JP6847795B2 - 光検出器、光検出装置、ライダー装置及び光検出器の製造方法 - Google Patents
光検出器、光検出装置、ライダー装置及び光検出器の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 69
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- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000000926 separation method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 238000001308 synthesis method Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/145—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4868—Controlling received signal intensity or exposure of sensor
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- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
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- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Optical Distance (AREA)
Description
図1は、第1の実施形態の光検出器を光の入射方向から見た図である。
第1の実施形態に係る光検出器の変形例を図5に示す。
第1の実施形態と異なる点を説明する。
図7は第3の実施形態に係るライダー装置5001を示す図である。
Claims (16)
- 入射した光を電荷に変換する、少なくとも一つの第1セルと、
入射した光を電荷に変換する、少なくとも一つの第2セルと、を具備し、
前記第1セルは、第1半導体層と、第2半導体層と、前記第1半導体層を前記第2半導体層と挟む第1基板と、を含み、
前記第2セルは、第3半導体層と、第4半導体層と、前記第3半導体層を前記第4半導体層と挟む第2基板と、を含み、
前記第2基板が、前記第1基板の厚さよりも厚く、
前記第1セルは、入射する光量が所定の光量よりも多い場合において第1感度に光検出し、
前記第2セルは、入射する光量が所定の光量よりも少ない場合において第2感度に光検出する光検出器。 - 入射した光を電荷に変換する、少なくとも一つの第1セルと、
入射した光を電荷に変換する、少なくとも一つの第2セルと、を具備し、
前記第1セルは、第1半導体層と、第2半導体層と、前記第1半導体層を前記第2半導体層と挟む第1基板と、を含み、
前記第2セルは、第3半導体層と、第4半導体層と、前記第3半導体層を前記第4半導体層と挟む第2基板と、を含み、
前記第2基板が、前記第1基板の厚さよりも厚く、
前記第1セルと前記第2セルは、アバランシェフォトダイオードである光検出器。 - 前記第1セルと前記第2セルは、ガイガーモード動作する請求項2に記載の光検出器。
- 前記第1セルと前記第2セルのそれぞれに直列に接続された抵抗を具備する請求項2又は3に記載の光検出器。
- 前記第1基板は、空乏化された空乏層を含み、
前記第2基板は、前記空乏層と、空乏化されない領域である非空乏層と、を含む請求項1から4のいずれか1項に記載の光検出器。 - 前記第1基板を前記第1半導体層と挟み、前記第2基板を前記第3半導体層と挟む可視光カット層と、
前記可視光カット層を前記第1基板及び前記第2基板と挟む裏面電極と、を具備する請求項1から5のいずれか1項に記載の光検出器。 - 前記検出器に、前記第1基板及び前記第2基板に対して前記第2半導体層及び前記第4半導体層側から光が入射する場合、前記裏面電極の材料は、アルミもしくはアルミ含有材料、またはその材料と組み合わせた他の金属材料が用いられる請求項6に記載の光検出器。
- 前記検出器に、前記第1基板及び前記第2基板に対して前記裏面電極側から光が入射する場合、前記裏面電極の材料は、酸化インジウムスズが用いられる請求項6に記載の光検出器。
- 前記第1基板と前記第2基板が同一の基板である請求項1から8のいずれか1項に記載の光検出器。
- 前記第1基板の厚さは、10から30μmの間である請求項1から9のいずれか1項に記載の光検出器。
- 前記第2基板の厚さは、3μm以下である請求項1から10のいずれか1項に記載の光検出器。
- 前記光は、近赤外光である請求項1から11のいずれか1項に記載の光検出器。
- 請求項1から12のいずれか1項に記載の光検出器と、
前記第1セルからの電気信号から距離情報を算出する第1処理部と、
前記第2セルからの電気信号から距離情報を算出する第2処理部と、
前記第1処理部と前記第2処理部で算出した距離情報を選別する距離情報選別部と、を具備する光検出装置。 - 物体に光を照射する光源と、
前記物体に反射された光を検出する請求項1から12のいずれか1項に記載の光検出器と、
を備えるライダー装置。 - 基板に所定の深さでイオン注入して第1半導体層及び第3半導体層を形成し、
前記第1半導体層の上方にイオン注入して第2半導体層を形成し、前記第3半導体層の上方にイオン注入して第4半導体層を形成することで、前記第1半導体層と前記第2半導体層との間及び前記第3半導体層と前記第4半導体層との間にそれぞれpn接合を形成させ、
前記基板の裏面を反応性イオンエッチングによって、段差を形成し、
前記裏面において、ボロンを高濃度でイオン注入した後、熱処理を行って可視光カット層を形成し、
前記可視光カット層の裏面において、化学蒸着によって裏面電極を形成する光検出器の製造方法。
- 前記反応性イオンエッチングは、前記基板の厚さと空乏層の厚さを考慮して実行する請求項15に記載の光検出器の製造方法。
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US15/907,899 US11189746B2 (en) | 2017-09-20 | 2018-02-28 | Photodetector comprising dual cells with different thickness of interposing substrates, photodetection device, laser imaging detection and ranging apparatus and method of manufacturing a photodetector |
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