CN114843353A - 光栅-结型复合雪崩单光子检测器及其制作方法 - Google Patents
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Abstract
本发明公开了一种光栅‑结型复合雪崩单光子检测器，包括P型衬底；P型衬底上设有N型埋层；N型埋层上设有圆形高压N阱、环形P型外延层、环形高压N阱；环形高压N阱中设有环形N+注入区，环形N+注入区外侧设有第一浅槽隔离环；环形P型外延层中设有第二浅槽隔离环；圆形高压N阱中设有低压P阱，低压P阱表面中心设有P+注入区，P+注入区外侧设有环形多晶硅栅。本发明利用两种不同的物理机制形成耗尽区，来对不同波长的光子进行波峰响应。第一个峰位处的波峰响应通过光栅结构形成的耗尽区来实现，第二个峰位处的波峰响应通过P‑Well/WN结来实现，并且两个耗尽区的深度不同，从而实现双波峰探测。
Description
技术领域
本发明涉及硅基光电二极管领域，特别涉及一种光栅-结型复合雪崩单光子检测器及其制作方法。
背景技术
作为一种固态光电探测器件，单光子雪崩光电二极管（SPAD）具有体积小，制作成本低，集成度高等优点。由于这些优势，SPAD被广泛应用于量子密钥分发、单分子检测和超分辨率显微镜等领域。与普通的光电探测器件不同，SPAD工作在盖革模式下，具有极高的光学增益。这使得SPAD能探测到极微弱的光信号，并在器件内部将光信号转换成电流信号，进而完成光电探测。随着微纳器件领域的不断发展，SPAD的结构及其制作材料也不断推陈出新。若以材料作为划分依据，可将SPAD分为无机-有机基SPAD和无机基SPAD，前者一般是将使用无机材料制作的量子点掺入有机材料中，而后者则以硅基SPAD为代表。由于硅基SPAD出现时间早、集成度高，目前已成为最常用的SPAD器件。
传统的单光子雪崩光电二极管一般由PN结形成的耗尽区来感应光子。由于PN在器件内部的深度是固定的，所以大多数SPAD只对某一特定波长的光子具有波峰响应。实现双波峰SPAD一般有两种方法。一是利用平面结和侧边结来感光，如图1所示，其中平面结工作在盖革模式，侧边结工作在线性模式，并且两个结的深度相差不大，所以并不会形成两个峰位相距较远的波峰。二是通过两个堆叠的平面结来形成双波峰SPAD，如图2所示，但是在设计此类结构时，需要同时考虑到保护环的设计、目标区域电位的施加以及两个结之间击穿电压的差值等因素。以上这些需要考虑的问题使得堆叠结双波峰SPAD的实现过程变得复杂。
发明内容
为了解决上述技术问题，本发明提供一种结构简单的光栅-结型复合雪崩单光子检测器，并提供其制作方法。
本发明解决上述技术问题的技术方案是：一种光栅-结型复合雪崩单光子检测器，包括P型衬底；
P型衬底上设有N型埋层；
所述N型埋层上设有圆形高压N阱、环形P型外延层、环形高压N阱，且圆形高压N阱、环形P型外延层、环形高压N阱从内向外依次相接分布；
所述环形高压N阱中设有环形N+注入区，环形N+注入区外侧设有第一浅槽隔离环；
所述环形P型外延层中设有第二浅槽隔离环；
所述圆形高压N阱中设有低压P阱，低压P阱表面中心设有P+注入区，P+注入区外侧设有环形多晶硅栅；
所述环形N+注入区引出作为器件的阴极，P+注入区引出作为器件的阳极；所述环形多晶硅栅引出作为器件的栅极。
上述光栅-结型复合雪崩单光子检测器，所述第一浅槽隔离环外侧与环形高压N阱外侧边缘相接触，第一浅槽隔离环内侧与环形N+注入区外侧相接触，环形N+注入区内侧与环形高压N阱内侧边缘相接触。
