CN109906517B - 光学隔离系统和电路以及具有延伸横向p-n结的光子检测器 - Google Patents

光学隔离系统和电路以及具有延伸横向p-n结的光子检测器 Download PDF

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CN109906517B
CN109906517B CN201780066981.1A CN201780066981A CN109906517B CN 109906517 B CN109906517 B CN 109906517B CN 201780066981 A CN201780066981 A CN 201780066981A CN 109906517 B CN109906517 B CN 109906517B
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junction
circuit
optical
sensor
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CN109906517A (zh
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B·J·马莱
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
    • H04B10/802—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections for isolation, e.g. using optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/293—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
CN201780066981.1A 2016-12-30 2017-12-29 光学隔离系统和电路以及具有延伸横向p-n结的光子检测器 Active CN109906517B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/395,584 US10074639B2 (en) 2016-12-30 2016-12-30 Isolator integrated circuits with package structure cavity and fabrication methods
US15/395,584 2016-12-30
US15/612,327 2017-06-02
US15/612,327 US10411150B2 (en) 2016-12-30 2017-06-02 Optical isolation systems and circuits and photon detectors with extended lateral P-N junctions
PCT/US2017/068997 WO2018126161A1 (en) 2016-12-30 2017-12-29 Optical isolation systems and circuits and photon detectors with extended lateral p-n junctions

Publications (2)

Publication Number Publication Date
CN109906517A CN109906517A (zh) 2019-06-18
CN109906517B true CN109906517B (zh) 2022-11-08

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Country Status (5)

Country Link
US (1) US10411150B2 (https=)
EP (1) EP3563424A4 (https=)
JP (2) JP2020507203A (https=)
CN (1) CN109906517B (https=)
WO (1) WO2018126161A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128400B1 (en) * 2017-07-26 2018-11-13 Harris Corporation Optocoupler for the control of high voltage
US11366401B2 (en) * 2017-09-22 2022-06-21 Lawrence Livermore National Security, Llc Photoconductive charge trapping apparatus
GB202003507D0 (en) * 2020-03-11 2020-04-29 Spencer Peter Opto-electronic assemblies
US12166145B2 (en) 2020-08-10 2024-12-10 Lawrence Livermore National Security, Llc Diffuse discharge circuit breaker
JP7663522B2 (ja) * 2021-09-15 2025-04-16 株式会社東芝 光検出器、光検出システム、ライダー装置、及び移動体
DE102021210618A1 (de) * 2021-09-23 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung
DE102021210621A1 (de) 2021-09-23 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung
WO2023061637A1 (en) 2021-10-15 2023-04-20 Ams-Osram International Gmbh Optoelectronic device
CN114068755A (zh) * 2021-12-29 2022-02-18 上海集成电路研发中心有限公司 雪崩光电二极管及其制作方法
US20240395736A1 (en) * 2023-05-23 2024-11-28 Allegro Microsystems, Llc Transformer-based isolator with sense coil

