JP2020145238A - ウエハ載置装置 - Google Patents
ウエハ載置装置 Download PDFInfo
- Publication number
- JP2020145238A JP2020145238A JP2019038891A JP2019038891A JP2020145238A JP 2020145238 A JP2020145238 A JP 2020145238A JP 2019038891 A JP2019038891 A JP 2019038891A JP 2019038891 A JP2019038891 A JP 2019038891A JP 2020145238 A JP2020145238 A JP 2020145238A
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- Prior art keywords
- flow path
- ceramic plate
- layer
- plate
- wafer mounting
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma & Fusion (AREA)
Abstract
Description
上面にウエハ載置面を有し、静電電極及びヒータ電極の少なくとも一方が内蔵されたセラミックプレートと、
前記セラミックプレートの前記ウエハ載置面とは反対側の下面に配置され、前記セラミックプレートを冷却する冷却プレートと、
を備え、
前記冷却プレートには冷媒流路が設けられ、前記冷媒流路は少なくとも一部が前記ウエハ載置面からの距離の異なる上下2層以上の多層構造である。
Claims (8)
- 上面にウエハ載置面を有し、静電電極及びヒータ電極の少なくとも一方が内蔵されたセラミックプレートと、
前記セラミックプレートの前記ウエハ載置面とは反対側の下面に配置され、前記セラミックプレートを冷却する冷却プレートと、
を備え、
前記冷却プレートには冷媒流路が設けられ、前記冷媒流路は少なくとも一部が前記ウエハ載置面からの距離の異なる上下2層以上の多層構造である、
ウエハ載置装置。 - 前記冷媒流路のうち前記セラミックプレートに近い層は、前記セラミックプレートから遠い層よりも、流路間距離、流路幅及び流路断面積のうちの1以上が小さい、請求項1に記載のウエハ載置装置。
- 前記冷媒流路のうち前記セラミックプレートに近い層は、前記冷却プレートを複数に分割したゾーンごとに独立して設けられている、請求項1又は2に記載のウエハ載置装置。
- 前記冷却プレートは、上下方向に貫通する貫通孔を有し、前記貫通孔の周辺において、前記冷媒流路のうち前記セラミックプレートに近い層は、前記セラミックプレートから遠い層よりも前記貫通孔の近くに設けられている、請求項1〜3のいずれか1項に記載のウエハ載置装置。
- 前記冷媒流路は、平面視したときに、前記セラミックプレートに近い層と前記セラミックプレートから遠い層とが交互に配列されている、請求項1〜4のいずれか1項に記載のウエハ載置装置。
- 前記冷媒流路は、前記冷却プレートを複数に分割したゾーンの境界において、前記境界を挟んだ一方にある前記セラミックプレートに近い層と前記境界を挟んだ他方にある前記セラミックプレートから遠い層とが第1連通部で連通するとともに、前記境界を挟んだ一方にある前記セラミックプレートから遠い層と前記境界を挟んだ他方にある前記セラミックプレートに近い層とが第2連通部で連通して、層の上下が入れ替わる、請求項1〜5のいずれか1項に記載のウエハ載置装置。
- 前記冷媒流路は、前記冷却プレートを平面視したときに、前記セラミックプレートに近い層の入口側に前記セラミックプレートから遠い層の出口があり、前記セラミックプレートに近い層の出口側に前記セラミックプレートから遠い層の入口がある、請求項1〜6のいずれか1項に記載のウエハ載置装置。
- 前記冷却プレートは、ヒータを有さない、請求項1〜7のいずれか1項に記載のウエハ載置装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019038891A JP7221737B2 (ja) | 2019-03-04 | 2019-03-04 | ウエハ載置装置 |
US16/803,143 US11784078B2 (en) | 2019-03-04 | 2020-02-27 | Wafer placement apparatus |
KR1020200025941A KR20200106456A (ko) | 2019-03-04 | 2020-03-02 | 웨이퍼 배치 장치 |
TW109106876A TWI839477B (zh) | 2019-03-04 | 2020-03-03 | 晶圓承載裝置 |
CN202010143272.2A CN111653514B (zh) | 2019-03-04 | 2020-03-04 | 晶圆载置装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019038891A JP7221737B2 (ja) | 2019-03-04 | 2019-03-04 | ウエハ載置装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020145238A true JP2020145238A (ja) | 2020-09-10 |
JP7221737B2 JP7221737B2 (ja) | 2023-02-14 |
Family
ID=72335469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019038891A Active JP7221737B2 (ja) | 2019-03-04 | 2019-03-04 | ウエハ載置装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11784078B2 (ja) |
JP (1) | JP7221737B2 (ja) |
KR (1) | KR20200106456A (ja) |
CN (1) | CN111653514B (ja) |
TW (1) | TWI839477B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023166866A1 (ja) * | 2022-03-01 | 2023-09-07 | 日本碍子株式会社 | ウエハ載置台 |
JP7364822B1 (ja) | 2022-09-27 | 2023-10-18 | 日本碍子株式会社 | ウエハ載置台 |
JP7429208B2 (ja) | 2021-08-17 | 2024-02-07 | 日本碍子株式会社 | ウエハ載置台 |
JP7514811B2 (ja) | 2021-10-14 | 2024-07-11 | 日本碍子株式会社 | ウエハ載置台 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7175114B2 (ja) * | 2018-07-19 | 2022-11-18 | 東京エレクトロン株式会社 | 載置台及び電極部材 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217178A (ja) * | 2001-01-23 | 2002-08-02 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2013026387A (ja) * | 2011-07-20 | 2013-02-04 | Tokyo Electron Ltd | 載置台温度制御装置及び基板処理装置 |