上述光栅-结型复合雪崩单光子检测器，所述圆形高压N阱与低压P阱构成同心圆并与环形P型外延层内侧边缘接触，且低压P阱直径大于圆形高压N阱直径。
上述光栅-结型复合雪崩单光子检测器，所述第二浅槽隔离环外侧与环形N+注入区内侧相接触，第二浅槽隔离环内侧与低压P阱外侧、环形多晶硅栅外侧相接触，环形多晶硅栅内侧与P+注入区外侧相接触。
上述光栅-结型复合雪崩单光子检测器，所述P+注入区与第一金属层相连，第一金属层与第二金属层相连，通过第二金属层引出作为器件的阳极，所述环形多晶硅栅与第三金属层相连，第三金属层与第四金属层连接，通过第四金属层引出作为器件的栅极，所述环形N+注入区与第五金属层连接，第五金属层与第六金属层连接，通过第六金属层引出作为器件的阴极。
上述光栅-结型复合雪崩单光子检测器，器件阴极施加高电位，器件阳极接地，使圆形高压N阱与低压P阱构成的P-Well/WN结工作在反向偏置状态下形成深层耗尽区；环形多晶硅栅施加次高电位，利用光栅的多晶硅栅-氧化物-半导体结构在器件半导体表面以下形成浅层耗尽区。
一种光栅-结型复合雪崩单光子检测器的制作方法，包括以下步骤：
步骤一：第一次光刻，在所述P型衬底上制作N型埋层；
步骤二：第二次光刻，在N型埋层上制作圆形高压N阱、环形高压N阱，环形高压N阱和圆形高压N阱之间用环形P型外延层分隔开；
步骤三：第三次光刻，在圆形高压N阱及两侧的P型外延层中制作低压P阱；
步骤四：第四次光刻，在低压P阱中制作P+注入区，并在P+注入区外侧设置环形多晶硅栅；
步骤五：第五次光刻，在环形高压N阱中制作N+注入区；
步骤六：在N+注入区外侧形成第一浅槽隔离环；
步骤七：在N+注入区和环形多晶硅栅之间形成第二浅槽隔离环；
步骤八：从环形N+注入区引出作为器件的阴极，从P+注入区引出作为器件的阳极，从环形多晶硅栅引出作为器件的栅极。
本发明的有益效果在于：
1、本发明利用两种不同的物理机制形成耗尽区，来对不同波长的光子进行波峰响应。第一个峰位处的波峰响应通过光栅结构形成的耗尽区来实现，第二个峰位处的波峰响应通过P-Well/WN结来实现，并且两个耗尽区的深度不同，从而实现双波峰探测。
2、对于峰位相隔过近的问题，本发明器件的浅耗尽区位于表面附近，深耗尽区位于器件内部，较于平面结和侧边结之间的距离，本器件中深浅耗尽区的距离更大。
3、保护环的设计和指定区域电位的施加是两个相互影响的设计因素。而在本发明的器件中，通过采用光栅结构，从而省略双PN结结构中浅结保护环的施加，电位也可以顺利施加到栅极上，形成耗尽区。
附图说明
图1为利用平面结和侧面结进行双波峰探测的SPAD剖面图。
图2为利用堆叠结进行双波峰探测的SPAD剖面图。
图3为本发明实施例中光栅-结型复合雪崩单光子检测器的剖面图和电路连接图。
图4为本发明实施例中光栅-结型复合雪崩单光子检测器的工作原理图。
图5为本发明实施例中光栅-结型复合雪崩单光子检测器的俯视图。
具体实施方式
下面结合附图和实施例对本发明作进一步的说明。