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3363155A (en) * 1964-08-19 1968-01-09 Philips Corp Opto-electronic transistor with a base-collector junction spaced from the material heterojunction
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4007978A (en) 1974-01-18 1977-02-15 Texas Instruments Incorporated Integrated optical circuits
US3952265A (en) * 1974-10-29 1976-04-20 Hughes Aircraft Company Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines
US4272753A (en) 1978-08-16 1981-06-09 Harris Corporation Integrated circuit fuse
US4210923A (en) 1979-01-02 1980-07-01 Bell Telephone Laboratories, Incorporated Edge illuminated photodetector with optical fiber alignment
US4267484A (en) 1979-08-28 1981-05-12 The United States Of America As Represented By The Secretary Of The Air Force Parallel multi-electrode spark gap switch
US4996577A (en) 1984-01-23 1991-02-26 International Rectifier Corporation Photovoltaic isolator and process of manufacture thereof
GB2154820B (en) * 1984-01-23 1988-05-25 Int Rectifier Corp Photovoltaic relay
US4757210A (en) * 1987-03-02 1988-07-12 Rockwell International Corporation Edge illuminated detector arrays for determination of spectral content
US4916506A (en) 1988-11-18 1990-04-10 Sprague Electric Company Integrated-circuit lead-frame package with low-resistance ground-lead and heat-sink means
US4891730A (en) 1989-05-10 1990-01-02 The United States Of America As Represented By The Secretary Of The Army Monolithic microwave integrated circuit terminal protection device
US5340993A (en) 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JPH0715030A (ja) 1993-06-07 1995-01-17 Motorola Inc 線形集積光結合素子およびその製造方法
US6728113B1 (en) 1993-06-24 2004-04-27 Polychip, Inc. Method and apparatus for non-conductively interconnecting integrated circuits
US5389578A (en) 1994-01-04 1995-02-14 Texas Instruments Incorporated Optical coupler
US5514892A (en) 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device
US5796570A (en) 1996-09-19 1998-08-18 National Semiconductor Corporation Electrostatic discharge protection package
US6111305A (en) 1997-10-09 2000-08-29 Nippon Telegraph And Telephone Corporation P-I-N semiconductor photodetector
DE19800459A1 (de) 1998-01-08 1999-07-22 Siemens Ag Oszillatorstruktur mit wenigstens einem Oszillator-Schaltkreis und wenigstens einem Resonator
JPH11274196A (ja) 1998-03-26 1999-10-08 Seiko Epson Corp 半導体装置の製造方法およびモールドシステム並びに半導体装置
US5929514A (en) 1998-05-26 1999-07-27 Analog Devices, Inc. Thermally enhanced lead-under-paddle I.C. leadframe
US5990519A (en) 1998-11-27 1999-11-23 United Microelectronics Corp. Electrostatic discharge structure
US6351011B1 (en) 1998-12-08 2002-02-26 Littlefuse, Inc. Protection of an integrated circuit with voltage variable materials
JP2000311959A (ja) 1999-04-27 2000-11-07 Sanyo Electric Co Ltd 半導体装置とその製造方法
US6177686B1 (en) 1999-06-23 2001-01-23 Trw Inc. High power waveguide photodiode with an absorption layer with reduced absorption coefficient
RU2169962C2 (ru) 1999-07-13 2001-06-27 Минг-Тунг ШЕН Модуль с полупроводниковыми микросхемами и способ его изготовления
KR20010037247A (ko) 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
US6509574B2 (en) 1999-12-02 2003-01-21 Texas Instruments Incorporated Optocouplers having integrated organic light-emitting diodes
US6507264B1 (en) 2000-08-28 2003-01-14 Littelfuse, Inc. Integral fuse for use in semiconductor packages
US6538299B1 (en) * 2000-10-03 2003-03-25 International Business Machines Corporation Silicon-on-insulator (SOI) trench photodiode
JP4565727B2 (ja) 2000-10-10 2010-10-20 三洋電機株式会社 半導体装置の製造方法
RU2201017C2 (ru) 2000-10-26 2003-03-20 Зао "Синтэк" Оптрон
US6801114B2 (en) 2002-01-23 2004-10-05 Broadcom Corp. Integrated radio having on-chip transformer balun
