JP2020502370A - ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 - Google Patents

ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Download PDF

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Publication number
JP2020502370A
JP2020502370A JP2019533638A JP2019533638A JP2020502370A JP 2020502370 A JP2020502370 A JP 2020502370A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2019533638 A JP2019533638 A JP 2019533638A JP 2020502370 A JP2020502370 A JP 2020502370A
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JP
Japan
Prior art keywords
copper
formula
suppressor
hours
composition according
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JP2019533638A
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English (en)
Japanese (ja)
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JP2020502370A5 (https=
Inventor
パトリク キーンレ，マルセル
パトリク キーンレ，マルセル
マイアー，ディーター
アルノルト，マルコ
ハーグ，アレクサンドラ
エムネ，シャルロット
フリューゲル，アレクサンダー
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BASF SE
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BASF SE
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Publication of JP2020502370A publication Critical patent/JP2020502370A/ja
Publication of JP2020502370A5 publication Critical patent/JP2020502370A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
JP2019533638A 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 Withdrawn JP2020502370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
EP16205553.7 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

Publications (2)

Publication Number Publication Date
JP2020502370A true JP2020502370A (ja) 2020-01-23
JP2020502370A5 JP2020502370A5 (https=) 2021-02-04

Family

ID=57860616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019533638A Withdrawn JP2020502370A (ja) 2016-12-20 2017-12-19 ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物

Country Status (8)

Country Link
US (1) US11926918B2 (https=)
EP (1) EP3559317B1 (https=)
JP (1) JP2020502370A (https=)
KR (1) KR102457310B1 (https=)
CN (2) CN110100048B (https=)
IL (1) IL267332A (https=)
TW (1) TWI746746B (https=)
WO (1) WO2018114985A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
US20190186032A1 (en) * 2017-12-14 2019-06-20 Soulbrain Co., Ltd. Composition for cobalt plating and method for forming metal wiring using the same
US11459665B2 (en) 2017-12-20 2022-10-04 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
EP3781729B1 (en) 2018-04-20 2024-09-25 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
CN114402096A (zh) 2019-09-16 2022-04-26 巴斯夫欧洲公司 用于锡-银合金电镀的包含配位剂的组合物
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
EP4179132B1 (en) 2020-07-13 2024-09-25 Basf Se Composition for copper electroplating on a cobalt seed
US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
WO2022129238A1 (en) * 2020-12-18 2022-06-23 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent
CN117795135A (zh) * 2021-08-05 2024-03-29 麦克德米德乐思公司 用于电沉积纳米孪晶铜的组合物和方法
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN121693598A (zh) 2023-08-03 2026-03-17 巴斯夫欧洲公司 用于在金属晶种上进行铜电镀的组合物
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093594A (en) * 1976-08-18 1978-06-06 Celanese Polymer Specialties Company Process for preparing cathodically depositable coating compositions
US4146442A (en) * 1978-05-12 1979-03-27 R. O. Hull & Company, Inc. Zinc electroplating baths and process
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US4871429A (en) 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US7628903B1 (en) 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
US20020127847A1 (en) 2000-11-03 2002-09-12 Shipley Company, L.L.C. Electrochemical co-deposition of metals for electronic device manufacture
US6881732B2 (en) * 2002-06-13 2005-04-19 Chelator Llc Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
BRPI0721265A2 (pt) * 2006-12-21 2014-04-01 Basf Se Uso de polímeros termicamente sensíveis, processo para a lavagem de têxteis coloridos, copolímero, e, formulação de composição de lavagem.
FR2911878B1 (fr) * 2007-01-31 2012-11-02 Rhodia Recherches & Tech Procede de preparation de polyhydroxy-urethanes.
US20110077376A1 (en) * 2008-05-30 2011-03-31 Katsumi Tokumoto Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it
EP2199315B1 (en) * 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
CN104195602B (zh) 2009-04-07 2017-05-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
WO2010115757A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115796A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
RU2529607C2 (ru) * 2009-04-07 2014-09-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов
SG10201404394QA (en) * 2009-07-30 2014-10-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filing
RU2539895C2 (ru) * 2009-07-30 2015-01-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
EP2504396B1 (en) 2009-11-27 2021-02-24 Basf Se Composition for copper electroplating comprising leveling agent
SG185736A1 (en) 2010-06-01 2012-12-28 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) * 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
CN102212305B (zh) * 2011-05-03 2013-07-31 中国科学院宁波材料技术与工程研究所 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
DE102011116764A1 (de) * 2011-10-22 2013-04-25 Gonzalo Urrutia Desmaison Polykationen und Derivate
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
US20150122662A1 (en) * 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US10519557B2 (en) * 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023517009A (ja) * 2020-03-06 2023-04-21 ビーエーエスエフ ソシエタス・ヨーロピア ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP7840860B2 (ja) 2020-03-06 2026-04-06 ベーアーエスエフ・エスエー ポリカルボキシレートエーテル抑制剤を用いる電気めっき
JP2023524809A (ja) * 2020-05-08 2023-06-13 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP7799623B2 (ja) 2020-05-08 2026-01-15 ラム リサーチ コーポレーション コバルト、ニッケル、および、それらの合金の電気メッキ
JP2023538991A (ja) * 2021-07-30 2023-09-13 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
JP2023541754A (ja) * 2021-07-30 2023-10-04 ワイエムティー カンパニー リミテッド ビアホールを埋め込むためのレベリング剤及び電解質組成物
US12522559B2 (en) 2021-07-30 2026-01-13 Ymt Co., Ltd. Leveling agent and electrolytic composition for filling via hole

Also Published As

Publication number Publication date
EP3559317A1 (en) 2019-10-30
TWI746746B (zh) 2021-11-21
KR20190091360A (ko) 2019-08-05
US20190309429A1 (en) 2019-10-10
KR102457310B1 (ko) 2022-10-20
WO2018114985A1 (en) 2018-06-28
CN115182004A (zh) 2022-10-14
CN110100048B (zh) 2022-06-21
TW201835388A (zh) 2018-10-01
EP3559317B1 (en) 2025-02-12
IL267332A (en) 2019-08-29
US11926918B2 (en) 2024-03-12
CN110100048A (zh) 2019-08-06

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