KR101759352B1 - 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 - Google Patents

무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Download PDF

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KR101759352B1
KR101759352B1 KR1020117026497A KR20117026497A KR101759352B1 KR 101759352 B1 KR101759352 B1 KR 101759352B1 KR 1020117026497 A KR1020117026497 A KR 1020117026497A KR 20117026497 A KR20117026497 A KR 20117026497A KR 101759352 B1 KR101759352 B1 KR 101759352B1
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South Korea
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copper
inhibitor
substrate
composition
metal
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KR20110138401A (ko
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코넬리아 뢰거-괴퍼트
로만 베네딕트 라에터
샤를롯 엠넷
알렉산드라 하그
디터 마이어
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
KR1020117026497A 2009-04-07 2010-03-31 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Active KR101759352B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540 2009-04-07
EP09157540.7 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20110138401A KR20110138401A (ko) 2011-12-27
KR101759352B1 true KR101759352B1 (ko) 2017-07-18

Family

ID=42935669

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Application Number Title Priority Date Filing Date
KR1020117026497A Active KR101759352B1 (ko) 2009-04-07 2010-03-31 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물

Country Status (11)

Country Link
US (2) US20120018310A1 (https=)
EP (1) EP2417285B1 (https=)
JP (1) JP5722872B2 (https=)
KR (1) KR101759352B1 (https=)
CN (1) CN102365395B (https=)
IL (1) IL215157A (https=)
MY (1) MY156728A (https=)
RU (1) RU2542219C2 (https=)
SG (1) SG174393A1 (https=)
TW (1) TWI487814B (https=)
WO (1) WO2010115796A1 (https=)

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TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
CN104195602B (zh) * 2009-04-07 2017-05-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
SG10201404394QA (en) 2009-07-30 2014-10-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filing
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
WO2017004424A1 (en) 2015-06-30 2017-01-05 Enthone Inc. Cobalt filling of interconnects in microelectronics
JP7039601B2 (ja) * 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3581684B1 (en) * 2018-06-11 2020-11-18 ATOTECH Deutschland GmbH An acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
CN120530228A (zh) * 2023-01-18 2025-08-22 麦克德米德乐思公司 薄铜膜在导电基板上的电沉积

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US20070289875A1 (en) 2004-11-12 2007-12-20 Enthone Inc. Copper electrodeposition in microelectronics
WO2008015168A1 (de) 2006-08-03 2008-02-07 Basf Se Verfahren zum aufbringen einer metallschicht auf einem substrat

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Also Published As

Publication number Publication date
EP2417285A1 (en) 2012-02-15
WO2010115796A1 (en) 2010-10-14
CN102365395A (zh) 2012-02-29
EP2417285B1 (en) 2014-07-16
MY156728A (en) 2016-03-15
IL215157A (en) 2015-06-30
JP2012522900A (ja) 2012-09-27
SG174393A1 (en) 2011-11-28
RU2542219C2 (ru) 2015-02-20
KR20110138401A (ko) 2011-12-27
US20200173029A1 (en) 2020-06-04
RU2011144619A (ru) 2013-05-20
IL215157A0 (en) 2011-12-29
TW201040322A (en) 2010-11-16
JP5722872B2 (ja) 2015-05-27
CN102365395B (zh) 2015-04-29
TWI487814B (zh) 2015-06-11
US20120018310A1 (en) 2012-01-26

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