JP2003282935A (ja) * 2002-03-26 2003-10-03 Sharp Corp 光結合素子、その製造方法、及び電子機器
US20030183916A1 (en) 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
US6879004B2 (en) 2002-11-05 2005-04-12 Silicon Labs Cp, Inc. High voltage difference amplifier with spark gap ESD protection
US6977468B1 (en) 2003-02-03 2005-12-20 Auburn University Integrated spark gap device
RU2263999C1 (ru) 2004-02-02 2005-11-10 ЗАО "Синтез электронных компонентов" Интегральный оптрон
US7196313B2 (en) 2004-04-02 2007-03-27 Fairchild Semiconductor Corporation Surface mount multi-channel optocoupler
US7180098B2 (en) * 2004-04-05 2007-02-20 Legerity, Inc. Optical isolator device, and method of making same
US7508644B2 (en) 2004-06-30 2009-03-24 Research In Motion Limited Spark gap apparatus and method for electrostatic discharge protection
US7015587B1 (en) 2004-09-07 2006-03-21 National Semiconductor Corporation Stacked die package for semiconductor devices
JP5011115B2 (ja) 2004-10-18 2012-08-29 スタッツ・チップパック・インコーポレイテッド マルチチップリードフレーム半導体パッケージ
JP4724488B2 (ja) 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム
KR100833017B1 (ko) 2005-05-12 2008-05-27 주식회사 엘지화학 직접 패턴법을 이용한 고해상도 패턴형성방법
US7902453B2 (en) * 2005-07-27 2011-03-08 Rensselaer Polytechnic Institute Edge illumination photovoltaic devices and methods of making same
ZA200803120B (en) 2005-09-14 2010-10-27 Univ Witwatersrand Jhb Spark gap protection device
JP4594205B2 (ja) 2005-10-05 2010-12-08 本田技研工業株式会社 車両用方向指示灯
JP5001564B2 (ja) 2006-03-17 2012-08-15 日本電波工業株式会社 表面実装用の水晶発振器とその製造方法
US7732892B2 (en) 2006-11-03 2010-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Fuse structures and integrated circuit devices
US7834435B2 (en) 2006-12-27 2010-11-16 Mediatek Inc. Leadframe with extended pad segments between leads and die pad, and leadframe package using the same
US20080217759A1 (en) 2007-03-06 2008-09-11 Taiwan Solutions Systems Corp. Chip package substrate and structure thereof
US20080266730A1 (en) 2007-04-25 2008-10-30 Karsten Viborg Spark Gaps for ESD Protection
JP2008277469A (ja) * 2007-04-27 2008-11-13 Hitachi Ltd 感光性ｓａｍ膜の露光方法および半導体装置の製造方法
US8436460B1 (en) 2007-05-04 2013-05-07 Cypress Semiconductor Corporation Multiple die paddle leadframe and semiconductor device package
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
JP5076725B2 (ja) 2007-08-13 2012-11-21 富士電機株式会社 絶縁トランスおよび電力変換装置
JP4912275B2 (ja) 2007-11-06 2012-04-11 新光電気工業株式会社 半導体パッケージ
US7847387B2 (en) 2007-11-16 2010-12-07 Infineon Technologies Ag Electrical device and method
US7842542B2 (en) 2008-07-14 2010-11-30 Stats Chippac, Ltd. Embedded semiconductor die package and method of making the same using metal frame carrier
US8148781B2 (en) 2008-07-28 2012-04-03 MCube Inc. Method and structures of monolithically integrated ESD suppression device
US8072770B2 (en) 2008-10-14 2011-12-06 Texas Instruments Incorporated Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame
JP5590814B2 (ja) 2009-03-30 2014-09-17 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP2010245337A (ja) 2009-04-07 2010-10-28 Elpida Memory Inc 半導体装置及びその製造方法
EP2252077B1 (en) 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8183593B2 (en) 2009-10-16 2012-05-22 Oracle America, Inc. Semiconductor die with integrated electro-static discharge device
GB2475099B (en) * 2009-11-06 2012-09-05 Toshiba Res Europ Ltd A photon source for producing entangled photons
US8410463B2 (en) 2009-11-12 2013-04-02 Fairchild Semiconductor Corporation Optocoupler devices
US8368232B2 (en) 2010-03-25 2013-02-05 Qualcomm Incorporated Sacrificial material to facilitate thin die attach
JP5663740B2 (ja) * 2010-12-01 2015-02-04 日本電信電話株式会社 太陽光発電装置
TWI412149B (zh) * 2010-12-16 2013-10-11 Univ Nat Central Laser energy conversion device
