriflesso, e relativo metodo di fabbricazione |
JP2014060380A (ja) * | 2012-06-14 | 2014-04-03 | Rohm Co Ltd | 光電変換装置 |
-
2016
- 2016-07-27 IT IT102016000079027A patent/IT201600079027A1/it unknown
-
2017
- 2017-03-03 US US15/449,655 patent/US9899544B1/en active Active
- 2017-03-28 CN CN201720315788.4U patent/CN207250518U/zh not_active Withdrawn - After Issue
- 2017-03-28 CN CN201710193662.9A patent/CN107665886B/zh active Active
-
2018
- 2018-01-11 US US15/868,929 patent/US10205036B2/en active Active
- 2018-12-20 US US16/228,483 patent/US10700220B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101258577A (zh) * | 2005-06-10 | 2008-09-03 | 增强技术公司 | 高灵敏度、高分辨率的检测器装置和阵列 |
CN104515593A (zh) * | 2013-09-27 | 2015-04-15 | 美格纳半导体有限公司 | 光学传感器和利用光学传感器的方法 |
CN207250518U (zh) * | 2016-07-27 | 2018-04-17 | 意法半导体股份有限公司 | 盖革模式雪崩光电二极管阵列、光电子器件和检测系统 |
Also Published As
Publication number | Publication date |
---|---|
US20180138327A1 (en) | 2018-05-17 |
US10700220B2 (en) | 2020-06-30 |
US20190148568A1 (en) | 2019-05-16 |
US10205036B2 (en) | 2019-02-12 |
CN207250518U (zh) | 2018-04-17 |
CN107665886A (zh) | 2018-02-06 |
IT201600079027A1 (it) | 2018-01-27 |
US20180033895A1 (en) | 2018-02-01 |
US9899544B1 (en) | 2018-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107665886B (zh) | 用于检测红外线辐射的盖革模式雪崩光电二极管阵列 | |
US9773930B2 (en) | Integrated circuit with reflective material in trenches and related methods | |
US20210273120A1 (en) | Photodetectors, preparation methods for photodetectors, photodetector arrays, and photodetection terminals | |
TWI443817B (zh) | Photodiode array | |
US9419159B2 (en) | Semiconductor light-detecting element | |
KR20110136789A (ko) | 포토 다이오드 및 포토 다이오드 어레이 | |
JP2017112169A (ja) | イメージセンサ、撮像システム及びイメージセンサの製造方法 | |
CN109313072B (zh) | 光检测单元、光检测装置及光检测单元的制造方法 | |
WO2017064882A1 (ja) | 測距装置 | |
CN112033529B (zh) | 高填充因子低串扰的单光子探测器阵列及系统 | |
CN112825339A (zh) | 光电探测单元、光电探测结构和光电探测器及其制备方法 | |
US20170263793A1 (en) | Photodetector and object detection system using the same | |
JP6847795B2 (ja) | 光検出器、光検出装置、ライダー装置及び光検出器の製造方法 | |
KR20090129123A (ko) | 광검출 효율이 향상된 실리콘 광전자 증배관 및 이를포함하는 감마선 검출기 | |
CN114631186A (zh) | 器件及其制备方法、接收芯片、测距装置、可移动平台 | |
JP6862386B2 (ja) | 光検出器、ライダー装置、及び光検出器の製造方法 | |
US20190027527A1 (en) | Avalanche photodiode detector array with a crosstalk reduction layer | |
US20230187462A1 (en) | Semiconductor light detection element | |
US11860032B2 (en) | Photodetector device having avalanche photodiodes two-dimensionally arranged on a compound semiconductor layer and quenching element connected in series to the photodiodes | |
CN211017104U (zh) | 光电探测单元、光电探测结构及光电探测器 | |
KR101762431B1 (ko) | 크로스톡 방지 구조를 가지는 실리콘 광전자 증배센서 | |
US20190088812A1 (en) | Photodetection element, photodetector and laser imaging detection and ranging apparatus | |
KR101762430B1 (ko) | 이면 조사형 실리콘 광전자 증배센서 및 그 제조방법 | |
EP4100704A1 (en) | An integrated photodetecting semiconductor optoelectronic component | |
CN117374087A (zh) | 光电探测器及单光子探测系统 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180212 Address after: Italy Agra Brianza Applicant after: STMicroelectronics S.R.L. Applicant after: CONSIGLIO NAZIONALE DELLE RICERCHE Address before: Italy Agra Brianza Applicant before: STMicroelectronics S.R.L. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240514 Address after: Italy Agra Brianza Patentee after: STMicroelectronics S.R.L. Country or region after: Italy Address before: Italy Agra Brianza Patentee before: STMicroelectronics S.R.L. Country or region before: Italy Patentee before: CONSIGLIO NAZIONALE DELLE RICERCHE |