WO2017064882A1 - 測距装置 - Google Patents
測距装置 Download PDFInfo
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- WO2017064882A1 WO2017064882A1 PCT/JP2016/068398 JP2016068398W WO2017064882A1 WO 2017064882 A1 WO2017064882 A1 WO 2017064882A1 JP 2016068398 W JP2016068398 W JP 2016068398W WO 2017064882 A1 WO2017064882 A1 WO 2017064882A1
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- Prior art keywords
- light
- measuring device
- distance measuring
- wavelength
- projection beam
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- 230000035945 sensitivity Effects 0.000 claims abstract description 15
- 230000003595 spectral effect Effects 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 26
- 238000001514 detection method Methods 0.000 description 24
- 238000005259 measurement Methods 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 210000001525 retina Anatomy 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/42—Simultaneous measurement of distance and other co-ordinates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
- G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
Definitions
- the present invention relates to a distance measuring device.
- a distance measuring device is assumed to be mounted as an automatic driving support system in a vehicle such as an automobile.
- the distance between a running vehicle and an object is measured by a distance measuring device, and the vehicle speed is controlled based on the measurement result, thereby avoiding a collision between the vehicle and the object. Is expected.
- the radar apparatus includes a light source, pixels, and a light detection control unit.
- SPAD Single-Photon-Avalanche-Diode
- the light detection unit is configured to eliminate the influence of the scattered light by operating the SPAD after the timing at which the scattered light inside the apparatus by the light emitted from the light source enters the SPAD.
- a SPAD having a higher light receiving sensitivity than a general PD (Photo Diode) or APD (Avalanche Photo Diode) is used as a light receiving element.
- a general PD Photo Diode
- APD Anavalanche Photo Diode
- the vehicle-mounted distance measuring device it is necessary to consider that the light projection beam and the return light propagate through the external space. For example, since the light projection beam and the return light propagate in a space where pedestrians and the like travel, it is necessary to devise a technique for reducing the influence of the light projection beam and the return light on the human body. Furthermore, in order to maintain the distance measurement distance and the distance measurement accuracy even in rainy weather, it is necessary to study the light absorption characteristics of the light projection beam and the return light with respect to water.
- the present invention has been made to solve the above problems, and an object of the present invention is to provide a distance measuring device that can improve the distance measurement distance and the distance measurement accuracy and is suitable for in-vehicle use.
- a distance measuring device is a distance measuring device that measures a distance to an object, and detects a light source that emits a light projection beam to the object and a return light of the light projection beam reflected by the object.
- a light source is a laser light source that emits ultraviolet to blue pulsed light as a projection beam, and the light receiving element has spectral sensitivity in the ultraviolet to blue region and is in Geiger mode.
- An avalanche photodiode that operates.
- the energy of disturbance light such as sunlight tends to be larger on the longer wavelength side than the blue region and smaller on the shorter wavelength side than the blue region in the visible light region. Therefore, by using a light receiving element having spectral sensitivity in the ultraviolet region to blue region, it is possible to reduce the influence of disturbance light when detecting return light from an object. By reducing the influence of ambient light and detecting the return light with an avalanche photodiode operating in Geiger mode, it is possible to secure a sufficient signal-to-noise ratio and improve the distance that can be measured and the accuracy of distance measurement. It is done.
- light in the ultraviolet to blue range has a smaller absorption coefficient for water than visible light in the longer wavelength range than the blue range, and the maximum allowable exposure for the human retina is visible in the longer wavelength range than the blue range. Larger than light in the light range. Therefore, by using a laser light source that emits pulsed light in the ultraviolet region to blue region, it is possible to suppress the influence on the human body and the deterioration of the ranging performance such as in rainy weather.
- the light source may be a laser light source that emits pulsed light of 300 nm to 400 nm as a projection beam. By using light in this wavelength region as a light source, it is possible to optimize each condition of the absorption coefficient for water and the maximum allowable exposure amount for the human retina.
- the light receiving element may be a silicon photomultiplier tube.
- the silicon photomultiplier tube has an excellent spectral sensitivity in the ultraviolet region to the blue region and suitably functions as an avalanche photodiode operating in Geiger mode.
- This distance measuring device can improve the distance that can be measured and the distance measurement accuracy, and is suitable for in-vehicle use.