如图3-图5所示，一种光栅-结型复合雪崩单光子检测器，包括P型衬底P-Sub101；P型衬底P-Sub101上设有N型埋层NBL102；所述N型埋层NBL102上设有圆形高压N阱WN103、环形P型外延层P-EPI105、环形高压N阱WN104，且圆形高压N阱WN103、环形P型外延层P-EPI105、环形高压N阱WN104从内向外依次相接分布；所述环形高压N阱WN104中设有环形N+注入区108，环形N+注入区108外侧设有第一浅槽隔离环202；所述环形P型外延层P-EPI105中设有第二浅槽隔离环203；所述圆形高压N阱WN103中设有低压P阱P-Well106，低压P阱P-Well106表面中心设有P+注入区107，P+注入区107外侧设有环形多晶硅栅201；所述环形N+注入区108引出作为器件的阴极，P+注入区107引出作为器件的阳极；所述环形多晶硅栅201引出作为器件的栅极。
所述第一浅槽隔离环202外侧与环形高压N阱WN104外侧边缘相接触，第一浅槽隔离环202内侧与环形N+注入区108外侧相接触，环形N+注入区108内侧与环形高压N阱WN104内侧边缘相接触。
所述圆形高压N阱WN103与低压P阱P-Well106构成同心圆并与环形P型外延层P-EPI105内侧边缘接触，且低压P阱P-Well106直径大于圆形高压N阱WN103直径。
所述第二浅槽隔离环203外侧与环形N+注入区108内侧相接触，第二浅槽隔离环203内侧与低压P阱P-Well106外侧、环形多晶硅栅201外侧相接触，环形多晶硅栅201内侧与P+注入区107外侧相接触。
所述P+注入区107与第一金属层204相连，第一金属层204与第二金属层301相连，通过第二金属层301引出作为器件的阳极；所述环形多晶硅栅201与第三金属层302相连，第三金属层302与第四金属层401连接，通过第四金属层401引出作为器件的栅极，所述环形N+注入区108与第五金属层402连接，第五金属层402与第六金属层501相连，通过第六金属层501引出作为器件的阴极。
光栅-结型复合雪崩单光子检测器的工作原理：器件的工作原理图如图4所示，通过给阴极施加高电位，阳极接地，使圆形高压N阱WN103与低压P阱P-Well106构成的P-Well/WN结工作在反向偏置状态下形成深层耗尽区，图4中虚线包围的区域表示深层耗尽区。给环形多晶硅栅201施加次高电位，利用光栅的多晶硅栅-氧化物-半导体结构在器件半导体表面以下形成浅层耗尽区。当光照如图4所示施加到器件上方时，光子在耗尽区内被吸收，并形成大量的光生载流子。由于耗尽区是由不可移动的正/负离子组成，所以光生载流子并不会大量复合掉，而是会在外加电场的作用下移动，并从阳极输出由入射光子转化而来的输出电流；并且由于两个耗尽层在器件内部的深度不同，所以对不同波长的光子会形成两个峰位不同的波峰响应，从而实现双波峰探测。从图4中可以看到，浅层耗尽区和深层耗尽区是相互堆叠的，只是两者在器件内部的深度分布不同。具有不同深度的耗尽区决定着该器件能够对两种不同波长的光子具有波峰响应。通过控制圆形高压N阱WN103、低压P阱P-Well106、环形多晶硅栅201的几何尺寸和栅极、P-Well/WN结的偏置电压可以改变两个耗尽区的宽度，进而改变该器件的光谱响应曲线。
一种光栅-结型复合雪崩单光子检测器的制作方法，包括以下步骤：
步骤一：第一次光刻，在所述P型衬底P-Sub101上制作N型埋层NBL102；
步骤二：第二次光刻，在N型埋层NBL102上制作圆形高压N阱WN103、环形高压N阱WN104，环形高压N阱WN104和圆形高压N阱WN103之间用环形P型外延层P-EPI105分隔开；
步骤三：第三次光刻，在圆形高压N阱WN103及两侧的P型外延层中制作低压P阱P-Well106；
步骤四：第四次光刻，在低压P阱P-Well106中制作P+注入区107，并在P+注入区107外侧设置环形多晶硅栅201；
