JP2020502370A - ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 - Google Patents

ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Download PDF

Info

Publication number
JP2020502370A
JP2020502370A JP2019533638A JP2019533638A JP2020502370A JP 2020502370 A JP2020502370 A JP 2020502370A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2020502370 A JP2020502370 A JP 2020502370A
Authority
JP
Japan
Prior art keywords
copper
formula
suppressor
hours
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2019533638A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020502370A5 (https=
Inventor
パトリク キーンレ，マルセル
パトリク キーンレ，マルセル
マイアー，ディーター
アルノルト，マルコ
ハーグ，アレクサンドラ
エムネ，シャルロット
フリューゲル，アレクサンダー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of JP2020502370A publication Critical patent/JP2020502370A/ja
Publication of JP2020502370A5 publication Critical patent/JP2020502370A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
JP2019533638A 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Withdrawn JP2020502370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
EP16205553.7 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Publications (2)

Publication Number Publication Date
JP2020502370A true JP2020502370A (ja) 2020-01-23
JP2020502370A5 JP2020502370A5 (https=) 2021-02-04

Family

ID=57860616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019533638A Withdrawn JP2020502370A (ja) 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物

Country Status (8)

Country Link
US (1) US11926918B2 (https=)
EP (1) EP3559317B1 (https=)
JP (1) JP2020502370A (https=)
KR (1) KR102457310B1 (https=)
CN (2) CN110100048B (https=)
IL (1) IL267332A (https=)
TW (1) TWI746746B (https=)
WO (1) WO2018114985A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
US11459665B2 (en) 2017-12-20 2022-10-04 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
SG11202009106XA (en) 2018-04-20 2020-11-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
US12559852B2 (en) 2019-09-16 2026-02-24 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
KR20220164496A (ko) 2020-04-03 2022-12-13 바스프 에스이 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
CN115720598A (zh) * 2020-07-13 2023-02-28 巴斯夫欧洲公司 用于在钴晶种上电镀铜的组合物
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
EP4263916A1 (en) * 2020-12-18 2023-10-25 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent
US20240318342A1 (en) * 2021-08-05 2024-09-26 Macdermid Enthone Inc. Compositions and methods for the eletrodeposition of nanotwinned copper
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093594A (en) * 1976-08-18 1978-06-06 Celanese Polymer Specialties Company Process for preparing cathodically depositable coating compositions
US4146442A (en) 1978-05-12 1979-03-27 R. O. Hull & Company, Inc. Zinc electroplating baths and process
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US4871429A (en) 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US7628903B1 (en) 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
JP2004518022A (ja) 2000-11-03 2004-06-17 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電子デバイス製造のための金属の電気化学的共析出
US6881732B2 (en) * 2002-06-13 2005-04-19 Chelator Llc Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements
TW200632147A (https=) 2004-11-12 2006-09-16
EP2106413A1 (de) * 2006-12-21 2009-10-07 Basf Se Thermosensitiver polymerer farbübertragungsinhibitor
FR2911878B1 (fr) * 2007-01-31 2012-11-02 Rhodia Recherches & Tech Procede de preparation de polyhydroxy-urethanes.
US20110077376A1 (en) * 2008-05-30 2011-03-31 Katsumi Tokumoto Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it
EP2199315B1 (en) 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115756A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102365396B (zh) * 2009-04-07 2014-12-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
US20120018310A1 (en) 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
MY157126A (en) * 2009-07-30 2016-05-13 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5775077B2 (ja) * 2009-07-30 2015-09-09 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 無ボイドでのサブミクロン構造物充填用の、抑制剤を含有する金属メッキ組成物
RU2585184C2 (ru) 2009-11-27 2016-05-27 Басф Се Композиция для электрического осаждения металла, содержащая выравнивающий агент
MY164464A (en) 2010-06-01 2017-12-15 Basf Se Composition for metal electroplating comprising leveling agent
MY170653A (en) * 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
MY172822A (en) * 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
US20150122662A1 (en) * 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US10519557B2 (en) * 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP7840860B2 (ja) 2020-03-06 2026-04-06 ベーアーエスエフ・エスエー ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP7799623B2 (ja) 2020-05-08 2026-01-15 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
US12522559B2 (en) 2021-07-30 2026-01-13 Ymt Co., Ltd. Leveling agent and electrolytic composition for filling via hole

Also Published As

Publication number Publication date
WO2018114985A1 (en) 2018-06-28
TWI746746B (zh) 2021-11-21
CN115182004A (zh) 2022-10-14
KR20190091360A (ko) 2019-08-05
CN110100048B (zh) 2022-06-21
EP3559317B1 (en) 2025-02-12
IL267332A (en) 2019-08-29
EP3559317A1 (en) 2019-10-30
US11926918B2 (en) 2024-03-12
US20190309429A1 (en) 2019-10-10
TW201835388A (zh) 2018-10-01
KR102457310B1 (ko) 2022-10-20
CN110100048A (zh) 2019-08-06

Similar Documents

Publication Publication Date Title
JP2020502370A (ja) ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物
JP5722872B2 (ja) サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
JP5702359B2 (ja) サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物
EP2417284B1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20200199767A1 (en) Composition for metal electroplating comprising leveling agent
JP2012522897A5 (https=)
JP2012522900A5 (https=)
WO2018073011A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115757A1 (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP2023533784A (ja) コバルトシード上の銅電気メッキ用組成物
JP2021522410A (ja) 抑制剤を含むスズ又はスズ合金電気メッキのための組成物
EP2468927A1 (en) Composition for metal electroplating comprising leveling agent

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201221

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201221

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20210115