- FIG. 3 is a sectional view taken along line III-III in FIG. 2. It is a graph which shows the spectral sensitivity characteristic of MPPC. It is a graph which shows the influence of disturbance light. It is a graph which shows the maximum permissible exposure amount of the retina of a human body. It is a graph which shows the light absorption characteristic with respect to water. It is a figure which shows the suitable wavelength range used with a distance measuring device.
- FIG. 1 is a perspective view showing an embodiment of a distance measuring device.
- the distance measuring device 1 is a device mounted as an automatic driving support system in a vehicle such as an automobile.
- the distance between the running vehicle and the object K is measured in real time by the distance measuring device 1, and the vehicle speed and the like are controlled based on the measurement result, thereby avoiding the collision between the vehicle and the object K.
- Control is executed.
- the object K is, for example, another vehicle, an obstacle such as a wall, or a pedestrian. In the present embodiment, for example, it is assumed that the distance from the object K located at a position about 0.1 m to 100 m away is measured.
- the distance measuring device 1 includes a light source 11, a collimator 12, an aperture 13, a beam splitter 14, a scanning mirror 15, a wavelength selection filter 16, a condensing lens 17, and a light receiving element 18. It is comprised including. These components are assembled on a substantially plate-like stage, for example.
- the light source 11 is a portion that emits a light projection beam L1 to the object K.
- a laser diode that emits pulsed light in the ultraviolet region to the blue region is used.
- the wavelength of the projection beam L1 is, for example, 300 nm to 500 nm, preferably 300 nm to 400 nm, and more preferably 350 nm to 400 nm.
- the projection beam L1 emitted from the light source 11 is collimated by the collimator 12 and guided to the beam splitter 14 in a state of being narrowed to a beam diameter of, for example, ⁇ 10 mm or less by the aperture 13.
- the projection beam L1 that has passed through the beam splitter 14 is guided to the scanning mirror 15.
- the scanning mirror 15 is, for example, a MEMS (Micro Electro Mechanical Systems) mirror.
- the scanning mirror 15 swings in the in-plane direction of the stage 9 based on control by a control unit (not shown), and scans the direction of the light projection beam L1 toward the object K.
- the diameter of the mirror portion of the scanning mirror 15 is, for example, about the same as the diameter of the projection beam L1.
- the swing angle of the scanning mirror 15 is, for example, about ⁇ 30 °.
- the scanning speed of the scanning mirror 15 is, for example, about 0.1 kHz to 10 kHz.
- the scanning mirror 15 reflects the return light L2 reflected by the projection beam L1 by the object K toward the beam splitter 14.
- the return light L ⁇ b> 2 reflected by the beam splitter 14 passes through the wavelength selection filter 16 and is then collected on the light receiving surface of the light receiving element 18 by the condenser lens 17.
- the wavelength selection filter 16 is a band-pass filter that transmits light having a wavelength corresponding to the spectral sensitivity characteristic of the light receiving element 18.
- the wavelength selection filter 16 transmits light having a wavelength of 300 nm to 500 nm, while cutting light of other wavelength bands.
- the transmission band of the wavelength selection filter 16 may be appropriately set according to the wavelength of light emitted from the light source 11.
- the light receiving element 18 is a part that detects the return light L2 from the object K.
- an avalanche photodiode operating in Geiger mode is used.
- the Geiger mode is a mode in which the reverse voltage of the avalanche photodiode is set to be higher than the breakdown voltage. In a high electric field of Geiger mode, a discharge phenomenon (Geiger discharge) occurs even when weak light is incident, and an electron multiplication factor is about 105 to 106.
- avalanche photodiodes operating in Geiger mode examples include SPAD (Single-Photon Avalanche Diode) and MPPC (Multi-Pixel Photon Counter / silicon photomultiplier tube).
- SPAD Single-Photon Avalanche Diode
- MPPC Multi-Pixel Photon Counter / silicon photomultiplier tube.
- each pixel of an avalanche photodiode operating in Geiger mode is connected in two dimensions in parallel.
- a quenching resistor is connected to each pixel, and each quenching resistor is connected to one readout channel. Therefore, the number of photons detected by the MPPC can be detected by measuring the height (number of events) or the amount of charge of the pulse on which the signals from each pixel are superimposed.