步骤五：第五次光刻，在环形高压N阱WN104中制作N+注入区；
步骤六：在N+注入区外侧形成第一浅槽隔离环202；
步骤七：在N+注入区和环形多晶硅栅201之间形成第二浅槽隔离环203；
步骤八：从环形N+注入区108引出作为器件的阴极，从P+注入区107引出作为器件的阳极，从环形多晶硅栅201引出作为器件的栅极。
Claims (7)
1.一种光栅-结型复合雪崩单光子检测器，其特征在于：包括P型衬底；
P型衬底上设有N型埋层；
所述N型埋层上设有圆形高压N阱、环形P型外延层、环形高压N阱，且圆形高压N阱、环形P型外延层、环形高压N阱从内向外依次相接分布；
所述环形高压N阱中设有环形N+注入区，环形N+注入区外侧设有第一浅槽隔离环；
所述环形P型外延层中设有第二浅槽隔离环；
所述圆形高压N阱中设有低压P阱，低压P阱表面中心设有P+注入区，P+注入区外侧设有环形多晶硅栅；
所述环形N+注入区引出作为器件的阴极，P+注入区引出作为器件的阳极；所述环形多晶硅栅引出作为器件的栅极。
2.根据权利要求1所述的光栅-结型复合雪崩单光子检测器，其特征在于：所述第一浅槽隔离环外侧与环形高压N阱外侧边缘相接触，第一浅槽隔离环内侧与环形N+注入区外侧相接触，环形N+注入区内侧与环形高压N阱内侧边缘相接触。
3.根据权利要求1所述的光栅-结型复合雪崩单光子检测器，其特征在于：所述圆形高压N阱与低压P阱构成同心圆并与环形P型外延层内侧边缘接触，且低压P阱直径大于圆形高压N阱直径。
4.根据权利要求3所述的光栅-结型复合雪崩单光子检测器，其特征在于：所述第二浅槽隔离环外侧与环形N+注入区内侧相接触，第二浅槽隔离环内侧与低压P阱外侧、环形多晶硅栅外侧相接触，环形多晶硅栅内侧与P+注入区外侧相接触。
5.根据权利要求1所述的光栅-结型复合雪崩单光子检测器，其特征在于：所述P+注入区与第一金属层相连，第一金属层与第二金属层相连，通过第二金属层引出作为器件的阳极，所述环形多晶硅栅与第三金属层相连，第三金属层与第四金属层连接，通过第四金属层引出作为器件的栅极，所述环形N+注入区与第五金属层连接，第五金属层与第六金属层连接，通过第六金属层引出作为器件的阴极。
6.根据权利要求5所述的光栅-结型复合雪崩单光子检测器，其特征在于：器件阴极施加高电位，器件阳极接地，使圆形高压N阱与低压P阱构成的P-Well/WN结工作在反向偏置状态下形成深层耗尽区；环形多晶硅栅施加次高电位，利用光栅的多晶硅栅-氧化物-半导体结构在器件半导体表面以下形成浅层耗尽区。
7.一种根据权利要求1-6中任一项所述的光栅-结型复合雪崩单光子检测器的制作方法，其特征在于，包括以下步骤：
步骤一：第一次光刻，在所述P型衬底上制作N型埋层；
步骤二：第二次光刻，在N型埋层上制作圆形高压N阱、环形高压N阱，环形高压N阱和圆形高压N阱之间用环形P型外延层分隔开；
步骤三：第三次光刻，在圆形高压N阱及两侧的P型外延层中制作低压P阱；
步骤四：第四次光刻，在低压P阱中制作P+注入区，并在P+注入区外侧设置环形多晶硅栅；
步骤五：第五次光刻，在环形高压N阱中制作N+注入区；
步骤六：在N+注入区外侧形成第一浅槽隔离环；
步骤七：在N+注入区和环形多晶硅栅之间形成第二浅槽隔离环；
步骤八：从环形N+注入区引出作为器件的阴极，从P+注入区引出作为器件的阳极，从环形多晶硅栅引出作为器件的栅极。
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