CN110100048B - 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 - Google Patents

包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 Download PDF

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CN110100048B
CN110100048B CN201780078648.2A CN201780078648A CN110100048B CN 110100048 B CN110100048 B CN 110100048B CN 201780078648 A CN201780078648 A CN 201780078648A CN 110100048 B CN110100048 B CN 110100048B
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composition according
copper
electroplating
group
hours
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CN110100048A (zh
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M·P·基恩勒
D·梅尔
M·阿诺德
A·哈格
C·埃姆内特
A·弗鲁格尔
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BASF SE
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BASF SE
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/30Electroplating: Baths therefor from solutions of tin
    • C25D3/32Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/60Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
CN201780078648.2A 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物 Active CN110100048B (zh)

Priority Applications (1)

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CN202210633931.XA CN115182004A (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16205553 2016-12-20
EP16205553.7 2016-12-20
PCT/EP2017/083603 WO2018114985A1 (en) 2016-12-20 2017-12-19 Composition for metal plating comprising suppressing agent for void free filling

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CN202210633931.XA Division CN115182004A (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物

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CN110100048A CN110100048A (zh) 2019-08-06
CN110100048B true CN110100048B (zh) 2022-06-21

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CN201780078648.2A Active CN110100048B (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN202210633931.XA Pending CN115182004A (zh) 2016-12-20 2017-12-19 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物

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US (1) US11926918B2 (https=)
EP (1) EP3559317B1 (https=)
JP (1) JP2020502370A (https=)
KR (1) KR102457310B1 (https=)
CN (2) CN110100048B (https=)
IL (1) IL267332A (https=)
TW (1) TWI746746B (https=)
WO (1) WO2018114985A1 (https=)

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KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
KR102339868B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
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KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20230203694A1 (en) * 2021-12-29 2023-06-29 Basf Se Alkaline composition for copper electroplating comprising a grain refiner
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Also Published As

Publication number Publication date
WO2018114985A1 (en) 2018-06-28
TWI746746B (zh) 2021-11-21
CN115182004A (zh) 2022-10-14
KR20190091360A (ko) 2019-08-05
EP3559317B1 (en) 2025-02-12
IL267332A (en) 2019-08-29
EP3559317A1 (en) 2019-10-30
JP2020502370A (ja) 2020-01-23
US11926918B2 (en) 2024-03-12
US20190309429A1 (en) 2019-10-10
TW201835388A (zh) 2018-10-01
KR102457310B1 (ko) 2022-10-20
CN110100048A (zh) 2019-08-06

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