CN108511467B - 一种近红外宽光谱的cmos单光子雪崩二极管探测器及其制作方法 - Google Patents
一种近红外宽光谱的cmos单光子雪崩二极管探测器及其制作方法 Download PDFInfo
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CN201810182345.1A CN108511467B (zh) | 2018-03-06 | 2018-03-06 | 一种近红外宽光谱的cmos单光子雪崩二极管探测器及其制作方法 |
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RU2732694C1 (ru) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
CN110246903B (zh) * | 2019-06-28 | 2021-05-28 | 湖南师范大学 | 低噪声宽光谱响应的单光子雪崩光电二极管及其制作方法 |
CN110416335A (zh) * | 2019-08-05 | 2019-11-05 | 南京邮电大学 | 硅基近红外单光子雪崩二极管探测器及其制作方法 |
CN111326598A (zh) * | 2020-04-09 | 2020-06-23 | 无锡豪帮高科股份有限公司 | 智能高灵敏光耦隔离芯片传感前端用的光电雪崩二极管 |
CN113314638B (zh) * | 2021-05-21 | 2022-07-26 | 武汉光迹融微科技有限公司 | 近红外单光子雪崩二极管探测器及制作方法 |
US20230027354A1 (en) * | 2021-07-26 | 2023-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doped semiconductor structure for nir sensors |
CN115548157B (zh) * | 2022-12-05 | 2023-03-07 | 西安电子科技大学 | 一种具有宽漂移区的双结单光子雪崩二极管及其制备方法 |
Citations (7)
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CN103299437A (zh) * | 2010-09-08 | 2013-09-11 | 爱丁堡大学评议会 | 用于cmos电路的单光子雪崩二极管 |
CN105185796A (zh) * | 2015-09-30 | 2015-12-23 | 南京邮电大学 | 一种高探测效率的单光子雪崩二极管探测器阵列单元 |
CN105810775A (zh) * | 2014-12-31 | 2016-07-27 | 湘潭大学 | 一种基于cmos图像传感器工艺的np型单光子雪崩二极管 |
CN106531837A (zh) * | 2016-12-29 | 2017-03-22 | 杭州电子科技大学 | 双结单光子雪崩二极管及其制作方法 |
CN106847960A (zh) * | 2017-01-23 | 2017-06-13 | 重庆邮电大学 | 一种基于深n阱结构的单光子雪崩二极管及其制作工艺 |
CN107026212A (zh) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | 一种基于标准工艺的双pn结型单光子雪崩二极管结构 |
CN107665886A (zh) * | 2016-07-27 | 2018-02-06 | 意法半导体股份有限公司 | 用于检测红外线辐射的盖革模式雪崩光电二极管阵列 |
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JP6090060B2 (ja) * | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103299437A (zh) * | 2010-09-08 | 2013-09-11 | 爱丁堡大学评议会 | 用于cmos电路的单光子雪崩二极管 |
CN105810775A (zh) * | 2014-12-31 | 2016-07-27 | 湘潭大学 | 一种基于cmos图像传感器工艺的np型单光子雪崩二极管 |
CN105185796A (zh) * | 2015-09-30 | 2015-12-23 | 南京邮电大学 | 一种高探测效率的单光子雪崩二极管探测器阵列单元 |
CN107026212A (zh) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | 一种基于标准工艺的双pn结型单光子雪崩二极管结构 |
CN107665886A (zh) * | 2016-07-27 | 2018-02-06 | 意法半导体股份有限公司 | 用于检测红外线辐射的盖革模式雪崩光电二极管阵列 |
CN106531837A (zh) * | 2016-12-29 | 2017-03-22 | 杭州电子科技大学 | 双结单光子雪崩二极管及其制作方法 |
CN106847960A (zh) * | 2017-01-23 | 2017-06-13 | 重庆邮电大学 | 一种基于深n阱结构的单光子雪崩二极管及其制作工艺 |
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