- the output signal from the light receiving element 18 is output to a calculation unit (not shown).
- the distance to the object K is calculated based on the TOF (Time of Flight) method.
- the calculation unit calculates the distance to the object K based on the difference between the time when the pulse of the light projection beam L1 is emitted from the light source 11 and the time when the return light L2 is detected by the light receiving element 18.
- FIG. 2 is a perspective view showing an example of the configuration of the light receiving element.
- 3 is a cross-sectional view taken along line III-III in FIG. 2 and 3 exemplify the configuration of MPPC.
- the insulating layer 37 shown in FIG. 3 is omitted for convenience of explanation.
- the MPPC that is the light receiving element 18 has a light receiving region on one surface side of a semiconductor substrate made of Si.
- the light receiving region includes a plurality of light detection units 30 that are two-dimensionally arranged in a matrix, for example.
- a signal reading wiring pattern 23C patterned in a lattice shape is arranged on the substrate surface side.
- a light detection region is defined in the opening of the grid-like wiring pattern 23C.
- the light detection unit 30 disposed in the light detection region is connected to the wiring pattern 23C.
- a bottom electrode 40 is provided on the back side of the substrate.
- the p-type semiconductor region constituting this constitutes an anode
- the n-type semiconductor region constitutes a cathode.
- a forward bias voltage is when a drive voltage is applied to the photodiode so that the potential of the p-type semiconductor region is higher than the potential of the n-type semiconductor region.
- the reverse bias voltage is when a reverse drive voltage is applied to the photodiode.
- the drive voltage is a reverse bias voltage applied to a photodiode formed by an internal pn junction in the light detection unit 30.
- this drive voltage is set to be higher than the breakdown voltage of the photodiode, the avalanche breakdown occurs in the photodiode, and the photodiode operates in the Geiger mode. Even when a forward bias voltage is applied to the photodiode, the photodetection function of the photodiode is exhibited.
- a resistance portion (quenching resistor) 24 electrically connected to one end of the photodiode is disposed.
- One end of the resistance portion 24 constitutes a contact electrode 24A that is electrically connected to one end of the photodiode via a contact electrode made of another material located immediately below the resistance portion 24.
- the other end of the resistance portion 24 is in contact with the signal reading wiring pattern 23C and constitutes a contact electrode 24C electrically connected thereto. That is, the resistance part 24 in each light detection part 30 is connected to the contact electrode 24A connected to the photodiode, the resistance layer 24B extending in a curved line continuously to the contact electrode 24A, and the terminal part of the resistance layer 24B.
- a contact electrode 24C is provided. Note that the contact electrode 24A, the resistance layer 24B, and the contact electrode 24C are formed of a resistance layer of the same resistance material.
- one end of the photodiode included in the photodetecting section 30 is connected to the wiring pattern 23C having the same potential at all positions, and the other end is connected to the lower surface electrode 40 for applying the substrate potential. That is, the photodiodes in all the light detection units 30 are connected in parallel.
- each of the light detection units 30 includes an n-type first semiconductor layer 32, a p-type second semiconductor layer 33 that forms a pn junction with the first semiconductor layer 32, and a high impurity concentration region 34.
- the first contact electrode 3 ⁇ / b> A is in contact with the high impurity concentration region 34.
- the high impurity concentration region 34 is a diffusion region formed by diffusing impurities into the second semiconductor layer 33, and has a higher impurity concentration than the second semiconductor layer 33.
- a p-type second semiconductor layer 33 is formed on the n-type first semiconductor layer 32, and a p-type high impurity concentration region 34 is formed on the surface side of the second semiconductor layer 33. Therefore, the pn junction constituting the photodiode is formed between the first semiconductor layer 32 and the second semiconductor layer 33.
- a structure in which the conductivity type is reversed from the above structure can be adopted.
- an n-type second semiconductor layer 33 is formed on the p-type first semiconductor layer 32, and an n-type high impurity concentration region 34 is formed on the surface side of the second semiconductor layer 33.
- the pn junction interface can be formed on the surface layer side.
- the n-type second semiconductor layer 33 is formed on the n-type first semiconductor layer 32, and the p-type high impurity concentration region 34 is formed on the surface side of the second semiconductor layer 33. It becomes a structure.
