JP2012522900A5 - - Google Patents

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Publication number
JP2012522900A5
JP2012522900A5 JP2012503976A JP2012503976A JP2012522900A5 JP 2012522900 A5 JP2012522900 A5 JP 2012522900A5 JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012522900 A5 JP2012522900 A5 JP 2012522900A5
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JP
Japan
Prior art keywords
copper
metal
alkylene
substrate
composition according
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JP2012503976A
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English (en)
Japanese (ja)
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JP2012522900A (ja
JP5722872B2 (ja
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Priority claimed from PCT/EP2010/054281 external-priority patent/WO2010115796A1/en
Publication of JP2012522900A publication Critical patent/JP2012522900A/ja
Publication of JP2012522900A5 publication Critical patent/JP2012522900A5/ja
Application granted granted Critical
Publication of JP5722872B2 publication Critical patent/JP5722872B2/ja
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JP2012503976A 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5722872B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540.7 2009-04-07
EP09157540 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522900A JP2012522900A (ja) 2012-09-27
JP2012522900A5 true JP2012522900A5 (https=) 2014-09-11
JP5722872B2 JP5722872B2 (ja) 2015-05-27

Family

ID=42935669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012503976A Active JP5722872B2 (ja) 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120018310A1 (https=)
EP (1) EP2417285B1 (https=)
JP (1) JP5722872B2 (https=)
KR (1) KR101759352B1 (https=)
CN (1) CN102365395B (https=)
IL (1) IL215157A (https=)
MY (1) MY156728A (https=)
RU (1) RU2542219C2 (https=)
SG (1) SG174393A1 (https=)
TW (1) TWI487814B (https=)
WO (1) WO2010115796A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632147A (https=) 2004-11-12 2006-09-16
WO2010115756A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
MY157126A (en) 2009-07-30 2016-05-13 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US9834677B2 (en) 2010-03-18 2017-12-05 Basf Se Composition for metal electroplating comprising leveling agent
MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
WO2017004424A1 (en) 2015-06-30 2017-01-05 Enthone Inc. Cobalt filling of interconnects in microelectronics
EP3516096A4 (en) * 2016-09-22 2020-10-21 MacDermid Enthone Inc. MICROELECTRONIC COPPER ELECTRODEPOSITION
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
PL3581684T3 (pl) * 2018-06-11 2021-06-14 Atotech Deutschland Gmbh Kwasowa kąpiel galwaniczna cynkowa lub stopu cynkowo-niklowego do osadzania warstwy cynku lub stopu cynkowo-niklowego
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
KR20220164496A (ko) 2020-04-03 2022-12-13 바스프 에스이 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2024155592A1 (en) * 2023-01-18 2024-07-25 Macdermid Enthone Inc. Electrodeposition of thin copper films on conductive substrates

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US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
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DE19622221A1 (de) * 1996-06-03 1997-12-04 Henkel Kgaa Verfahren zur Beschichtung elektrisch leitfähiger Substrate
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