SG174264A1 - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature filling Download PDFInfo
- Publication number
- SG174264A1 SG174264A1 SG2011064086A SG2011064086A SG174264A1 SG 174264 A1 SG174264 A1 SG 174264A1 SG 2011064086 A SG2011064086 A SG 2011064086A SG 2011064086 A SG2011064086 A SG 2011064086A SG 174264 A1 SG174264 A1 SG 174264A1
- Authority
- SG
- Singapore
- Prior art keywords
- copper
- composition according
- radicals
- anyone
- independently
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09005106 | 2009-04-07 | ||
| US25633309P | 2009-10-30 | 2009-10-30 | |
| PCT/EP2010/053881 WO2010115717A1 (en) | 2009-04-07 | 2010-03-25 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG174264A1 true SG174264A1 (en) | 2011-10-28 |
Family
ID=42935665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011064086A SG174264A1 (en) | 2009-04-07 | 2010-03-25 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US20120024711A1 (https=) |
| EP (1) | EP2417283B1 (https=) |
| JP (1) | JP5702359B2 (https=) |
| KR (1) | KR101720365B1 (https=) |
| CN (1) | CN102365396B (https=) |
| IL (1) | IL215018B (https=) |
| MY (1) | MY158203A (https=) |
| RU (1) | RU2529607C2 (https=) |
| SG (1) | SG174264A1 (https=) |
| TW (1) | TWI489011B (https=) |
| WO (1) | WO2010115717A1 (https=) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| SG10201404394QA (en) | 2009-07-30 | 2014-10-30 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
| EP2547731B1 (en) | 2010-03-18 | 2014-07-30 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2655457B1 (en) * | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN103547631B (zh) | 2011-06-01 | 2016-07-06 | 巴斯夫欧洲公司 | 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物 |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US9243339B2 (en) * | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
| RU2015121797A (ru) | 2012-11-09 | 2017-01-10 | Басф Се | Композиция для электролитического осаждения металла, содержащая выравнивающий агент |
| CN107531859B (zh) * | 2015-04-28 | 2020-02-14 | 罗门哈斯电子材料有限责任公司 | 作为电镀浴添加剂的双酸酐与二胺的反应产物 |
| ES2681836T3 (es) * | 2015-09-10 | 2018-09-17 | Atotech Deutschland Gmbh | Composición de baño para chapado de cobre |
| KR102566586B1 (ko) * | 2016-07-18 | 2023-08-16 | 바스프 에스이 | 보이드 없는 서브미크론 피쳐 충전을 위한 첨가제를 포함하는 코발트 도금용 조성물 |
| JP7039601B2 (ja) | 2016-09-22 | 2022-03-22 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US11926918B2 (en) | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| US11387108B2 (en) | 2017-09-04 | 2022-07-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| US11459665B2 (en) * | 2017-12-20 | 2022-10-04 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
| EP3781729B1 (en) * | 2018-04-20 | 2024-09-25 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
| CN110284162B (zh) * | 2019-07-22 | 2020-06-30 | 广州三孚新材料科技股份有限公司 | 一种光伏汇流焊带无氰碱性镀铜液及其制备方法 |
| EP4034696A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| JP2023520530A (ja) | 2020-04-03 | 2023-05-17 | ビーエーエスエフ ソシエタス・ヨーロピア | ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物 |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| EP4179132B1 (en) | 2020-07-13 | 2024-09-25 | Basf Se | Composition for copper electroplating on a cobalt seed |
| KR20240070557A (ko) | 2021-10-01 | 2024-05-21 | 바스프 에스이 | 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물 |
| US20250388725A1 (en) | 2022-07-07 | 2025-12-25 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| WO2024132828A1 (en) | 2022-12-19 | 2024-06-27 | Basf Se | A composition for copper nanotwin electrodeposition |
| CN121693598A (zh) | 2023-08-03 | 2026-03-17 | 巴斯夫欧洲公司 | 用于在金属晶种上进行铜电镀的组合物 |
| WO2026037751A1 (en) | 2024-08-16 | 2026-02-19 | Basf Se | Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| RU2103420C1 (ru) * | 1995-06-06 | 1998-01-27 | Калининградский государственный университет | Электролит блестящего меднения |
| DE19625991A1 (de) | 1996-06-28 | 1998-01-02 | Philips Patentverwaltung | Bildschirm mit haftungsvermittelnder Silikatschicht |
| US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| CU23716A1 (es) * | 2008-09-30 | 2011-10-05 | Ct Ingenieria Genetica Biotech | Péptido antagonista de la actividad de la interleucina-15 |
-
2010
- 2010-03-25 RU RU2011144620/02A patent/RU2529607C2/ru not_active IP Right Cessation
- 2010-03-25 JP JP2012503952A patent/JP5702359B2/ja active Active
- 2010-03-25 WO PCT/EP2010/053881 patent/WO2010115717A1/en not_active Ceased
- 2010-03-25 US US13/257,716 patent/US20120024711A1/en not_active Abandoned
- 2010-03-25 KR KR1020117026530A patent/KR101720365B1/ko active Active
- 2010-03-25 MY MYPI2011004272A patent/MY158203A/en unknown
- 2010-03-25 CN CN201080015501.7A patent/CN102365396B/zh active Active
- 2010-03-25 SG SG2011064086A patent/SG174264A1/en unknown
- 2010-03-25 EP EP10710049.7A patent/EP2417283B1/en active Active
- 2010-04-06 TW TW099110627A patent/TWI489011B/zh active
-
2011
- 2011-09-07 IL IL215018A patent/IL215018B/en active IP Right Grant
-
2021
- 2021-05-25 US US17/329,459 patent/US20210317582A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN102365396B (zh) | 2014-12-31 |
| WO2010115717A1 (en) | 2010-10-14 |
| KR101720365B1 (ko) | 2017-03-27 |
| RU2529607C2 (ru) | 2014-09-27 |
| EP2417283A1 (en) | 2012-02-15 |
| EP2417283B1 (en) | 2014-07-30 |
| JP2012522897A (ja) | 2012-09-27 |
| US20210317582A1 (en) | 2021-10-14 |
| KR20120089564A (ko) | 2012-08-13 |
| TWI489011B (zh) | 2015-06-21 |
| IL215018A0 (en) | 2011-12-01 |
| RU2011144620A (ru) | 2013-05-20 |
| MY158203A (en) | 2016-09-15 |
| CN102365396A (zh) | 2012-02-29 |
| JP5702359B2 (ja) | 2015-04-15 |
| US20120024711A1 (en) | 2012-02-02 |
| IL215018B (en) | 2018-02-28 |
| TW201042095A (en) | 2010-12-01 |
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