JP2014011382A (ja) * | 2012-07-02 | 2014-01-20 | Tokyo Electron Ltd | プラズマ処理装置、及び温度制御方法 |
JP2018125463A (ja) * | 2017-02-02 | 2018-08-09 | 東京エレクトロン株式会社 | 被加工物の処理装置 |
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JPH1126564A (ja) * | 1997-07-08 | 1999-01-29 | Sumitomo Metal Ind Ltd | 静電チャック |
JP3921234B2 (ja) * | 2002-02-28 | 2007-05-30 | キヤノンアネルバ株式会社 | 表面処理装置及びその製造方法 |
TWI267940B (en) * | 2004-06-28 | 2006-12-01 | Kyocera Corp | Electrostatic chuck |
JP4333587B2 (ja) * | 2005-01-14 | 2009-09-16 | 三菱電機株式会社 | ヒートシンクおよび冷却ユニット |
JP4935143B2 (ja) * | 2006-03-29 | 2012-05-23 | 東京エレクトロン株式会社 | 載置台及び真空処理装置 |
JP2007317772A (ja) | 2006-05-24 | 2007-12-06 | Shinko Electric Ind Co Ltd | 静電チャック装置 |
JP6176771B2 (ja) | 2010-12-28 | 2017-08-09 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP5935202B2 (ja) | 2011-05-27 | 2016-06-15 | 国立大学法人東北大学 | 静電チャック装置及びその製造方法 |
KR101800337B1 (ko) * | 2011-09-28 | 2017-11-22 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
JP6055232B2 (ja) * | 2012-08-10 | 2016-12-27 | 株式会社Uacj | 冷却プレートおよび冷却装置 |
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JP6239894B2 (ja) | 2013-08-07 | 2017-11-29 | 日本特殊陶業株式会社 | 静電チャック |
JP6196095B2 (ja) * | 2013-08-07 | 2017-09-13 | 日本特殊陶業株式会社 | 静電チャック |
JP5987966B2 (ja) * | 2014-12-10 | 2016-09-07 | Toto株式会社 | 静電チャックおよびウェーハ処理装置 |
US9870934B2 (en) | 2015-07-28 | 2018-01-16 | Micron Technology, Inc. | Electrostatic chuck and temperature-control method for the same |
WO2017115758A1 (ja) * | 2015-12-28 | 2017-07-06 | 日本碍子株式会社 | 円板状ヒータ及びヒータ冷却板アセンブリ |
CN110352626B (zh) * | 2017-03-02 | 2022-04-15 | 日本碍子株式会社 | 晶圆加热装置 |
CN207056599U (zh) * | 2017-07-21 | 2018-03-02 | 天津百伦斯生物技术有限公司 | 分体式可调换的加热与冷却装置 |
JP6392961B2 (ja) | 2017-09-13 | 2018-09-19 | 日本特殊陶業株式会社 | 静電チャック |
KR102646904B1 (ko) * | 2018-12-04 | 2024-03-12 | 삼성전자주식회사 | 플라즈마 처리 장치 |
-
2019
- 2019-03-04 JP JP2019038891A patent/JP7221737B2/ja active Active
-
2020
- 2020-02-27 US US16/803,143 patent/US11784078B2/en active Active
- 2020-03-02 KR KR1020200025941A patent/KR20200106456A/ko not_active Application Discontinuation
- 2020-03-03 TW TW109106876A patent/TWI839477B/zh active
- 2020-03-04 CN CN202010143272.2A patent/CN111653514B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217178A (ja) * | 2001-01-23 | 2002-08-02 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2013026387A (ja) * | 2011-07-20 | 2013-02-04 | Tokyo Electron Ltd | 載置台温度制御装置及び基板処理装置 |
JP2014011382A (ja) * | 2012-07-02 | 2014-01-20 | Tokyo Electron Ltd | プラズマ処理装置、及び温度制御方法 |
JP2018125463A (ja) * | 2017-02-02 | 2018-08-09 | 東京エレクトロン株式会社 | 被加工物の処理装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7429208B2 (ja) | 2021-08-17 | 2024-02-07 | 日本碍子株式会社 | ウエハ載置台 |
JP7514811B2 (ja) | 2021-10-14 | 2024-07-11 | 日本碍子株式会社 | ウエハ載置台 |
WO2023166866A1 (ja) * | 2022-03-01 | 2023-09-07 | 日本碍子株式会社 | ウエハ載置台 |
JP7364822B1 (ja) | 2022-09-27 | 2023-10-18 | 日本碍子株式会社 | ウエハ載置台 |
WO2024069742A1 (ja) * | 2022-09-27 | 2024-04-04 | 日本碍子株式会社 | ウエハ載置台 |
Also Published As
Publication number | Publication date |
---|---|
TWI839477B (zh) | 2024-04-21 |
KR20200106456A (ko) | 2020-09-14 |
CN111653514A (zh) | 2020-09-11 |
US20200286755A1 (en) | 2020-09-10 |
TW202040728A (zh) | 2020-11-01 |
US11784078B2 (en) | 2023-10-10 |
CN111653514B (zh) | 2023-10-31 |
JP7221737B2 (ja) | 2023-02-14 |
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