- the pn junction is formed at the interface between the second semiconductor layer 33 and the high impurity concentration region 34. Even in such a structure, the conductivity type can be reversed.
- Each light detection unit 30 includes an insulating layer 36 formed on the surface of the semiconductor substrate.
- the surfaces of the second semiconductor layer 33 and the high impurity concentration region 34 are covered with an insulating layer 36.
- the insulating layer 36 has a contact hole, and a contact electrode 23A is formed in the contact hole.
- An upper insulating layer 37 is formed on the insulating layer 36 and the contact electrode 23A.
- the insulating layer 37 has a contact hole arranged coaxially with the contact electrode 23A, and the contact electrode 24A is formed in the contact hole.
- FIG. 4 is a graph showing the spectral sensitivity characteristics of the MPPC described above.
- the horizontal axis represents wavelength
- the vertical axis represents photon detection efficiency.
- this spectral sensitivity characteristic is obtained when an MPPC having 400 photodetecting units and an array pitch of photodetecting units of 25 ⁇ m is operated in a Geiger mode with a reverse bias voltage of 74V.
- the breakdown voltage of this MPPC is 71V.
- the detection efficiency of photons in MPPC has a peak around a wavelength of 450 nm.
- the photon detection efficiency at the peak wavelength is about 38%.
- the detection efficiency of photons in MPPC is about 22% to about 38% in the wavelength range of 300 nm to 500 nm, about 22% to 35% in the wavelength range of 300 nm to 400 nm, and about 29% to 35% in the wavelength range of 350 nm to 400 nm. It has become.
- the photon detection efficiency in MPPC is about 28% at a wavelength of 600 nm, about 17% at a wavelength of 700 nm, and about 9% at a wavelength of 800 nm, and gradually decreases on the longer wavelength side than the blue region. Therefore, the above-described MPPC is a light receiving element having high spectral sensitivity in the ultraviolet region to blue region.
- the reason why MPPC has high spectral sensitivity in the ultraviolet to blue range is that the absorption length of the short wavelength light incident on the light receiving surface of the MPPC matches the position of the avalanche layer, and electrons with a high ionization rate are in the avalanche layer. There is a point that the structure is injected into. In addition, since a high electric field in Geiger mode is applied, there is a high probability that charges are accelerated by the electric field before being absorbed by the semiconductor layer.
- the distance measuring apparatus 1 uses the avalanche photodiode operating in the Geiger mode as the light receiving element 18.
- the light receiving element 18 has a higher light receiving sensitivity than a general PD (Photo Diode) or APD (Avalanche Photo Diode), but is easily affected by disturbance light such as sunlight.
- FIG. 5 is a graph showing the influence of ambient light.
- sunlight is illustrated as a main factor of disturbance light
- the horizontal axis is the wavelength
- the vertical axis is the daytime solar energy near the ground surface.
- the energy of sunlight has a peak around a wavelength of 500 nm.
- the energy of sunlight decreases as the distance from the peak wavelength increases, but the rate of decrease is much greater on the short wavelength side than on the long wavelength side.
- the energy of disturbance light tends to be larger on the longer wavelength side than the blue region and smaller on the shorter wavelength side than the blue region in the visible light region. Therefore, by using the light receiving element 18 having spectral sensitivity in the ultraviolet region to the blue region, it is possible to reduce the influence of disturbance light when detecting the return light L2 from the object K. By reducing the influence of ambient light and detecting the return light with an avalanche photodiode operating in Geiger mode, it is possible to secure a sufficient signal-to-noise ratio and improve the distance that can be measured and the accuracy of distance measurement. It is done.
- the signal S / N ratio can be sufficiently secured. Therefore, the power consumption of the distance measuring device 1 can be reduced.
- FIG. 6 is a graph showing the maximum allowable exposure amount of the human retina.
- the horizontal axis represents wavelength
- the vertical axis represents the maximum allowable exposure amount (Maximum Permissible Exposure: MPE) of the retina.
- MPE Maximum Permissible Exposure
- the maximum allowable exposure amount of 10 ns is indicated by a solid line
- the maximum allowable exposure amount of 1 s is indicated by a broken line.