US8260098B1 (en) 2011-02-17 2012-09-04 Nxp B.V. Optocoupler circuit
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9279946B2 (en) 2012-05-23 2016-03-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Premolded cavity for optoelectronic device
DE102012208730A1 (de) 2012-05-24 2013-11-28 Osram Opto Semiconductors Gmbh Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
US8674509B2 (en) 2012-05-31 2014-03-18 Freescale Semiconductor, Inc. Integrated circuit die assembly with heat spreader
US9011176B2 (en) 2012-06-09 2015-04-21 Apple Inc. ESD path for connector receptacle
US8633551B1 (en) 2012-06-29 2014-01-21 Intel Corporation Semiconductor package with mechanical fuse
US8704370B2 (en) 2012-06-29 2014-04-22 Freescale Semiconductor, Inc. Semiconductor package structure having an air gap and method for forming
JP6084401B2 (ja) * 2012-08-30 2017-02-22 浜松ホトニクス株式会社 側面入射型のフォトダイオードの製造方法
US9184012B2 (en) 2012-12-19 2015-11-10 Allegro Microsystems, Llc Integrated circuit fuse and method of fabricating the integrated circuit fuse
DE102013101262A1 (de) 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
US20150380353A1 (en) 2013-02-12 2015-12-31 Freescale Semiconductor, Inc. Method of fabricating an integrated circuit device, and an integrated circuit device therefrom
US9349616B2 (en) 2013-03-13 2016-05-24 Stats Chippac, Ltd. Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure
JP6256933B2 (ja) 2013-05-23 2018-01-10 木村　光照 濃縮機能を有する水素ガスセンサとこれに用いる水素ガスセンサプローブ
ITTO20130651A1 (it) 2013-07-31 2015-02-01 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo incapsulato, in particolare un sensore micro-elettro-meccanico incapsulato, dotato di una struttura accessibile, quale un microfono mems e dispositivo incapsulato cosi' ottenuto
US20150069537A1 (en) 2013-09-08 2015-03-12 Wai Yew Lo Package-on-package semiconductor sensor device
GB2521619A (en) 2013-12-23 2015-07-01 Nokia Technologies Oy An apparatus and associated methods for flexible carrier substrates
US9818665B2 (en) 2014-02-28 2017-11-14 Infineon Technologies Ag Method of packaging a semiconductor chip using a 3D printing process and semiconductor package having angled surfaces
US9863828B2 (en) 2014-06-18 2018-01-09 Seiko Epson Corporation Physical quantity sensor, electronic device, altimeter, electronic apparatus, and mobile object
JP2016003977A (ja) 2014-06-18 2016-01-12 セイコーエプソン株式会社 物理量センサー装置、高度計、電子機器および移動体
TWI691036B (zh) 2014-06-23 2020-04-11 澳大利亞商西拉娜集團私人有限公司 具有隔離部的接合晶粒
US9472788B2 (en) 2014-08-27 2016-10-18 3M Innovative Properties Company Thermally-assisted self-assembly method of nanoparticles and nanowires within engineered periodic structures
US20160167089A1 (en) 2014-12-11 2016-06-16 Palo Alto Research Center Incorporation Forming sacrificial structures using phase-change materials that sublimate
US20160209285A1 (en) 2015-01-20 2016-07-21 Seiko Epson Corporation Pressure sensor, method of manufacturing pressure sensor, altimeter, electronic apparatus, and moving object
US9419075B1 (en) 2015-01-28 2016-08-16 Texas Instruments Incorporated Wafer substrate removal
JP2017067463A (ja) 2015-09-28 2017-04-06 セイコーエプソン株式会社 圧力センサー、高度計、電子機器および移動体
JP2017092698A (ja) 2015-11-10 2017-05-25 セイコーエプソン株式会社 発振器、電子機器、及び、移動体
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US9929110B1 (en) 2016-12-30 2018-03-27 Texas Instruments Incorporated Integrated circuit wave device and method
CN107180883A (zh) * 2017-05-04 2017-09-19 南京邮电大学 基于InGaN光子单片集成的多维空间可见光通信系统

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US20180190855A1 (en) 2018-07-05
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US10411150B2 (en) 2019-09-10
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