JP2012522897A5 - - Google Patents

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Publication number
JP2012522897A5
JP2012522897A5 JP2012503952A JP2012503952A JP2012522897A5 JP 2012522897 A5 JP2012522897 A5 JP 2012522897A5 JP 2012503952 A JP2012503952 A JP 2012503952A JP 2012503952 A JP2012503952 A JP 2012503952A JP 2012522897 A5 JP2012522897 A5 JP 2012522897A5
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JP
Japan
Prior art keywords
copper
metal
alkylene
group
present
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JP2012503952A
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English (en)
Japanese (ja)
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JP2012522897A (ja
JP5702359B2 (ja
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Priority claimed from PCT/EP2010/053881 external-priority patent/WO2010115717A1/en
Publication of JP2012522897A publication Critical patent/JP2012522897A/ja
Publication of JP2012522897A5 publication Critical patent/JP2012522897A5/ja
Application granted granted Critical
Publication of JP5702359B2 publication Critical patent/JP5702359B2/ja
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JP2012503952A 2009-04-07 2010-03-25 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5702359B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09005106 2009-04-07
EP09005106.1 2009-04-07
US25633309P 2009-10-30 2009-10-30
US61/256,333 2009-10-30
PCT/EP2010/053881 WO2010115717A1 (en) 2009-04-07 2010-03-25 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522897A JP2012522897A (ja) 2012-09-27
JP2012522897A5 true JP2012522897A5 (https=) 2014-09-11
JP5702359B2 JP5702359B2 (ja) 2015-04-15

Family

ID=42935665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012503952A Active JP5702359B2 (ja) 2009-04-07 2010-03-25 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120024711A1 (https=)
EP (1) EP2417283B1 (https=)
JP (1) JP5702359B2 (https=)
KR (1) KR101720365B1 (https=)
CN (1) CN102365396B (https=)
IL (1) IL215018B (https=)
MY (1) MY158203A (https=)
RU (1) RU2529607C2 (https=)
SG (1) SG174264A1 (https=)
TW (1) TWI489011B (https=)
WO (1) WO2010115717A1 (https=)

Families Citing this family (29)

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Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
SG10201404394QA (en) 2009-07-30 2014-10-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filing
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) * 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
CN107531859B (zh) * 2015-04-28 2020-02-14 罗门哈斯电子材料有限责任公司 作为电镀浴添加剂的双酸酐与二胺的反应产物
ES2681836T3 (es) * 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
KR102566586B1 (ko) * 2016-07-18 2023-08-16 바스프 에스이 보이드 없는 서브미크론 피쳐 충전을 위한 첨가제를 포함하는 코발트 도금용 조성물
JP7039601B2 (ja) 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
US11459665B2 (en) * 2017-12-20 2022-10-04 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
EP3781729B1 (en) * 2018-04-20 2024-09-25 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
EP4179132B1 (en) 2020-07-13 2024-09-25 Basf Se Composition for copper electroplating on a cobalt seed
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN121693598A (zh) 2023-08-03 2026-03-17 巴斯夫欧洲公司 用于在金属晶种上进行铜电镀的组合物
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
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DE19625991A1 (de) 1996-06-28 1998-01-02 Philips Patentverwaltung Bildschirm mit haftungsvermittelnder Silikatschicht
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TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
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