- the maximum allowable exposure amount of 10 ns is the maximum allowable exposure amount when the incident time of one pulse of laser light is 10 ns
- the maximum allowable exposure amount of 1 s is the incident time of one pulse of laser light is 1 s. This is the maximum allowable exposure in some cases.
- the maximum allowable exposure amount is defined as a laser light intensity of 1/10, which is a level at which a failure occurrence rate due to laser radiation becomes 50% in the standardization of laser safety (JIS C 6802).
- the near infrared region MPE is higher than the visible light region MPE.
- MPE of 10ns in the visible light region is a order of 0.01J / cm 2 ⁇ 0.1J / cm 2
- MPE of 10ns in the visible light region and the order of 100J / cm 2 ⁇ 10000J / cm 2 It has become.
- the MPE of 1s in the above band of wavelengths 1400 nm has become the order of 10J / cm 2 ⁇ 10000J / cm 2
- MPE of 1s in the same band is almost the order of 10000 J / cm 2 .
- the ultraviolet MPE is higher than the visible light MPE.
- MPE of 10ns in the following band wavelength 400nm is a order of 10J / cm 2 ⁇ 100J / cm 2
- MPE of 1s in the same band has become the order of 10J / cm 2 ⁇ 10000J / cm 2 .
- the projection beam L1 and the return light L2 propagate through the external space from the distance measuring device 1 to the object K. Since this external space is a space where pedestrians and the like come and go, it is conceivable that the projection beam L1 and the return light L2 are irradiated on the human body. Therefore, safety (eye-safety) for the retina of the human body can be realized by selecting the wavelengths of the projection beam L1 and the return light L2 and ensuring the maximum allowable exposure amount.
- FIG. 7 is a graph showing the light absorption characteristics with respect to water.
- the horizontal axis represents the wavelength and the vertical axis represents the absorption coefficient.
- the absorption coefficient with respect to water is the smallest around a wavelength of 400 nm and is 10 ⁇ 4 cm ⁇ 1 or less. Even in the vicinity of the wavelength of 400 nm, the absorption coefficient with respect to water is lower than in other wavelength ranges, and in the range of the wavelength of 300 nm to 500 nm, it is 10 ⁇ 4 cm ⁇ 1 or less.
- the projection beam L1 and the return light L2 propagate through the external space from the distance measuring device 1 to the object K.
- the light projection beam L1 and the return light L2 propagate through the external space, it is conceivable that the light projection beam L1 and the return light L2 pass through raindrops, fog, or the like depending on the weather. Therefore, by selecting the wavelengths of the projection beam L1 and the return light L2 so as to reduce the influence of absorption on water, it is possible to ensure the distance that can be measured and the distance measurement accuracy regardless of the weather.
- the distance measuring apparatus 1 uses the laser light source that emits the pulsed light in the ultraviolet region to the blue region as the projection beam L1 as the light source, has spectral sensitivity in the ultraviolet region to the blue region, and uses Geiger mode.
- An operating avalanche photodiode is used as the light receiving element 18.
- the distance measuring device 1 improves the distance measurement distance and the distance measurement accuracy by eliminating the influence of ambient light, realizes eye-safe, and changes in the distance measurement distance and the distance measurement accuracy by eliminating the influence of water absorption. Can be suppressed.
- FIG. 8 is a diagram showing a preferred wavelength range used in the distance measuring apparatus.
- a wavelength range suitable for reducing the influence of disturbance light is 300 nm to 400 nm.
- the detection efficiency of photons in MPPC is about 22% to 35% in the wavelength range of 300 nm to 400 nm, and has sufficient detection efficiency in this range.
- the wavelength range suitable for realizing the eye safe is 300 nm to 400 nm.
- the wavelength range suitable for reducing the influence of water absorption is 300 nm to 400 nm.
- the wavelength of the laser light emitted from the laser diode has temperature dependency.
- the temperature dependence of the wavelength of the laser diode in the ultraviolet region is about an order of magnitude smaller than the temperature dependence of the wavelength of the laser diode in the near infrared region, for example, 0.03 nm / ° C. to 0.04 nm / ° C. Therefore, even if the temperature range of the environment in which the in-vehicle distance measuring device 1 is used is assumed to be ⁇ 40 ° C. to 105 ° C., the wavelength fluctuation amount is several nm or less, and the influence of the wavelength temperature dependency is extremely high. small.
