IL215157A - The metal coating composition contains a concealment factor for filling a sub-micron free space - Google Patents
The metal coating composition contains a concealment factor for filling a sub-micron free spaceInfo
- Publication number
- IL215157A IL215157A IL215157A IL21515711A IL215157A IL 215157 A IL215157 A IL 215157A IL 215157 A IL215157 A IL 215157A IL 21515711 A IL21515711 A IL 21515711A IL 215157 A IL215157 A IL 215157A
- Authority
- IL
- Israel
- Prior art keywords
- composition
- metal plating
- suppressing agent
- void free
- feature filling
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09157540 | 2009-04-07 | ||
| US25632809P | 2009-10-30 | 2009-10-30 | |
| PCT/EP2010/054281 WO2010115796A1 (en) | 2009-04-07 | 2010-03-31 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL215157A0 IL215157A0 (en) | 2011-12-29 |
| IL215157A true IL215157A (en) | 2015-06-30 |
Family
ID=42935669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL215157A IL215157A (en) | 2009-04-07 | 2011-09-15 | The metal coating composition contains a concealment factor for filling a sub-micron free space |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US20120018310A1 (https=) |
| EP (1) | EP2417285B1 (https=) |
| JP (1) | JP5722872B2 (https=) |
| KR (1) | KR101759352B1 (https=) |
| CN (1) | CN102365395B (https=) |
| IL (1) | IL215157A (https=) |
| MY (1) | MY156728A (https=) |
| RU (1) | RU2542219C2 (https=) |
| SG (1) | SG174393A1 (https=) |
| TW (1) | TWI487814B (https=) |
| WO (1) | WO2010115796A1 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| CN104195602B (zh) * | 2009-04-07 | 2017-05-31 | 巴斯夫欧洲公司 | 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 |
| SG10201404394QA (en) | 2009-07-30 | 2014-10-30 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
| EP2547731B1 (en) | 2010-03-18 | 2014-07-30 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2655457B1 (en) | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN103547631B (zh) | 2011-06-01 | 2016-07-06 | 巴斯夫欧洲公司 | 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物 |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| RU2015121797A (ru) | 2012-11-09 | 2017-01-10 | Басф Се | Композиция для электролитического осаждения металла, содержащая выравнивающий агент |
| WO2017004424A1 (en) | 2015-06-30 | 2017-01-05 | Enthone Inc. | Cobalt filling of interconnects in microelectronics |
| JP7039601B2 (ja) * | 2016-09-22 | 2022-03-22 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US11926918B2 (en) | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| US11035048B2 (en) * | 2017-07-05 | 2021-06-15 | Macdermid Enthone Inc. | Cobalt filling of interconnects |
| US11387108B2 (en) | 2017-09-04 | 2022-07-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP3581684B1 (en) * | 2018-06-11 | 2020-11-18 | ATOTECH Deutschland GmbH | An acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| EP4034696A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| JP2023520530A (ja) | 2020-04-03 | 2023-05-17 | ビーエーエスエフ ソシエタス・ヨーロピア | ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物 |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| KR20240070557A (ko) | 2021-10-01 | 2024-05-21 | 바스프 에스이 | 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물 |
| US20250388725A1 (en) | 2022-07-07 | 2025-12-25 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| WO2024132828A1 (en) | 2022-12-19 | 2024-06-27 | Basf Se | A composition for copper nanotwin electrodeposition |
| CN120530228A (zh) * | 2023-01-18 | 2025-08-22 | 麦克德米德乐思公司 | 薄铜膜在导电基板上的电沉积 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) * | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| DE19622221A1 (de) * | 1996-06-03 | 1997-12-04 | Henkel Kgaa | Verfahren zur Beschichtung elektrisch leitfähiger Substrate |
| US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US20040045832A1 (en) | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TWI400365B (zh) * | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| WO2008015168A1 (de) | 2006-08-03 | 2008-02-07 | Basf Se | Verfahren zum aufbringen einer metallschicht auf einem substrat |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| EP2335347A1 (en) * | 2008-09-23 | 2011-06-22 | Aerovironment inc. | Sensorless optimum torque control for high efficiency ironless permanent magnet machine |
| US7966410B2 (en) * | 2008-09-25 | 2011-06-21 | Microsoft Corporation | Coordinating data delivery using time suggestions |
-
2010
- 2010-03-31 WO PCT/EP2010/054281 patent/WO2010115796A1/en not_active Ceased
- 2010-03-31 US US13/260,173 patent/US20120018310A1/en not_active Abandoned
- 2010-03-31 CN CN201080015497.4A patent/CN102365395B/zh active Active
- 2010-03-31 MY MYPI2011004466A patent/MY156728A/en unknown
- 2010-03-31 EP EP10711897.8A patent/EP2417285B1/en active Active
- 2010-03-31 SG SG2011066396A patent/SG174393A1/en unknown
- 2010-03-31 JP JP2012503976A patent/JP5722872B2/ja active Active
- 2010-03-31 KR KR1020117026497A patent/KR101759352B1/ko active Active
- 2010-03-31 RU RU2011144619/02A patent/RU2542219C2/ru not_active IP Right Cessation
- 2010-04-06 TW TW099110628A patent/TWI487814B/zh active
-
2011
- 2011-09-15 IL IL215157A patent/IL215157A/en active IP Right Grant
-
2020
- 2020-01-14 US US16/742,085 patent/US20200173029A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2417285A1 (en) | 2012-02-15 |
| WO2010115796A1 (en) | 2010-10-14 |
| CN102365395A (zh) | 2012-02-29 |
| EP2417285B1 (en) | 2014-07-16 |
| MY156728A (en) | 2016-03-15 |
| JP2012522900A (ja) | 2012-09-27 |
| SG174393A1 (en) | 2011-11-28 |
| RU2542219C2 (ru) | 2015-02-20 |
| KR20110138401A (ko) | 2011-12-27 |
| US20200173029A1 (en) | 2020-06-04 |
| RU2011144619A (ru) | 2013-05-20 |
| IL215157A0 (en) | 2011-12-29 |
| TW201040322A (en) | 2010-11-16 |
| JP5722872B2 (ja) | 2015-05-27 |
| CN102365395B (zh) | 2015-04-29 |
| KR101759352B1 (ko) | 2017-07-18 |
| TWI487814B (zh) | 2015-06-11 |
| US20120018310A1 (en) | 2012-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed |