IL267332A - A preparation for metal coating containing a suppressant for filling without a void - Google Patents
A preparation for metal coating containing a suppressant for filling without a voidInfo
- Publication number
- IL267332A IL267332A IL267332A IL26733219A IL267332A IL 267332 A IL267332 A IL 267332A IL 267332 A IL267332 A IL 267332A IL 26733219 A IL26733219 A IL 26733219A IL 267332 A IL267332 A IL 267332A
- Authority
- IL
- Israel
- Prior art keywords
- composition
- metal plating
- suppressing agent
- void free
- free filling
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyethers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16205553 | 2016-12-20 | ||
| PCT/EP2017/083603 WO2018114985A1 (en) | 2016-12-20 | 2017-12-19 | Composition for metal plating comprising suppressing agent for void free filling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL267332A true IL267332A (en) | 2019-08-29 |
Family
ID=57860616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL267332A IL267332A (en) | 2016-12-20 | 2019-06-13 | A preparation for metal coating containing a suppressant for filling without a void |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11926918B2 (https=) |
| EP (1) | EP3559317B1 (https=) |
| JP (1) | JP2020502370A (https=) |
| KR (1) | KR102457310B1 (https=) |
| CN (2) | CN110100048B (https=) |
| IL (1) | IL267332A (https=) |
| TW (1) | TWI746746B (https=) |
| WO (1) | WO2018114985A1 (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102641595B1 (ko) | 2017-09-04 | 2024-02-27 | 바스프 에스이 | 평탄화 제제를 포함하는 금속 전기 도금용 조성물 |
| US20190186032A1 (en) * | 2017-12-14 | 2019-06-20 | Soulbrain Co., Ltd. | Composition for cobalt plating and method for forming metal wiring using the same |
| US11459665B2 (en) | 2017-12-20 | 2022-10-04 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
| SG11202009106XA (en) | 2018-04-20 | 2020-11-27 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
| CN111690958B (zh) * | 2019-03-15 | 2023-07-28 | 上海新阳半导体材料股份有限公司 | 一种锡镀液、其制备方法和应用 |
| US12559852B2 (en) | 2019-09-16 | 2026-02-24 | Basf Se | Composition for tin-silver alloy electroplating comprising a complexing agent |
| WO2021058336A1 (en) | 2019-09-27 | 2021-04-01 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| EP4034696A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN110938848B (zh) * | 2019-12-26 | 2021-05-11 | 江苏艾森半导体材料股份有限公司 | 一种用于电解沉积铜的组合物及酸铜电镀液 |
| CN115190921A (zh) | 2020-03-06 | 2022-10-14 | 巴斯夫欧洲公司 | 使用聚羧酸化物醚抑制剂的电镀 |
| KR20220164496A (ko) | 2020-04-03 | 2022-12-13 | 바스프 에스이 | 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물 |
| JP7799623B2 (ja) * | 2020-05-08 | 2026-01-15 | ラム リサーチ コーポレーション | コバルト、ニッケル、および、それらの合金の電気メッキ |
| US11280014B2 (en) | 2020-06-05 | 2022-03-22 | Macdermid Enthone Inc. | Silver/tin electroplating bath and method of using the same |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| CN115720598A (zh) * | 2020-07-13 | 2023-02-28 | 巴斯夫欧洲公司 | 用于在钴晶种上电镀铜的组合物 |
| US11384446B2 (en) * | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
| EP4263916A1 (en) * | 2020-12-18 | 2023-10-25 | Basf Se | Composition for tin or tin alloy electroplating comprising leveling agent |
| KR102339867B1 (ko) * | 2021-07-30 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물 |
| KR102339868B1 (ko) * | 2021-07-30 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물 |
| US20240318342A1 (en) * | 2021-08-05 | 2024-09-26 | Macdermid Enthone Inc. | Compositions and methods for the eletrodeposition of nanotwinned copper |
| KR20240070557A (ko) | 2021-10-01 | 2024-05-21 | 바스프 에스이 | 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물 |
| US20230203694A1 (en) * | 2021-12-29 | 2023-06-29 | Basf Se | Alkaline composition for copper electroplating comprising a grain refiner |
| US20250388725A1 (en) | 2022-07-07 | 2025-12-25 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| CN120457244A (zh) | 2022-12-19 | 2025-08-08 | 巴斯夫欧洲公司 | 用于铜纳米孪晶电沉积的组合物 |
| WO2025026863A1 (en) | 2023-08-03 | 2025-02-06 | Basf Se | Composition for copper electroplating on a metal seed |
| WO2026037751A1 (en) | 2024-08-16 | 2026-02-19 | Basf Se | Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4093594A (en) * | 1976-08-18 | 1978-06-06 | Celanese Polymer Specialties Company | Process for preparing cathodically depositable coating compositions |
