JP5722872B2 - サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 - Google Patents

サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Download PDF

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Publication number
JP5722872B2
JP5722872B2 JP2012503976A JP2012503976A JP5722872B2 JP 5722872 B2 JP5722872 B2 JP 5722872B2 JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012503976 A JP2012503976 A JP 2012503976A JP 5722872 B2 JP5722872 B2 JP 5722872B2
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Japan
Prior art keywords
copper
metal
alkylene
substrate
composition according
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JP2012503976A
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English (en)
Japanese (ja)
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JP2012522900A (ja
JP2012522900A5 (https=
Inventor
レーガー−ゲプフェルト，コルネリア
ベネディクト レター，ロマーン
ベネディクト レター，ロマーン
エムネット，シャルロッテ
ハーク，アレクサンドラ
マイァ，ディーター
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BASF SE
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BASF SE
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Publication of JP2012522900A5 publication Critical patent/JP2012522900A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
JP2012503976A 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5722872B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540 2009-04-07
EP09157540.7 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522900A JP2012522900A (ja) 2012-09-27
JP2012522900A5 JP2012522900A5 (https=) 2014-09-11
JP5722872B2 true JP5722872B2 (ja) 2015-05-27

Family

ID=42935669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012503976A Active JP5722872B2 (ja) 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120018310A1 (https=)
EP (1) EP2417285B1 (https=)
JP (1) JP5722872B2 (https=)
KR (1) KR101759352B1 (https=)
CN (1) CN102365395B (https=)
IL (1) IL215157A (https=)
MY (1) MY156728A (https=)
RU (1) RU2542219C2 (https=)
SG (1) SG174393A1 (https=)
TW (1) TWI487814B (https=)
WO (1) WO2010115796A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
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TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
CN104195602B (zh) * 2009-04-07 2017-05-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
SG10201404394QA (en) 2009-07-30 2014-10-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filing
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
WO2017004424A1 (en) 2015-06-30 2017-01-05 Enthone Inc. Cobalt filling of interconnects in microelectronics
JP7039601B2 (ja) * 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3581684B1 (en) * 2018-06-11 2020-11-18 ATOTECH Deutschland GmbH An acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN120530228A (zh) * 2023-01-18 2025-08-22 麦克德米德乐思公司 薄铜膜在导电基板上的电沉积

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US4347108A (en) * 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
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Also Published As

Publication number Publication date
EP2417285A1 (en) 2012-02-15
WO2010115796A1 (en) 2010-10-14
CN102365395A (zh) 2012-02-29
EP2417285B1 (en) 2014-07-16
MY156728A (en) 2016-03-15
IL215157A (en) 2015-06-30
JP2012522900A (ja) 2012-09-27
SG174393A1 (en) 2011-11-28
RU2542219C2 (ru) 2015-02-20
KR20110138401A (ko) 2011-12-27
US20200173029A1 (en) 2020-06-04
RU2011144619A (ru) 2013-05-20
IL215157A0 (en) 2011-12-29
TW201040322A (en) 2010-11-16
CN102365395B (zh) 2015-04-29
KR101759352B1 (ko) 2017-07-18
TWI487814B (zh) 2015-06-11
US20120018310A1 (en) 2012-01-26

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