- the detection efficiency of photons in MPPC has a peak in the vicinity of a wavelength of 450 nm.
- the peak wavelength of the MPPC detection efficiency is longer than the wavelength of the laser light. Therefore, even when the temperature of the environment in which the distance measuring device 1 is used is shifted to a high temperature side, the MPPC detection efficiency is increased, and the distance measurement possible distance and the distance measurement accuracy can be sufficiently secured.
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Abstract
Description
Claims (3)
- 物体までの距離を計測する測距装置であって、
前記物体への投光ビームを出射する光源と、
前記物体で反射した前記投光ビームの戻り光を検出する受光素子と、を備え、
前記光源は、紫外域~青色域のパルス光を前記投光ビームとして出射するレーザ光源であり、
前記受光素子は、紫外域~青色域に分光感度を有すると共に、ガイガーモードで動作するアバランシェフォトダイオードである測距装置。 - 前記光源は、300nm~400nmのパルス光を前記投光ビームとして出射するレーザ光源である請求項1記載の測距装置。
- 前記受光素子は、シリコン光電子増倍管である請求項1又は2記載の測距装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112016004726.6T DE112016004726T5 (de) | 2015-10-16 | 2016-06-21 | Distanzmessvorrichtung |
CH00417/18A CH713186B1 (de) | 2015-10-16 | 2016-06-21 | Distanzmessvorrichtung. |
US15/749,516 US20180210069A1 (en) | 2015-10-16 | 2016-06-21 | Distance measuring device |
KR1020187001512A KR20180072657A (ko) | 2015-10-16 | 2016-06-21 | 측거 장치 |
CN201680060013.5A CN108139468A (zh) | 2015-10-16 | 2016-06-21 | 测距装置 |
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JP2015204658A JP2017075906A (ja) | 2015-10-16 | 2015-10-16 | 測距装置 |
JP2015-204658 | 2015-10-16 |
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WO2017064882A1 true WO2017064882A1 (ja) | 2017-04-20 |
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JP (1) | JP2017075906A (ja) |
KR (1) | KR20180072657A (ja) |
CN (1) | CN108139468A (ja) |
CH (1) | CH713186B1 (ja) |
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DE102018113711A1 (de) * | 2018-06-08 | 2019-12-12 | Osram Opto Semiconductors Gmbh | Apparat und scheinwerfer |
JP7178819B2 (ja) | 2018-07-18 | 2022-11-28 | 浜松ホトニクス株式会社 | 半導体光検出装置 |
EP3614172B1 (de) * | 2018-08-23 | 2021-09-22 | Ibeo Automotive Systems GmbH | Verfahren und vorrichtung zur optischen distanzmessung |
JP7098559B2 (ja) | 2019-03-14 | 2022-07-11 | 株式会社東芝 | 光検出器及びライダー装置 |
JP2021012034A (ja) * | 2019-07-03 | 2021-02-04 | 株式会社東芝 | 電子装置、受光装置、投光装置、及び距離計測方法 |
JP7362352B2 (ja) * | 2019-08-23 | 2023-10-17 | キヤノン株式会社 | 光電変換装置、光電変換システム、および移動体 |
CN112771403B (zh) | 2019-09-04 | 2024-02-27 | 深圳市速腾聚创科技有限公司 | 激光雷达 |
KR102240887B1 (ko) * | 2019-11-13 | 2021-04-15 | 엘브이아이테크놀러지(주) | 라이다 시스템 |
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2016
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- 2016-06-21 DE DE112016004726.6T patent/DE112016004726T5/de not_active Withdrawn
- 2016-06-21 WO PCT/JP2016/068398 patent/WO2017064882A1/ja active Application Filing
- 2016-06-21 US US15/749,516 patent/US20180210069A1/en not_active Abandoned
- 2016-06-21 CN CN201680060013.5A patent/CN108139468A/zh active Pending
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DE112016004726T5 (de) | 2018-07-19 |
CH713186B1 (de) | 2018-09-14 |
KR20180072657A (ko) | 2018-06-29 |
US20180210069A1 (en) | 2018-07-26 |
JP2017075906A (ja) | 2017-04-20 |
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