| US4146442A (en) | 1978-05-12 | 1979-03-27 | R. O. Hull & Company, Inc. | Zinc electroplating baths and process |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US4871429A (en) | 1981-09-11 | 1989-10-03 | Learonal, Inc | Limiting tin sludge formation in tin or tin/lead electroplating solutions |
| JP3301707B2 (ja) | 1997-01-20 | 2002-07-15 | ディップソール株式会社 | 錫−銀合金酸性電気めっき浴 |
| JP4296358B2 (ja) | 1998-01-21 | 2009-07-15 | 石原薬品株式会社 | 銀及び銀合金メッキ浴 |
| US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US7628903B1 (en) | 2000-05-02 | 2009-12-08 | Ishihara Chemical Co., Ltd. | Silver and silver alloy plating bath |
| US6679983B2 (en) | 2000-10-13 | 2004-01-20 | Shipley Company, L.L.C. | Method of electrodepositing copper |
| JP2004518022A (ja) | 2000-11-03 | 2004-06-17 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 電子デバイス製造のための金属の電気化学的共析出 |
| US6881732B2 (en) * | 2002-06-13 | 2005-04-19 | Chelator Llc | Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements |
| TW200632147A (https=) | 2004-11-12 | 2006-09-16 | ||
| EP2106413A1 (de) * | 2006-12-21 | 2009-10-07 | Basf Se | Thermosensitiver polymerer farbübertragungsinhibitor |
| FR2911878B1 (fr) * | 2007-01-31 | 2012-11-02 | Rhodia Recherches & Tech | Procede de preparation de polyhydroxy-urethanes. |
| US20110077376A1 (en) * | 2008-05-30 | 2011-03-31 | Katsumi Tokumoto | Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it |
| EP2199315B1 (en) | 2008-12-19 | 2013-12-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| WO2010115757A1 (en) * | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| WO2010115756A1 (en) * | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| CN102365396B (zh) * | 2009-04-07 | 2014-12-31 | 巴斯夫欧洲公司 | 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 |
| US20120018310A1 (en) | 2009-04-07 | 2012-01-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| MY157126A (en) * | 2009-07-30 | 2016-05-13 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| JP5775077B2 (ja) * | 2009-07-30 | 2015-09-09 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 無ボイドでのサブミクロン構造物充填用の、抑制剤を含有する金属メッキ組成物 |
| RU2585184C2 (ru) | 2009-11-27 | 2016-05-27 | Басф Се | Композиция для электрического осаждения металла, содержащая выравнивающий агент |
| MY164464A (en) | 2010-06-01 | 2017-12-15 | Basf Se | Composition for metal electroplating comprising leveling agent |
| MY170653A (en) * | 2010-12-21 | 2019-08-23 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN102212305B (zh) * | 2011-05-03 | 2013-07-31 | 中国科学院宁波材料技术与工程研究所 | 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法 |
| US9631292B2 (en) | 2011-06-01 | 2017-04-25 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| DE102011116764A1 (de) * | 2011-10-22 | 2013-04-25 | Gonzalo Urrutia Desmaison | Polykationen und Derivate |
| US8980077B2 (en) | 2012-03-30 | 2015-03-17 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| MY172822A (en) * | 2012-11-09 | 2019-12-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| US20150122662A1 (en) * | 2013-11-05 | 2015-05-07 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| US10519557B2 (en) * | 2016-02-12 | 2019-12-31 | Macdermid Enthone Inc. | Leveler compositions for use in copper deposition in manufacture of microelectronics |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2017
- 2017-12-19 CN CN201780078648.2A patent/CN110100048B/zh active Active
- 2017-12-19 EP EP17835664.8A patent/EP3559317B1/en active Active
- 2017-12-19 JP JP2019533638A patent/JP2020502370A/ja not_active Withdrawn
- 2017-12-19 KR KR1020197020953A patent/KR102457310B1/ko active Active
- 2017-12-19 CN CN202210633931.XA patent/CN115182004A/zh active Pending
- 2017-12-19 US US16/468,467 patent/US11926918B2/en active Active
- 2017-12-19 WO PCT/EP2017/083603 patent/WO2018114985A1/en not_active Ceased
- 2017-12-20 TW TW106144836A patent/TWI746746B/zh active
-
2019
- 2019-06-13 IL IL267332A patent/IL267332A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018114985A1 (en) | 2018-06-28 |
| TWI746746B (zh) | 2021-11-21 |
| CN115182004A (zh) | 2022-10-14 |
| KR20190091360A (ko) | 2019-08-05 |
| CN110100048B (zh) | 2022-06-21 |
| EP3559317B1 (en) | 2025-02-12 |
| EP3559317A1 (en) | 2019-10-30 |
| JP2020502370A (ja) | 2020-01-23 |
| US11926918B2 (en) | 2024-03-12 |
| US20190309429A1 (en) | 2019-10-10 |
| TW201835388A (zh) | 2018-10-01 |
| KR102457310B1 (ko) | 2022-10-20 |
| CN110100048A (zh) | 2019-08-06 |
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